公开(公告)号：US20100117123A1

公开(公告)日：2010-05-13

申请号：US12690024

申请日：2010-01-19

申请人： Howard E. Rhodes ,  Hidetoshi Nozaki

发明人： Howard E. Rhodes ,  Hidetoshi Nozaki

IPC分类号： H01L31/112

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/0288

摘要： An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.

摘要翻译： 使用具有掺杂有铟的多晶硅栅极的传输栅极的有源像素。 像素包括形成在半导体衬底中的感光元件和形成在半导体衬底中的n型浮动节点。 在浮动节点和感光元件之间形成具有传输门的n沟道传输晶体管。 像素衬底具有掺杂有铟掺杂剂的横向掺杂梯度。

公开(公告)号：USRE45357E1

公开(公告)日：2015-02-03

申请号：US12714339

申请日：2010-02-26

申请人： Howard E. Rhodes

发明人： Howard E. Rhodes

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14609

摘要： A CMOS imager which includes a substrate voltage pump to bias a doped area of a substrate to prevent leakage into the substrate from the transistors formed in the doped area. The invention also provides a CMOS imager where a photodetector sensor array is formed in a first p-well and readout logic is formed in a second p-well. The first p-well can be selectively doped to optimize cross-talk, collection efficiency and transistor leakage, thereby improving the quantum efficiency of the sensor array while the second p-well can be selectively doped and/or biased to improve the speed and drive of the readout circuitry.

公开(公告)号：US08859352B2

公开(公告)日：2014-10-14

申请号：US13559467

申请日：2012-07-26

申请人： Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Vincent Venezia ,  Yin Qian

发明人： Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Vincent Venezia ,  Yin Qian

IPC分类号： H01L21/00 ,  H01L29/66 ,  H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/6659 ,  H01L29/66636

摘要： Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors.

摘要翻译： 本发明的实施例涉及一种具有设置在硅衬底中的像素晶体管和外围晶体管的图像传感器。 对于一些实施例，保护涂层设置在外围晶体管上，并且掺杂的硅在衬底上外延生长以形成用于像素晶体管的轻掺杂漏极（LDD）区域。 保护氧化物可以用于在像素晶体管的LDD区域的形成期间防止外围晶体管上的硅的外延生长。

公开(公告)号：US08772898B2

公开(公告)日：2014-07-08

申请号：US13370085

申请日：2012-02-09

申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

IPC分类号： H01L31/0216

CPC分类号： H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

摘要： A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.

摘要翻译： 背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。 半导体层具有前表面和背面。 半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。 像素阵列被定位成接收穿过半导体层的背面的外部入射光。 半导体层还包括设置在传感器阵列区域外部的半导体层的外围电路区域中的发光元件。 沟槽设置在光感测元件和发光元件之间的半导体层中。 当光路在半导体层内部时，沟槽定位成阻碍发光元件和光感测元件之间的光路。

公开(公告)号：US20130258144A1

公开(公告)日：2013-10-03

申请号：US13432958

申请日：2012-03-28

申请人： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

发明人： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC分类号： H04N9/64

CPC分类号： H01L27/14623 ,  H01L27/14627 ,  H01L27/1464

摘要： Embodiments of the invention describe a system, apparatus and method for obtaining black reference pixels for dark current correction processing are described herein. Embodiments of the invention capture image signal data via a plurality of pixel cells of a pixel unit of an image device, wherein capturing image signal data involves establishing a first state of exposing incident light on each pixel of the pixel unit and a second state of shielding incident light from one or more pixels of the pixel unit via a shutter unit disposed over the pixel unit. Image signal data from each pixel of the pixel unit captured during the first state and the second state is read, and scene image data is created by combining a subset of image signal data captured during the first state with a dark current component including a subset of image signal data captured during the second state.

摘要翻译： 本发明的实施例描述了用于获得用于暗电流校正处理的黑色参考像素的系统，装置和方法。 本发明的实施例经由图像装置的像素单元的多个像素单元捕获图像信号数据，其中捕获图像信号数据涉及建立在像素单元的每个像素上曝光入射光的第一状态和第二屏蔽状态 通过设置在像素单元上的快门单元，来自像素单元的一个或多个像素的入射光。 读取在第一状态和第二状态期间捕获的像素单元的每个像素的图像信号数据，并且通过将在第一状态期间捕获的图像信号数据的子集与包括一个 在第二状态期间捕获的图像信号数据。

公开(公告)号：US08513762B2

公开(公告)日：2013-08-20

申请号：US13250237

申请日：2011-09-30

申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

IPC分类号： H01L31/00 ,  H01L31/0232

CPC分类号： H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

摘要翻译： 背面照明成像传感器包括垂直堆叠传感器，其通过使用不同的硅层在堆叠（或单独的堆叠）内的不同级别形成光电二极管来减少串扰，以检测不同的颜色。 形成蓝光，绿光和红光检测硅层，蓝光检测层位于最靠近传感器背面的位置，红光检测层位于离传感器背面最远的位置。 可以在红色和绿色光检测层之间插入抗反射涂层（ARC）层，以减少由红光检测层捕获的光学交叉对话。 可以使用非晶多晶硅来形成红光检测层，以提高检测红光的效率。

公开(公告)号：US08502290B2

公开(公告)日：2013-08-06

申请号：US13615196

申请日：2012-09-13

申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L21/26586 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

摘要： Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.

