公开(公告)号：US08119739B2

公开(公告)日：2012-02-21

申请号：US12280789

申请日：2007-02-27

申请人： Hideo Asano ,  Akio Naka ,  Hirokazu Niwa ,  Tomoyuki Kuwamoto ,  Hiroyasu Watabe ,  Yoshiyuki Shiotani

发明人： Hideo Asano ,  Akio Naka ,  Hirokazu Niwa ,  Tomoyuki Kuwamoto ,  Hiroyasu Watabe ,  Yoshiyuki Shiotani

IPC分类号： C08F269/00 ,  C08F20/26 ,  G03C1/00 ,  G03C7/00

CPC分类号： G02B5/3083 ,  C08F220/26 ,  C08J5/18 ,  C08J2333/06

摘要： The invention provides a retardation film, composed primarily of an acrylic polymer, with transparency, heat resistance, and large retardation. The retardation film of the present invention is composed primarily of an acrylic polymer. The film has an in-plane retardation of from 130 nm to 500 nm, inclusive, per 100 μm thickness at a wavelength of 589 nm. The film has a total light transmittance of not less than 85%. The retardation film has a glass transition temperature of preferably from 110° C. to 200° C., inclusive. The acrylic polymer, which is the primary component, preferably has a lactone ring structure.

摘要翻译： 本发明提供一种延迟膜，其主要由丙烯酸类聚合物组成，具有透明性，耐热性和较大延迟。 本发明的延迟膜主要由丙烯酸类聚合物构成。 该薄膜在波长589nm处每100μm厚度具有130nm至500nm的面内延迟。 该膜具有不小于85％的总透光率。 延迟膜的玻璃化转变温度优选为110℃〜200℃。 作为主要成分的丙烯酸系聚合物优选具有内酯环结构。

公开(公告)号：US20100316353A1

公开(公告)日：2010-12-16

申请号：US12860891

申请日：2010-08-21

申请人： Hideo Asano ,  Daniel James Colegrove ,  Akira Kibashi ,  Masahiko Sato

发明人： Hideo Asano ,  Daniel James Colegrove ,  Akira Kibashi ,  Masahiko Sato

IPC分类号： H04N9/80

CPC分类号： G11B27/105 ,  G11B27/005 ,  G11B27/32 ,  G11B27/34 ,  G11B2220/2516 ,  H04N5/781 ,  H04N5/783 ,  H04N21/4325 ,  H04N21/4334 ,  H04N21/443 ,  H04N21/47202

摘要： A method and apparatus for providing stream linking in audio/video disk media is disclosed. The present invention sets-up an audio/video stream on a disk drive, uses read and write commands for accessing contiguous data and, given an established stream, establishes a linked stream by sending a linked stream request with the number of a primary stream to the drive. The new stream inherits the beginning and ending addresses of the primary stream. Passed pointer detection is enabled for linked stream pointers passing primary stream pointers

摘要翻译： 公开了一种用于在音频/视频盘介质中提供流链接的方法和装置。 本发明在磁盘驱动器上设置音频/视频流，使用用于访问连续数据的读取和写入命令，并且给定已建立的流，通过发送具有主流数量的链接流请求来建立链接流， 驱动器。 新流继承主流的开始和结束地址。 对通过主流指针的链接流指针启用了通过的指针检测

公开(公告)号：US20080094882A1

公开(公告)日：2008-04-24

申请号：US11876607

申请日：2007-10-22

申请人： Hideo Asano ,  Koji Kitamura ,  Hisatada Miyatake ,  Kohki Noda ,  Toshio Sunaga ,  Hiroshi Umezaki

发明人： Hideo Asano ,  Koji Kitamura ,  Hisatada Miyatake ,  Kohki Noda ,  Toshio Sunaga ,  Hiroshi Umezaki

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A non-volatile memory device according to one embodiment comprises a plurality of memory cells each comprising a magneto resistive element and a selection transistor; wherein at least some of the memory cells are arranged into a two dimensional array; a first interconnect line extending in a first direction of the memory array and functioning as a gate electrode of a selection transistor included in each memory cell; a second interconnect line extending in the first direction of the memory array; a third interconnect line extending in a second direction; wherein the magneto resistive element of at least some of the memory cells is sandwiched between the second and third interconnect lines, wherein the second interconnect line extends at least partially along all magneto resistive elements in a particular one of the memory cells.

