公开(公告)号：US20050186767A1

公开(公告)日：2005-08-25

申请号：US11110933

申请日：2005-04-21

申请人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

发明人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

IPC分类号： H01L21/28 ,  C23C14/08 ,  C23C14/58 ,  C23C16/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/26 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8246 ,  H01L23/58 ,  H01L27/105 ,  H01L27/115 ,  H01L29/417 ,  H01L29/76 ,  H01L31/062

CPC分类号： H01L27/11502 ,  C23C14/08 ,  C23C14/5806 ,  H01L21/67115 ,  H01L27/11507 ,  H01L28/65

摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.

摘要翻译： 公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板 保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。

公开(公告)号：US20060017086A1

公开(公告)日：2006-01-26

申请号：US11223958

申请日：2005-09-13

申请人： Hiroyuki Kanaya ,  Iwao Kunishima ,  Koji Yamakawa ,  Tsuyoshi Iwamoto ,  Hiroshi Mochizuki ,  Yoshinori Kumura

发明人： Hiroyuki Kanaya ,  Iwao Kunishima ,  Koji Yamakawa ,  Tsuyoshi Iwamoto ,  Hiroshi Mochizuki ,  Yoshinori Kumura

IPC分类号： H01L29/94

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/56 ,  H01L28/57 ,  H01L28/65

摘要： There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.

公开(公告)号：US07763920B2

公开(公告)日：2010-07-27

申请号：US11898297

申请日：2007-09-11

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： According to an aspect of the present invention, there is provided a semiconductor memory including a lower electrode, a first insulating region formed in the same layer as the lower electrode, a ferroelectric film formed on the lower electrode and on the first insulating region, an upper electrode formed on the ferroelectric film, a second insulating region formed in the same layer as the upper electrode and a transistor. The first insulating region partitions the lower electrode. The second insulating region partitions the upper electrode. The transistor includes a first impurity region connected to the lower electrode and a second impurity region connected to the upper electrode. At least one of the first insulating region and the second insulating region is formed by insulating the lower electrode or the upper electrode.

摘要翻译： 根据本发明的一个方面，提供了一种半导体存储器，其包括下电极，与下电极形成在同一层中的第一绝缘区域，形成在下电极和第一绝缘区上的强电介质膜， 形成在强电介质膜上的上电极，形成在与上电极相同的层中的第二绝缘区域和晶体管。 第一绝缘区域分隔下电极。 第二绝缘区域分隔上电极。 晶体管包括连接到下电极的第一杂质区和连接到上电极的第二杂质区。 通过使下部电极或上部电极绝缘来形成第一绝缘区域和第二绝缘区域中的至少一个。

公开(公告)号：US20100117128A1

公开(公告)日：2010-05-13

申请号：US12564728

申请日：2009-09-22

申请人： Saku Hashiura ,  Yoshinori Kumura ,  Tohru Ozaki

发明人： Saku Hashiura ,  Yoshinori Kumura ,  Tohru Ozaki

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/11507 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/75

摘要： A semiconductor memory device has a semiconductor substrate, an impurity diffusion layer that is formed at a surface portion of the semiconductor substrate, an interlayer insulating film that is formed on the semiconductor substrate, a contact plug that penetrates the interlayer insulating film, has a top surface formed higher than a top surface of the interlayer insulating film, a region having a convex shape formed higher than the top surface of the interlayer insulating film, and contacts the impurity diffusion layer, a lower capacitor electrode film that is formed on the contact plug and a predetermined region of the interlayer insulating film, a ferroelectric film that is formed on the lower capacitor electrode film, and an upper capacitor electrode film that is formed on the ferroelectric film.

