公开(公告)号：US10340183B1

公开(公告)日：2019-07-02

申请号：US15860318

申请日：2018-01-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qiang Fang ,  Shafaat Ahmed ,  Zhiguo Sun ,  Jiehui Shu ,  Dinesh R. Koli ,  Wei-Tsu Tseng

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76844 ,  H01L21/76807 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cobalt plated via integration scheme and methods of manufacture. The structure includes: a via structure composed of cobalt material; and a wiring structure above the via structure. The wiring structure is lined with a barrier liner and the cobalt material and filled with conductive material.

公开(公告)号：US09831123B2

公开(公告)日：2017-11-28

申请号：US15091138

申请日：2016-04-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  Zhiguo Sun ,  Keith Tabakman

IPC: H01L21/76 ,  H01L21/768 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/41725 ,  H01L21/285 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76897 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/66477

Abstract: One method disclosed herein includes performing a plurality of conformal deposition processes to form first, second and third layers of material within a contact opening, wherein the first layer comprises a contact insulating material, the second layer comprises a metal-containing material and the third layer comprises a conductive cap material, wherein the third layer is positioned above the second layer. The method further includes forming a contact ion implant region that is positioned at least partially in at least one of the first, second or third layers of material, forming a conductive material above the third layer and removing portions of the layers of material positioned outside of the contact opening.

公开(公告)号：US09768058B2

公开(公告)日：2017-09-19

申请号：US14822258

申请日：2015-08-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Zhiguo Sun ,  Qiang Fang ,  Christian Witt

IPC: H01L21/311 ,  H01L21/768 ,  H01L21/02 ,  H01L21/764 ,  H01L23/52

CPC classification number: H01L21/764 ,  H01L21/02068 ,  H01L21/02356 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76883 ,  H01L23/5222 ,  H01L23/53295

Abstract: One illustrative method disclosed herein includes, among other things, forming a plurality of trenches in a layer of insulating material, performing at least one damage-causing process operation to selectively damage portions of the insulating material adjacent the trenches, forming a conductive line in each of the trenches, after forming the conductive lines, performing a selective etching process to selectively remove at least portions of the damaged portions of the insulating material and thereby define an air gap positioned laterally adjacent each of the conductive lines, and forming a capping layer of material above the conductive lines, the air gap and the undamaged portion of the layer of insulating material.

公开(公告)号：US09613855B1

公开(公告)日：2017-04-04

申请号：US15091196

申请日：2016-04-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  Zhiguo Sun ,  Keith Tabakman

IPC: H01L21/768 ,  H01L21/00 ,  H01L21/8238

CPC classification number: H01L21/76859 ,  H01L21/285 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/53238 ,  H01L23/53266

Abstract: A method that includes, among other things, forming first and second contact openings in a layer of insulating material that respectively expose a portion of first and second source/drain (S/D) regions of first and second transistors that are of the opposite type, forming first, second and third layers of material within each of the first and second contact openings, and forming an implant masking layer that masks the first contact opening while leaving the second contact opening exposed for further processing. The method also includes forming a contact ion implant region that is positioned at least partially in at least one of the first, second or third layers of material, removing the implant masking layer and forming a conductive material in both the first and second contact openings so as to define first and second MIS contact structures positioned in the first and second contact openings.

公开(公告)号：US20140315385A1

公开(公告)日：2014-10-23

申请号：US13868412

申请日：2013-04-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hung-Wei Liu ,  Tsung-Liang Chen ,  Huang Liu ,  Zhiguo Sun

IPC: H01L21/02

CPC classification number: H01L21/02112 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/76837

Abstract: A method for flowable oxide deposition is provided. An oxygen source gas is increased as a function of time or film depth to change the flowable oxide properties such that the deposited film is optimized for gap fill near a substrate surface where high aspect ratio shapes are present. The oxygen gas flow rate increases as the film depth increases, such that the deposited film is optimized for planarization quality at the upper regions of the deposited film.

Abstract translation: 提供了一种可流动氧化物沉积的方法。 作为时间或膜深度的函数，氧源气体增加以改变可流动的氧化物性质，使得沉积膜针对存在高纵横比形状的衬底表面附近的间隙填充进行了优化。 氧气流速随着膜深度的增加而增加，使得沉积膜对沉积膜的上部区域的平坦化质量进行了优化。

公开(公告)号：US08716150B1

公开(公告)日：2014-05-06

申请号：US13860603

申请日：2013-04-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Zhiguo Sun ,  Songkram Srivathanakul ,  Huang Liu ,  Hung-Wei Liu

IPC: H01L21/469 ,  H01L21/31

CPC classification number: H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0234

Abstract: Methods of forming a semiconductor device are provided. The methods include, for example, forming a low-k dielectric having a continuous planar surface, and, after forming the low-k dielectric, subjecting the continuous planar surface of the low-k dielectric to an ethylene plasma enhanced chemical vapor deposition (PECVD) treatment.

Abstract translation: 提供了形成半导体器件的方法。 所述方法包括例如形成具有连续平坦表面的低k电介质，并且在形成低k电介质之后，使低k电介质的连续平面表面经受乙烯等离子体增强化学气相沉积（PECVD ）治疗。