公开(公告)号：US06315643B1

公开(公告)日：2001-11-13

申请号：US09344495

申请日：1999-06-25

申请人： Hirokuni Hiyama ,  Seiyo Maekawa ,  Yutaka Wada

发明人： Hirokuni Hiyama ,  Seiyo Maekawa ,  Yutaka Wada

IPC分类号： B24B100

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A polishing apparatus including a turntable having an upper polishing surface, at least one carrier for carrying an article with a surface to be polished in such a manner that the surface is engaged with the upper polishing surface of the turntable, and at least one slurry supply nozzle provided for the carrier and adapted to supply a slurry on the polishing surface of the turntable at a predetermined slurry supply point upstream of a line connecting the center axes of the turntable and the carrier in the direction of rotation of the turntable while the turntable and the carrier are rotated around their respective center axes with the surface of the article kept in engagement with the polishing surface. The nozzle is preferably positioned such that an angle is formed between the line connecting the center axis of the turntable and the center axis of the carrier and a line connecting the center axis of the carrier and the predetermined slurry supply point is in the range of from 5 degrees to 40 degrees.

摘要翻译： 一种抛光装置，包括具有上抛光表面的转台，至少一个载体，用于承载具有待抛光表面的制品，使得该表面与转台的上抛光表面接合，以及至少一个浆料供应 喷嘴，其设置用于载体，并且适于在转台的旋转方向上连接转台和载体的中心轴线的上游的预定浆料供应点处在转台的抛光表面上提供浆料，同时转盘和 载体围绕其各自的中心轴线旋转，同时制品的表面保持与抛光表面接合。 喷嘴优选地定位成使得在连接转盘的中心轴线和载体的中心轴线的线与连接载体的中心轴线与预定浆料供应点之间形成的角度在从 5度至40度。

公开(公告)号：US5888126A

公开(公告)日：1999-03-30

申请号：US590836

申请日：1996-01-24

申请人： Masayoshi Hirose ,  Yoshimi Sasaki ,  Akira Ogata ,  Seiji Ishikawa ,  Tamami Takahashi ,  Hirokuni Hiyama ,  Yutaka Wada

发明人： Masayoshi Hirose ,  Yoshimi Sasaki ,  Akira Ogata ,  Seiji Ishikawa ,  Tamami Takahashi ,  Hirokuni Hiyama ,  Yutaka Wada

IPC分类号： B24B37/005 ,  B24D13/14 ,  H01L21/304 ,  B24B29/02

CPC分类号： B24B37/26 ,  B24B37/042 ,  B24B37/24

摘要： A polishing apparatus includes a turntable with an abrasive cloth mounted on an upper surface thereof, and a top ring disposed above the turntable for supporting a workpiece to be polished and pressing the workpiece against the abrasive cloth under a predetermined pressure. The turntable and the top ring are movable relatively to each other to polish a surface of the workpiece supported by the top ring with the abrasive cloth. The abrasive cloth has a projecting region on a surface thereof for more intensive contact with the workpiece than other surface regions of the abrasive cloth. The projecting region has a smaller dimension in a radial direction of the turntable than a diameter of the workpiece when the projecting region is held in contact with the workpiece. A position of the projecting region is determined on the basis of an area in which the projecting region acts on the workpiece.

摘要翻译： 抛光装置包括：转盘，其具有安装在其上表面上的研磨布;以及顶环，其设置在所述转台上方，用于支撑待抛光的工件，并在预定压力下将所述工件压靠所述研磨布。 转盘和顶环彼此相对移动，用研磨布抛光由顶环支撑的工件的表面。 研磨布在其表面上具有突出区域，用于与研磨布的其它表面区域更加紧密地接触工件。 当突出区域与工件保持接触时，突出区域在转台的径向上具有比工件的直径更小的尺寸。 基于突出区域作用在工件上的区域来确定突出区域的位置。