摘要翻译： 根据一个实施例的非易失性存储器件包括多个存储单元，每个存储单元包括磁阻元件和选择晶体管; 其中所述存储器单元中的至少一些被布置成二维阵列; 第一互连线，沿着所述存储器阵列的第一方向延伸并且用作包含在每个存储单元中的选择晶体管的栅电极; 在存储器阵列的第一方向上延伸的第二互连线; 第三互连线，沿第二方向延伸; 其中所述存储器单元中的至少一些的所述磁阻元件夹在所述第二和第三互连线之间，其中所述第二互连线至少部分地沿着所述存储器单元中的特定一个的所有磁阻元件延伸。

公开(公告)号：US20070144727A1

公开(公告)日：2007-06-28

申请号：US11644021

申请日：2006-12-21

申请人： Shunsaku Hirayama ,  Hideo Asano ,  Yasuhiro Mizuno

发明人： Shunsaku Hirayama ,  Hideo Asano ,  Yasuhiro Mizuno

IPC分类号： B60H3/00 ,  B60H1/00

CPC分类号： B60H1/0005 ,  B60H2001/00092 ,  B60H2001/00099

摘要： An air conditioner for a vehicle has an air conditioning casing for defining therein a passage of air, a heating heat exchanger for heating air, and an air mixing door at an air upstream side of the heating heat exchanger to adjust an air volume ratio between air passing the heating heat exchanger and air passing a cool air bypass passage. In an air mixing state where the air mixing door is positioned at a substantially intermediate position between a maximum bypass position and a maximum heating position, additional air flow is compulsorily caused at a generation end of an interface between cool air and warm air in a cool-warm air mixing space, where cool air supplied through the cool air bypass passage and warm air heated by the heating heat exchanger and supplied through a warm air passage are mixed.

摘要翻译： 一种用于车辆的空调器具有用于在其中限定空气通道的空调壳体，用于加热空气的加热热交换器和在加热热交换器的空气上游侧的空气混合门，以调节空气的空气体积比 使加热热交换器和空气通过冷空气旁路通道。 在空气混合门位于最大旁路位置和最大加热位置之间的基本上中间位置的空气混合状态下，在冷空气和暖空气之间的界面的产生端强制地引起额外的空气流 - 通过冷气旁路通道供应的冷气和由加热热交换器加热并通过暖风通道供应的暖空气混合。

公开(公告)号：US20060227600A1

公开(公告)日：2006-10-12

申请号：US11381578

申请日：2006-05-04

申请人： Hisatada Miyatake ,  Kohki Noda ,  Toshio Sunaga ,  Hiroshi Umezaki ,  Hideo Asano ,  Koji Kitamura

发明人： Hisatada Miyatake ,  Kohki Noda ,  Toshio Sunaga ,  Hiroshi Umezaki ,  Hideo Asano ,  Koji Kitamura

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A non-volatile memory device according to one embodiment includes a plurality of memory cells each comprising a magneto resistive element and a selection transistor, where the memory cells are arranged into a two dimensional array. A first interconnect line extends in a first direction of the memory array and functions as a gate electrode of a selection transistor included in each memory cell. A second interconnect line extends in the first direction of the memory array. A third interconnect line extends in a second direction. The magneto resistive element of at least some of the memory cells is sandwiched between the second and third interconnect lines

摘要翻译： 根据一个实施例的非易失性存储器件包括多个存储单元，每个存储单元包括磁阻元件和选择晶体管，其中存储单元被布置成二维阵列。 第一互连线在存储器阵列的第一方向上延伸，并且用作包含在每个存储单元中的选择晶体管的栅电极。 第二互连线在存储器阵列的第一方向上延伸。 第三互连线在第二方向上延伸。 至少一些存储单元的磁电阻元件夹在第二和第三互连线之间

公开(公告)号：US20060183820A1

公开(公告)日：2006-08-17

申请号：US11354284

申请日：2006-02-13

申请人： Hideo Asano ,  Akihiko Yamashita

发明人： Hideo Asano ,  Akihiko Yamashita

IPC分类号： C04B24/26

CPC分类号： C08F216/1416 ,  C04B24/2647 ,  C08F220/06 ,  C08F222/00

摘要： The present invention is to provide a method for producing a copolymer for a cement admixture, which enables to easily produce a blend of a plurality of copolymers with different monomer compositions in one polymerization operation, and is superior in water reducing performance and/or slump retention ability. Disclosed is a method for producing a copolymer for a cement admixture, which comprises a step of polymerizing monomer components comprising unsaturated polyalkylene glycol ether-based monomer (A) and unsaturated organic acid-based monomer (B), wherein the unsaturated polyalkylene glycol ether-based monomer (A) is added into a reactor in advance and the unsaturated organic acid-based monomer (B) is added thereto with an addition rate thereof changed at least one time.

