公开(公告)号：US06869863B2

公开(公告)日：2005-03-22

申请号：US10379457

申请日：2003-03-03

申请人： Shoji Nishida

发明人： Shoji Nishida

IPC分类号： H01L31/04 ,  H01L21/208 ,  H01L31/068 ,  H01L31/18 ,  H01L21/00 ,  C30B19/00

CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/955

摘要： Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step.

摘要翻译： 金属级硅在模具中熔融固化，形成板状硅层，在其上形成晶体硅层，从而提供廉价的太阳能电池，而不需要切片步骤。

公开(公告)号：US06824609B2

公开(公告)日：2004-11-30

申请号：US10229123

申请日：2002-08-28

申请人： Tetsuro Saito ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Masaki Mizutani

发明人： Tetsuro Saito ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Masaki Mizutani

IPC分类号： C30B1900

CPC分类号： C30B19/064 ,  C30B19/02 ,  C30B19/06 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/1016 ,  Y10T117/1024

摘要： A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.

摘要翻译： 提供一种液相生长方法，其包括将种子基底浸入溶液中，其中晶体原料熔化在其中并在基底上生长晶体，其中在容器的底部设置有用于调节流动的翅片 从容器中沿径向外侧的中心部分的溶液; 流量调节板设置在容器的内侧壁附近，用于调节溶液从底部向上的流动; 并且通过翅片和流动调节板的作用调节溶液的流动以使溶液与种子基底接触来旋转容器。 因此，提供了一种液相生长方法和装置，其能够提供高生长速率，并且即使在一批中填充多个基板时，基板之间或同一基板内的生长速度几乎没有差异。

公开(公告)号：US06818104B2

公开(公告)日：2004-11-16

申请号：US10669002

申请日：2003-09-24

申请人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

发明人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

IPC分类号： C25D1700

CPC分类号： H01L21/02032 ,  C25D11/32 ,  C25D17/10 ,  H01L21/0203 ,  H01L21/76259 ,  H01L29/0657 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363

摘要： In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).

摘要翻译： 在利用薄膜晶体半导体层制造半导体部件和太阳能电池的方法中，该方法包括以下步骤：（1）阳极氧化第一基板的表面以至少形成多孔层 （2）至少在多孔层的表面上形成半导体层，（3）在其周边区域去除半导体层，（4）将第二基板接合到半导体层的表面， （5）在所述多孔层的所述部分处从所述第一基板分离所述半导体层，以及（6）分离后处理所述第一基板的表面并重复上述步骤（1）至（5）。

公开(公告)号：US06756289B1

公开(公告)日：2004-06-29

申请号：US09638398

申请日：2000-08-15

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

IPC分类号： H01L2146

CPC分类号： H01L21/02032 ,  C30B19/12 ,  H01L21/02381 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/2007 ,  H01L21/3063 ,  H01L21/76251 ,  H01L29/66772 ,  H01L29/78654 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/1804 ,  H01L33/0062 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

摘要： To accomplish both of higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.

摘要翻译： 为了在半导体部件中实现更高的晶体性能和更低的成本，并且以低成本制造具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件，（a）形成 （b）在还原性气氛下在高温下将多孔层浸入其中溶解要生长的半导体层形成元素的熔融溶液中，以生长晶体半导体层 在多孔层的表面上，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。

公开(公告)号：US06500731B1

公开(公告)日：2002-12-31

申请号：US09662604

申请日：2000-09-14

申请人： Katsumi Nakagawa ,  Shoji Nishida

发明人： Katsumi Nakagawa ,  Shoji Nishida

IPC分类号： H01L2146

CPC分类号： H01L21/6835 ,  H01L21/76259 ,  H01L21/76838 ,  H01L31/022433 ,  H01L31/0475 ,  H01L31/048 ,  H01L31/1804 ,  H01L31/1896 ,  H01L2221/68359 ,  H01L2924/3025 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for producing a semiconductor device module comprises the steps of forming a first substrate having a separation layer having thereon a plurality of independent semiconductor layers and semiconductor devices individually formed on the plurality of semiconductor layers, electrically connecting the semiconductor devices one another on the first substrate, and separating the plurality of semiconductor layers from the first substrate at the separation layer to transfer the semiconductor layers to a second substrate.

