公开(公告)号：US20150288143A1

公开(公告)日：2015-10-08

申请号：US14676260

申请日：2015-04-01

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Byung Seok CHOI ,  O Kyun KWON ,  Ki Soo KIM ,  Jong Sool JEONG ,  Su Hwan OH ,  Ki Hong YOON

IPC: H01S5/14 ,  H01S5/068 ,  H01S5/125 ,  H01S5/34

CPC classification number: H01S5/141 ,  H01S3/1055 ,  H01S3/106 ,  H01S5/02284 ,  H01S5/0618 ,  H01S5/06226 ,  H01S5/1221

Abstract: Provided herein is a tunable external cavity laser comprising: a gain medium configured to create an optical signal; an external reflector configured to be coupled to the gain medium, and to comprise a Bragg grating; and a phase control section configured to adjust a phase of an entire laser, but to adjust a wavelength of the laser to a longer wavelength than a peak reflectivity of the external reflector.

Abstract translation: 本文提供了一种可调谐外腔激光器，包括：增益介质，其被配置为产生光信号; 外部反射器，被配置为耦合到所述增益介质，并且包括布拉格光栅; 以及相位控制部，被配置为调整整个激光器的相位，但是将激光器的波长调整到比外部反射器的峰值反射率更长的波长。

公开(公告)号：US06956232B2

公开(公告)日：2005-10-18

申请号：US10740080

申请日：2003-12-18

Applicant: Joseph P. Reynolds

Inventor： Joseph P. Reynolds

IPC: G02F1/017 ,  H01S5/026 ,  H01S5/06 ,  H01L29/06

CPC classification number: B82Y20/00 ,  G02F1/017 ,  G02F1/01725 ,  H01S5/0265 ,  H01S5/0618

Abstract: A semiconductor modulator is disclosed which exhibits a negative alpha parameter at low operating bias. The device includes at least two barrier layers with a quantum well layer therebetween. An additional layer is formed adjacent to the quantum well layer, the additional layer having a bulk bandgap energy greater than the quantum well layer so as to form a stepped well between the barrier layers.

Abstract translation: 公开了一种半导体调制器，其在低工作偏压下表现出负的α参数。 该装置包括至少两个其间具有量子阱层的势垒层。 邻近量子阱层形成附加层，附加层具有大于量子阱层的体带隙能量，以便在势垒层之间形成台阶阱。

公开(公告)号：US20050286588A1

公开(公告)日：2005-12-29

申请号：US11117786

申请日：2005-04-29

Applicant: James Guenter

Inventor： James Guenter

IPC: G06F3/03 ,  H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/183

CPC classification number: H01S5/18308 ,  G06F3/0312 ,  G06F3/0317 ,  G06F3/038 ,  G06F3/042 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/0618 ,  H01S5/0622 ,  H01S5/18311

Abstract: A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench is formed in the at least the top mirror. An aperture is oxidized into the VCSEL. At least one of the bottom DBR mirror, the top DBR mirror, the metal contacts, the trench, and/or the aperture is optimized to optimize the linewidth enhancement factor for use in self mixing applications.

Abstract translation: 针对自混合应用进行了优化的垂直腔面发射激光器（VCSEL）。 VCSEL通常包括形成在衬底上的底部分布式布拉格反射器（DBR）镜。 在底部反射镜上形成有源区。 在活动区域​​上形成顶部DBR镜。 至少在上反射镜中形成沟槽。 孔径被氧化成VCSEL。 底部DBR镜，顶部DBR镜，金属触点，沟槽和/或孔中的至少一个被优化以优化用于自混合应用中的线宽增强因子。

公开(公告)号：US5657157A

公开(公告)日：1997-08-12

申请号：US494255

申请日：1995-06-23

Applicant: Robert J. Lang ,  Julian S. Osinski ,  David F. Welch

Inventor： Robert J. Lang ,  Julian S. Osinski ,  David F. Welch

IPC: H01S5/06 ,  H01S5/10 ,  H01S5/20 ,  H01S5/50 ,  H01S3/00

CPC classification number: H01S5/10 ,  H01S5/20 ,  H01S5/50 ,  H01S5/0618 ,  H01S5/1057

