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公开(公告)号：US06399460B1
公开(公告)日：2002-06-04
申请号：US09679884
申请日：2000-10-05
申请人： Yasuo Yamaguchi , Hidekazu Yamamoto
发明人： Yasuo Yamaguchi , Hidekazu Yamamoto
IPC分类号： H01L2176
CPC分类号： H01L21/76264 , H01L21/76283 , H01L29/78609 , H01L29/78615 , H01L29/78618 , Y10S257/913
摘要： A method of manufacturing a semiconductor device including the steps of (a) forming an element isolation insulating film in an element isolation region of a SOI substrate of a stacked structure in which a semiconductor substrate, insulating layer, and semiconductor layer are stacked in this order, and (b) forming, in an element formation region of the SOI substrate, a transistor having a channel formation region selectively disposed in a main surface of the semiconductor layer, a gate structure on the channel formation region, and source/drain regions disposed is the main surface of the semiconductor layer and the adjacent channel formation region. The method also includes the step of (c) selectively growing, after said steps (a) and (b), a polycrystal semiconductor layer on the source/drain regions in a self-aligned manner, which is prescribed by the element isolation insulating film and the gate structure.
摘要翻译： 一种制造半导体器件的方法，包括以下步骤：（a）在层叠结构的SOI衬底的元件隔离区域中形成元件隔离绝缘膜，其中半导体衬底，绝缘层和半导体层以该顺序堆叠 ，以及（b）在所述SOI衬底的元件形成区域中形成具有选择性地设置在所述半导体层的主表面中的沟道形成区域的晶体管，所述沟道形成区域上的栅极结构和设置在所述沟道形成区域的源极/漏极区域 是半导体层和相邻沟道形成区域的主表面。 该方法还包括以下步骤：（c）在所述步骤（a）和（b）之后，以元件隔离绝缘膜规定的自对准方式在源极/漏极区上选择性地生长多晶半导体层 和门结构。
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公开(公告)号：US06271541B1
公开(公告)日：2001-08-07
申请号：US09476780
申请日：1999-12-30
申请人： Yasuo Yamaguchi , Hidekazu Yamamoto
发明人： Yasuo Yamaguchi , Hidekazu Yamamoto
IPC分类号： H01L2976
摘要： A semiconductor device is provided which is capable of removing the heavy metal impurity in a SOI layer by gettering, and realizing an improvement in breakdown voltage and reliability. The semiconductor device comprises polysilicon regions functioning as a gettering site, which are selectively formed in a buried fashion, such as to make no contact with a gate insulating film and an element isolation insulating film, in a main surface of part of a SOI layer where a drain region and a source region are disposed; and contact holes being filled with polysilicon plug functioning as a gettering site, and extending through an interlayer insulating film between an upper surface of the interlayer insulating film and an upper surface of the polysilicon regions.
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公开(公告)号：US20090267191A1
公开(公告)日：2009-10-29
申请号：US12159787
申请日：2006-02-24
申请人： Tadaharu Minato , Hidekazu Yamamoto
发明人： Tadaharu Minato , Hidekazu Yamamoto
IPC分类号： H01L29/34 , H01L21/322 , H01L21/78
CPC分类号： H01L21/3221 , H01L29/66348 , H01L29/7397
摘要： A device and a device manufacturing process. First, a gettering layer is formed on the bottom surface of a silicon substrate. Gates having a MOS structure are then formed on the principal surface of the silicon substrate, and the gettering layer is removed. According to this manufacturing method, the formation of the gates having a MOS structure is performed such that the gettering layer getters dissolved oxygen present in the silicon substrate. This reduces the concentration of dissolved oxygen in the silicon substrate, resulting in improved device characteristics.
摘要翻译： 一种设备和设备制造过程。 首先，在硅衬底的底面上形成吸气层。 然后在硅衬底的主表面上形成具有MOS结构的栅极，除去吸杂层。 根据该制造方法，进行具有MOS结构的栅极的形成，使得吸杂层吸收存在于硅衬底中的溶解氧。 这降低了硅衬底中溶解氧的浓度，从而改善了器件特性。
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公开(公告)号：US20070072074A1
公开(公告)日：2007-03-29
申请号：US11527608
申请日：2006-09-27
申请人： Hidekazu Yamamoto , Keiji Saisho
发明人： Hidekazu Yamamoto , Keiji Saisho
CPC分类号： H01M4/134 , H01M4/0426 , H01M10/0567 , H01M10/0568 , H01M10/0569
摘要： A non-aqueous electrolyte secondary battery using silicon as negative electrode active material and containing fluoroethylene carbonate in a non-aqueous electrolyte is provided that minimizes gas generation during storage in a charged state and improves charge-discharge cycle performance. The non-aqueous electrolyte secondary battery is provided with a negative electrode containing silicon as a negative electrode active material, a positive electrode, and a non-aqueous electrolyte containing electrolyte salts and a solvent. The non-aqueous electrolyte contains fluoroethylene carbonate, and the electrolyte salts include LiBF4 and another electrolyte salt that is less consumed relative to LiBF4 during charge-discharge cycling.
