公开(公告)号：US07554127B2

公开(公告)日：2009-06-30

申请号：US10917521

申请日：2004-08-13

申请人： Akira Tanaka ,  Masaaki Onomura

发明人： Akira Tanaka ,  Masaaki Onomura

IPC分类号： H01L31/0304

CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3054 ,  H01S5/34333

摘要： Disclosed is a semiconductor light-emitting element, comprising an n-type cladding layer; a light guide layer positioned on the n-type cladding layer; a multiple quantum well structure active layer positioned on the light guide layer; a p-type carrier overflow prevention layer positioned on the active layer and having an impurity concentration of 5×1018 cm−3 to not more than 3×1019 cm−3; a p-type light guide layer positioned on the p-type carrier overflow prevention layer and having an impurity concentration of 1×1018 cm−3 or more and less than that of the p-type carrier overflow prevention layer; and a p-type cladding layer positioned on the p-type light guide layer and having a band gap narrower than the p-type carrier overflow prevention layer, and a method of manufacturing the same.

摘要翻译： 公开了一种半导体发光元件，包括n型覆层; 定位在n型包覆层上的导光层; 位于导光层上的多量子阱结构有源层; 位于有源层上并且杂质浓度为5×10 18 cm -3至3×10 19 cm -3以下的p型载流子溢出防止层; p型导光层，位于p型载流子溢流防止层上，杂质浓度为1×10 18 cm -3以上且小于p型载流子溢出防止层的杂质浓度; 以及位于p型导光层上并具有比p型载流子溢流防止层窄的带隙的p型覆层，及其制造方法。

公开(公告)号：US20080181275A1

公开(公告)日：2008-07-31

申请号：US11545756

申请日：2006-10-11

申请人： Takayuki Matsuyama ,  Masaaki Onomura

发明人： Takayuki Matsuyama ,  Masaaki Onomura

IPC分类号： H01S5/323 ,  H01L33/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/02212 ,  H01S5/02224 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/0422 ,  H01S5/34333 ,  H01S2301/18

摘要： According to an aspect of the embodiment, there is provided a semiconductor light emitting device including: a gallium nitride substrate; a multilayer film of nitride semiconductors provided on the gallium nitride substrate; a first film including a first silicon nitride layer; and a second film including a second silicon nitride layer and a laminated film provided on the second silicon nitride layer. The gallium nitride substrate and the multilayer film have a laser light emitting facet and a laser light reflecting facet. The first silicon nitride layer is provided on the laser light emitting facet. The multilayer film includes a light emitting layer, and the multilayer film has a laser light emitting facet and a laser light reflecting facet. The second silicon nitride layer is provided on the laser light reflecting facet, and the laminated film includes oxide layer and silicon nitride layer which are alternately laminated.

摘要翻译： 根据实施例的一个方面，提供了一种半导体发光器件，包括：氮化镓衬底; 设置在氮化镓衬底上的氮化物半导体的多层膜; 包括第一氮化硅层的第一膜; 以及包括第二氮化硅层和设置在第二氮化硅层上的层叠膜的第二膜。 氮化镓衬底和多层膜具有激光发射面和激光反射面。 第一氮化硅层设置在激光发射面上。 多层膜包括发光层，多层膜具有激光发射面和激光反射面。 第二氮化硅层设置在激光反射面上，层叠膜包括交替层叠的氧化物层和氮化硅层。

公开(公告)号：US5253264A

公开(公告)日：1993-10-12

申请号：US800250

申请日：1991-11-29

申请人： Nobuo Suzuki ,  Yuzo Hirayama ,  Masaaki Onomura

发明人： Nobuo Suzuki ,  Yuzo Hirayama ,  Masaaki Onomura

IPC分类号： H01S5/06 ,  H01S5/062 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/227 ,  H01S5/34313 ,  H01S5/0618 ,  H01S5/06226 ,  H01S5/12 ,  H01S5/2059 ,  H01S5/2205 ,  H01S5/2275 ,  H01S5/34306

摘要： A semiconductor laser of multiple quantum well structure includes a multiple quantum well active layer having a well layer of In.sub.x Ga.sub.1-x As (0

公开(公告)号：US07737467B2

公开(公告)日：2010-06-15

申请号：US11507598

申请日：2006-08-22

申请人： Wataru Saito ,  Masaaki Onomura

发明人： Wataru Saito ,  Masaaki Onomura

IPC分类号： H01L31/0304

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404

摘要： A nitride semiconductor device comprises: a laminated body; a first and second main electrode provided in a second and third region, respectively, adjacent to either end of the first region on the major surface of the laminated body; and a third main electrode. The laminated body includes a first semiconductor layer of a nitride semiconductor and a second semiconductor layer of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer, the second semiconductor layer being provided on the first semiconductor layer. The third main electrode is provided on the major surface of the laminated body and opposite to the control electrode across the second main electrode.