Abstract: A semiconductor light amplifying medium has reduced self-focusing and optical filamentation for providing higher power coherent outputs in broad-area laser and amplifier devices. In one embodiment, a longitudinally inhomogeneous active region has alternating segments of first gain portions and second compensating portions. The compensating portions have a negative self-focusing parameter [.differential.n/.differential.P] and may be light absorbing (negative gain) regions with negative antiguiding factor .alpha. or light amplifying (positive gain) regions with positive antiguiding factor .alpha.. The .alpha.-parameter is defined as the ratio of refractive index change per change in gain, as a function of carrier density. In a second embodiment, the medium may have longitudinally varying peak filament period so that filaments beginning to form in one portion of the active region are subsequently dispersed in a succeeding portion, slowing filament growth. In addition to self-focusing compensation, media with a lower .alpha.-parameter are provided by increasing the barrier height in quantum well active regions, straining or p-doping the active region, or a combination of these methods.

Abstract translation: 半导体光放大介质具有减少的自聚焦和光纤光栅，用于在广域激光和放大器装置中提供更高功率的相干输出。 在一个实施例中，纵向不均匀有源区具有第一增益部分和第二补偿部分的交替段。 补偿部分具有负自聚焦参数[差分n /差分P]，并且可以是具有正抗抗原因子α的负抗原因子α或光放大（正增益）区域的吸光（负增益）区域。 α参数定义为每增益变化的折射率变化率，作为载流子密度的函数。 在第二实施例中，介质可以具有纵向变化的峰值丝线周期，使得在有源区域的一部分中开始形成的长丝随后分散在随后的部分中，从而减慢长丝生长。 除了自聚焦补偿之外，通过增加量子阱活性区域中的势垒高度，对活性区域进行应变或p掺杂或者这些方法的组合来提供具有较低α参数的介质。

公开(公告)号：US5253264A

公开(公告)日：1993-10-12

申请号：US800250

申请日：1991-11-29

Applicant: Nobuo Suzuki ,  Yuzo Hirayama ,  Masaaki Onomura

Inventor： Nobuo Suzuki ,  Yuzo Hirayama ,  Masaaki Onomura

IPC: H01S5/06 ,  H01S5/062 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/343 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01S5/20 ,  H01S5/227 ,  H01S5/34313 ,  H01S5/0618 ,  H01S5/06226 ,  H01S5/12 ,  H01S5/2059 ,  H01S5/2205 ,  H01S5/2275 ,  H01S5/34306

Abstract: A semiconductor laser of multiple quantum well structure includes a multiple quantum well active layer having a well layer of In.sub.x Ga.sub.1-x As (0

公开(公告)号：US07627015B2

公开(公告)日：2009-12-01

申请号：US11117786

申请日：2005-04-29

Applicant: James K. Guenter

Inventor： James K. Guenter

IPC: H01S5/187

CPC classification number: H01S5/18308 ,  G06F3/0312 ,  G06F3/0317 ,  G06F3/038 ,  G06F3/042 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/0618 ,  H01S5/0622 ,  H01S5/18311

Abstract: A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench is formed in the at least the top mirror. An aperture is oxidized into the VCSEL. At least one of the bottom DBR mirror, the top DBR mirror, the metal contacts, the trench, and/or the aperture is optimized to optimize the linewidth enhancement factor for use in self mixing applications.

Abstract translation: 针对自混合应用进行了优化的垂直腔面发射激光器（VCSEL）。 VCSEL通常包括形成在衬底上的底部分布式布拉格反射器（DBR）镜。 在底部反射镜上形成有源区。 在活动区域​​上形成顶部DBR镜。 至少在上反射镜中形成沟槽。 孔径被氧化成VCSEL。 底部DBR镜，顶部DBR镜，金属触点，沟槽和/或孔中的至少一个被优化以优化用于自混合应用中的线宽增强因子。

公开(公告)号：US07359419B2

公开(公告)日：2008-04-15

申请号：US11093240

申请日：2005-03-29

Applicant: James K. Guenter

Inventor： James K. Guenter

IPC: H01S5/00

CPC classification number: H01S5/18308 ,  G06F3/0312 ,  G06F3/0317 ,  G06F3/038 ,  G06F3/042 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/0618 ,  H01S5/0622 ,  H01S5/18311

Abstract: A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench is formed in the at least the top mirror. An aperture is oxidized into the VCSEL. At least one of the bottom DBR mirror, the top DBR mirror, the metal contacts, the trench, and/or the aperture is optimized to make the VCSEL more thermally sensitive to changes in current through the VCSEL.