摘要翻译： 用于通过掺杂剂注入在CMOS像素中形成光电检测器区域的方法的实施例，该方法包括掩蔽用于形成光电检测器区域的基板的表面的光电检测器区域，将基板定位在多个扭曲角度 在多个扭转角度中，以选定的倾斜角将光电探测器区域上的掺杂剂引导。 CMOS像素的实施例包括形成在衬底中的光电检测器区域，所述光电检测器区域包括重叠的第一和第二掺杂剂注入，其中所述重叠区域具有与所述第一和第二植入物的非重叠部分不同的掺杂剂浓度， 形成在基板上，以及形成在光电检测器和传输门之间的基板上的传输门。 公开和要求保护其他实施例。

公开(公告)号：US08492865B2

公开(公告)日：2013-07-23

申请号：US12848628

申请日：2010-08-02

申请人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

IPC分类号： H01L27/146 ,  H01L31/02

CPC分类号： H01L27/14656 ,  H01L27/1463 ,  H01L27/1464

摘要： An image sensor array includes a substrate layer, a metal layer, an epitaxial layer, a plurality of imaging pixels, and a contact dummy pixel. The metal layer is disposed above the substrate layer. The epitaxial layer is disposed between the substrate layer and the metal layer. The imaging pixels are disposed within the epitaxial layer and each include a photosensitive element for collecting an image signal. The contact dummy pixel is dispose within the epitaxial layer and includes an electrical conducting path through the epitaxial layer. The electrical conducting path couples to the metal layer above the epitaxial layer.

摘要翻译： 图像传感器阵列包括基底层，金属层，外延层，多个成像像素和接触虚拟像素。 金属层设置在基底层的上方。 外延层设置在基板层和金属层之间。 成像像素设置在外延层内，并且每个包括用于收集图像信号的光敏元件。 接触虚拟像素配置在外延层内并且包括穿过外延层的导电路径。 导电路径耦合到外延层上方的金属层。

公开(公告)号：US08431429B2

公开(公告)日：2013-04-30

申请号：US13554490

申请日：2012-07-20

申请人： Hsin-Chih Tai ,  Howard E. Rhodes ,  Duli Mao ,  Vincent Venezia ,  Yin Qian

发明人： Hsin-Chih Tai ,  Howard E. Rhodes ,  Duli Mao ,  Vincent Venezia ,  Yin Qian

IPC分类号： H01L31/14

CPC分类号： H01L24/05 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L2224/02165 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327

摘要： A method of fabricating a backside illuminated imaging sensor that includes a device layer, a metal stack, and an opening is disclosed. The device layer has an imaging array formed in a front side of the device layer, where the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer and includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The method includes depositing a film on the back side of the device layer and within the opening, then etching the film to form a frame within the opening to structurally reinforce the metal pad.

摘要翻译： 公开了一种制造背面照明成像传感器的方法，其包括器件层，金属叠层和开口。 器件层具有形成在器件层的前侧的成像阵列，其中成像阵列适于从器件层的背面接收光。 金属叠层耦合到器件层的前侧，并且包括具有金属焊盘的至少一个金属互连层。 开口从器件层的背面延伸到金属焊盘，露出用于引线接合的金属焊盘。 该方法包括在器件层的背侧和开口内沉积薄膜，然后蚀刻薄膜以在开口内形成框架以在金属垫上结构地加固。

公开(公告)号：US20130009043A1

公开(公告)日：2013-01-10

申请号：US13619879

申请日：2012-09-14

申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

IPC分类号： H01L31/113 ,  H01L27/148

CPC分类号： H04N5/35509 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/37452 ,  H04N5/376

摘要： An image sensor includes a pixel array, a bit line, a supplemental capacitance node line, and a control circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells different from the first group. The control circuit is coupled to the supplemental capacitance node line to selectively increase the potential at the FD node of each of the pixel cells of the second group by selectively asserting a FD boost signal on the supplemental capacitance node line.

摘要翻译： 图像传感器包括像素阵列，位线，补充电容节点线和控制电路。 像素阵列包括多个像素单元，每个像素单元包括浮动扩散（FD）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。 位线被耦合以选择性地进行从第一组像素单元输出的图像数据。 辅助电容节点线耦合到与第一组不同的第二组像素单元的FD节点。 控制电路通过选择性地在辅助电容节点线上确定FD升压信号来耦合到辅助电容节点线，以选择性地增加第二组的每个像素单元的FD节点的电位。