公开(公告)号：US08546180B2

公开(公告)日：2013-10-01

申请号：US12846534

申请日：2010-07-29

申请人： Shunpei Yamazaki ,  Hiroki Ohara ,  Toshinari Sasaki ,  Kosei Noda ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Hiroki Ohara ,  Toshinari Sasaki ,  Kosei Noda ,  Hideaki Kuwabara

IPC分类号： H01L21/00

CPC分类号： H01L27/1225 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/136227 ,  G02F1/136277 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/24 ,  H01L29/517 ,  H01L29/78609 ,  H01L29/7869

摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

摘要翻译： 目的在于提供一种半导体器件，其具有可以充分降低布线之间的寄生电容的结构。 用作沟道保护层的氧化物绝缘层形成在与栅电极层重叠的氧化物半导体层的一部分上。 在与氧化物绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的周边部分的氧化物绝缘层。 设置覆盖氧化物半导体层的周边部分的氧化物绝缘层以增加栅极电极层与形成在栅电极层的上方或周围的布线层之间的距离，从而降低寄生电容。

公开(公告)号：US08518740B2

公开(公告)日：2013-08-27

申请号：US12828468

申请日：2010-07-01

申请人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara

发明人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC分类号： H01L21/00 ,  H01L21/16

CPC分类号： H01L29/7869 ,  H01L21/67109 ,  H01L21/67115 ,  H01L27/1225

摘要： An object is to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, impurities such as moisture existing in the gate insulating layer are reduced before formation of the oxide semiconductor film, and then heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. After that, slow cooling is performed in an oxygen atmosphere. Besides impurities such as moisture existing in the gate insulating layer and the oxide semiconductor film, impurities such as moisture existing at interfaces between the oxide semiconductor film and upper and lower films provided in contact therewith are reduced.

摘要翻译： 本发明的目的是提供一种具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在制造包括薄膜晶体管的半导体器件的方法中，其中氧化物半导体膜用于包括沟道形成区域的半导体层，在形成氧化物半导体膜之前，存在于栅极绝缘层中的诸如水分的杂质减少 ，然后进行热处理（脱水或脱氢的热处理），以提高氧化物半导体膜的纯度并减少诸如水分的杂质。 之后，在氧气氛中进行缓慢冷却。 除了存在于栅极绝缘层和氧化物半导体膜中的杂质等杂质以外，氧化物半导体膜与与其接触的上下膜之间的界面处存在的诸如水分的杂质减少。

公开(公告)号：US08395153B2

公开(公告)日：2013-03-12

申请号：US13596527

申请日：2012-08-28

申请人： Shunpei Yamazaki ,  Hiroki Ohara ,  Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

发明人： Shunpei Yamazaki ,  Hiroki Ohara ,  Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

IPC分类号： H01L29/786

CPC分类号： H01L27/127 ,  H01L21/477 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1274 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

公开(公告)号：US08389989B2

公开(公告)日：2013-03-05

申请号：US12869278

申请日：2010-08-26

申请人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Junichiro Sakata ,  Masashi Tsubuku

发明人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Junichiro Sakata ,  Masashi Tsubuku

IPC分类号： H01L29/12

CPC分类号： H01L27/1225 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

摘要： It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

摘要翻译： 本发明的目的是制造使用具有良好的电特性和高可靠性的薄膜晶体管作为开关元件的高度可靠的显示装置。 在包括非晶氧化物半导体的底栅薄膜晶体管中，在已经通过热处理脱水或脱氢的氧化物半导体层与源电极层和漏电极层中的每一个之间形成具有晶体区的氧化物导电层， 使用金属材料形成。 因此，可以减小氧化物半导体层与源极电极层和漏极电极层中的每一个之间的接触电阻; 因此，可以提供具有良好电特性的薄膜晶体管和使用该薄膜晶体管的高度可靠的显示装置。

公开(公告)号：US09960278B2

公开(公告)日：2018-05-01

申请号：US13437271

申请日：2012-04-02

申请人： Yuhei Sato ,  Keiji Sato ,  Toshinari Sasaki ,  Tetsunori Maruyama ,  Atsuo Isobe ,  Tsutomu Murakawa ,  Sachiaki Tezuka

发明人： Yuhei Sato ,  Keiji Sato ,  Toshinari Sasaki ,  Tetsunori Maruyama ,  Atsuo Isobe ,  Tsutomu Murakawa ,  Sachiaki Tezuka

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L21/477

CPC分类号： H01L29/7869 ,  H01L21/477

摘要： To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented.