摘要翻译： 一种制造半导体器件模块的方法包括以下步骤：形成具有分离层的第一衬底，其上具有多个独立的半导体层和分别形成在所述多个半导体层上的半导体器件，所述半导体器件分别形成在所述多个半导体层上， 衬底，并且在分离层处将多个半导体层与第一衬底分离，以将半导体层转移到第二衬底。

公开(公告)号：US06391108B2

公开(公告)日：2002-05-21

申请号：US09208377

申请日：1998-12-10

申请人： Shoji Nishida ,  Katsumi Nakagawa ,  Noritaka Ukiyo ,  Masaaki Iwane

发明人： Shoji Nishida ,  Katsumi Nakagawa ,  Noritaka Ukiyo ,  Masaaki Iwane

IPC分类号： C30B1900

CPC分类号： C30B19/06 ,  C30B19/02 ,  C30B29/06

摘要： Provided are a liquid phase growth method of silicon crystal comprising a step of injecting a source gas containing at least silicon atoms into a solvent to decompose the source gas and, simultaneously therewith, dissolving the silicon atoms into the solvent, thereby supplying the silicon atoms into the solvent, and a step of dipping or contacting a substrate into or with the solvent, thereby growing a silicon crystal on the substrate; and a method of producing a solar cell utilizing the aforementioned method. Also provided is a liquid phase growth apparatus of a silicon crystal comprising means for holding a solvent in which silicon atoms are dissolved, and means for dipping or contacting a substrate into or with the solvent, the apparatus further comprising means for injecting a source gas containing at least silicon atoms into the solvent. These provide a liquid phase growth method of a silicon crystal and a production method of a solar cell each having high volume productivity and permitting continuous growth.

摘要翻译： 提供了一种硅晶体的液相生长方法，其包括将至少含有硅原子的源气体注入溶剂中以分解源气体，同时将硅原子溶解到溶剂中，从而将硅原子供给到 溶剂，以及将基材浸渍或接触溶剂或与溶剂接触的步骤，从而在基材上生长硅晶体; 以及利用上述方法制造太阳能电池的方法。 还提供了一种硅晶体的液相生长装置，其包括用于保持其中硅原子溶解的溶剂的装置，以及用于将基底浸入或接触溶剂或与溶剂接触的装置，该装置还包括用于注入含有 至少硅原子进入溶剂。 这些提供硅晶体的液相生长方法和各自具有高体积生产率并允许连续生长的太阳能电池的制造方法。

公开(公告)号：US06211038B1

公开(公告)日：2001-04-03

申请号：US09047325

申请日：1998-03-25

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Yukiko Iwasaki

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Yukiko Iwasaki

IPC分类号： H01L2176

CPC分类号： H01L21/76259

摘要： A method for manufacturing a thin-film crystalline solar cell includes the steps of (i) forming a porous layer including a large number of fine pores in a surface portion of a crystalline substrate, (ii) transforming a part of the porous layer including the surface thereof into a smooth layer which does not include fine pores by providing the porous layer with excitation energy, and (iii) peeling the smooth layer from the substrate. The excitation energy is provided, for example, by performing heat treatment in a hydrogen atmosphere, irradiating with light having a wavelength equal to or less than 600 nm, or irradiating with an electron beam. It is thereby possible to form a thin-film crystalline semiconductor layer on an inexpensive and flexible substrate by simple processes.

摘要翻译： 制造薄膜结晶太阳能电池的方法包括以下步骤：（i）在结晶基材的表面部分形成包含大量细孔的多孔层，（ii）将包含 通过向多孔层提供激发能量而将其表面形成不包括细孔的光滑层，以及（iii）从基板剥离光滑层。 励磁能量例如通过在氢气氛中进行热处理，用波长等于或小于600nm的光照射或用电子束照射来提供。 从而可以通过简单的工艺在便宜且柔性的基板上形成薄膜晶体半导体层。

公开(公告)号：US5575862A

公开(公告)日：1996-11-19

申请号：US352034

申请日：1994-11-30

申请人： Shoji Nishida

发明人： Shoji Nishida

IPC分类号： H01L31/04 ,  H01L21/20 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/18 ,  H01L31/06 ,  H01L31/0368

CPC分类号： H01L31/0745 ,  H01L31/03921 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/186 ,  Y02E10/545 ,  Y02E10/546 ,  Y02P70/521

摘要： This invention provides an inexpensive polycrystalline silicon solar cell having a large grain size polycrystalline semiconductor layer grown on a low-cost metallurgical grade (MG) silicon substrate, and a process for its production. The polycrystalline silicon solar cell comprises a MG-silicon substrate, a metal oxide layer formed thereon and a polycrystalline silicon layer formed on the metal oxide layer. The process for producing the polycrystalline silicon solar cell comprises the steps of i) depositing the metal oxide layer on the MG-silicon substrate, ii) depositing a silicon layer on the surface of the metal oxide layer, iii) depositing a cap layer on the surface of the silicon layer and melting the silicon layer by heating from the upper part of the cap layer, followed by solidification to form a polycrystalline silicon layer, and iv) removing the cap layer and forming a semiconductor junction on the surface of the polycrystalline silicon layer.

