Abstract:
Low emissivity panels can include a protection layer of silicon nitride on a layer of ZnO on a layer of Zn2SnOx. The low emissivity panels can also include NiNbTiOx as a barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color and light transmission before and after a heat treatment process.
Abstract:
Two layer silver process comprising a silver layer deposited on a doped silver layer can improve the adhesion of the silver layer on a substrate, minimizing agglomeration to provide a high quality silver layer. The doped silver layer can comprise silver and a doping element that has lower enthalpy of formation with oxide than that of silver, leading to better bonding with oxygen in the substrate.
Abstract:
A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.
Abstract:
Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A dielectric layer is formed between the transparent substrate and the reflective layer. The dielectric layer includes niobium, tin, and aluminum.
Abstract:
Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A metal oxide layer is formed between the transparent substrate and the reflective layer. A base layer is formed between transparent substrate and the metal oxide layer. The base layer has a first refractive index. A dielectric layer is formed between the base layer and the metal oxide layer. The dielectric layer has a second refractive index.
Abstract:
Low emissivity panels can include a protection layer of silicon nitride on a layer of ZnO on a layer of Zn2SnOx. The low emissivity panels can also include NiNbTiOx as a barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color and light transmission before and after a heat treatment process.
Abstract:
Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium—25-30%, titanium and aluminum—30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer.
Abstract:
A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include a ternary alloy of nickel, titanium, and niobium, which showed improvements in overall performance than those from binary barrier results. The percentage of nickel can be between 5 and 15 wt %. The percentage of titanium can be between 30 and 50 wt %. The percentage of niobium can be between 40 and 60 wt %.
Abstract:
Methods are provided to use data obtained from a single wavelength ellipsometer to determine the refractive index of materials as a function of wavelength for thin conductive films. The methods may be used to calculate the refractive index spectrum as a function of wavelength for thin films of metals, and conductive materials such as conductive metal nitrides or conductive metal oxides.
Abstract:
Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a first substrate. The first substrate may have a first side and a second side. The low emissivity panels may also include a magnetic fluid layer deposited over the first side of the first substrate and a reflective layer deposited over the second side of the first substrate. The magnetic fluid layer may include magnetic particles. The reflective layer may include a conductive material configured to conduct an electrical current and generate a magnetic field. The magnetic field may be configured to change an orientation of the magnetic particles in the magnetic fluid layer and a transmissivity of the magnetic fluid layer within a visible spectrum. The low emissivity panels may also include a first bus and a second bus deposited along opposite edges of the reflective layer and electrically connected to the reflective layer.