公开(公告)号：US08525304B2

公开(公告)日：2013-09-03

申请号：US13110240

申请日：2011-05-18

申请人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

IPC分类号： H01L23/58

CPC分类号： H01L21/02554 ,  H01L21/02488 ,  H01L21/02664 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.

公开(公告)号：US08304300B2

公开(公告)日：2012-11-06

申请号：US12828464

申请日：2010-07-01

申请人： Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

发明人： Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

摘要翻译： 目的在于提供一种利用具有稳定电特性的晶体管稳定工作的显示装置。 在使用其中使用氧化物半导体层作为沟道形成区域的晶体管的显示装置的制造中，栅电极进一步设置在至少施加到驱动电路的晶体管上。 在将氧化物半导体层用于沟道形成区域的晶体管的制造中，对氧化物半导体层进行热处理以脱水或脱氢; 因此，存在于氧化物半导体层和栅极绝缘层之间的界面处的杂质，其存在于氧化物半导体层下方并与氧化物半导体层接触，以及氧化物半导体层与设置在该氧化物半导体层上的与保护绝缘层接触的界面 可以减少氧化物半导体层。

公开(公告)号：US06494976B1

公开(公告)日：2002-12-17

申请号：US09573436

申请日：2000-05-16

申请人： Takayuki Hayashi ,  Hiroo Yamaguchi ,  Takaki Okochi ,  Takeshi Iguchi ,  Toshinari Sasaki ,  Kazuaki Kafuku

发明人： Takayuki Hayashi ,  Hiroo Yamaguchi ,  Takaki Okochi ,  Takeshi Iguchi ,  Toshinari Sasaki ,  Kazuaki Kafuku

IPC分类号： B32B3116

CPC分类号： B23K20/106 ,  B23K20/10 ,  B23K20/24 ,  B23K33/00 ,  B23K2101/14 ,  B23K2101/36

摘要： A cooling device has a radiator plate and a corrugated fin for cooling an electrical component. In a manufacturing process of the cooling device, a symmetrically constructed tool section presses the radiator plate and the fin against an anvil. The radiator plate has an attaching portion where an electrical component is attached. Knurled surface for preventing a slide is formed on the tool section only at a surrounding area to prevent a deformation of the attaching portion. The tool section and the radiator plate vibrate ultrasonically in a longitudinal direction of corrugations of the fin to prevent a crack on the fin.

摘要翻译： 冷却装置具有用于冷却电气部件的散热板和波纹状散热片。 在冷却装置的制造过程中，对称构造的工具部分将散热板和散热片压靠在砧座上。 散热板具有安装有电气部件的安装部。 仅在周围区域在工具部分上形成用于防止滑动的滚花表面，以防止附接部分的变形。 工具部分和散热板在翅片的波纹的纵向方向上超声振动，以防止翅片上的裂纹。

公开(公告)号：US09299851B2

公开(公告)日：2016-03-29

申请号：US13282529

申请日：2011-10-27

申请人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda

IPC分类号： H01L21/84 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L21/441 ,  H01L21/465 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869

摘要： An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited.

摘要翻译： 本发明的目的是提供一种包括控制载流子密度的氧氮化物半导体的半导体器件。 通过将控制氮引入到氧化物半导体层中，可以制造其中具有期望的载流子密度和特性的氧氮化物半导体用于沟道的晶体管。 此外，通过使用氧氮化物半导体，即使在氮氧化物半导体层和源电极之间以及氧氮化物半导体层和漏电极之间没有设置低电阻层等的情况下，也可以表现出良好的接触特性。

公开(公告)号：US09263589B2

公开(公告)日：2016-02-16

申请号：US13110236

申请日：2011-05-18

申请人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/78606 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869

摘要： An object of the present invention is to manufacture a semiconductor device where fluctuation in electrical characteristics is small and reliability is high in a transistor in which an oxide semiconductor is used. An insulating layer from which oxygen is released by heating is used as a base insulating layer of an oxide semiconductor layer which forms a channel. Oxygen is released from the base insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the base insulating layer and the oxide semiconductor layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.

摘要翻译： 本发明的目的是制造其中使用氧化物半导体的晶体管的电特性波动小并且可靠性高的半导体器件。 使用通过加热而释放氧的绝缘层作为形成沟道的氧化物半导体层的基极绝缘层。 氧从基底绝缘层释放出来，由此可以减少氧化物半导体层的缺氧和基底绝缘层与氧化物半导体层之间的界面状态。 因此，可以制造电特性波动小，可靠性高的半导体装置。