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公开(公告)号：US20090139871A1
公开(公告)日：2009-06-04
申请号：US12314143
申请日：2008-12-04
CPC分类号： C25D21/10 , C25D17/001 , C25D17/007 , C25D17/008 , C25D21/12
摘要： A plating apparatus can form a bump having a flat top or can form a metal film having a good in-plane uniformity even when the plating of a plating object (substrate) is carried out under high-current density conditions. The plating apparatus includes a plating tank for holding a plating solution; an anode to be immersed in the plating solution in the plating tank; a holder for holding a plating object and disposing the plating object at a position opposite the anode; a paddle, disposed between the anode and the plating object held by the holder, which reciprocates parallel to the plating object to stir the plating solution; and a control section for controlling a paddle drive section which drives the paddle. The control section controls the paddle drive section so that the paddle moves at a velocity whose average absolute value is 70 cm/sec to 100 cm/sec.
摘要翻译： 电镀装置可以形成具有平坦顶部的凸块，或者即使当在高电流密度条件下进行电镀对象（基板）的镀覆时，也可以形成具有良好的面内均匀性的金属膜。 电镀装置包括用于保持电镀液的电镀槽; 将阳极浸入镀槽中的镀液中; 用于保持电镀对象并将电镀对象放置在与阳极相对的位置处的保持器; 设置在所述阳极和由所述保持器保持的所述电镀对象之间的平行于所述电镀对象平移的电镀液，以搅拌所述电镀液; 以及控制部分，用于控制驱动桨叶的桨驱动部分。 控制部分控制桨驱动部分，使得桨以平均绝对值为70cm / sec至100cm / sec的速度移动。
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公开(公告)号：US06716332B1
公开(公告)日：2004-04-06
申请号：US09582919
申请日：2000-07-07
IPC分类号： C25D2100
CPC分类号： C23C18/1834 , C23C18/1605 , C25D5/003 , C25D17/001 , C25D21/00 , C25D21/04 , H05K3/187 , H05K3/422 , H05K3/423
摘要： The present invention provides a plating method and apparatus, which is capable of introducing plating solution into the fine channels and holes formed in a substrate without needing to add a surface active agent to the plating solution, and capable of forming a high-quality plating film having no defects or omissions. The plating method for performing electrolytic or electroless plating of an object using a plating solution comprises: conducting a plating operation after or while deaerating dissolved gas in the plating solution; and/or conducting a preprocessing operation using a preprocessing solution after or while deaerating dissolved gas in the preprocessing solution and subsequently conducting the plating operation.
摘要翻译： 本发明提供一种电镀方法和装置，其能够将电镀液引入形成于基板中的细孔和孔，而无需向电镀液中添加表面活性剂，能够形成高品质的镀膜 没有缺陷或遗漏。 使用电镀液对物体进行电解或无电镀的电镀方法包括：在溶液中溶解气体脱气后进行电镀操作; 和/或在预处理溶液中的溶解气体脱气之后使用预处理溶液进行预处理操作，然后进行电镀操作。
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公开(公告)号：US07402227B2
公开(公告)日：2008-07-22
申请号：US10968183
申请日：2004-10-20
CPC分类号： C25D17/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/004 , C25D17/06 , C25D21/04 , C25D21/10 , C25D21/12
摘要： An apparatus forms a plated film in fine trenches and plugs for interconnects and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and forms bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed. A plating tank accommodates a plating liquid in which an anode is immersed. A diaphragm is provided in the plating tank and disposed between the anode and the substrate held by the substrate holder. Plating liquid circulating systems circulate the plating liquid to respective regions of the plating tank, separated by the diaphragm. A deaerating unit is disposed in at least one of the plating liquid circulating systems.
