公开(公告)号：US09406829B2

公开(公告)日：2016-08-02

申请号：US14317479

申请日：2014-06-27

Applicant: First Solar, Inc.

Inventor： Pratima Addepalli ,  Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  David Hwang ,  Andrei Los ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  San Yu ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract translation: 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。

公开(公告)号：US09245808B2

公开(公告)日：2016-01-26

申请号：US14133946

申请日：2013-12-19

Applicant: FIRST SOLAR, INC

Inventor： Benyamin Buller ,  Douglas Dauson ,  David Hwang ,  Scott Mills ,  Dale Roberts ,  Rui Shao ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L21/66 ,  G01B11/06 ,  H01L31/0224 ,  H01L31/18 ,  G01R31/40

CPC classification number: H01L22/12 ,  G01B11/0625 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/1884 ,  H02S50/00 ,  Y02E10/50

Abstract: A method and system for real-time, in-line calculations of opto-electronic properties and thickness of the layers of multi-layered transparent conductive oxide stacks of photovoltaic devices is provided. The method and system include taking measurements of each layer of the stack during deposition thereof. The measurements are then used to calculate the opto-electronic properties and thicknesses of the layers in real-time.

Abstract translation: 提供了一种用于光电装置的多层透明导电氧化物层的光电性质和层的厚度实时的在线计算的方法和系统。 该方法和系统包括在沉积期间对堆叠的每个层进行测量。 然后测量用于实时地计算层的光电特性和厚度。

公开(公告)号：US09236523B2

公开(公告)日：2016-01-12

申请号：US13785495

申请日：2013-03-05

Applicant: FIRST SOLAR, INC

Inventor： Benyamin Buller ,  Markus Gloeckler ,  David Hwang ,  Rui Shao ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/18 ,  C23C14/08 ,  C23C14/58 ,  H01L31/073 ,  H01L31/0224 ,  H01L31/0392

CPC classification number: H01L21/67109 ,  C23C14/086 ,  C23C14/5806 ,  H01L21/677 ,  H01L31/022466 ,  H01L31/0324 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method and apparatus for forming a crystalline cadmium stannate layer of a photovoltaic device by heating an amorphous layer in the presence of hydrogen gas.

Abstract translation: 一种用于通过在氢气存在下加热非晶层来形成光伏器件的结晶镉锡酸盐层的方法和装置。

公开(公告)号：US20150325735A1

公开(公告)日：2015-11-12

申请号：US14740501

申请日：2015-06-16

Applicant: First Solar, Inc.

Inventor： Rui Shao ,  Markus Gloeckler

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022466 ,  H01L31/022483 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1-xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1-xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1-xMgxO window layer.

Abstract translation: 描述了用于光伏器件和衬底结构的方法和器件。 在一个实施例中，光伏器件包括衬底结构和CdTe吸收剂层，衬底结构包括Zn1-xMgxO窗口层和低电导率缓冲层。 另一实施例涉及一种用于制造光伏器件的方法，包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气传输沉积工艺中的至少一种在衬底上形成Zn1-xMgxO窗口层。 该方法包括在Zn1-xMgxO窗口层上方形成CdTe吸收剂层。

公开(公告)号：US20130233380A1

公开(公告)日：2013-09-12

申请号：US13790645

申请日：2013-03-08

Applicant: FIRST SOLAR, INC

Inventor： Zhibo Zhao ,  Chungho Lee ,  Benyamin Buller ,  Rui Shao ,  Gang Xiong

IPC: H01L31/0216

CPC classification number: H01L31/02167 ,  H01L31/022466 ,  H01L31/0445 ,  H01L31/073 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543

Abstract: A photovoltaic module including a dielectric tunneling layer and methods of forming a photovoltaic module with a dielectric tunneling layer.

Abstract translation: 包括电介质隧道层的光伏模块和形成具有介电隧道层的光伏模块的方法。