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21.发明授权公开(公告)号：US07452713B2
公开(公告)日：2008-11-18
申请号：US11191325
申请日：2005-07-28
Applicant: Gabriele Barlocchi , Pietro Corona , Ubaldo Mastromatteo , Flavio Villa
Inventor： Gabriele Barlocchi , Pietro Corona , Ubaldo Mastromatteo , Flavio Villa
CPC classification number: B01L7/52 , B01L3/5025 , B01L3/502707 , B01L2200/12 , B01L2300/1827
Abstract: A process for manufacturing a microfluidic device, including the steps of: forming at least one channel in a semiconductor material body; forming a dielectric diaphragm above the channel, for closing the channel; and forming heating elements for providing thermal energy inside the channel. The heating elements are formed directly on said dielectric diaphragm.
Abstract translation: 一种用于制造微流体装置的方法，包括以下步骤：在半导体材料体中形成至少一个通道; 在通道上形成介质隔膜，用于封闭通道; 并且形成用于在通道内提供热能的加热元件。 加热元件直接形成在所述介质隔膜上。
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22.发明申请Method for forming buried cavities within a semiconductor body, and semiconductor body thus made 有权在半导体本体内形成掩埋空穴的方法以及由此制成的半导体本体公开(公告)号：US20070057355A1
公开(公告)日：2007-03-15
申请号：US11486387
申请日：2006-07-12
Applicant: Gabriele Barlocchi , Pietro Corona , Dino Faralli , Flavio Villa
Inventor： Gabriele Barlocchi , Pietro Corona , Dino Faralli , Flavio Villa
IPC: H01L21/324 , H01L23/16
CPC classification number: B81C1/00047 , B01L3/502707 , B01L7/52 , B01L2200/12 , B01L2300/0636 , B01L2300/0645 , B01L2300/0816 , B01L2300/1827 , B81B2201/0264 , B81B2203/0315
Abstract: A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches.
Abstract translation: 一种用于在半导体主体内形成掩埋空腔的方法，设想了以下步骤：提供具有由半导体材料制成的体区的晶片; 在本体区域中挖掘在它们的半导体材料壁之间划定的沟槽; 形成用于在脱氧气氛存在下关闭所述沟槽的闭合层，以便使所述沟槽内的脱氧气氛充满; 进行热处理，使壁的半导体材料迁移并形成掩埋腔。 此外，在进行热处理之前，在沟槽顶部的闭合层上形成基本上不透氢的阻挡层。
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23.发明申请公开(公告)号：US20050282221A1
公开(公告)日：2005-12-22
申请号：US11191325
申请日：2005-07-28
Applicant: Gabriele Barlocchi , Pietro Corona , Ubaldo Mastromatteo , Flavio Villa
Inventor： Gabriele Barlocchi , Pietro Corona , Ubaldo Mastromatteo , Flavio Villa
CPC classification number: B01L7/52 , B01L3/5025 , B01L3/502707 , B01L2200/12 , B01L2300/1827
Abstract: A process for manufacturing a microfluidic device, including the steps of: forming at least one channel in a semiconductor material body; forming a dielectric diaphragm above the channel, for closing the channel; and forming heating elements for providing thermal energy inside the channel. The heating elements are formed directly on said dielectric diaphragm.
Abstract translation: 一种用于制造微流体装置的方法，包括以下步骤：在半导体材料体中形成至少一个通道; 在通道上形成介质隔膜，用于封闭通道; 以及形成用于在通道内提供热能的加热元件。 加热元件直接形成在所述介质隔膜上。
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公开(公告)号：US20050208696A1
公开(公告)日：2005-09-22
申请号：US11082491
申请日：2005-03-16
Applicant: Flavio Villa , Gabriele Barlocchi , Pietro Corona , Benedetto Vigna , Lorenzo Baldo
Inventor： Flavio Villa , Gabriele Barlocchi , Pietro Corona , Benedetto Vigna , Lorenzo Baldo
CPC classification number: G01L9/0073 , G01L9/0045
Abstract: Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.