摘要翻译： 半导体存储器件具有半导体衬底，形成在半导体衬底的表面部分的杂质扩散层，形成在半导体衬底上的层间绝缘膜，穿透层间绝缘膜的接触插塞具有顶部 表面形成为比层间绝缘膜的顶表面高的区域，具有形成为高于层间绝缘膜的顶表面的凸形的区域，并且与杂质扩散层接触;形成在接触插塞上的下电容器电极膜 层间绝缘膜的预定区域，形成在下部电容器电极膜上的铁电体膜和形成在强电介质膜上的上部电容电极膜。

公开(公告)号：US07612398B2

公开(公告)日：2009-11-03

申请号：US10931193

申请日：2004-09-01

申请人： Yoshinori Kumura ,  Yoshiro Shimojo ,  Iwao Kunishima ,  Tohru Ozaki

发明人： Yoshinori Kumura ,  Yoshiro Shimojo ,  Iwao Kunishima ,  Tohru Ozaki

IPC分类号： H01L21/02

CPC分类号： G11C11/22 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor storage device wherein a plurality of ferroelectric capacitors are sufficiently covered with a hydrogen barrier film formed thereon comprises a field effect transistor formed on one surface side of a semiconductor substrate, a plurality of ferroelectric capacitors formed close to each other above the field effect transistor, an insulting film configured to cover the plurality of ferroelectric capacitors and planarised a space between adjacent ferroelectric capacitors in a self-aligned manner during formation thereof, and a hydrogen barrier film formed on the insulating film.

摘要翻译： 一种半导体存储装置，其中多个强电介质电容器被形成在其上的氢阻挡膜充分覆盖，其包括形成在半导体衬底的一个表面侧的场效应晶体管，在场效应晶体管之上彼此靠近地形成的多个铁电电容器 被配置为覆盖多个铁电电容器的绝缘膜，并且在其形成期间以自对准的方式平铺相邻的铁电电容器之间的空间，以及形成在绝缘膜上的氢阻挡膜。

公开(公告)号：US07417274B2

公开(公告)日：2008-08-26

申请号：US11491907

申请日：2006-07-25

申请人： Tohru Ozaki ,  Yoshinori Kumura ,  Yoshiro Shimojo ,  Susumu Shuto

发明人： Tohru Ozaki ,  Yoshinori Kumura ,  Yoshiro Shimojo ,  Susumu Shuto

IPC分类号： H01L27/108

CPC分类号： H01L27/11507 ,  H01L21/76834 ,  H01L21/76888 ,  H01L27/11502 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprises an insulation film that is provided on a semiconductor substrate, a first contact plug that is provided in the insulation film and includes a metal, a first adhesive film that is provided on the insulation film, has a higher oxygen affinity than the metal, and includes an oxide, a second adhesive film that is provided on the first contact plug and has a film thickness that is smaller than a film thickness of the first adhesive film, a first capacitor electrode that is provided on the contact plug and the first adhesive film, has a part in direct contact with the first contact plug, a capacitor insulation film that is provided on the first capacitor electrode, and a second capacitor electrode that is provided on the capacitor insulation film.

摘要翻译： 半导体器件包括设置在半导体衬底上的绝缘膜，设置在绝缘膜中并且包括金属的第一接触插塞，设置在绝缘膜上的第一粘合膜具有比该绝缘膜更高的氧亲和力 金属，并且包括氧化物，第二粘合膜，其设置在第一接触插塞上并且具有小于第一粘合膜的膜厚度的膜厚度;设置在接触插塞上的第一电容器电极和 第一粘合膜具有与第一接触插塞直接接触的部分，设置在第一电容器电极上的电容器绝缘膜和设置在电容器绝缘膜上的第二电容器电极。

公开(公告)号：US07348617B2

公开(公告)日：2008-03-25

申请号：US11288204

申请日：2005-11-29

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

IPC分类号： H01L29/94

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.

摘要翻译： 公开了一种包括具有改善的可靠性的铁电电容器的半导体器件。 根据本发明的一个方面，提供了一种半导体器件，包括形成在半导体衬底上的晶体管，形成在晶体管上方的铁电电容器，包括下电极，铁电体膜和上电极，第一氢阻挡膜 形成在所述铁电电容器上，形成在所述第一氢阻挡膜上的绝缘体，设置在所述绝缘体中并与所述上电极电连接的接触插塞，连续地配置在所述接触插塞和所述绝缘体之间的第二氢阻挡膜， 与接触插头。

公开(公告)号：US20080061335A1

公开(公告)日：2008-03-13

申请号：US11898297

申请日：2007-09-11

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： According to an aspect of the present invention, there is provided a semiconductor memory including a lower electrode, a first insulating region formed in the same layer as the lower electrode, a ferroelectric film formed on the lower electrode and on the first insulating region, an upper electrode formed on the ferroelectric film, a second insulating region formed in the same layer as the upper electrode and a transistor. The first insulating region partitions the lower electrode. The second insulating region partitions the upper electrode. The transistor includes a first impurity region connected to the lower electrode and a second impurity region connected to the upper electrode. At least one of the first insulating region and the second insulating region is formed by insulating the lower electrode or the upper electrode.

