DIE BACKSIDE FILM WITH OVERHANG FOR DIE SIDEWALL PROTECTION

    公开(公告)号:US20230317546A1

    公开(公告)日:2023-10-05

    申请号:US17710670

    申请日:2022-03-31

    CPC classification number: H01L23/367 H01L21/78 H01L23/3135

    Abstract: Embodiments are directed to a device having an overhang portion. In some embodiments, a main body structure of the device comprises an IC die and an exterior surface of the main body structure comprises the overhang portion. The overhang portion adjoins a sidewall structure of the main body structure of the device, which is substantially perpendicular to a backside of the IC die. In some embodiments, the main body structure further comprises a package mold structure, which comprises the overhang portion.

    REUSABLE COMPOSITE STENCIL FOR SPRAY PROCESSES

    公开(公告)号:US20230271445A1

    公开(公告)日:2023-08-31

    申请号:US17680839

    申请日:2022-02-25

    CPC classification number: B41N1/248

    Abstract: Reusable composite stencils for spray processes, particularly for spray processes used in the fabrication of integrated circuit devices, may be fabricated having a permanent core and at least one sacrificial material layer. Thus, in operation, when a predetermined amount of the sacrificial material layer has been ablated away by a material being sprayed in the spray process, the remaining sacrificial material layer may be removed and reapplied to its original thickness. Therefore, the permanent core, which is usually expensive and/or difficult to fabricate, may be repeatedly reused.

    ADDITIVELY MANUFACTURED STRUCTURES FOR HEAT DISSIPATION FROM INTEGRATED CIRCUIT DEVICES

    公开(公告)号:US20210407884A1

    公开(公告)日:2021-12-30

    申请号:US16912432

    申请日:2020-06-25

    Abstract: An integrated circuit assembly may be fabricated to include an integrated circuit device having a backside surface and a backside metallization layer on the backside surface of the integrated circuit device, wherein the backside metallization layer comprises a bond layer on the backside surface of the integrated circuit device, a high thermal conductivity layer on the bond layer, and a cap layer on the high thermal conductivity layer. The bond layer may be a layered stack comprising an adhesion promotion layer on the backside of the integrated circuit device and at one least metal layer. The high thermal conductivity layer may be an additively deposited material having a thermal conductivity greater than silicon, such as copper, silver, aluminum, diamond, silicon carbide, boron nitride, aluminum nitride, and combinations thereof.

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