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    Yaw rate sensor using surface acoustic wave
    22.
    发明申请
    Yaw rate sensor using surface acoustic wave 失效
    偏航速率传感器采用表面声波

    公开(公告)号：US20090133495A1

    公开(公告)日：2009-05-28

    申请号：US12292709

    申请日：2008-11-25

    申请人： Kazuki Arakawa ,  Kazuhiko Kano ,  Akihiko Teshigahara

    发明人： Kazuki Arakawa ,  Kazuhiko Kano ,  Akihiko Teshigahara

    IPC分类号： G01P3/00 ,  G01C19/56

    CPC分类号： G01C19/5698

    摘要： A yaw rate sensor has two sets of exciting electrodes, perturbative weights and two sets of detecting electrodes on a surface of a piezoelectric substrate. The exciting electrodes excite first surface acoustic waves transmitted through the surface of the substrate in a propagation direction. The weights are oscillated by the waves and excite a second surface acoustic wave, transmitted through the surface of the substrate in a detection direction orthogonal to the propagation direction, in response to a yaw applied to the weights. The detecting electrodes measure an intensity of the second surface acoustic wave to detect the yaw rate. The sets of exciting electrodes are symmetrically placed with respect to a driving axis extending straight along the propagation direction. The group of weights is symmetric with respect to the driving axis.

    摘要翻译： 横摆率传感器在压电基板的表面上具有两组激励电极，扰动重量和两组检测电极。 励磁电极在传播方向上激发透过基板表面的第一表面声波。 权重由波振荡，并且响应于施加到权重的偏航，激发在与传播方向正交的检测方向上透射通过基板的表面的第二表面声波。 检测电极测量第二声表面波的强度以检测横摆率。 激励电极组相对于沿着传播方向直线延伸的驱动轴对称地放置。 重量组相对于驱动轴对称。

    Angular rate sensor
    25.
    发明申请
    Angular rate sensor 有权
    角速度传感器

    公开(公告)号：US20080028855A1

    公开(公告)日：2008-02-07

    申请号：US11878441

    申请日：2007-07-24

    申请人： Kazuhiko Kano ,  Akihiko Teshigahara ,  Kazuki Arakawa ,  Kazushi Asami

    发明人： Kazuhiko Kano ,  Akihiko Teshigahara ,  Kazuki Arakawa ,  Kazushi Asami

    IPC分类号： G01C19/00

    CPC分类号： G01C19/5698

    摘要： An angular rate sensor comprises a piezoelectric film having a first and a second surfaces forming an x-y plane and utilizes a perturbation mass coherently vibrating elastic acoustic waves on which a Coriolis force acts when the angular rate sensor undergoes a rotary motion about an x-direction. A first elastic acoustic wave is excited in the piezoelectric film by a driving transducer and a second elastic acoustic wave generated by the Coriolis force proportional to an angular rate of the rotary motion of the angular rate sensor itself is detected by the detecting transducer. The angular rate sensor further comprises at least a first electrode disposed on the first surface of the piezoelectric film for discharging a surface charge caused due to piezoelectric effect at the lower surface of the film in which the first elastic acoustic wave is excited.

    摘要翻译： 角速率传感器包括具有形成x-y平面的第一和第二表面的压电膜，并且当角速率传感器经历围绕x方向的旋转运动时，利用科里奥利力作用的扰动质量相干振动的弹性声波。 第一弹性声波通过驱动传感器在压电膜中激发，并且由与角速率传感器本身的旋转运动的角速度成比例的科里奥利力产生的第二弹性声波由检测换能器检测。 角速率传感器还包括至少第一电极，其设置在压电膜的第一表面上，用于在其中激发第一弹性声波的膜的下表面处排出由于压电效应引起的表面电荷。

    Capacitance type physical quantity sensor
    26.
    发明授权
    Capacitance type physical quantity sensor 有权
    电容式物理量传感器

    公开(公告)号：US07201053B2

    公开(公告)日：2007-04-10

    申请号：US10834183

    申请日：2004-04-29

    申请人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

    发明人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

    IPC分类号： G01P15/125 ,  G01P9/04

    CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    摘要： A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.

    摘要翻译： 电容式物理量传感器检测物理量。 传感器包括可移动部分，其包括可动电极和包括固定电极的固定部分。 固定电极包括面向可动电极的检测面的检测面。 可移动电极可以根据物理量朝向固定电极移动，使得检测表面之间的距离是可变的。 可移动和固定电极中的至少一个包括凹槽。 凹槽设置在可移动和固定电极中的一个的顶部或底部上，具有从顶部或底部的预定深度，并且从检测表面延伸到相对的表面。

    Optical device having movable portion and method for manufacturing the same
    27.
    发明授权
    Optical device having movable portion and method for manufacturing the same 失效
    具有可动部的光学装置及其制造方法

    公开(公告)号：US07105902B2

    公开(公告)日：2006-09-12

    申请号：US10752588

    申请日：2004-01-08

    申请人： Kazushi Asami ,  Kazuhiko Kano ,  Tetsuo Y Shioka

    发明人： Kazushi Asami ,  Kazuhiko Kano ,  Tetsuo Y Shioka

    IPC分类号： H01L29/82

    CPC分类号： G02B26/0841

    摘要： An optical device includes a semiconductor substrate having an opening, a support member disposed on the substrate, and a movable portion disposed on the opening of the substrate. The movable portion is supported by the support member so that the movable portion is movable. The device has a large scanning angle. Further, the device can scan widely at any frequency.

