公开(公告)号：US20190139926A1

公开(公告)日：2019-05-09

申请号：US16239670

申请日：2019-01-04

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Chia-Pin Chiu

IPC: H01L23/00 ,  H01L25/16 ,  H01L25/18 ,  H01L23/31 ,  H01L23/50 ,  H01L23/538

CPC classification number: H01L24/25 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/2501 ,  H01L2224/2505 ,  H01L2224/2512 ,  H01L2224/255 ,  H01L2224/73209 ,  H01L2224/81005 ,  H01L2224/92133 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/141 ,  H01L2924/1431 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15747 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00

Abstract: Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BBUL substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.

公开(公告)号：US20180145047A1

公开(公告)日：2018-05-24

申请号：US15873567

申请日：2018-01-17

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Chia-Pin Chiu

IPC: H01L23/00 ,  H01L23/31 ,  H01L25/18 ,  H01L23/50 ,  H01L23/538 ,  H01L25/16 ,  H01L21/56

CPC classification number: H01L24/25 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/2501 ,  H01L2224/2505 ,  H01L2224/2512 ,  H01L2224/255 ,  H01L2224/73209 ,  H01L2224/81005 ,  H01L2224/92133 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/141 ,  H01L2924/1431 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15747 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00

Abstract: Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BBUL substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.

公开(公告)号：US09929119B2

公开(公告)日：2018-03-27

申请号：US15255351

申请日：2016-09-02

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Chia-Pin Chiu

IPC: H01L23/34 ,  H01L23/00 ,  H01L23/538 ,  H01L25/16 ,  H01L23/50 ,  H01L25/18 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L24/25 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/2501 ,  H01L2224/2505 ,  H01L2224/2512 ,  H01L2224/255 ,  H01L2224/73209 ,  H01L2224/81005 ,  H01L2224/92133 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/141 ,  H01L2924/1431 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15747 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00

Abstract: Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BBUL substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.

公开(公告)号：US09686870B2

公开(公告)日：2017-06-20

申请号：US14566198

申请日：2014-12-10

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  John S. Guzek

IPC: H05K3/32 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683

CPC classification number: H05K3/32 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3121 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/82 ,  H01L2221/68372 ,  H01L2224/32245 ,  H01L2224/82001 ,  H01L2224/82002 ,  H01L2224/92244 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1815 ,  H01L2924/18162 ,  Y10T29/49117 ,  Y10T29/4913 ,  H01L2924/00

Abstract: The present disclosure relates to the field of fabricating microelectronic device packages and, more particularly, to microelectronic device packages having bumpless build-up layer (BBUL) designs, wherein at least one secondary device is disposed within the thickness (i.e. the z-direction or z-height) of the microelectronic device of the microelectronic device package.

公开(公告)号：US09437569B2

公开(公告)日：2016-09-06

申请号：US14922425

申请日：2015-10-26

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Chia-Pin Chiu

IPC: H01L23/34 ,  H01L23/00 ,  H01L23/538 ,  H01L25/16 ,  H01L23/50 ,  H01L25/18 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L24/25 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/2501 ,  H01L2224/2505 ,  H01L2224/2512 ,  H01L2224/255 ,  H01L2224/73209 ,  H01L2224/81005 ,  H01L2224/92133 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/141 ,  H01L2924/1431 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15747 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00

Abstract: Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BBUL substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.

公开(公告)号：US09345184B2

公开(公告)日：2016-05-17

申请号：US14126271

申请日：2013-09-27

Applicant: Intel Corporation

Inventor： Sasha Oster ,  Sarah Haney ,  Weng Hong Teh ,  Feras Eid

IPC: H05K9/00 ,  H01L23/552 ,  H01L23/00 ,  B32B37/24 ,  B32B38/10 ,  B81B7/00 ,  B81B7/02 ,  G06F1/18 ,  H05K1/11 ,  H01L21/56

CPC classification number: H05K9/0052 ,  B32B37/24 ,  B32B38/10 ,  B32B2037/243 ,  B32B2457/00 ,  B81B7/0029 ,  B81B7/0032 ,  B81B7/02 ,  B81C1/0023 ,  G06F1/182 ,  H01L21/568 ,  H01L23/552 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2924/1461 ,  H05K1/115 ,  Y10T156/10 ,  H01L2924/00

Abstract: Magnetic field shielding material with high relative permeability incorporated into a build-up package, for example to restrict a field of a magnet integrated with the build-up to a target device configured to operate in the field. In embodiments, a first device is physically coupled to the build-up. In embodiments, a magnetic field shielding material is disposed in contact with the build-up and in proximity to the first device to restrict a magnetic field either to a region occupied by the first device or to a region exclusive of the first device. A field shielding material may be disposed within build-up near a permanent magnet also within the build-up to reduce exposure of another device, such as an IC, to the magnetic field without reducing MEMS device exposure.

