公开(公告)号：US20140205947A1

公开(公告)日：2014-07-24

申请号：US14226938

申请日：2014-03-27

Applicant: FUJIFILM Corporation

Inventor： Kaoru IWATO ,  Keita KATO

IPC: G03F7/038

CPC classification number: G03F7/0382 ,  G03F7/0048 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40

Abstract: A pattern forming method includes: (i) forming a film from a chemical amplification resist composition that contains (A) a resin, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a tertiary alcohol; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.

Abstract translation: 图案形成方法包括：（i）从化学放大抗蚀剂组合物形成膜，其包含（A）树脂，（B）在通过光化射线或辐射照射时能够产生酸的化合物和（C） 醇; （ii）曝光胶片; 和（iii）通过使用含有有机溶剂的显影剂进行显影。

公开(公告)号：US20240170272A1

公开(公告)日：2024-05-23

申请号：US18426363

申请日：2024-01-30

Applicant: FUJIFILM Corporation ,  The University of Tokyo

Inventor： Yasuhiko HIRANA ,  Takuro SUGIYAMA ,  Yuko TERAO ,  Kaoru IWATO ,  Takafumi HIRATA

IPC: H01J49/10 ,  H01J49/00 ,  H01J49/40

CPC classification number: H01J49/105 ,  H01J49/0009 ,  H01J49/40

Abstract: Provided are a standard sample film or a standard sample for use in laser ablation inductively coupled plasma mass spectrometry, the standard sample film or the standard sample containing an organic substance and having a small variation in signal intensity of an ion of a metal element depending on a measurement position; a method for producing a standard sample film; a sample set; a quantitative analysis method; and a transfer film. The standard sample film of the present invention is a standard sample film for use in laser ablation inductively coupled plasma mass spectrometry, the standard sample film containing a polymer, a metal element, and an internal standard, and having a maximum height difference in film thickness of the standard sample film of 0.50 μm or less.

公开(公告)号：US20150338743A1

公开(公告)日：2015-11-26

申请号：US14814844

申请日：2015-07-31

Applicant: FUJIFILM CORPORATION

Inventor： Kaoru IWATO

IPC: G03F7/32 ,  G03F7/20 ,  G03F7/40 ,  G03F7/16

CPC classification number: G03F7/325 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2004 ,  G03F7/2041 ,  G03F7/40

Abstract: There is provided a pattern forming method comprising a step of forming a resist film from an actinic ray-sensitive or radiation-sensitive resin composition containing a resin capable of increasing the polarity by an action of an acid to decrease the solubility in an organic solvent-containing developer and a compound capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid, a step of forming, on the resist film, a protective film from a protective film composition, a step of exposing the resist film having a protective film to an electron beam or an extreme-ultraviolet ray, and a step of developing the resist film by using the organic solvent-containing developer.

Abstract translation: 提供了一种图案形成方法，其包括由含有能够通过酸的作用增加极性的树脂的光化射线敏感或辐射敏感性树脂组合物形成抗蚀剂膜的步骤，以降低在有机溶剂 - 含有荧光体的显影剂和能够在光化学射线或辐射照射下分解以产生酸的化合物，在保护膜组合物上在抗蚀剂膜上形成保护膜的步骤，使具有保护膜的抗蚀剂膜曝光的步骤 膜到电子束或极紫外线，以及通过使用含有机溶剂的显影剂显影抗蚀剂膜的步骤。

公开(公告)号：US20150248056A1

公开(公告)日：2015-09-03

申请号：US14713215

申请日：2015-05-15

Applicant: FUJIFILM Corporation

Inventor： Michihiro SHIRAKAWA ,  Keita KATO ,  Tadahiro ODANI ,  Atsushi NAKAMURA ,  Hidenori TAKAHASHI ,  Kaoru IWATO

IPC: G03F7/095 ,  G03F7/075 ,  G03F7/038

CPC classification number: G03F7/095 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/325 ,  H01L21/0271

