公开(公告)号：US07436140B2

公开(公告)日：2008-10-14

申请号：US11455639

申请日：2006-06-20

申请人： Masanori Takaji ,  Tatsuya Nakazawa ,  Yutaka Yamada ,  Toshihiko Matsuzawa ,  Satoshi Ishizuka

发明人： Masanori Takaji ,  Tatsuya Nakazawa ,  Yutaka Yamada ,  Toshihiko Matsuzawa ,  Satoshi Ishizuka

IPC分类号： H02P1/04 ,  G05B23/02

CPC分类号： F16M11/22 ,  F16M11/08 ,  F16M11/18 ,  F16M2200/08

摘要： A self-supporting stand for a thin display device is to be controlled so that the display device faces in a preset screen direction in a one-touch manner. A function of constantly recognizing the screen direction of the display device and detecting its own direction by detecting a resistance value of a resistance volume such as a variable resistor installed in an electric screen direction changing mechanism, and a control unit which reproduces a preset screen direction no matter in which direction the screen faces currently, are combined with each other.

摘要翻译： 为了使显示装置以一触式的方式面向预设的屏幕方向，需要控制薄型显示装置的自支撑架。 通过检测安装在电动屏幕方向改变机构中的可变电阻器等电阻容量的电阻值来不断地识别显示装置的屏幕方向并检测其自己的方向的功能，以及再现预设屏幕方向的控制单元 无论屏幕面向哪个方向，彼此组合。

公开(公告)号：US07160820B2

公开(公告)日：2007-01-09

申请号：US10478063

申请日：2002-05-15

申请人： Toshihiro Suga ,  Yasuji Yamada ,  Toshihiko Maeda ,  Seok Beom Kim ,  Haruhiko Kurosaki ,  Yutaka Yamada ,  Izumi Hirabayashi ,  Yasuhiro Iijima ,  Tomonori Watanabe ,  Hisashi Yoshino ,  Koji Muranaka

发明人： Toshihiro Suga ,  Yasuji Yamada ,  Toshihiko Maeda ,  Seok Beom Kim ,  Haruhiko Kurosaki ,  Yutaka Yamada ,  Izumi Hirabayashi ,  Yasuhiro Iijima ,  Tomonori Watanabe ,  Hisashi Yoshino ,  Koji Muranaka

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C30B19/02 ,  C30B29/22 ,  C30B29/225

摘要： There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaF2 system or a BaO—CuO—Ag—BaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.

摘要翻译： 提供了通过使用液相法在基板上从溶液相形成Y123型氧化物晶体膜来制备氧化物晶体膜和基板的复合材料的方法，其中诸如氧化物晶体膜的破裂， 氧化物晶体膜与基板的分离以及基板和溶液之间的反应层的显影可以最小化。 用于形成溶液相的溶剂使用BaO-CuO-BaF 2系统或BaO-CuO-Ag-BaF 2系统，并且当具有种子的基底 与表面接合的结晶膜与溶液接触以在基板上形成（生长）氧化物晶体膜，将溶液的温度控制在不高于850℃的温度。

公开(公告)号：US20060199741A1

公开(公告)日：2006-09-07

申请号：US11416237

申请日：2006-05-03

申请人： Takeshi Araki ,  Toshiharu Niwa ,  Takemi Muroga ,  Yutaka Yamada ,  Izumi Hirabayashi

发明人： Takeshi Araki ,  Toshiharu Niwa ,  Takemi Muroga ,  Yutaka Yamada ,  Izumi Hirabayashi

IPC分类号： H01L39/24

CPC分类号： H01L39/2425

摘要： There is provided is a method of manufacturing a superconductor layer, including preparing a coating solution by dissolving trifluoroacetates of at least one metal selected from the group consisting of yttrium and lanthanoids, barium, and copper in a solvent, coating a main surface of a substrate with the coating solution to form a coating film, subjecting the coating film to a calcining process in an atmosphere containing oxygen, and subjecting the coating film after the calcining process to a firing process in an atmosphere containing water vapor at a temperature higher than that at the calcining process. The calcining process is carried out such that the coating film after the calcining process and before the firing process have an average CuO particle diameter equal to or less than 25 nm.

公开(公告)号：US20060033054A1

公开(公告)日：2006-02-16

申请号：US11253558

申请日：2005-10-20

申请人： Yutaka Yamada

发明人： Yutaka Yamada

IPC分类号： G01J3/10

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68354 ,  Y10S438/977 ,  Y10T29/41 ,  Y10T29/5102 ,  Y10T29/5193