Abstract translation: 制造半导体压力传感器的方法，其中在硅衬底中，挖沟和界定壁; 闭合层外延生长，封闭顶部的沟槽并形成悬浮膜; 进行热处理以使壁的硅迁移并在悬浮膜下方形成封闭空腔; 并且形成用于将悬浮膜的偏转转换成电信号的结构。
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25.发明申请Integrated chemical microreactor with large area channels and manufacturing process thereof 有权具有大面积通道的集成化学微反应器及其制造工艺公开(公告)号：US20050181392A1
公开(公告)日：2005-08-18
申请号：US10996593
申请日：2004-11-24
Applicant: Gabriele Barlocchi , Ubaldo Mastromatteo , Flavio Villa
Inventor： Gabriele Barlocchi , Ubaldo Mastromatteo , Flavio Villa
CPC classification number: B81C1/00539 , B81B1/002 , B81B2201/0214 , B81B2201/051 , B81C1/00404
Abstract: The microreactor has a body of semiconductor material; a large area buried channel extending in the body and having walls; a coating layer of insulating material coating the walls of the channel; a diaphragm extending on top of the body and upwardly closing the channel. The diaphragm is formed by a semiconductor layer completely encircling mask portions of insulating material.
Abstract translation: 微反应器具有半导体材料体; 一个大面积的埋藏通道延伸到身体并具有墙壁; 覆盖通道壁的绝缘材料的涂层; 一个在主体顶部延伸并向上关闭通道的隔膜。 隔膜由完全环绕绝缘材料的掩模部分的半导体层形成。
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Patent Agency Ranking
26.发明授权Integrated device based upon semiconductor technology, in particular chemical microreactor 有权基于半导体技术的集成器件，特别是化学微反应器公开(公告)号：US06909073B2
公开(公告)日：2005-06-21
申请号：US10795589
申请日：2004-03-08
Applicant: Flavio Villa , Gabriele Barlocchi , Manlio Gennaro Torchia , Ubaldo Mastromatteo
Inventor： Flavio Villa , Gabriele Barlocchi , Manlio Gennaro Torchia , Ubaldo Mastromatteo
CPC classification number: B01L7/525 , B01J19/0093 , B01J2219/00783 , B01J2219/00822 , B01J2219/00828 , B01J2219/0086 , B01J2219/00873 , B01J2219/00961 , B01J2219/00986 , B01L3/5027 , B01L3/502707 , B01L2300/1827 , B01L2300/185 , B01L2300/1883 , B01L2300/1894
Abstract: An integrated device based upon semiconductor technology, in particular a chemical microreactor, including a semiconductor body having a high-temperature operating portion and a low temperature operating portion. The semiconductor body is provided with a thermal-insulation device including a dissipator element arranged between the high-temperature operating portion and the low-temperature operating portion. The dissipator includes a membrane connecting the high-temperature operating portion and the low-temperature operating portion, and a plurality of diaphragms that extend substantially orthogonal to the membrane and are parallel to one another.
Abstract translation: 基于半导体技术的集成器件，特别是化学微反应器，包括具有高温操作部分和低温操作部分的半导体本体。 半导体本体设置有绝热装置，其包括设置在高温操作部和低温操作部之间的耗散元件。 散热器包括连接高温操作部分和低温操作部分的膜，以及基本上垂直于膜并且彼此平行延伸的多个膜片。
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公开(公告)号：US06770471B2
公开(公告)日：2004-08-03
申请号：US09965128
申请日：2001-09-26
Applicant: Gabriele Barlocchi , Flavio Villa
Inventor： Gabriele Barlocchi , Flavio Villa
IPC: C12M134
CPC classification number: B01L7/52 , B01L3/502707 , B01L2200/12 , B01L2300/0645 , B01L2300/0825 , B01L2300/1827 , B01L2300/1883
Abstract: Integrated microreactor, formed in a monolithic body and including a semiconductor material region and an insulating layer; a buried channel extending in the semiconductor material region; a first and a second access trench extending in the semiconductor material region and in the insulating layer, and in communication with the buried channel; a first and a second reservoir formed on top of the insulating layer and in communication with the first and the second access trench; a suspended diaphragm formed by the insulating layer, laterally to the buried channel; and a detection electrode, supported by the suspended diaphragm, above the insulating layer, and inside the second reservoir.