摘要翻译： 氮化物半导体器件包括：层叠体; 第一和第二主电极分别设置在第二和第三区域中，邻近层压体的主表面上的第一区域的任一端; 和第三主电极。 层叠体包括氮化物半导体的第一半导体层和具有比第一半导体层更宽的带隙的非掺杂或n型氮化物半导体的第二半导体层，第二半导体层设置在第一半导体层上。 第三主电极设置在层叠体的主表面上，并与第二主电极相对的控制电极相对。

公开(公告)号：US07358156B2

公开(公告)日：2008-04-15

申请号：US11376547

申请日：2006-03-16

申请人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

发明人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/32341

摘要： A method of manufacturing a compound semiconductor device comprises forming a scribed groove extending from an edge of a major surface of a laminated body to an internal region on the first major surface. The laminated body has the first major surface and a second major surface and is formed by crystal growth of a compound semiconductor multilayer film on a substrate. The scribed groove is shallow at the edge and deep in the internal region. The method may further comprise separating the laminated body into first and second portions separated by a separation plane including the scribed groove by applying load to the second major surface of the laminated body.

摘要翻译： 一种制造化合物半导体器件的方法包括：形成从层叠体的主表面的边缘延伸到第一主表面的内部区域的划线槽。 层叠体具有第一主表面和第二主表面，并且通过化合物半导体多层膜在基板上的晶体生长而形成。 划线槽边缘浅，内部深处。 该方法还可以包括通过将负载施加到层压体的第二主表面，将层压体分离成由包括划线槽的分离平面分开的第一和第二部分。

公开(公告)号：US20070086496A1

公开(公告)日：2007-04-19

申请号：US11357408

申请日：2006-02-21

申请人： Akira Tanaka ,  Chie Hongo ,  Yoshiyuki Harada ,  Hideto Sugawara ,  Masaaki Onomura ,  Hiroshi Katsuno

发明人： Akira Tanaka ,  Chie Hongo ,  Yoshiyuki Harada ,  Hideto Sugawara ,  Masaaki Onomura ,  Hiroshi Katsuno

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/3407 ,  H01L2924/00014

摘要： A semiconductor light emitting device comprises: a first cladding layer made of nitride semiconductor of a first conductivity type; an active layer provided on the first cladding layer, the active layer including a first barrier layer made of nitride semiconductor, a second barrier layer made of nitride semiconductor, and a well layer made of nitride semiconductor, the well layer being provided between the first barrier layer and the second barrier layer; and a second cladding layer provided on the active layer, the second cladding layer being made of nitride semiconductor of a second conductivity type. The first and second barrier layers and the well layer contain indium. At least one of the first barrier layer and the second barrier layer has a thickness of 30 nm or more.

摘要翻译： 一种半导体发光器件包括：由第一导电类型的氮化物半导体制成的第一覆层; 设置在所述第一包层上的有源层，所述有源层包括由氮化物半导体制成的第一势垒层，由氮化物半导体制成的第二阻挡层，以及由氮化物半导体制成的阱层，所述阱层设置在所述第一栅极 层和第二阻挡层; 以及设置在所述有源层上的第二覆层，所述第二覆层由第二导电类型的氮化物半导体制成。 第一和第二阻挡层和阱层含有铟。 第一阻挡层和第二阻挡层中的至少一个具有30nm以上的厚度。

公开(公告)号：US5347526A

公开(公告)日：1994-09-13

申请号：US40853

申请日：1993-03-31

申请人： Nobuo Suzuki ,  Masaki Tohyama ,  Masaaki Onomura

发明人： Nobuo Suzuki ,  Masaki Tohyama ,  Masaaki Onomura

IPC分类号： H01S5/042 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/227 ,  H01S3/10

CPC分类号： H01S5/06258 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/2275

摘要： A wavelength-tunable semiconductor laser which comprises a semiconductor substrate having first and second major surfaces, a distribution-feedback resonator having an active layer and a cladding layer, formed on the first major surface of the substrate and shaped like a stripe, and a first section and a second section aligned along the length of the resonator, and electrodes formed on the first and second sections of the resonator, respectively, for controlling current densities in the first and second section independently. The laser is characterized in that temperature changes more in the first section than in the second section, due to changes in densities of currents injected into the first and second sections.