公开(公告)号：US5882244A

公开(公告)日：1999-03-16

申请号：US967767

申请日：1997-11-10

申请人： Hirokuni Hiyama ,  Yutaka Wada ,  Tamami Takahashi

发明人： Hirokuni Hiyama ,  Yutaka Wada ,  Tamami Takahashi

IPC分类号： B24B37/00 ,  B24B37/013 ,  B24B37/015 ,  B24B49/14 ,  B24B49/00

CPC分类号： B24B37/015 ,  B24B49/14

摘要： A polishing apparatus makes it possible to accurately detect the temperature of a workpiece during polishing and to perform polishing end point determination on the basis of this detected temperature. The polishing apparatus polishes irregularities in a surface of a workpiece such as for example a semiconductor wafer to a flat and mirror-like finish. A top ring holding a semiconductor wafer is provided with a temperature sensor. Frictional heat generated in the semiconductor wafer by polishing is detected by the temperature sensor, and a polishing end point is determined on the basis of the detected temperature.

摘要翻译： 抛光装置使得可以精确地检测抛光期间工件的温度，并且基于该检测温度进行抛光终点确定。 抛光装置将诸如半导体晶片的工件的表面中的凹凸抛光到平坦的和镜面状的光洁度。 保持半导体晶片的顶环设置有温度传感器。 由温度传感器检测在半导体晶片中通过研磨产生的摩擦热，并且基于检测到的温度来确定研磨终点。

公开(公告)号：US06942548B2

公开(公告)日：2005-09-13

申请号：US09916305

申请日：2001-07-30

申请人： Yutaka Wada ,  Hirokuni Hiyama ,  Kazuto Hirokawa ,  Hisanori Matsuo

发明人： Yutaka Wada ,  Hirokuni Hiyama ,  Kazuto Hirokawa ,  Hisanori Matsuo

IPC分类号： B24B1/00 ,  B24B37/04 ,  B24B37/24 ,  B24B53/017 ,  B24D3/32 ,  H01L21/304

CPC分类号： B24B37/245 ,  B24B37/042 ,  B24B53/017 ,  B24D3/32 ,  H01L21/31053 ,  H01L21/3212

摘要： An abrading plate has a self-stopping capability such that when an object, such as a semiconductor wafer having a device structure that includes raised regions and depressed regions fabricated on the surface, is being polished, the raised regions are removed and polishing stops automatically. The abrading plate, to produce a flat and mirror polished surface on the an object, has abrasive particles having a chemical purity of not less than 90% and a particle size of not more than two micrometers, a binder material, and a given volume of porosity. A ratio of the abrasive particles and the binder material is not less than 1:0.5 by volume, and proportions of abrasive particles, a binder material and porosity are, respectively, not less than 10%, not more than 60% and 10-40% by volume. A surface is polished for a given duration with a liquid not containing abrasive particles so as to eliminate the raised regions and to obtain a flat surface. Additional surface removal is performed by supplying abrasive particles to the polishing interface to remove surface material uniformly from the entire surface.

摘要翻译： 研磨板具有自停能力，使得当正在抛光诸如具有包括凸起区域的器件结构和在表面上制造的凹陷区域的半导体晶片的物体时，抛光凸起区域并且抛光自动停止。 研磨板在物体上产生平坦且镜面抛光的表面，具有化学纯度不小于90％，粒度不大于2微米的磨料颗粒，粘合剂材料和给定体积的 孔隙度。 研磨粒子和粘合剂材料的比例为1〜0.5体积％以上，研磨粒子，粘合剂材料和孔隙率的比例分别为10％以上，60％以下，10〜40％ 按体积计。 表面用不含磨料颗粒的液体抛光给定持续时间，以消除凸起区域并获得平坦表面。 通过将磨料颗粒提供给抛光界面以从整个表面均匀地去除表面材料来进行附加的表面去除。

公开(公告)号：US06752692B2

公开(公告)日：2004-06-22

申请号：US09932987

申请日：2001-08-21

申请人： Yutaka Wada ,  Hirokuni Hiyama ,  Norio Kimura

发明人： Yutaka Wada ,  Hirokuni Hiyama ,  Norio Kimura

IPC分类号： B24B4900

CPC分类号： B24B37/345 ,  B08B3/08 ,  B24B53/017 ,  H01L21/67051 ,  Y10S134/902

摘要： A method is suitable for cleaning substrates, after polishing, that require a high degree of cleanliness, such as semiconductor wafers, glass substrates, or liquid crystal displays. The method includes polishing a substrate using an abrasive liquid containing abrasive particles, and cleaning a polished surface of the substrate by supplying a cleaning liquid having substantially the same pH as the abrasive liquid or similar pH to the abrasive liquid so that a pH of the abrasive liquid attached to the polished surface of the substrate is not rapidly changed.