摘要： A method of fabricating a semiconductor device includes the steps of, after sawing a semiconductor substrate into individual semiconductor chips in a state that the semiconductor substrate is covered by an adhesive tape, applying a dry gas to the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, applying an infrared radiation to the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, and curing the adhesive layer on the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, by irradiating a ultraviolet radiation to the adhesive tape, wherein the step of applying the dry gas, the step of applying the infrared radiation and the said step of curing the adhesive layer are conducted substantially simultaneously.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底被粘合带覆盖的状态下将半导体衬底切割成单独的半导体芯片之后，在粘合带的状态下将干燥气体施加到粘合带上 在其上承载半导体芯片，在粘合带上携带有半导体芯片的状态下将红外线辐射施加到粘合带上，并且在粘合带上携带有半导体芯片的状态下固化胶带上的粘合剂层，通过 将紫外线辐射照射到胶带上，其中施加干燥气体的步骤，施加红外辐射的步骤和固化粘合剂层的所述步骤基本上同时进行。

公开(公告)号：US06971456B2

公开(公告)日：2005-12-06

申请号：US10657165

申请日：2003-09-09

申请人： Yutaka Yamada ,  Hiroshi Iwano

发明人： Yutaka Yamada ,  Hiroshi Iwano

IPC分类号： B25F5/00 ,  H02K7/116 ,  H02K7/14 ,  H02K9/06 ,  E21B3/00

CPC分类号： H02K7/145 ,  B25F5/008 ,  H02K7/116 ,  H02K9/06

摘要： An electric power tool incorporating a single fan that provides efficient cooling of the motor and transmission while reducing the cost and size of the power tool. The power tool includes a speed reduction transmission provided within a housing between the motor and a chuck which is located at the front end of the power tool. The rotation of the fan cools the motor and the transmission by drawing in external air from intake ports formed in the housing, and collectively exhausts the warmed cooling air through exhaust ports formed in the housing. The power tool includes a fan, located between the motor and the transmission, that is constructed to draw in two separate streams of cooling air from air intake ports located adjacent to the motor and the transmission, and to exhaust used cooling air through exhaust ports located adjacent to the fan.

公开(公告)号：US20050119363A1

公开(公告)日：2005-06-02

申请号：US10510717

申请日：2003-04-25

申请人： Yutaka Yamada ,  Hisao Yamaguchi ,  Osamu Oshima

发明人： Yutaka Yamada ,  Hisao Yamaguchi ,  Osamu Oshima

IPC分类号： C09D11/10 ,  C08K3/00

CPC分类号： C09D11/36 ,  C09D11/101 ,  C09D11/324 ,  Y10T428/2991 ,  Y10T428/2998

摘要： An ink composition for ultraviolet curable ink-jet recording including carbon black, a photopolymerizable compound and a photopolymerization initiator, comprising at least one selected from the group consisting of non-metallic phthalocyanine sulfonic acids, metal phthalocyanine sulfonic acids in which the central metal is Cu, Fe, Ni, Co, or Ti, and metal salts thereof, and a polymer dispersant containing a basic functional group. The photopolymerizable compound may dissolve the polymer dispersant.

摘要翻译： 一种含有炭黑，光聚合性化合物和光聚合引发剂的紫外线固化型喷墨记录用油墨组合物，其含有选自非金属酞菁磺酸，中心金属为Cu的金属酞菁磺酸中的至少一种 ，Fe，Ni，Co或Ti及其金属盐，以及含有碱性官能团的高分子分散剂。 光聚合化合物可溶解聚合物分散剂。

公开(公告)号：US06297131B1

公开(公告)日：2001-10-02

申请号：US09357657

申请日：1999-07-20

申请人： Yutaka Yamada ,  Takanori Muramoto

发明人： Yutaka Yamada ,  Takanori Muramoto

IPC分类号： H01L2146

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/6834

摘要： A yield rate and a throughput of a semiconductor device can be increased when a large-diameter wafer having a reduced thickness is used. The semiconductor device is produced by using a wafer having a front surface on which circuits are formed and a back surface opposite to the front surface. A protective tape is applied to the front surface of the wafer. The wafer is mounted to a dicing tape via the protective tape, the dicing tape being spread on a wafer frame having a size larger than a diameter of the wafer. The back surface of the wafer is ground while the wafer is mounted on the dicing tape. The wafer is diced, after the wafer is ground, while the wafer is mounted on the dicing tape so as to form the semiconductor device by full-dicing.

摘要翻译： 当使用具有减小的厚度的大直径晶片时，可以提高半导体器件的产率和产量。 半导体器件通过使用具有形成电路的前表面的晶片和与前表面相对的后表面来制造。 将保护带施加到晶片的前表面。 通过保护带将晶片安装到切割带上，切割带扩展在具有大于晶片直径的尺寸的晶片框架上。 当晶片安装在切割带上时，晶片的背面被研磨。 在晶片被研磨之后，晶片被切割，同时晶片安装在切割带上，以便通过全切割形成半导体器件。

公开(公告)号：US06170147B2

公开(公告)日：2001-01-09

申请号：US08463738

申请日：1995-06-05

申请人： Yutaka Yamada ,  Satoru Murase ,  Hisashi Yoshino ,  Noburu Fukushima ,  Hiromi Niu ,  Shigeo Nakayama ,  Misao Koizumi

发明人： Yutaka Yamada ,  Satoru Murase ,  Hisashi Yoshino ,  Noburu Fukushima ,  Hiromi Niu ,  Shigeo Nakayama ,  Misao Koizumi