    摘要翻译： 光学装置包括具有开口的半导体衬底，设置在衬底上的支撑构件和设置在衬底的开口上的可移动部分。 可移动部分由支撑构件支撑，使得可移动部分是可移动的。 该装置具有较大的扫描角度。 此外，该设备可以以任何频率广泛扫描。

    Method of manufacturing semiconductor device capable of sensing dynamic quantity
    28.
    发明授权
    Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
    能够感测动态量的半导体器件的制造方法

    公开(公告)号：US06753201B2

    公开(公告)日：2004-06-22

    申请号：US10154784

    申请日：2002-05-28

    申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    IPC分类号： H01L2100

    CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

    摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

    摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

    Method for manufacturing semiconductor device
    29.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US06713403B2

    公开(公告)日：2004-03-30

    申请号：US10384562

    申请日：2003-03-11

    申请人： Junji Oohara ,  Kazuhiko Kano ,  Hiroshi Muto

    发明人： Junji Oohara ,  Kazuhiko Kano ,  Hiroshi Muto

    IPC分类号： H01L2100

    CPC分类号： B81C1/0019 ,  B81C1/00579 ,  B81C1/00626 ,  B81C2201/0132 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    摘要： A method for manufacturing a semiconductor device having a movable unit includes a step of forming an SOI substrate that includes a semiconductor substrate, an insulating layer, and a semiconductor layer. The method further includes a step of dry etching the semiconductor layer to form a trench and a step of dry etching a sidewall defining the trench at a portion adjacent to a bottom of the trench to form the movable unit. The later dry etching is implemented with a charge building up on a surface of the insulating layer that is exposed during the former dry etching to etch the portion. In addition, the later dry etching is implemented at an etching rate higher than that at which the former dry etching is implemented to reduce the deposition amount of a protection film deposited on a reverse side of the movable unit during the later dry etching.

    摘要翻译： 一种制造具有可移动单元的半导体器件的方法包括形成包括半导体衬底，绝缘层和半导体层的SOI衬底的步骤。 该方法还包括干法蚀刻半导体层以形成沟槽的步骤，以及在邻近沟槽底部的部分干蚀刻限定沟槽的侧壁以形成可移动单元的步骤。 稍后的干蚀刻通过在前一次干蚀刻中暴露的绝缘层的表面上积累的电荷来实现，以蚀刻该部分。 此外，稍后的干蚀刻以比实施前述干蚀刻的蚀刻速率更高的蚀刻速率来实现，以减少在稍后的干蚀刻期间沉积在可移动单元的反面上的保护膜的沉积量。

    Semiconductor acceleration sensor with movable electrode
    30.
    发明授权
    Semiconductor acceleration sensor with movable electrode 失效
    具有可移动电极的半导体加速度传感器

    公开(公告)号：US5572057A

    公开(公告)日：1996-11-05

    申请号：US360940

    申请日：1994-12-21

    申请人： Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yoshinori Ohtsuka ,  Kazuhiko Kano

    发明人： Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yoshinori Ohtsuka ,  Kazuhiko Kano

    IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/82

    CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10S73/01

    摘要： Adverse effects due to electrostatic force between a semiconductor substrate and a movable electrode are avoided with a new structure. A movable electrode of beam structure is disposed at a specified interval above a p-type silicon substrate. Fixed electrodes, each composed of an impurity diffusion layer, are disposed on both sides of the movable electrode on the p-type silicon substrate; these fixed electrodes are self-aligningly with respect to the movable electrode. The movable electrode is displaced in accompaniment to the action of acceleration, and acceleration is detected by change (fluctuation) in current between the fixed electrodes generated by means of this displacement. Additionally, an electrode for movable electrode upward-movement use is disposed above the movable electrode, a potential difference is given between the movable electrode and the electrode for movable electrode upward-movement use, and attractive force of the movable electrode to the silicon substrate is alleviated.

    摘要翻译： 通过新的结构避免了由于半导体衬底和可移动电极之间的静电力引起的不利影响。 光束结构的可移动电极以指定的间隔设置在p型硅衬底上方。 每个由杂质扩散层构成的固定电极设置在p型硅衬底上的可移动电极的两侧; 这些固定电极相对于可动电极自对准。 可移动电极伴随着加速度的作用而移动，并且通过由该位移产生的固定电极之间的电流的变化（波动）来检测加速度。 另外，可动电极向上移动用的电极设置在可动电极的上方，在可动电极向上移动用的电极之间施加电位差，并且可移动电极对硅衬底的吸引力为 缓解