摘要翻译： 根据本发明的一个方面，提供了一种半导体存储器，包括下电极，与下电极形成在同一层中的第一绝缘区域，形成在下电极和第一绝缘区上的强电介质膜， 形成在强电介质膜上的上电极，形成在与上电极相同的层中的第二绝缘区域和晶体管。 第一绝缘区域分隔下电极。 第二绝缘区域分隔上电极。 晶体管包括连接到下电极的第一杂质区和连接到上电极的第二杂质区。 通过使下部电极或上部电极绝缘来形成第一绝缘区域和第二绝缘区域中的至少一个。

公开(公告)号：US20070054462A1

公开(公告)日：2007-03-08

申请号：US11491907

申请日：2006-07-25

申请人： Tohru Ozaki ,  Yoshinori Kumura ,  Yoshiro Shimojo ,  Susumu Shuto

发明人： Tohru Ozaki ,  Yoshinori Kumura ,  Yoshiro Shimojo ,  Susumu Shuto

IPC分类号： H01L21/20 ,  H01L21/8242 ,  H01L21/00

CPC分类号： H01L27/11507 ,  H01L21/76834 ,  H01L21/76888 ,  H01L27/11502 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprises an insulation film that is provided on a semiconductor substrate, a first contact plug that is provided in the insulation film and includes a metal, a first adhesive film that is provided on the insulation film, has a higher oxygen affinity than the metal, and includes an oxide, a second adhesive film that is provided on the first contact plug and has a film thickness that is smaller than a film thickness of the first adhesive film, a first capacitor electrode that is provided on the contact plug and the first adhesive film, has a part in direct contact with the first contact plug, a capacitor insulation film that is provided on the first capacitor electrode, and a second capacitor electrode that is provided on the capacitor insulation film.

摘要翻译： 半导体器件包括设置在半导体衬底上的绝缘膜，设置在绝缘膜中并且包括金属的第一接触插塞，设置在绝缘膜上的第一粘合膜具有比该绝缘膜更高的氧亲和力 金属，并且包括氧化物，第二粘合膜，其设置在第一接触插塞上并且具有小于第一粘合膜的膜厚度的膜厚度;设置在接触插塞上的第一电容器电极和 第一粘合膜具有与第一接触插塞直接接触的部分，设置在第一电容器电极上的电容器绝缘膜和设置在电容器绝缘膜上的第二电容器电极。

公开(公告)号：US07042037B1

公开(公告)日：2006-05-09

申请号：US10986060

申请日：2004-11-12

申请人： Hiroshi Itokawa ,  Koji Yamakawa ,  Tohru Ozaki ,  Yoshinori Kumura ,  Takamichi Tsuchiya ,  Nicolas Nagel ,  Bum-Ki Moon ,  Andreas Hilliger

发明人： Hiroshi Itokawa ,  Koji Yamakawa ,  Tohru Ozaki ,  Yoshinori Kumura ,  Takamichi Tsuchiya ,  Nicolas Nagel ,  Bum-Ki Moon ,  Andreas Hilliger

IPC分类号： H01L31/062

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，设置在半导体衬底上方并包括底电极，顶电极和设置在底电极和顶电极之间的电介质膜的电容器，底电极包括含有 铱，设置在电介质膜和第一导电膜之间并由贵金属膜形成的第二导电膜，设置在电介质膜和第二导电膜之间并由具有钙钛矿结构的金属氧化物膜形成的第三导电膜， 以及设置在所述第一导电膜和所述第二导电膜之间并且包括金属膜和金属氧化物膜中的至少一种的防扩散膜，所述扩散防止膜防止包含在所述第一导电膜中的铱的扩散。