摘要:
A method can be provided of forming a photoresist pattern on a substrate. The method employs a photoresist composition comprising a photosensitive polymer, the photosensitive polymer has a molecular weight in a range of from about 1,000 up to about 100,000 and comprises repeating units having a structural formula: wherein R represents an acid-labile hydrocarbon group having from 1 up to 20 carbon atoms.
摘要:
A silicone hyper-branched polymer surfactant is included in a rinsing solution which may be used to remove photoresist residues. The silicone hyper-branched polymer surfactant is prepared by polymerizing a monomer represented by the following chemical formula (1), where R1 denotes a vinyl group and R2 denotes hydrogen, and includes both a hydrophobic group and a hydrophilic group
摘要:
In a method of forming a pattern and a method of manufacturing a capacitor using the same, a conductive layer is formed on a mold layer having an opening. A first buffer layer pattern including a polymer having a repeating unit of anthracene-methyl methacrylate and a repeating unit of alkoxyl-vinyl benzene is formed on the conductive layer in the opening. The first buffer layer pattern is baked to cross-link the polymers and form a second buffer layer pattern that is insoluble in a developing solution. The conductive layer on a top portion of the mold layer is selectively removed by using the second buffer layer pattern as an etching mask. Accordingly, a conductive pattern for a semiconductor device is formed. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.
摘要:
In a photoresist composition including a blocking group less sensitive to a temperature during a PEB process, the photoresist composition comprising from about 2% to about 10% by weight of a photosensitive resin, from about 0.1% to about 0.5% by weight of a photoacid generator, and a residual amount of a solvent, the photosensitive resin including a blocking group having a weight average molecular weight of from about 70 to about 130.
摘要:
A method of fabricating a microarray is provided, which includes providing a substrate having a surface that is protected by an acid labile protective group that includes an acetal group represented by formula (1) and has a functional group that can be coupled with a monomer of a probe; applying a photoresist including a photo acid generator to the substrate; selectively exposing the photoresist to deprotect the acid labile protective group that corresponds to an exposed region; removing the photoresist; and coupling the monomer that is combined with the acid labile protective group with the deprotected functional group. Formula (1) has the following structure: wherein, R1 denotes an alkyl group having 1 to 5 carbon atoms, R2 denotes hydrogen or a methyl group, and Y denotes a monomer or a site coupled with the substrate.
摘要:
A photoresist-composition includes about 4 to about 20 percent by weight of an acrylate copolymer; about 0.1 to about 0.5 percent by weight of a photoacid generator; and a solvent. The acrylate copolymer includes about 28 to about 38 percent by mole of a first repeating unit represented by Formula (1), about 28 to about 38 percent by mole of a second repeating unit represented by Formula (2), about 0.5 to about 22 percent by mole of a third repeating unit represented by Formula (3) and about 4 to about 42 percent by mole of a fourth repeating unit represented by Formula (4), wherein R1, R2, R3 and R4 independently represent a hydrogen atom or a C1-C3 alkyl group, X is a blocking group including an alkyl-substituted adamantane or an alkyl-substituted tricycloalkane, Y is a blocking group including a lactone, Z1 is a blocking group including a hydroxyl-substituted adamantane, and Z2 is a blocking group including an alkoxy-substituted adamantane.
摘要翻译:光致抗蚀剂组合物包含约4至约20重量%的丙烯酸酯共聚物; 约0.1至约0.5重量%的光酸产生剂; 和溶剂。 丙烯酸酯共聚物包含约28至约38摩尔%的由式(1)表示的第一重复单元,约28至约38摩尔%的由式(2)表示的第二重复单元,约0.5至约22重量% 的由式(3)表示的第三重复单元和约4至约42摩尔%的由式(4)表示的第四重复单元,其中R 1,R 2 R 3和R 4独立地表示氢原子或C 1 -C 3 - 烷基,X是包括烷基取代的金刚烷或烷基取代的三环烷烃的封闭基团,Y是包含内酯的封闭基团,Z 1是包含羟基取代的金刚烷的封闭基团, Z 2是含有烷氧基取代的金刚烷的封端基。
摘要:
A photoresist film is formed on an object layer of a semiconductor device by coating the object layer with a photoresist composition including about 7 percent to about 14 percent by weight of a cyclodextrin derivative, about 0.1 percent to about 0.5 percent by weight of a photoacid generator, and a remainder of an organic solvent. The cyclodextrin derivative includes a β-cyclodextrin moiety and at least one alkyl carbonate group.
摘要:
A battery pack including a plurality of battery cell groups including a first battery cell group and a second battery cell group, a first switch that is connected to the first battery cell group, a second switch that is connected to the second battery cell group, and a controller configured to selectively control charging and discharging operations of the first battery cell group and the second battery cell group using the first switch and the second switch.
摘要:
A battery pack includes a bare cell including an electrode assembly arranged within a can having an opening that is sealed by a cap plate, a protective circuit module (PCM) arranged on the cap plate, a lead member connecting the PCM to the cap plate; a coupling member inserted into the cap plate and coupled to the lead member. The coupling member is made out of a different material than that of the cap plate, each of the coupling member and the lead member include nickel. By including such a coupling member, the strength and durability of the weld connecting the cap plate to the PCM is improved and the contact resistance is lowered.
摘要:
A voltage-controlled oscillator robust against power supply includes: a regulating unit configured to maintain a virtual power supply of a VCO core circuit in a stable condition with regard to a reference voltage; and a power supply removal unit including second transistors configured to correspond to respective first transistors of the regulating unit, the power supply removal unit being configured to remove power noise of the virtual power supply by using negative feedback through a closed-circuit loop formed by each of the first and second transistors.