Lithographic apparatus and a device manufacturing method
    22.
    发明授权
    Lithographic apparatus and a device manufacturing method 有权
    光刻设备和器件制造方法

    公开(公告)号:US07126664B2

    公开(公告)日:2006-10-24

    申请号:US10888513

    申请日:2004-07-12

    IPC分类号: G03B27/52 G03B27/42 G03B27/62

    CPC分类号: G03F7/70841

    摘要: A lithographic apparatus is disclosed. The apparatus includes a support constructed to support a patterning device, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam. A projection system is configured to project the patterned radiation beam onto a target portion of a substrate. A first vacuum environment contains the projection system, a second vacuum environment contains the patterning device support, and a separator separates the first and second vacuum environments. The separator includes an aperture for passing the projection beam from the first vacuum environment towards the patterning device and/or vice-versa. The patterning device forms at least part of a seal for substantially sealing the aperture of the separator.

    摘要翻译: 公开了一种光刻设备。 该装置包括构造成支撑图案形成装置的支撑件,该图案形成装置能够在其横截面中赋予具有图案的辐射束以形成图案化的辐射束。 投影系统被配置为将图案化的辐射束投影到基板的目标部分上。 第一真空环境包含投影系统,第二真空环境包含图案形成装置支撑件,分离器分离第一和第二真空环境。 分离器包括用于使投影束从第一真空环境朝向图案形成装置传递的孔,和/或反之亦然。 图案形成装置形成用于基本上密封隔膜的孔的密封件的至少一部分。

    FLUID HANDLING STRUCTURE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    28.
    发明申请
    FLUID HANDLING STRUCTURE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 有权
    流体处理结构,平面设备和设备制造方法

    公开(公告)号:US20110261332A1

    公开(公告)日:2011-10-27

    申请号:US13090311

    申请日:2011-04-20

    IPC分类号: G03B27/52

    CPC分类号: G03F7/70341

    摘要: A fluid handling structure for a lithographic apparatus is disclosed, the fluid handling structure successively has, at a boundary from a space configured to contain immersion fluid to a region external to the fluid handling structure: an elongate opening or a plurality of openings arranged in a first line that, in use, are directed towards a substrate and/or a substrate table configured to support the substrate; a gas knife device having an elongate aperture in a second line; and an elongate opening or a plurality of openings adjacent the gas knife device.

    摘要翻译: 公开了一种用于光刻设备的流体处理结构,流体处理结构在从被配置为将浸没流体包含在流体处理结构外部区域的空间的边界处依次具有:细长开口或多个开口, 在使用中的第一线指向被配置为支撑衬底的衬底和/或衬底台; 气刀设备,其具有在第二线中的细长孔; 以及与气刀装置相邻的细长开口或多个开口。

    Lithographic apparatus and device manufacturing method
    29.
    发明授权
    Lithographic apparatus and device manufacturing method 有权
    平版印刷设备和器件制造方法

    公开(公告)号:US08634058B2

    公开(公告)日:2014-01-21

    申请号:US12579083

    申请日:2009-10-14

    IPC分类号: G02B27/42 G03F7/20

    CPC分类号: G03F7/70341 G03F7/70358

    摘要: An immersion lithographic apparatus is provided in which a maximum permissible velocity of the substrate relative to a fluid confinement structure that controls the immersion fluid is determined based on a property of the substrate to be exposed and, during the exposure process, the velocity of the substrate relative to the fluid confinement structure is limited to be below this maximum permissible velocity.

    摘要翻译: 提供一种浸没式光刻设备,其中基于待暴露的基板的性质和在曝光过程中基板的速度确定基板相对于控制浸没流体的流体限制结构的最大允许速度 相对于流体限制结构被限制在低于该最大允许速度。