摘要翻译： 提供了一种使用硅作为负极活性物质并在非水电解质中含有氟代碳酸亚乙酯的非水电解质二次电池，其使得在充电状态下储存期间的气体产生最小化并且改善了充放电循环性能。 该非水电解质二次电池设置有含有作为负极活性物质的硅的负极，正极和含有电解质盐和溶剂的非水电解质。 非水电解质含有氟代碳酸亚乙酯，并且电解质盐包括LiBF 4+和在充放电循环期间相对于LiBF 4 S消耗的另一种电解质盐。
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公开(公告)号：US06252294B1
公开(公告)日：2001-06-26
申请号：US09438578
申请日：1999-11-12
IPC分类号： H01L2701
CPC分类号： H01L21/84 , H01L23/26 , H01L27/1203 , H01L2924/0002 , Y10S257/903 , Y10S257/913 , H01L2924/00
摘要： A semiconductor device and a semiconductor storage device having an SOI structure and being enable sufficient gettering performance without imposing limitations on the freedom of design of an LSI circuit. A semiconductor device includes a semiconductor wafer of SOI structure which has a insulation layer and a silicon layer provided thereon, wherein the semiconductor wafer includes a plurality of element fabrication regions where semiconductor elements are fabricated, and a cutting region provided between the element fabrication regions. Gettering sites are formed in the cutting region by means of embedding a gettering member into grooves of predetermined depth.
摘要翻译： 具有SOI结构的半导体器件和半导体存储器件，并且能够实现充分的吸杂性能，而不会对LSI电路的设计自由度施加限制。 半导体器件包括SOI结构的半导体晶片，其具有绝缘层和设置在其上的硅层，其中半导体晶片包括多个制造半导体元件的元件制造区域和设置在元件制造区域之间的切割区域。 通过将吸气构件嵌入到预定深度的凹槽中，在切割区域中形成吸气部位。
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公开(公告)号：US5539461A
公开(公告)日：1996-07-23
申请号：US216535
申请日：1994-03-23
申请人： Fumihiko Andoh , Kazuhisa Taketoshi , Katsu Tanaka , Masao Yamawaki , Hidekazu Yamamoto , Hiroshi Kawashima , Naofumi Murata
发明人： Fumihiko Andoh , Kazuhisa Taketoshi , Katsu Tanaka , Masao Yamawaki , Hidekazu Yamamoto , Hiroshi Kawashima , Naofumi Murata
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/351 , H04N5/357 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N3/12 , H04N3/14 , H04N9/07
CPC分类号： H01L27/14665 , H01L27/14643 , H04N3/1512
摘要： An image sensor includes a photoelectric conversion element, a first MOS transistor having having a gate connected to the photoelectric conversion element, a second MOS transistor connected in series with the first transistor, and a third MOS transistor connected in series with the photoelectric conversion element, wherein the threshold voltage of the third MOS transistor is set higher than that of the second MOS transistor. In one embodiment, each of the pixels included in a second group of rows includes a photoelectric conversion element but without the first, second and third MOS transistors. A fourth MOS transistor connects a photoelectric conversion element of the second group to a photoelectric conversion element of a first group, the photoelectric conversion elements of the first group being part of pixels which contain first, second and third MOS transistors.
摘要翻译： 图像传感器包括光电转换元件，具有连接到光电转换元件的栅极的第一MOS晶体管，与第一晶体管串联连接的第二MOS晶体管和与光电转换元件串联连接的第三MOS晶体管， 其中所述第三MOS晶体管的阈值电压被设定为高于所述第二MOS晶体管的阈值电压。 在一个实施例中，包括在第二组行中的每个像素包括光电转换元件，但不包括第一，第二和第三MOS晶体管。 第四MOS晶体管将第二组的光电转换元件连接到第一组的光电转换元件，第一组的光电转换元件是包含第一，第二和第三MOS晶体管的像素的一部分。
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公开(公告)号：US5371397A
公开(公告)日：1994-12-06
申请号：US18146
申请日：1993-02-16
CPC分类号： H01L27/14806 , H01L27/14627 , H01L27/14831
摘要： A solid-state imaging device includes a semiconductor substrate in which an element part including a plurality of light responsive elements for generating charge carriers in response to incident light and a transfer part for transferring the charge carriers generated in each light responsive element are incorporated; a lens layer is disposed on the element part so that incident light is collected in the light responsive elements; and a light beam dispersion layer is disposed between the lens layer and the element part and includes two light transmissive layers having different refractive indices for dispersing light collected by the lens layer so that collected light entering respective light responsive elements is closer to a parallel beam than the incident light. By suppressing broadening of incident light in the semiconductor substrate at the light responsive elements, fewer charge carriers enter the CCD channel region and smear is reduced.