IPC分类号： H01L3924

CPC分类号： C04B35/45 ,  C04B35/4504 ,  H01L39/143 ,  H01L39/248 ,  Y10S428/93 ,  Y10S505/704 ,  Y10S505/74 ,  Y10T29/49014 ,  Y10T428/2929

摘要： A starting material which is converted to a continuous body of an oxide superconductor by a heat treatment is filled in a tubular Ag sheath member. The diameter of the filled member is reduced by extrusion to form a wire. The wire is subjected to a heat treatment so that the starting material inside the sheath member is converted to a continuous body of an oxide superconductor. A superconducting wire constituted by the sheath member and the oxide superconductor filled inside the sheath member is obtained. A superconducting coil can be obtained by winding the superconducting wire.

摘要翻译： 通过热处理转化为氧化物超导体的连续体的起始材料填充在管状Ag护套构件中。 填充构件的直径通过挤压而减小以形成线。 对线材进行热处理，使得护套部件内的原料转变成氧化物超导体的连续体。 获得由护套构件和填充在护套构件内的氧化物超导体构成的超导线。 可以通过缠绕超导线来获得超导线圈。

公开(公告)号：US6038776A

公开(公告)日：2000-03-21

申请号：US779610

申请日：1997-01-07

申请人： Yoshikuni Yamada ,  Shinya Nozawa ,  Yutaka Yamada

发明人： Yoshikuni Yamada ,  Shinya Nozawa ,  Yutaka Yamada

IPC分类号： B41J11/02 ,  B41J11/00 ,  B43L13/00

CPC分类号： B41J11/0085 ,  B43L13/00

摘要： An operator separates pressure rollers 14, 16 from the corresponding drive rollers 12 for a predetermined distance prior to his drawing work on the paper and allows the paper 18 to be inserted between the drive rollers 12 and the pressure rollers 14, 16 from the front of the platen 2. An optical sensor 28 detects the paper 18. A controller drives a fan after a lapse of a predetermined time to operate a vacuum power in a vacuum chamber 4. Thereafter, the paper 18 on the platen 2 continues to be held on the platen 2 by the vacuum power. In this condition, the operator sets the paper to a mark 20 drawn on the platen 2 which indicates a set position of the paper to adjust the position of the paper 18. When the operator completes the positioning of the paper 18, he manipulates the lever to lift down the pressure rollers. Thereafter, the pressure rollers 14, 16 contact the drive rollers 12 over the paper 18 resiliently by a predetermined pressure, and the paper 18 is sandwiched between the drive rollers 12 and the pressure rollers 14, 16 on the platen 2. Finally, the controller stops the drive of a fan 30 and the arrangement of the paper is completed.

摘要翻译： 操作人员将压力辊14,16与相应的驱动辊12隔开预定距离，然后在纸张上进行拉丝作业之前，将纸张18从前面插入驱动辊12和压力辊14,16之间 光盘传感器28检测纸张18.控制器经过预定时间后驱动风扇以在真空室4中操作真空电源。此后，压板2上的纸张18继续保持在 压板2通过真空动力。 在这种情况下，操作者将纸张设置在平板2上绘制的标记20，该标记表示纸张的设定位置，以调整纸张18的位置。当操作者完成纸张18的定位时，他操纵杆 抬起压辊。 此后，压力辊14,16以预定的压力弹性地接触纸张18上的驱动辊12，并且将纸张18夹在驱动辊12和压板2上的压力辊14,16之间。最后，控制器 停止风扇30的驱动并完成纸张的布置。

公开(公告)号：US5981361A

公开(公告)日：1999-11-09

申请号：US927209

申请日：1997-09-11

申请人： Yutaka Yamada

发明人： Yutaka Yamada

IPC分类号： H01L21/301 ,  H01L21/78

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68354 ,  Y10S438/977 ,  Y10T29/41 ,  Y10T29/5102 ,  Y10T29/5193

摘要： A method of fabricating a semiconductor device includes the steps of, after sawing a semiconductor substrate into individual semiconductor chips in a state that the semiconductor substrate is covered by an adhesive tape, applying a dry gas to the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, applying an infrared radiation to the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, and curing the adhesive layer on the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, by irradiating a ultraviolet radiation to the adhesive tape, wherein the step of applying the dry gas, the step of applying the infrared radiation and the said step of curing the adhesive layer are conducted substantially simultaneously.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底被粘合带覆盖的状态下将半导体衬底切割成单独的半导体芯片之后，在粘合带的状态下将干燥气体施加到粘合带上 在其上承载半导体芯片，在粘合带上携带有半导体芯片的状态下将红外线辐射施加到粘合带上，并且在粘合带上携带有半导体芯片的状态下固化胶带上的粘合剂层，通过 将紫外线辐射照射到胶带上，其中施加干燥气体的步骤，施加红外辐射的步骤和固化粘合剂层的所述步骤基本上同时进行。