摘要翻译： 一种方法适用于清洗需要高度清洁度的基板，如半导体晶片，玻璃基板或液晶显示器。 该方法包括使用含磨料颗粒的磨料液研磨衬底，以及通过向研磨液中提供与磨料液体或类似pH具有基本上相同pH值的清洗液体来清洗衬底的抛光表面，使磨料的pH值 附着于基板抛光面的液体不会迅速变化。

公开(公告)号：US06626739B1

公开(公告)日：2003-09-30

申请号：US09640981

申请日：2000-08-18

申请人： Yutaka Wada ,  Hirokuni Hiyama ,  Kazuto Hirokawa ,  Hisanori Matsuo

发明人： Yutaka Wada ,  Hirokuni Hiyama ,  Kazuto Hirokawa ,  Hisanori Matsuo

IPC分类号： B24B500

CPC分类号： B24B53/017

摘要： A method is provided for polishing a device wafer, which has projections and depressions formed on a surface thereof, with the use of an abrading plate. The method comprises polishing the device wafer while supplying a surface active agent and/or while dressing a surface of the abrading plate. This method for polishing the device wafer can always exhibit a self-stop function, without being restricted by the composition of the abrading plate, and without being restricted by the type of the substrate.

摘要翻译： 提供了一种用于研磨具有在其表面上形成有凹凸的器件晶片的方法。 该方法包括在提供表面活性剂的同时抛光装置晶片和/或在修整研磨板的表面时。 用于抛光装置晶片的这种方法可以始终呈现自动停止功能，而不受研磨板的组成的限制，并且不受基板的类型的限制。

公开(公告)号：US06595831B1

公开(公告)日：2003-07-22

申请号：US09560562

申请日：2000-04-28

申请人： Kazuto Hirokawa ,  Hirokuni Hiyama ,  Yutaka Wada ,  Hisanori Matsuo ,  Noburu Shimizu

发明人： Kazuto Hirokawa ,  Hirokuni Hiyama ,  Yutaka Wada ,  Hisanori Matsuo ,  Noburu Shimizu

IPC分类号： B24B100

CPC分类号： H01L21/67161 ,  B08B1/04 ,  B24B37/042 ,  B24B37/245 ,  H01L21/67219 ,  H01L21/67745

摘要： A polishing method and apparatus can concurrently establish a stable removal rate, a small step height reduction rate, and reduction of detects on the polished surface for various kinds of polished subjects, while providing less environmental problems and requiring less processing costs. The method for polishing a surface of a semiconductor device wafer comprises first polishing a surface of the semiconductor wafer by a first fixed abrasive polishing method; and finish polishing the polished surface of the semiconductor wafer by a second fixed abrasive polishing method different from the first fixed abrasive polishing method.

摘要翻译： 抛光方法和装置可以同时建立各种抛光对象的抛光表面的稳定的去除率，小的台阶降低率和减少对抛光表面的检测，同时提供较少的环境问题并且需要更少的处理成本。 用于抛光半导体器件晶片的表面的方法包括：通过第一固定研磨抛光方法对半导体晶片的表面进行抛光; 并且通过与第一固定研磨抛光方法不同的第二固定研磨抛光方法来对半导体晶片的抛光表面进行抛光。

公开(公告)号：US06413155B1

公开(公告)日：2002-07-02

申请号：US09758174

申请日：2001-01-12

申请人： Hisanori Matsuo ,  Hirokuni Hiyama ,  Yutaka Wada ,  Kazuto Hirokawa

发明人： Hisanori Matsuo ,  Hirokuni Hiyama ,  Yutaka Wada ,  Kazuto Hirokawa

IPC分类号： B24B100

摘要： A polishing apparatus polishes a workpiece to a planar mirror finish stably, and is prevented from being vibrated while polishing is carried out. The polishing apparatus has a holding member for holding the workpiece, and a bearing supporting an outer circumferential surface of the holding member, for suppressing vibrations transmitted to the holder while the workpiece is being polished.