摘要翻译： 固态成像装置包括：半导体衬底，其中包含元件部分，其包括响应于入射光而产生电荷载流子的多个光响应元件和用于转移在每个光响应元件中产生的电荷载流子的转移部分; 透镜层设置在元件部分上，使得入射光被收集在光响应元件中; 并且光束分散层设置在透镜层和元件部分之间，并且包括具有不同折射率的两个透光层，用于分散由透镜层收集的光，使得进入各个光响应元件的收集光更接近平行光束 事件光。 通过抑制在光响应元件处的半导体衬底中的入射光的增宽，较少的电荷载流子进入CCD通道区域并且减少了涂片。
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公开(公告)号：US5311038A
公开(公告)日：1994-05-10
申请号：US63948
申请日：1993-05-20
IPC分类号： H01L27/146 , H01L31/04 , H01L31/10 , H01L27/14
CPC分类号： H01L27/14665 , Y02E10/549
摘要： An improved photoelectric converter with reduced dark current includes a first electrode on a substrate covered by a semiconductor layer for photoelectric conversion. A second electrode is disposed on the semiconductor layer. An electron injection preventive layer is inserted between the semiconductor layer and the second electrode for preventing electrons from being injected from the second electrode into the semiconductor layer. The electron injection preventive layer is formed of a material satisfying the inequality:.phi..sub.M -x.sub.2 .gtoreq.Eg.sub.1where the work function of the second electrode is .phi..sub.M, the electron affinity of the electron injection preventive layer is x.sub.2, and the band gap energy of the semiconductor layer is Eg.sub.1.
摘要翻译： 具有降低的暗电流的改进的光电转换器包括由用于光电转换的半导体层覆盖的衬底上的第一电极。 第二电极设置在半导体层上。 在半导体层和第二电极之间插入电子注入防止层，以防止电子从第二电极注入半导体层。 电子注入防止层由满足以下不等式的材料形成：其中第二电极的功函数为phi M，电子注入防止层的电子亲和力为x2，带隙 半导体层的能量为Eg1。
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公开(公告)号：US20120219868A1
公开(公告)日：2012-08-30
申请号：US13463001
申请日：2012-05-03
IPC分类号： H01M10/056
CPC分类号： H01M10/0525 , H01M4/13 , H01M10/0566 , H01M10/0567
摘要： The objective of the present invention is to prevent deterioration and expanding of anode active material and to improve charge-discharge cycle characteristics in a non-aqueous electrolyte secondary battery comprising an anode of which current collector has thereon a thin layer of an anode active material containing a metal. To solve this problem, in a non-aqueous electrolyte secondary battery wherein a thin layer of anode active material containing a metal which absorbs and discharges lithium is formed on a current collector and the thin layer of the anode active material is divided into columns by a gap formed along the thickness thereof, a compound represented by the following formula is contained in the non-aqueous electrolyte. A-N═C═O In the above formula, A represents an element or a group other than hydrogen.
摘要翻译： 本发明的目的是为了防止负极活性物质的劣化和膨胀，并且提高非水电解质二次电池的充放电循环特性，该非水电解质二次电池包括集电体上具有负极活性物质的薄层的阳极， 金属。 为了解决这个问题，在非水电解质二次电池中，在集电体上形成含有吸收和放出锂的金属的负极活性物质的薄层，阳极活性物质的薄层被分成列 沿其厚度形成的间隙由下式表示的化合物包含在非水电解质中。 A-N = C = O在上式中，A表示氢以外的元素或基团。
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公开(公告)号：US20120115043A1
公开(公告)日：2012-05-10
申请号：US13292574
申请日：2011-11-09
IPC分类号： H01M10/056 , H01M4/505
CPC分类号： H01M4/505 , H01M4/386 , H01M4/483 , H01M4/525 , H01M10/0525 , H01M10/0569 , H01M10/4235 , H01M2004/021 , H01M2300/0034 , H01M2300/0037
摘要： A nonaqueous electrolyte secondary battery includes a positive electrode containing a positive electrode active material, a negative electrode containing a negative electrode active material, and a nonaqueous electrolyte solution containing a nonaqueous solvent. The positive electrode active material contains a lithium-containing transition metal oxide represented by general formula (1), Li1+xMnyMzO2 (where x, y, and z satisfy 0
摘要翻译： 非水电解质二次电池包括含有正极活性物质的正极，含有负极活性物质的负极和含有非水溶剂的非水电解液。 正极活性物质含有由通式（1）表示的含锂过渡金属氧化物Li1 + xMnyMzO2（其中x，y和z满足0
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