Abstract: A pattern forming method contains: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract translation: 图案形成方法包括：（i）通过使用第一树脂组合物（I）在基材上形成第一膜的步骤，（ii）通过使用第二树脂组合物在第一膜上形成第二膜的步骤 II），（iii）暴露具有第一膜和第二膜的多层膜的步骤，和（iv）在暴露的第一膜和第二膜中显影第一膜和第二膜的步骤 通过使用含有机溶剂的显影剂形成负图案的多层膜。

公开(公告)号：US20150118623A1

公开(公告)日：2015-04-30

申请号：US14586129

申请日：2014-12-30

Applicant: FUJIFILM Corporation

Inventor： Takuya TSURUTA ,  Tomotaka TSUCHIMURA ,  Kaoru IWATO

IPC: C08F12/24 ,  G03F7/20 ,  G03F7/004

CPC classification number: C08F12/24 ,  C08F8/02 ,  C08F12/32 ,  C08F212/14 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0388 ,  G03F7/0392 ,  G03F7/20 ,  C08F212/32 ,  C08F212/08 ,  C08F220/32 ,  C08F220/36

Abstract: A resin composition of the present invention includes a polymer compound (A) containing a repeating unit (Q) represented by the following general formula (1): wherein R1 represents a hydrogen atom, a methyl group, or a halogen atom; R2 and R3 represent a hydrogen atom, an alkyl group, or a cycloalkyl group; L represents a divalent linking group or a single bond; Y represents a substituent excluding a methylol group; Z represents a hydrogen atom or a substituent; m represents an integer of 0 to 4; n represents an integer of 1 to 5; and m+n is 5 or less.

Abstract translation: 本发明的树脂组合物含有含有下述通式（1）表示的重复单元（Q）的高分子化合物（A）：其中，R1表示氢原子，甲基或卤原子; R2和R3表示氢原子，烷基或环烷基; L表示二价连接基团或单键; Y表示除羟甲基之外的取代基; Z表示氢原子或取代基; m表示0〜4的整数， n表示1〜5的整数， m + n为5以下。

公开(公告)号：US20140127629A1

公开(公告)日：2014-05-08

申请号：US14153613

申请日：2014-01-13

Applicant: FUJIFILM Corporation

Inventor： Keita KATO ,  Sou KAMIMURA ,  Yuichiro ENOMOTO ,  Kaoru IWATO ,  Shohei KATAOKA ,  Shoichi SAITOH

IPC: G03F7/32 ,  G03F7/20

CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/20 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/38 ,  G03F7/40

Abstract: Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.

Abstract translation: 提供一种形成图案的方法，包括（a）将化学放大的抗蚀剂组合物形成在膜中，（b）将膜曝光，和（c）用含有第一有机溶剂的显影剂显影曝光的膜，其中在 显影剂，每个具有0.3μm或更大直径的颗粒的密度为30个/ ml或更小。

公开(公告)号：US20130202999A1

公开(公告)日：2013-08-08

申请号：US13837515

申请日：2013-03-15

Applicant: FUJIFILM Corporation

Inventor： Kaoru IWATO

IPC: G03F7/20 ,  G03F7/004

CPC classification number: G03F7/20 ,  C07C2604/00 ,  C07D209/70 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/32 ,  G03F7/325 ,  H01L21/027 ,  H01L21/0274 ,  H01L21/0275 ,  Y10S430/114 ,  Y10S430/115 ,  Y10S430/128

Abstract: Provided is a negative type pattern forming method that satisfies high sensitivity, high resolution, good roughness and good dry etching resistance at the same time, and further, has a good development time dependency, the method including (i) forming a film by a chemical amplification resist composition containing (A) a fullerene derivative having an acid-decomposable group, (B) a compound generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, (ii) exposing the film, and (iii) developing the exposed film by using an organic solvent-containing developer.

Abstract translation: 提供了一种同时满足高灵敏度，高分辨率，良好的粗糙度和良好的耐干蚀刻性的负型图案形成方法，并且还具有良好的显影时间依赖性，该方法包括（i）通过化学品形成膜 含有（A）具有酸可分解基团的富勒烯衍生物的放射抗蚀剂组合物，（B）在用光化射线或辐射照射时产生酸的化合物，和（C）溶剂，（ii）使膜曝光和（ iii）通过使用含有机溶剂的显影剂显影曝光的膜。