公开(公告)号：US20200183274A1

公开(公告)日：2020-06-11

申请号：US16783350

申请日：2020-02-06

Applicant: FUJIFILM Corporation

Inventor： Naohiro TANGO ,  Akiyoshi GOTO ,  Keiyu O ,  Kazuhiro Marumo ,  Ryo NISHIO ,  Akira TAKADA

IPC: G03F7/004 ,  G03F7/039 ,  C08L25/08 ,  G03F7/20 ,  G03F7/32

Abstract: A photosensitive resin composition includes a resin, a photoacid generator, a solvent, and a low-molecular-weight ester compound, in which low-molecular-weight ester compound has alkali degradability and has a molecular weight of less than 1,500, and a content of the low-molecular-weight ester compound is from 0.1% by mass to 6% by mass with respect to the total solid content of the composition.

公开(公告)号：US20180011406A1

公开(公告)日：2018-01-11

申请号：US15708963

申请日：2017-09-19

Applicant: FUJIFILM Corporation

Inventor： Naoya HATAKEYAMA ,  Naoki INOUE ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/11 ,  C08F220/18 ,  G03F7/20 ,  G03F7/16 ,  C08F220/28 ,  G03F7/004 ,  C09D133/14 ,  C09D133/10 ,  C09D133/06 ,  G03F7/32 ,  G03F7/038

CPC classification number: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/185 ,  C08F2220/1858 ,  C08F2220/1891 ,  C08F2220/283 ,  C09D133/066 ,  C09D133/10 ,  C09D133/14 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/027

Abstract: A pattern forming method includes: applying an actinic ray-sensitive or radiation- sensitive resin composition onto a substrate to form a resist film; forming an upper layer film on the resist film, using a composition for forming an upper layer film; exposing the resist film having the upper layer film formed thereon; and developing the exposed resist film using a developer including an organic solvent to form a pattern. The composition for forming an upper layer film contains a resin having a repeating unit (a) with a ClogP value of 2.85 or more and a compound (b) with a ClogP of 1.30 or less, and the receding contact angle of the upper layer film with water is 70 degrees or more, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method.

公开(公告)号：US20170371244A1

公开(公告)日：2017-12-28

申请号：US15700518

申请日：2017-09-11

Applicant: FUJIFILM Corporation

Inventor： Naoya HATAKEYAMA ,  Naoki INOUE ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/11 ,  C08L101/00 ,  C08L33/16 ,  C08L33/10 ,  C08K5/32 ,  G03F7/32 ,  C08F20/36

Abstract: A composition for forming an upper layer film is applied onto a resist film formed using an actinic ray-sensitive or radiation-sensitive resin composition, and includes a resin X and a compound A having a radical trapping group. A pattern forming method includes applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, applying the composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, exposing the resist film having the upper layer film formed thereon, and developing the exposed resist film using a developer including an organic solvent to form a pattern.

公开(公告)号：US20170199460A1

公开(公告)日：2017-07-13

申请号：US15470042

申请日：2017-03-27

Applicant: FUJIFILM Corporation

Inventor： Naohiro TANGO ,  Kei YAMAMOTO ,  Naoki INOUE ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/11 ,  C08F220/28 ,  G03F7/004 ,  G03F7/09 ,  G03F7/16 ,  G03F7/039 ,  G03F7/38 ,  G03F7/32 ,  G03F7/40 ,  H01L21/027 ,  G03F7/038 ,  C08F220/18 ,  G03F7/20

CPC classification number: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/283 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/327 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0276 ,  C08F2220/185 ,  C08F2220/1891 ,  C08F2220/1841 ,  C08F220/42 ,  C08F220/20

Abstract: The present invention has an object to provide a pattern forming method capable of providing good DOF, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a compound having a molecular weight of 870 or less, which generates an acid upon irradiation with active light or radiation.

公开(公告)号：US20170184974A1

公开(公告)日：2017-06-29

申请号：US15460380

申请日：2017-03-16

Applicant: FUJIFILM Corporation

Inventor： Naoki INOUE ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO ,  Akiyoshi GOTO

IPC: G03F7/32 ,  C08F220/18 ,  C08F220/28 ,  G03F7/40 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/004 ,  G03F7/09

CPC classification number: G03F7/327 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/283 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/11 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

Abstract: Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100° C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.

公开(公告)号：US20160342083A1

公开(公告)日：2016-11-24

申请号：US15229247

申请日：2016-08-05

Applicant: FUJIFILM Corporation

Inventor： Ryosuke UEBA ,  Naoya IGUCHI ,  Tsukasa YAMANAKA ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Keita KATO

IPC: G03F7/00 ,  H01L21/027 ,  G03F7/40 ,  H01L21/311 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0035 ,  G03F7/0397 ,  G03F7/2053 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/31144

Abstract: A pattern formation method includes step (i) of forming a first negative type pattern on a substrate by performing step (i-1) of forming a first film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition, step (i-2) of exposing the first film and step (i-3) of developing the exposed first film in this order; step (iii) of forming a second film at least on the first negative type pattern using an actinic ray-sensitive or radiation-sensitive resin composition (2); step (v) of exposing the second film; and step (vi) of developing the exposed second film and forming a second negative type pattern at least on the first negative type pattern.

Abstract translation: 图案形成方法包括通过使用光化射线敏感性或辐射敏感性树脂组合物在基板上形成第一膜的步骤（i-1）来在基板上形成第一负型图案的步骤（i），步骤 i-2），使第一膜和第（i-3）步曝光; 使用光化射线敏感或辐射敏感性树脂组合物（2）至少在第一负型图案上形成第二膜的步骤（iii）。 步骤（v）使第二膜曝光; 以及步骤（vi），使至少在第一负型图案上显影出曝光的第二膜并形成第二负型图案。

公开(公告)号：US20140234759A1

公开(公告)日：2014-08-21

申请号：US14229240

申请日：2014-03-28

Applicant: FUJIFILM Corporation

Inventor： Shohei KATAOKA ,  Akinori SHIBUYA ,  Junichi ITO ,  Tomoki MATSUDA ,  Toshiaki FUKUHARA ,  Naohiro TANGO ,  Kaoru IWATO ,  Masahiro YOSHIDOME ,  Shinichi SUGIYAMA ,  Yoko TOKUGAWA

IPC: G03F7/038

CPC classification number: G03F7/038 ,  C08F220/28 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

Abstract: According to one embodiment, there is provided an actinic ray- or radiation-sensitive resin composition containing (A) a resin containing a repeating unit represented by general formula (1) below and a repeating unit that is decomposed by an action of an acid to generate an alkali-soluble group, and (B) a compound that generates the acid when exposed to actinic rays or radiation, where L represents a bivalent connecting group, R1 represents a hydrogen atom or an alkyl group, and Z represents a cyclic acid anhydride structure.

Abstract translation: 根据一个实施方案，提供了一种光化射线或辐射敏感性树脂组合物，其含有（A）含有下述通式（1）表示的重复单元的树脂和通过酸作用分解的重复单元 产生碱溶性基团，（B）当暴露于光化学射线或辐射时产生酸的化合物，其中L表示二价连接基团，R 1表示氢原子或烷基，Z表示环状酸酐 结构体。