摘要翻译： 一种波长可调谐半导体激光器，其包括具有第一和第二主表面的半导体衬底，分布反馈谐振器，其具有有源层和覆层，形成在衬底的第一主表面上并形状为条纹，第一 以及分别形成在谐振器的第一和第二部分上的电极，用于独立地控制第一和第二部分中的电流密度。 激光器的特征在于，由于注入到第一和第二部分的电流密度的变化，第一部分中的温度比第二部分中的温度变化更大。

公开(公告)号：US07602829B2

公开(公告)日：2009-10-13

申请号：US11545756

申请日：2006-10-11

申请人： Takayuki Matsuyama ,  Masaaki Onomura

发明人： Takayuki Matsuyama ,  Masaaki Onomura

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/02212 ,  H01S5/02224 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/0422 ,  H01S5/34333 ,  H01S2301/18

摘要： According to an aspect of the embodiment, there is provided a semiconductor light emitting device including: a gallium nitride substrate; a multilayer film of nitride semiconductors provided on the gallium nitride substrate; a first film including a first silicon nitride layer; and a second film including a second silicon nitride layer and a laminated film provided on the second silicon nitride layer. The gallium nitride substrate and the multilayer film have a laser light emitting facet and a laser light reflecting facet. The first silicon nitride layer is provided on the laser light emitting facet. The multilayer film includes a light emitting layer, and the multilayer film has a laser light emitting facet and a laser light reflecting facet. The second silicon nitride layer is provided on the laser light reflecting facet, and the laminated film includes oxide layer and silicon nitride layer which are alternately laminated.

摘要翻译： 根据实施例的一个方面，提供了一种半导体发光器件，包括：氮化镓衬底; 设置在氮化镓衬底上的氮化物半导体的多层膜; 包括第一氮化硅层的第一膜; 以及包括第二氮化硅层和设置在第二氮化硅层上的层叠膜的第二膜。 氮化镓衬底和多层膜具有激光发射面和激光反射面。 第一氮化硅层设置在激光发射面上。 多层膜包括发光层，多层膜具有激光发射面和激光反射面。 第二氮化硅层设置在激光反射面上，层叠膜包括交替层叠的氧化物层和氮化硅层。

公开(公告)号：US07369592B2

公开(公告)日：2008-05-06

申请号：US11374072

申请日：2006-03-14

申请人： Akira Tanaka ,  Masaaki Onomura

发明人： Akira Tanaka ,  Masaaki Onomura

IPC分类号： H01S3/04

CPC分类号： H01S5/0425 ,  H01S5/02461 ,  H01S5/22 ,  H01S5/32341

摘要： A semiconductor laser device comprises: an active layer; a cladding layer of a first conductivity type; an insulating film; a first electrode; and a pad electrode provided on the first electrode. The cladding layer is provided above the active layer, and has a ridge portion constituting a striped waveguide and non-ridge portions adjacent to both sides of the ridge portion. The insulating film is covering side faces of the ridge portion and an upper face of the non-ridge portions. The first electrode has a gap portion provided above the non-ridge portions. The pad electrode is provided on the first electrode.

摘要翻译： 半导体激光器件包括：有源层; 第一导电类型的覆层; 绝缘膜; 第一电极; 以及设置在第一电极上的焊盘电极。 包覆层设置在有源层上方，并且具有构成条纹波导的脊部和与脊部的两侧相邻的非脊部。 绝缘膜覆盖脊部的侧面和非脊部的上表面。 第一电极具有设置在非脊部之上的间隙部分。 焊盘电极设置在第一电极上。

公开(公告)号：US20070200143A1

公开(公告)日：2007-08-30

申请号：US11507598

申请日：2006-08-22

申请人： Wataru Saito ,  Masaaki Onomura

发明人： Wataru Saito ,  Masaaki Onomura

IPC分类号： H01L31/00

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404

摘要： A nitride semiconductor device comprises: a laminated body; a first and second main electrode provided in a second and third region, respectively, adjacent to either end of the first region on the major surface of the laminated body; and a third main electrode. The laminated body includes a first semiconductor layer of a nitride semiconductor and a second semiconductor layer of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer, the second semiconductor layer being provided on the first semiconductor layer. The third main electrode is provided on the major surface of the laminated body and opposite to the control electrode across the second main electrode.

摘要翻译： 氮化物半导体器件包括：层叠体; 第一和第二主电极分别设置在第二和第三区域中，邻近层压体的主表面上的第一区域的任一端; 和第三主电极。 层叠体包括氮化物半导体的第一半导体层和具有比第一半导体层更宽的带隙的非掺杂或n型氮化物半导体的第二半导体层，第二半导体层设置在第一半导体层上。 第三主电极设置在层叠体的主表面上，并与第二主电极相对的控制电极相对。