摘要翻译： 一种装置在精细的沟槽中形成镀膜，并在诸如半导体晶片的衬底的表面形成的抗蚀剂的开口中形成用于互连的插塞，并且在半导体晶片的表面上形成凸块（突起电极）。 该装置包括能够打开和关闭用于保持基板的基板保持器，使得基板的前表面在其背侧和边缘被气密密封的同时露出。 电镀槽容纳浸渍有阳极的电镀液。 在电镀槽中设置隔膜，并设置在由基板保持件保持的阳极和基板之间。 电镀液循环系统将镀液循环到电镀槽的各个区域，由隔膜隔开。 排气单元设置在至少一个电镀液循环系统中。
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公开(公告)号：US08012332B2
公开(公告)日：2011-09-06
申请号：US12142570
申请日：2008-06-19
IPC分类号： C25D5/34
CPC分类号： C25D17/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/004 , C25D17/06 , C25D21/04 , C25D21/10 , C25D21/12
摘要： An apparatus forms a plated film in fine trenches and plugs for interconnects and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and forms bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed. A plating tank accommodates a plating liquid in which an anode is immersed. A diaphragm is provided in the plating tank and disposed between the anode and the substrate held by the substrate holder. Plating liquid circulating systems circulate the plating liquid to respective regions of the plating tank, separated by the diaphragm. A deaerating unit is disposed in at least one of the plating liquid circulating systems.
摘要翻译： 一种装置在精细的沟槽中形成镀膜，并在诸如半导体晶片的衬底的表面形成的抗蚀剂的开口中形成用于互连的插塞，并且在半导体晶片的表面上形成凸块（突起电极）。 该装置包括能够打开和关闭用于保持基板的基板保持器，使得基板的前表面在其背侧和边缘被气密密封的同时露出。 电镀槽容纳浸渍有阳极的电镀液。 在电镀槽中设置隔膜，并设置在由基板保持件保持的阳极和基板之间。 电镀液循环系统将镀液循环到电镀槽的各个区域，由隔膜隔开。 排气单元设置在至少一个电镀液循环系统中。
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公开(公告)号：US20050082163A1
公开(公告)日：2005-04-21
申请号：US10968183
申请日：2004-10-20
CPC分类号： C25D17/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/004 , C25D17/06 , C25D21/04 , C25D21/10 , C25D21/12
摘要： An apparatus forms a plated film in fine trenches and plugs for interconnects and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and forms bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed. A plating tank accommodates a plating liquid in which an anode is immersed. A diaphragm is provided in the plating tank and disposed between the anode and the substrate held by the substrate holder. Plating liquid circulating systems circulate the plating liquid to respective regions of the plating tank, separated by the diaphragm. A deaerating unit is disposed in at least one of the plating liquid circulating systems.
摘要翻译： 一种装置在精细的沟槽中形成镀膜，并在诸如半导体晶片的衬底的表面形成的抗蚀剂的开口中形成用于互连的插塞，并且在半导体晶片的表面上形成凸块（突起电极）。 该装置包括能够打开和关闭用于保持基板的基板保持器，使得基板的前表面在其背侧和边缘被气密密封的同时露出。 电镀槽容纳浸渍有阳极的电镀液。 在电镀槽中设置隔膜，并设置在由基板保持件保持的阳极和基板之间。 电镀液循环系统将镀液循环到电镀槽的各个区域，由隔膜隔开。 排气单元设置在至少一个电镀液循环系统中。
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公开(公告)号：US20080245669A1
公开(公告)日：2008-10-09
申请号：US12142570
申请日：2008-06-19
IPC分类号： C25D5/00
CPC分类号： C25D17/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/004 , C25D17/06 , C25D21/04 , C25D21/10 , C25D21/12
摘要： An apparatus forms a plated film in fine trenches and plugs for interconnects and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and forms bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed. A plating tank accommodates a plating liquid in which an anode is immersed. A diaphragm is provided in the plating tank and disposed between the anode and the substrate held by the substrate holder. Plating liquid circulating systems circulate the plating liquid to respective regions of the plating tank, separated by the diaphragm. A deaerating unit is disposed in at least one of the plating liquid circulating systems.
摘要翻译： 一种装置在精细的沟槽中形成镀膜，并在诸如半导体晶片的衬底的表面形成的抗蚀剂的开口中形成用于互连的插塞，并且在半导体晶片的表面上形成凸块（突起电极）。 该装置包括能够打开和关闭用于保持基板的基板保持器，使得基板的前表面在其背侧和边缘被气密密封的同时露出。 电镀槽容纳浸渍有阳极的电镀液。 在电镀槽中设置隔膜，并设置在由基板保持件保持的阳极和基板之间。 电镀液循环系统将镀液循环到电镀槽的各个区域，由隔膜隔开。 排气单元设置在至少一个电镀液循环系统中。
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