公开(公告)号：US20160268395A1

公开(公告)日：2016-09-15

申请号：US14656371

申请日：2015-03-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JOEL P. de SOUZA ,  BAHMAN HEKMATSHOARTABARI ,  JEEHWAN KIM ,  SIEGFRIED L. MAURER ,  DEVENDRA K. SADANA

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/78 ,  H01L29/423 ,  H01L21/3213

CPC classification number: H01L21/283 ,  A23C9/123 ,  A23C9/1315 ,  A23C11/08 ,  H01L21/2254 ,  H01L21/28114 ,  H01L21/30604 ,  H01L21/3213 ,  H01L21/32131 ,  H01L21/32133 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42376 ,  H01L29/66446 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/78

Abstract: A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.

公开(公告)号：US20160079463A1

公开(公告)日：2016-03-17

申请号：US14946495

申请日：2015-11-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  DAVOOD SHAHRJERDI

IPC: H01L31/077 ,  H01L31/0224

CPC classification number: H01L31/077 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/182 ,  Y02E10/50

Abstract: A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.

Abstract translation: 光伏器件包括具有第一掺杂剂导电性的结晶衬底，交叉指接触点和前表面场结构。 前表面场结构包括在衬底上形成的晶体层和在晶体层上形成的非结晶层。 晶体层和非结晶层掺杂有与衬底相同的掺杂剂导电性的掺杂剂。 还公开了方法。

公开(公告)号：US20150255666A1

公开(公告)日：2015-09-10

申请号：US14718916

申请日：2015-05-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/18 ,  H01L31/20

CPC classification number: H01L31/0465 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1876 ,  H01L31/1888 ,  H01L31/1896 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50

Abstract: A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

公开(公告)号：US20140227825A1

公开(公告)日：2014-08-14

申请号：US13967126

申请日：2013-08-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  DAVOOD SHAHRJERDI

IPC: H01L31/18

CPC classification number: H01L31/077 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/182 ,  Y02E10/50

Abstract: A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.

公开(公告)号：US20140170807A1

公开(公告)日：2014-06-19

申请号：US13718819

申请日：2012-12-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/18

CPC classification number: H01L31/0465 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1876 ,  H01L31/1888 ,  H01L31/1896 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50

Abstract: A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

Abstract translation: 一种用于制造具有集成光伏电池的器件的方法包括在第一处理衬底上支撑半导体衬底并掺杂半导体衬底以形成具有相反导电性的掺杂交替区域。 掺杂层形成在半导体衬底的第一侧上。 在掺杂层上图案化导电材料以形成导电岛，使得导电岛与交替区对准以限定在单片结构上串联连接的多个光伏电池。