Abstract translation: 具有高的相对磁导率的磁场屏蔽材料被并入到积聚封装中，例如将与积聚物集成的磁体的场限制到被配置为在现场操作的目标装置。 在实施例中，第一设备物理地耦合到建立。 在实施例中，磁场屏蔽材料设置成与积层接触并且靠近第一装置，以将磁场限制到由第一装置占据的区域或不包括第一装置的区域。 场屏蔽材料也可以在堆积物内的永磁体附近的堆积内设置，以减少诸如IC之类的其它器件（例如IC）的暴露，而不会降低MEMS器件的暴露。

公开(公告)号：US20160027757A1

公开(公告)日：2016-01-28

申请号：US14875247

申请日：2015-10-05

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Deepak Kulkarni ,  Chia-Pin Chiu ,  Tannaz Harirchian ,  John S. Guzek

IPC: H01L23/00 ,  H01L25/18 ,  H01L23/367

CPC classification number: H01L24/20 ,  H01L21/56 ,  H01L23/34 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/49822 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2224/211 ,  H01L2224/32245 ,  H01L2224/73203 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/00

Abstract: An example includes a die package including a microelectronic die having a lower die surface, an upper die surface parallel to the lower die surface, and a die side, the microelectronic die including an active region and an inactive region. The example optionally includes a heat spreader having a lower heat spreader surface, an upper heat spreader surface parallel to the lower heat spreader surface, and at least one heat spreader side, the heat spreader disposed on the upper surface of the microelectronic die in thermal communication with the inactive region of the die and electrically insulated from the active region. The example optionally includes an encapsulation material encapsulating the die side and the heat spreader side and lower heat spreader surface, the encapsulation material including a lower surface substantially parallel to the die lower surface and an upper surface substantially parallel to the die upper surface.

公开(公告)号：US09190380B2

公开(公告)日：2015-11-17

申请号：US13707159

申请日：2012-12-06

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Chia-Pin Chiu

IPC: H01L21/00 ,  H01L23/00 ,  H01L23/538 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L24/25 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/2501 ,  H01L2224/2505 ,  H01L2224/2512 ,  H01L2224/255 ,  H01L2224/73209 ,  H01L2224/81005 ,  H01L2224/92133 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/141 ,  H01L2924/1431 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15747 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00

Abstract: Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BBUL substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.

公开(公告)号：US20150194406A1

公开(公告)日：2015-07-09

申请号：US14663689

申请日：2015-03-20

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Chia-Pin Chiu

IPC: H01L23/00 ,  H01L25/16 ,  H01L23/31

CPC classification number: H01L24/25 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/2501 ,  H01L2224/2505 ,  H01L2224/2512 ,  H01L2224/255 ,  H01L2224/73209 ,  H01L2224/81005 ,  H01L2224/92133 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/141 ,  H01L2924/1431 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15747 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00

Abstract: Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BBUL substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.

Abstract translation: 这里通常讨论的是包括骰子之间的高密度互连和用于制造和使用这些设备的技术的设备。 在一个或多个实施例中，器件可以包括无冲突构建层（BBUL）衬底，其包括至少部分地嵌入在BBUL衬底中的第一管芯，第一管芯包括第一多个高密度互连焊盘。 第二管芯可以至少部分地嵌入在BBUL衬底中，第二管芯包括第二多个高密度互连焊盘。 高密度互连元件可以嵌入在BBUL基板中，高密度互连元件包括电耦合到第一和第二多个高密度互连焊盘的第三多个高密度互连焊盘。

公开(公告)号：US08912670B2

公开(公告)日：2014-12-16

申请号：US13631205

申请日：2012-09-28

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Deepak Kulkarni ,  Chia-Pin Chiu ,  Tannaz Harirchian ,  John S. Guzek

IPC: H01L23/28 ,  H01L23/10

CPC classification number: H01L24/20 ,  H01L21/56 ,  H01L23/34 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/49822 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2224/211 ,  H01L2224/32245 ,  H01L2224/73203 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/00

Abstract: An example includes a die package including a microelectronic die having a lower die surface, an upper die surface parallel to the lower die surface, and a die side, the microelectronic die including an active region and an inactive region. The example optionally includes a heat spreader having a lower heat spreader surface, an upper heat spreader surface parallel to the lower heat spreader surface, and at least one heat spreader side, the heat spreader disposed on the upper surface of the microelectronic die in thermal communication with the inactive region of the die and electrically insulated from the active region. The example optionally includes an encapsulation material encapsulating the die side and the heat spreader side and lower heat spreader surface, the encapsulation material including a lower surface substantially parallel to the die lower surface and an upper surface substantially parallel to the die upper surface.

Abstract translation: 一个实例包括包括具有下模表面的微电子管芯，平行于下模表面的上模表面和管芯侧的管芯封装，该微电子管芯包括有源区和非活性区。 该实施例可选地包括具有较低散热器表面的散热器，平行于下部散热器表面的上部散热器表面和至少一个散热器侧，散热器布置在热电连接的微电子管芯的上表面上 具有裸片的非活性区域并与活性区电绝缘。 该实施例可选地包括封装模具侧和散热器侧和下部散热器表面的封装材料，该封装材料包括基本上平行于模具下表面的下表面和基本上平行于模具上表面的上表面。