公开(公告)号：US10586886B2

公开(公告)日：2020-03-10

申请号：US16071451

申请日：2016-01-20

Applicant: Goertek Inc.

Inventor： Quanbo Zou

IPC: H01L33/00 ,  H01L33/48 ,  H01L25/075 ,  H01L23/00

Abstract: A micro-LED (3r) transfer method and a manufacturing method are disclosed. The micro-LED (3r) transfer method comprises: forming a sacrificial post (4) on a micro-LED (3r) to be picked-up on a carrier substrate (1); bonding the micro-LED (3r) to be picked-up with a pickup substrate (5) via the sacrificial post (4); lifting-off the micro-LED (3r) to be picked-up from the carrier substrate (1); bonding the micro-LED (3r) on the pickup substrate (5) with a receiving substrate (12); and lifting-off the micro-LED (3r) from the pickup substrate (5). A complicated pickup head is not necessary, and the technical solution is relatively simple.

公开(公告)号：US20190386454A1

公开(公告)日：2019-12-19

申请号：US16465745

申请日：2016-12-05

Applicant: Goertek, Inc.

Inventor： Quanbo Zou ,  Zhe Wang

IPC: H01S5/02 ,  H01S5/183 ,  H01S5/042

Abstract: A micro laser diode transfer method and a manufacturing method comprise: forming a bonding layer (515) on a receiving substrate (513), wherein first type electrodes (514) are connected to the bonding layer (515); bringing a first side of the micro laser diodes (500r) on a carrier substrate (520) into contact with the bonding layer (515), wherein the carrier substrate (520) is laser-transparent; and irradiating selected micro laser diodes (500r) with laser from the side of the carrier substrate (520) to lift-off the selected micro laser diodes (500r) from the carrier substrate (520). This method may improve yield.

公开(公告)号：US10319697B2

公开(公告)日：2019-06-11

申请号：US15535683

申请日：2015-05-21

Applicant: Goertek, Inc.

Inventor： Quanbo Zou ,  Zhe Wang

IPC: H01L23/00 ,  H01L33/00 ,  H01L25/075 ,  H01L33/62

Abstract: A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED, comprises: forming micro-LEDs (202) on a laser-transparent original substrate (201), providing an anisotropic conductive layer (203) on a receiving substrate (204), bringing the micro-LEDs (202) into contact with the anisotropic conductive layer (203) on the receiving substrate (204), irradiating the original substrate (201) with laser from the original substrate side to lift-off the micro-LEDs (202) from the original substrate (201), and processing the anisotropic conductive layer (203), to electrically connect the micro-LEDs (202) with the pads (205′) on the receiving substrate (204).

公开(公告)号：US10141287B2

公开(公告)日：2018-11-27

申请号：US15531194

申请日：2015-07-14

Applicant: Goertek, Inc.

Inventor： Quanbo Zou ,  Zhe Wang

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/52 ,  H01L33/62 ,  H01L33/20

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate, wherein the micro-LEDs are lateral micro-LEDs whose P electrodes and N electrodes are located on one side; bringing the P electrodes and N electrodes of the lateral micro-LEDs into contact with pads preset on a receiving substrate; and irradiating the original substrate with laser from the original substrate side to lift-off the lateral micro-LEDs from the original substrate. A technical effect of using lateral micro-LEDs lies in that the processing for N metal electrode after the micro-LED transfer can be omitted.

公开(公告)号：US20170330867A1

公开(公告)日：2017-11-16

申请号：US15531194

申请日：2015-07-14

Applicant: Goertek, Inc.

Inventor： Quanbo Zou ,  Zhe Wang

IPC: H01L25/075 ,  H01L33/52 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/52 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/83192 ,  H01L2933/005 ,  H01L2933/0066

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate, wherein the micro-LEDs are lateral micro-LEDs whose P electrodes and N electrodes are located on one side; bringing the P electrodes and N electrodes of the lateral micro-LEDs into contact with pads preset on a receiving substrate; and irradiating the original substrate with laser from the original substrate side to lift-off the lateral micro-LEDs from the original substrate. A technical effect of using lateral micro-LEDs lies in that the processing for N metal electrode after the micro-LED transfer can be omitted.