Abstract translation: 针对自混合应用进行了优化的垂直腔面发射激光器（VCSEL）。 VCSEL通常包括形成在衬底上的底部分布式布拉格反射器（DBR）镜。 在底部反射镜上形成有源区。 在活动区域​​上形成顶部DBR镜。 至少在上反射镜中形成沟槽。 孔径被氧化成VCSEL。 底部DBR镜，顶部DBR镜，金属触点，沟槽和/或孔中的至少一个被优化以使VCSEL对通过VCSEL的电流的变化更加热敏感。

公开(公告)号：US07286583B2

公开(公告)日：2007-10-23

申请号：US11068561

申请日：2005-02-28

Applicant: Milton Feng ,  Nick Holonyak, Jr. ,  Richard Chan ,  Gabriel Walter

Inventor： Milton Feng ,  Nick Holonyak, Jr. ,  Richard Chan ,  Gabriel Walter

IPC: H01S3/13

CPC classification number: H01L33/0016 ,  B82Y20/00 ,  H01L33/08 ,  H01S5/0422 ,  H01S5/0618 ,  H01S5/06203 ,  H01S5/06226 ,  H01S5/06812 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/34313

Abstract: A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base, and emitter regions, to switch back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode. In a form of the method, the electrical signals include an AC excitation signal, and part of each excitation signal cycle is operative to produce stimulated emission, and another part of each excitation signal cycle is operative to produce spontaneous emission.

Abstract translation: 一种制造可控光脉冲的方法包括以下步骤：提供包括半导体材料的集电极，基极和发射极区域的异质结双极晶体管结构; 提供封闭所述晶体管结构的至少一部分的光学谐振腔; 并且相对于集电极，基极和发射极区域耦合电信号，以在产生输出激光脉冲的受激发射模式和自发发射模式之间来回切换。 以该方法的形式，电信号包括AC激励信号，并且每个激励信号周期的一部分可操作以产生受激发射，并且每个激励信号周期的另一部分可操作以产生自发发射。

公开(公告)号：US4964134A

公开(公告)日：1990-10-16

申请号：US254934

申请日：1988-10-04

Applicant: Leslie D. Westbrook ,  Michael J. Adams

Inventor： Leslie D. Westbrook ,  Michael J. Adams

IPC: H01S5/00 ,  H01L33/06 ,  H01S5/06 ,  H01S5/12 ,  H01S5/223 ,  H01S5/30 ,  H01S5/34 ,  H01S5/343

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01S5/12 ,  H01S5/305 ,  H01S5/34 ,  H01S5/0618 ,  H01S5/223 ,  H01S5/3054 ,  H01S5/3428 ,  H01S5/34306 ,  H01S5/34313

Abstract: A laser structure with highly p-doped active material which has a particularly low linewidth enhancement factor .alpha.. Hence the emission linewidth of the laser structure is relatively small. The structure shows a particular relationship between the photon energy, the band gap energy and the conduction band quasi Fermi level of the active material which minimizes .alpha., the valence band being degenerate. These conditions can be used to design low .alpha. laser structures. Such structures are of particular application to directly modulated lasers or absorption modulators and also find application in coherent optical detection.

公开(公告)号：US20120294320A1

公开(公告)日：2012-11-22

申请号：US13438685

申请日：2012-04-03

Applicant: Brian Corbett ,  Brendan Roycroft ,  Liam Barry ,  Frank Smyth ,  Kai Shi

Inventor： Brian Corbett ,  Brendan Roycroft ,  Liam Barry ,  Frank Smyth ,  Kai Shi

IPC: H01S3/10

CPC classification number: H01S5/06255 ,  H01S5/0014 ,  H01S5/0618

Abstract: According to the invention there is provided a tunable laser system for use in an optical communication system, said tunable laser system comprising a multi-section laser separated by at least two slots to define a plurality of sections, each section adapted to provide an optical gain. Each section comprises a separate control means to provide an adjustable optical gain in each section. The tunable laser system and method of the present invention provides a wide tuning range, narrow linewidth and fast switching times.

Abstract translation: 根据本发明，提供了一种用于光通信系统的可调谐激光系统，所述可调谐激光系统包括由至少两个狭缝分隔的多段激光以限定多个部分，每个部分适于提供光学增益 。 每个部分包括单独的控制装置，以在每个部分中提供可调节的光学增益。 本发明的可调谐激光系统和方法提供宽调谐范围，窄线宽和快速切换时间。