摘要翻译： 本发明提供一种水泥掺混物的共聚物的制造方法，其能够在一个聚合操作中容易地制备具有不同单体组成的多种共聚物的共混物，并且具有优异的降水性能和/或坍落度保持率 能力。 本发明公开了一种水泥混合物共聚物的制造方法，其特征在于，包括使包含不饱和聚亚烷基二醇醚系单体（A）和不饱和有机酸系单体（B）的单体成分聚合的工序，其中不饱和聚亚烷基二醇醚 - 预先将反应性单体（A）加入到反应器中，并向其中加入不饱和有机酸类单体（B），添加速率至少改变一次。

公开(公告)号：US07038870B2

公开(公告)日：2006-05-02

申请号：US10691757

申请日：2003-10-22

申请人： Hiroaki Suzuki ,  Noriaki Sato ,  Michiya Kazusawa ,  Hideo Asano

发明人： Hiroaki Suzuki ,  Noriaki Sato ,  Michiya Kazusawa ,  Hideo Asano

IPC分类号： G11B5/02 ,  G11B5/09

CPC分类号： G11B5/012 ,  G11B2005/001 ,  G11B2005/0013

摘要： A data storage device, data write method, and program to avoid extra power consumption and suppress a write error that may result from voltage variations. To write data onto a magnetic disk, a write circuit generates a write current that is to be supplied to a write head. The write circuit operates on a positive power supply voltage provided by a host computer, and on a negative power supply voltage generated by a programmable DC—DC converter mounted on a hard disk drive's card. The magnitude of the negative power supply voltage generated by the programmable DC—DC converter is varied in accordance with the temperature surrounding the magnetic disk. Further, the magnitude of the negative power supply voltage generated by the programmable DC—DC converter is varied in accordance with the magnitude of the positive power supply voltage supplied from the host computer.

摘要翻译： 数据存储设备，数据写入方法和程序，以避免额外的功耗并抑制可能由电压变化引起的写入错误。 为了将数据写入磁盘，写入电路产生要写入写入头的写入电流。 写入电路由主机提供的正电源电压和由安装在硬盘驱动器卡上的可编程DC-DC转换器产生的负电源电压进行操作。 由可编程DC-DC转换器产生的负电源电压的大小根据磁盘周围的温度而变化。 此外，由可编程DC-DC转换器产生的负电源电压的大小根据从主计算机提供的正电源电压的大小而变化。

公开(公告)号：US20050141143A1

公开(公告)日：2005-06-30

申请号：US11009773

申请日：2004-12-10

申请人： Hiroyuki Ono ,  Hiroaki Suzuki ,  Toshio Sunaga ,  Hisatada Miyatake ,  Hideo Asano

发明人： Hiroyuki Ono ,  Hiroaki Suzuki ,  Toshio Sunaga ,  Hisatada Miyatake ,  Hideo Asano

IPC分类号： G11B5/39 ,  G11B5/127 ,  G11B5/33 ,  G11B5/40 ,  H01L43/08

CPC分类号： G11B5/39

摘要： In the case of magnetic head of magnetoresistance effect type whose breakdown voltage is as low as 0.3 V, it is impractical to ignore even a very small amount of static electricity that occurs during fabrication or use. In one embodiment, the desired magnetic head is produced by forming an SiO2 layer on a silicon slider, thereby forming an SOI substrate; forming on the SOI substrate circuits to protect a TMR element from overvoltage and a read-write circuit; forming field effect transistors from an Si semiconductor layer (formed by reduction of the SiO2 layer or epitaxial growth on the SiO2 layer); forming three electrodes (source, gate, drain) on the Si semiconductor layer; forming a Schottky diode by Schottky contact (metal) with the Si semiconductor layer; forming overvoltage protective circuits of aluminum wiring on the SOI substrate; and forming a TMR element.

