摘要:
An apparatus forms a plated film in fine trenches and plugs for interconnects and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and forms bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed. A plating tank accommodates a plating liquid in which an anode is immersed. A diaphragm is provided in the plating tank and disposed between the anode and the substrate held by the substrate holder. Plating liquid circulating systems circulate the plating liquid to respective regions of the plating tank, separated by the diaphragm. A deaerating unit is disposed in at least one of the plating liquid circulating systems.
摘要:
An apparatus forms a plated film in fine trenches and plugs for interconnects and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and forms bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed. A plating tank accommodates a plating liquid in which an anode is immersed. A diaphragm is provided in the plating tank and disposed between the anode and the substrate held by the substrate holder. Plating liquid circulating systems circulate the plating liquid to respective regions of the plating tank, separated by the diaphragm. A deaerating unit is disposed in at least one of the plating liquid circulating systems.
摘要:
An apparatus forms a plated film in fine trenches and plugs for interconnects and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and forms bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed. A plating tank accommodates a plating liquid in which an anode is immersed. A diaphragm is provided in the plating tank and disposed between the anode and the substrate held by the substrate holder. Plating liquid circulating systems circulate the plating liquid to respective regions of the plating tank, separated by the diaphragm. A deaerating unit is disposed in at least one of the plating liquid circulating systems.
摘要:
An apparatus forms a plated film in fine trenches and plugs for interconnects and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and forms bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed. A plating tank accommodates a plating liquid in which an anode is immersed. A diaphragm is provided in the plating tank and disposed between the anode and the substrate held by the substrate holder. Plating liquid circulating systems circulate the plating liquid to respective regions of the plating tank, separated by the diaphragm. A deaerating unit is disposed in at least one of the plating liquid circulating systems.
摘要:
The present invention provides a plating method and apparatus, which is capable of introducing plating solution into the fine channels and holes formed in a substrate without needing to add a surface active agent to the plating solution, and capable of forming a high-quality plating film having no defects or omissions. The plating method for performing electrolytic or electroless plating of an object using a plating solution comprises: conducting a plating operation after or while deaerating dissolved gas in the plating solution; and/or conducting a preprocessing operation using a preprocessing solution after or while deaerating dissolved gas in the preprocessing solution and subsequently conducting the plating operation.
摘要:
The present invention provides a plating method and apparatus, which is capable of introducing plating solution into the fine channels and holes formed in a substrate without needing to add a surface active agent to the plating solution, and capable of forming a high-quality plating film having no defects or omissions. The plating method for performing electrolytic or electroless plating of an object using a plating solution comprises: conducting a plating operation after or while deaerating dissolved gas in the plating solution; and/or conducting a preprocessing operation using a preprocessing solution after or while deaerating dissolved gas in the preprocessing solution and subsequently conducting the plating operation.
摘要:
A semiconductor wafer holder includes first and second holding members between which a semiconductor wafer is held. The second holding member includes a second conductive element placed in contact with a first conductive element of the first holding member and the semiconductor wafer. A ring clamp is used to press the second holding member against the first holding member for holding of the semiconductor wafer.
摘要:
A semiconductor wafer holder includes first and second holding members between which a semiconductor wafer is held. The second holding member includes a second conductive element placed in contact with a first conductive element of the first holding member and the semiconductor wafer. A ring clamp is used to press the second holding member against the first holding member for holding of the semiconductor wafer.
摘要:
The present semiconductor element comprises a semiconductor substrate, a wiring pad formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag3Sn formed thereon, and a protruded electrode consisting of low-melting metal formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag3Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained.
摘要:
A semiconductor wafer holder includes first and second holding members between which a semiconductor wafer is held. The second holding member includes a second conductive element placed in contact with a first conductive element of the first holding member and the semiconductor wafer. A ring clamp is used to press the second holding member against the first holding member for holding of the semiconductor wafer.