公开(公告)号：US11417463B2

公开(公告)日：2022-08-16

申请号：US16643361

申请日：2017-09-05

Applicant: Goertek, Inc.

Inventor： Quanbo Zou ,  Zhe Wang ,  Qinglin Song ,  Debo Sun

IPC: H01F7/06 ,  H01F41/04 ,  H01F5/00 ,  H01F41/12

Abstract: Disclosed are a method for manufacturing a coil, a coil, and an electronic device. The method includes: bonding a first side of a metal sheet onto a laser-transmitting substrate by an adhesive layer; cutting a coil pattern on a second side of the metal sheet by the laser to form a coil running through the two sides of the metal sheet on the metal sheet; bonding the second side of the metal sheet onto an adhesive tape; transmitting the laser through the laser-transmitting substrate to act on the adhesive layer to detach the laser-transmitting substrate and the adhesive layer from the first side of the metal sheet; exposing the coil pattern on the first side of the metal sheet; and forming an encapsulation layer on the coil to encapsulate the first side of the coil.

公开(公告)号：US11388525B2

公开(公告)日：2022-07-12

申请号：US16614984

申请日：2017-05-31

Applicant: GOERTEK, INC.

Inventor： Quanbo Zou

IPC: H04R19/04 ,  B81B7/00 ,  B81C1/00 ,  H04R1/04 ,  H04R31/00

Abstract: A MEMS microphone and a manufacturing method thereof are provided. The MEMS microphone comprises a MEMS microphone chip and a housing with an acoustic port. The MEMS microphone chip is mounted in the housing, and a mesh plug is mounted in the acoustic port and made from a mesh material which has a mesh structure that is suitable for passage of sound.

公开(公告)号：US11117797B2

公开(公告)日：2021-09-14

申请号：US16339460

申请日：2016-10-08

Applicant: GOERTEK. INC

Inventor： Quanbo Zou ,  Zhe Wang ,  You Wang ,  Xianbin Wang

IPC: H04R25/00 ,  B81B7/00 ,  H04R1/04 ,  H04R19/00 ,  H04R19/01

Abstract: The present invention discloses a MEMS device and an electronics apparatus. The MEMS device comprises: a substrate; a MEMS element placed on the substrate; a cover encapsulating the MEMS element together with the substrate; and a port for the MEMS element to access outside, wherein the port is provided with a filter which has mesh holes and includes electrets to prevent particles from entering into the MEMS element.

公开(公告)号：US11024611B1

公开(公告)日：2021-06-01

申请号：US16620224

申请日：2017-06-09

Applicant: Goertek, Inc.

Inventor： Quanbo Zou ,  Peixuan Chen ,  Xiangxu Feng ,  Tao Gan ,  Xiaoyang Zhang ,  Zhe Wang

IPC: H01L27/12 ,  H01L25/075 ,  H01L21/67 ,  H01L21/677 ,  H01L33/00 ,  H01L51/00 ,  H01L21/683 ,  H01L21/60

Abstract: A micro-LED transfer method, manufacturing method and display device are provided. The micro-LED transfer method comprises: bonding the micro-LED array on a first substrate onto a receiving substrate through micro-bumps, wherein the first substrate is laser transparent; applying underfill into a gap between the first substrate and the receiving substrate; irradiating laser onto the micro-LED array from a side of the first substrate to lift-off the micro-LED array from the first substrate; and removing the underfill.

公开(公告)号：US10971890B2

公开(公告)日：2021-04-06

申请号：US16465745

申请日：2016-12-05

Applicant: Goertek, Inc.

Inventor： Quanbo Zou ,  Zhe Wang

IPC: H01S5/02 ,  H01S5/042 ,  H01S5/183 ,  H01S5/42 ,  H01S5/0234 ,  H01S5/022 ,  H01S5/40

Abstract: A micro laser diode transfer method and a manufacturing method comprise: forming a bonding layer (515) on a receiving substrate (513), wherein first type electrodes (514) are connected to the bonding layer (515); bringing a first side of the micro laser diodes (500r) on a carrier substrate (520) into contact with the bonding layer (515), wherein the carrier substrate (520) is laser-transparent; and irradiating selected micro laser diodes (500r) with laser from the side of the carrier substrate (520) to lift-off the selected micro laser diodes (500r) from the carrier substrate (520). This method may improve yield.