摘要翻译： 本发明提供了一种在低成本冶金级（MG）硅衬底上生长的具有大晶粒尺寸多晶半导体层的便宜的多晶硅太阳能电池及其生产方法。 多晶硅太阳能电池包括MG-硅衬底，在其上形成的金属氧化物层和形成在金属氧化物层上的多晶硅层。 制造多晶硅太阳能电池的方法包括以下步骤：i）将金属氧化物层沉积在MG-硅衬底上，ii）在该金属氧化物层的表面上沉积一层硅层，iii） 表面，并且通过从盖层的上部加热熔化硅层，然后固化形成多晶硅层，以及iv）去除覆盖层并在多晶硅的表面上形成半导体结 层。

公开(公告)号：US5492859A

公开(公告)日：1996-02-20

申请号：US369325

申请日：1995-01-06

申请人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida

发明人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/2022 ,  H01L21/30604 ,  H01L21/76251 ,  H01L21/76256 ,  Y10S438/977

摘要： A process for producing a semiconductor device substrate comprises the steps of making a first substrate member porous, forming an insulating layer on a second substrate member, forming an amorphous layer on the insulating layer on the second substrate member, bonding the porous first substrate member to the amorphous layer at a temperature of an atmosphere in which the amorphous layer at least does not crystallize, causing solid-phase epitaxial growth of the amorphous layer by utilizing the porous first substrate member as crystal growth seed, and removing the bonded first substrate member after completion of the epitaxial growth by chemical etching.

摘要翻译： 一种制造半导体器件基板的方法包括以下步骤：使第一基板部件多孔，在第二基板部件上形成绝缘层，在第二基板部件上的绝缘层上形成非晶层，将多孔第一基板部件接合到 在非晶层至少不结晶的气氛的温度下的非晶层，通过利用多孔第一基板构件作为晶体生长种子，引起非晶层的固相外延生长，以及在第一基板构件之后移除结合的第一基板构件 通过化学蚀刻完成外延生长。

公开(公告)号：US5103851A

公开(公告)日：1992-04-14

申请号：US623526

申请日：1990-12-07

申请人： Shoji Nishida ,  Takao Yonehara

发明人： Shoji Nishida ,  Takao Yonehara

IPC分类号： H01L31/04 ,  H01L21/20 ,  H01L27/142 ,  H01L31/042 ,  H01L31/18

CPC分类号： H01L21/0242 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L31/03682 ,  H01L31/0475 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1852 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar battery characterized in the following respects of having at least one semiconductor multilayer structure (A) having at least, an electrode (a.sub.1); a semiconductor crystal (a.sub.2) of a first conductivity type formed on the electrode (a.sub.1); and at least one set of laminate layers consisting of a high resistance semiconductor layer (a.sub.3) and a semiconductor layer (a.sub.4) of a second conductivity type and a semiconductor layer (a.sub.5) of the first conductivity type which sequentially formed so as to cover the semiconductor crystal (a.sub.2) of the first conductivity type and at least one semiconductor multilayer structure (B) having at least: an electrode (b.sub.1); a semiconductor crystal (b.sub.2) of the second conductivity type formed on the electrode (b.sub.1); and at least one set of laminate layers consisting of a high resistance semiconductor layer (b.sub.3) and a semiconductor layer (b.sub.4) of the first conductivity type and a semiconductor layer (b.sub.5) of the second conductivity type which are alternately arranged on the same insulative substrate. The semiconductor multilayer structure sections (A) and (B) are alternately electrically connected by high resistance semiconductor layers (C) formed so as to cover the semiconductor multilayer structure sections (A) and (B). The surfaces of the high resistance semiconductor layers (C) form light receiving surfaces.

摘要翻译： 一种太阳能电池，其特征在于具有至少一个至少具有电极（a1）的至少一个半导体多层结构（A） 形成在电极（a1）上的第一导电类型的半导体晶体（a2）; 以及由高电阻半导体层（a3）和第二导电类型的半导体层（a4）和第一导电类型的半导体层（a5）组成的至少一组层叠层，其顺序地形成为覆盖 具有第一导电类型的半导体晶体（a2）和至少一个至少具有电极（b1）的半导体多层结构（B） 形成在电极（b1）上的第二导电类型的半导体晶体（b2）; 以及由第一导电类型的高电阻半导体层（b3）和半导体层（b4）和第二导电类型的半导体层（b5）组成的层叠层的至少一组交替地布置在相同的绝缘体 基质。 半导体多层结构部（A）和（B）通过形成为覆盖半导体多层结构部（A）和（B）的高电阻半导体层（C）交替电连接。 高电阻半导体层（C）的表面形成光接收表面。