摘要翻译： 在其击穿电压低至0.3V的磁阻效应型磁头的情况下，即使在制造或使用期间发生的非常少量静电也是不切实际的。 在一个实施例中，通过在硅滑块上形成SiO 2层来形成所需的磁头，由此形成SOI衬底; 在SOI衬底电路上形成以保护TMR元件免受过电压和读写电路; 从Si半导体层（通过SiO 2层的还原或SiO 2层上的外延生长形成）形成场效应晶体管; 在Si半导体层上形成三个电极（源极，栅极，漏极）; 通过与Si半导体层的肖特基接触（金属）形成肖特基二极管; 在SOI衬底上形成铝布线的过电压保护电路; 并形成TMR元件。

公开(公告)号：US06891690B2

公开(公告)日：2005-05-10

申请号：US10301151

申请日：2002-11-20

申请人： Hideo Asano ,  Martin Aureliano Hassner ,  Nyles Norbert Heise ,  Steven R. Hetzler ,  Tetsuya Tamura

发明人： Hideo Asano ,  Martin Aureliano Hassner ,  Nyles Norbert Heise ,  Steven R. Hetzler ,  Tetsuya Tamura

IPC分类号： G06F11/10 ,  G06F11/00 ,  G11B5/09 ,  G11B20/18 ,  H03M13/00 ,  H03M13/03 ,  H03M13/11 ,  H03M13/15 ,  H03M13/29 ,  H03M13/47

CPC分类号： H03M13/25 ,  G06F11/1076 ,  G06F2211/104 ,  H03M13/1515 ,  H03M13/29 ,  H03M13/47

摘要： An encoding system and associated method protect against miscorrection due to parity sector correction in, for example, an on-drive RAID system. The system adds a parity cluster block, which itself is a complete, C3-protected cluster. Having the cluster level, C4 level correction, by parity sectors, checked and verified by C3 checks that have high reliability level, as well as the capability for checking consistency of a cluster block, even in the presence of “jami” errors, makes this possibility unlikely. A scrub algorithm avoids read-modify-write operations by deferring the completion of the C2 and C3-ckecks until the storage device is idle.

摘要翻译： 编码系统和相关联的方法防止在例如驱动器上的RAID系统中的奇偶校验扇区校正时的错误修复。 该系统添加了一个奇偶校验集群块，它本身是一个完整的C3保护集群。 具有集群级别，C4级校正，奇偶校验扇区，由具有高可靠性级别的C3检查检查和验证，以及检查集群块的一致性的能力，即使存在“jami”错误，这使得 可能性不大 擦除算法通过推迟C2和C3-ckecks的完成直到存储设备空闲来避免读取 - 修改 - 写入操作。

公开(公告)号：US06794460B2

公开(公告)日：2004-09-21

申请号：US10295657

申请日：2002-11-15

申请人： Hideo Asano ,  Kazumi Fujioka

发明人： Hideo Asano ,  Kazumi Fujioka

IPC分类号： C08F816

CPC分类号： C08F8/16 ,  Y10T428/31812 ,  Y10T428/31859 ,  Y10T428/31866

摘要： The present invention provides a production process for a transparent heat-resistant resin, and further, a transparent heat-resistant resin and uses therefor, wherein the production process involves high dealcoholation conversion and a low content of residual volatiles in the resultant resin, and therefore can prevent foam or silver streak from occurring in the molded product, and further, facilitates melt-molding such as injection molding, and is fit for industrial production, and involves good efficiency. The production process for a transparent heat-resistant resin comprises the step of running a dealcoholation reaction of a polymer having a hydroxyl group and an ester group in its molecular chain to introduce a lactone ring structure into the polymer to obtain a transparent resin having the heat resistance, and is characterized in that the dealcoholation reaction is run in the presence of a solvent, and further characterized by further comprising a devolatilization step which is carried out jointly with the dealcoholation reaction.

摘要翻译： 本发明提供一种透明耐热树脂的制造方法，另外，提供一种透明耐热树脂及其用途，其中生产方法涉及高脱氢转化率和所得树脂中残留挥发物含量低，因此 可以防止模制品中发生泡沫或银条纹，并且进一步促进诸如注射成型的熔融模塑，并且适合于工业生产，并且涉及高效率。 透明耐热树脂的制造方法包括在其分子链中进行具有羟基和酯基的聚合物的脱醇反应以将内酯环结构引入聚合物中以获得具有热的透明树脂的步骤 电阻，其特征在于脱醇反应在溶剂存在下进行，并进一步表征为进一步包括与脱醇反应联合进行的脱挥发分步骤。