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28.发明授权Integrated device based upon semiconductor technology, in particular chemical microreactor 有权基于半导体技术的集成器件，特别是化学微反应器公开(公告)号：US06727479B2
公开(公告)日：2004-04-27
申请号：US10128989
申请日：2002-04-22
Applicant: Flavio Villa , Gabriele Barlocchi , Manlio Gennaro Torchia , Ubaldo Mastromatteo
Inventor： Flavio Villa , Gabriele Barlocchi , Manlio Gennaro Torchia , Ubaldo Mastromatteo
IPC: H05B302
CPC classification number: B01L7/525 , B01J19/0093 , B01J2219/00783 , B01J2219/00822 , B01J2219/00828 , B01J2219/0086 , B01J2219/00873 , B01J2219/00961 , B01J2219/00986 , B01L3/5027 , B01L3/502707 , B01L2300/1827 , B01L2300/185 , B01L2300/1883 , B01L2300/1894
Abstract: An integrated device based upon semiconductor technology, in particular a chemical microreactor, including a semiconductor body having a high-temperature operating portion and a low-temperature operating portion. The semiconductor body is provided with a thermal-insulation device including a dissipator element arranged between the high-temperature operating portion and the low-temperature operating portion. The dissipator includes a membrane connecting the high-temperature operating portion and the low-temperature operating portion, and a plurality of diaphragms that extend substantially orthogonal to the membrane and are parallel to one another.
Abstract translation: 基于半导体技术的集成器件，特别是化学微反应器，包括具有高温操作部分和低温操作部分的半导体本体。 半导体本体设置有绝热装置，其包括设置在高温操作部和低温操作部之间的耗散元件。 散热器包括连接高温操作部分和低温操作部分的膜，以及基本上垂直于膜并且彼此平行延伸的多个膜片。
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29.发明授权公开(公告)号：US06693039B2
公开(公告)日：2004-02-17
申请号：US09797206
申请日：2001-02-27
Applicant: Pietro Erratico , Enrico Sacchi , Flavio Villa , Gabriele Barlocchi , Pietro Corona
Inventor： Pietro Erratico , Enrico Sacchi , Flavio Villa , Gabriele Barlocchi , Pietro Corona
IPC: H01L21302
CPC classification number: B81C1/00404
Abstract: The process comprises the steps of forming, on top of a semiconductor material wafer, a holed mask having a lattice structure and comprising a plurality of openings each having a substantially square shape and a side with an inclination of 45° with respect to the flat of the wafer; carrying out an anisotropic etch in TMAH of the wafer, using said holed mask, thus forming a cavity, the cross section of which has the shape of an upside-down isosceles trapezium; and carrying out a chemical vapor deposition using TEOS, thus forming a TEOS layer which completely closes the openings of the holed mask and defines a diaphragm overlying the cavity and on which a suspended integrated structure can subsequently be manufactured.
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30.发明授权Integrated device for microfluid thermoregulation, and manufacturing process thereof 有权用于微流体温度调节的集成装置及其制造方法公开(公告)号：US06673593B2
公开(公告)日：2004-01-06
申请号：US09779980
申请日：2001-02-08
Applicant: Ubaldo Mastromatteo , Flavio Villa , Gabriele Barlocchi
Inventor： Ubaldo Mastromatteo , Flavio Villa , Gabriele Barlocchi
IPC: C12M100
CPC classification number: B65D73/00 , A01G9/026 , B01J19/0093 , B01J2219/00873 , B01J2219/00961 , B01L3/5025 , B01L3/502707 , B01L3/502715 , B01L7/52 , B01L2200/12 , B01L2200/147 , B01L2300/0816 , B01L2300/1827 , B26D1/245 , B29C53/04 , B29C61/02 , B29L2009/00 , B32B3/28 , B32B7/02 , B32B37/144 , B32B38/1866 , B32B2307/736 , B44C3/04 , B44C3/044 , B44C3/087 , B44C5/005 , B44C5/06 , B44F1/14 , F28F2260/02 , Y10T156/1041 , Y10T156/1051 , Y10T156/1052 , Y10T428/2443
Abstract: The integrated device for microfluid thermoregulation comprises a semiconductor material body having a surface; a plurality of buried channels extending in the semiconductor material body at a distance from the surface of the semiconductor material body; inlet and outlet ports extending from the surface of the semiconductor material body as far as the ends of the buried channels and being in fluid connection with the buried channels; and heating elements on the semiconductor material body. Temperature sensors are arranged between the heating elements above the surface of the semiconductor material body.
Abstract translation: 用于微流体温度调节的集成装置包括具有表面的半导体材料体; 多个掩埋沟道，其在半导体材料体的与半导体材料体的表面相距一定距离处延伸; 入口和出口从半导体材料体的表面延伸到埋入通道的端部并与埋入通道流体连接; 以及半导体材料体上的加热元件。 温度传感器布置在半导体材料体表面之上的加热元件之间。
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