公开(公告)号：US06413149B1

公开(公告)日：2002-07-02

申请号：US09446764

申请日：1999-12-23

申请人： Yutaka Wada ,  Hirokuni Hiyama ,  Kazuto Hirokawa ,  Hisanori Matsuo

发明人： Yutaka Wada ,  Hirokuni Hiyama ,  Kazuto Hirokawa ,  Hisanori Matsuo

IPC分类号： B24B100

CPC分类号： B24B37/245 ,  B24B37/042 ,  B24B53/017 ,  B24D3/32 ,  H01L21/31053 ,  H01L21/3212

摘要： The present invention provides an abrading plate having self-stopping capability such that when an object, such as a semiconductor wafer having a device structure that includes raised regions and depressed regions fabricated on the surface, is being polished, the raised regions are removed and polishing stops automatically. A method of using the abrading plate is also provided. The present invention relates to an abrading plate that produces a flat and mirror polished surface on an object with an abrading plate comprised by abrasive particles having a chemical purity of not less than 90% and a particle size of not more than two micrometers; a binder material; and a given volume of porosity, wherein a ratio of the abrasive particles and the binder material is not less than 1:0.5 by volume, and proportions of abrasive particles, a binder material and porosity are, respectively, not less than 10%, not more than 60% and 10˜40 by volume. The method is provided for polishing an object having a device structure that includes raised regions and depressed regions fabricated on the surface according to the steps of polishing the surface for a given duration with a liquid not containing abrasive particles so as to eliminate the raised regions to obtain a flat surface, and performing additional surface removal by supplying abrasive particles to the polishing interface to remove surface material uniformly from the entire surface.

摘要翻译： 本发明提供了一种具有自停能力的研磨板，使得当正在抛光诸如具有包括凸起区域的器件结构的半导体晶片和在表面上制造的凹陷区域的物体被抛光时，去除和抛光凸起区域 自动停止 还提供了使用研磨板的方法。研磨板技术领域本发明涉及一种研磨板，其在物体上产生平坦且镜面抛光的表面，其中研磨板由化学纯度不小于90％的磨料颗粒和 粒径不超过2微米; 粘合剂材料; 和给定体积的孔隙率，其中磨料颗粒和粘合剂材料的比例不小于1:0.5（体积），磨料颗粒，粘合剂材料和孔隙率的比例分别不小于10％ 超过60％和10〜40体积。该方法用于抛光具有包括凸起区域和在表面上制造的凹陷区域的器件结构的物体，根据以下步骤：用 含有磨料颗粒以消除凸起区域以获得平坦表面，并且通过将磨料颗粒提供给抛光界面以从整个表面均匀地除去表面材料来进行额外的表面去除。

公开(公告)号：US06406364B1

公开(公告)日：2002-06-18

申请号：US09355895

申请日：1999-10-25

申请人： Norio Kimura ,  Hirokuni Hiyama ,  Yutaka Wada ,  Kiyotaka Kawashima ,  Manabu Tsujimura ,  Takayoshi Kawamoto

发明人： Norio Kimura ,  Hirokuni Hiyama ,  Yutaka Wada ,  Kiyotaka Kawashima ,  Manabu Tsujimura ,  Takayoshi Kawamoto

IPC分类号： B24B5700

CPC分类号： B24B37/04 ,  B24B57/02 ,  Y10S451/91

摘要： The object of the present invention is to provide a polishing apparatus that can supply a polishing solution having a non-varying distribution of abrading particles sizes at a steady rate. An apparatus (20) for delivering a polishing solution to a polishing apparatus (22) is disclosed. The apparatus (20) comprises: a solution passage for transporting the polishing solution; and an ultrasonic vibrator (72) being provided in at least one location of the solution passage.

摘要翻译： 本发明的目的是提供一种抛光装置，其能够以稳定的速度供给研磨粒子尺寸不变的抛光液。 公开了一种用于将抛光溶液输送到抛光装置（22）的装置（20）。 装置（20）包括：用于输送抛光溶液的溶液通道; 和超声波振动器（72）设置在溶液通道的至少一个位置。