公开(公告)号：US20180272045A1

公开(公告)日：2018-09-27

申请号：US15464386

申请日：2017-03-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stacey M. Gifford ,  Huan Hu ,  Emily R. Kinser ,  Roy R. Yu ,  Sufi Zafar

IPC: A61L31/16 ,  A61L31/08 ,  A61L31/10 ,  A61L31/06 ,  B82B3/00

CPC classification number: A61L31/16 ,  A61L27/06 ,  A61L27/306 ,  A61L27/34 ,  A61L27/50 ,  A61L31/06 ,  A61L31/088 ,  A61L31/10 ,  A61L2300/406 ,  A61L2300/606 ,  A61L2400/12 ,  A61L2400/18 ,  A61L2420/02 ,  A61L2420/08 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C1/00206 ,  B82B3/0019 ,  B82B3/0033

Abstract: Aspects include methods of fabricating antibacterial surfaces for medical implant devices including patterning a photoresist layer on a silicon substrate and etching the silicon to generate a plurality of nanopillars. Aspects also include removing the photoresist layer from the structure and coating the plurality of nanopillars with a biocompatible film. Aspects also include a system for preventing bacterial infection associated with medical implants including a thin silicon film including a plurality of nanopillars.

公开(公告)号：US20180143140A1

公开(公告)日：2018-05-24

申请号：US15858472

申请日：2017-12-29

Applicant: International Business Machines Corporation

Inventor： Emily R. Kinser ,  Roy R. Yu

IPC: G01N21/65 ,  G01J3/02 ,  G01J3/18 ,  G01J3/44

CPC classification number: G01N21/658 ,  G01J3/02 ,  G01J3/18 ,  G01J3/44 ,  G01N21/65

Abstract: Surface enhanced Raman spectroscopy is employed to obtain chemical data with respect to cells while electrophysiological data relating to cell membranes is obtained using the patch clamp technique. A SERS-facilitating assembly is coupled to a micropipette and is used in conjunction with a monochromatic light source for generating scattered light. Surface enhanced Raman spectroscopy is employed to obtain the chemical data. Electrophysiological data is obtained using the same micropipette to perform the patch clamp technique.

公开(公告)号：US12002758B2

公开(公告)日：2024-06-04

申请号：US17453516

申请日：2021-11-04

Applicant: International Business Machines Corporation

Inventor： Ruilong Xie ,  Takeshi Nogami ,  Roy R. Yu ,  Balasubramanian Pranatharthiharan ,  Chih-Chao Yang

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/50 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L23/5286 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/5226 ,  H01L28/60

Abstract: A method of fabricating a semiconductor device comprises forming backside power rails in a dielectric layer arranged above a backside interlayer dielectric (BILD) layer or a semiconductor layer, forming a trench that extends through the BILD layer or the semiconductor layer and partly through the dielectric layer between the backside power rails, depositing a plurality of layers to form a backside metal-insulator-metal (MIM) capacitor in the trench, and forming a first contact to a first metal layer of the plurality of layers. Forming the first contact comprises forming first recesses in a second metal layer of the plurality of layers, and filling the first recesses with an insulative material. The method further comprises forming a second contact to the second metal layer. Forming the second contact comprises forming second recesses in the first metal layer, and filling the second recesses with the insulative material.

公开(公告)号：US20230094466A1

公开(公告)日：2023-03-30

申请号：US17486840

申请日：2021-09-27

Applicant: International Business Machines Corporation

Inventor： Julien Frougier ,  Nicolas Loubet ,  Sagarika Mukesh ,  PRASAD BHOSALE ,  Ruilong Xie ,  Andrew Herbert Simon ,  Takeshi Nogami ,  Lawrence A. Clevenger ,  Roy R. Yu ,  Andrew M. Greene ,  Daniel Charles Edelstein

IPC: H01L29/786 ,  H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8234

Abstract: A semiconductor structure includes a substrate and a first field effect transistor (FET) formed on the substrate; the first FET includes a first FET first source-drain region, a first FET second source-drain region, a first FET gate between the first and second source-drain regions, and a first FET channel region adjacent the first FET gate and between the first FET first and second source-drain regions. Also included is a buried power rail, buried in the substrate, having a top at a level lower than the first FET channel region, and having buried power rail sidewalls. A first FET shared contact is electrically interconnected with the buried power rail and the first FET second source-drain region, and a first FET electrically isolating region is adjacent the buried power rail sidewalls and separates the buried power rail from the substrate.

公开(公告)号：US11458717B2

公开(公告)日：2022-10-04

申请号：US16040429

申请日：2018-07-19

Applicant: International Business Machines Corporation

Inventor： Roy R. Yu ,  Wilfried Haensch

IPC: B32B37/02 ,  H01L23/473 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00 ,  B32B37/12 ,  B32B38/18 ,  H01L29/06

Abstract: A 4D device comprises a 2D multi-core logic and a 3D memory stack connected through the memory stack sidewall using a fine pitch T&J connection. The 3D memory in the stack is thinned from the original wafer thickness to no remaining Si. A tongue and groove device at the memory wafer top and bottom surfaces allows an accurate stack alignment. The memory stack also has micro-channels on the backside to allow fluid cooling. The memory stack is further diced at the fixed clock-cycle distance and is flipped on its side and re-assembled on to a template into a pseudo-wafer format. The top side wall of the assembly is polished and built with BEOL to fan-out and use the T&J fine pitch connection to join to the 2D logic wafer. The other side of the memory stack is polished, fanned-out, and bumped with C4 solder. The invention also comprises a process for manufacturing the device. In another aspect, the invention comprises a 4D process and device for over 50× greater than 2D memory density per die and an ultra high density memory.

公开(公告)号：US11169399B2

公开(公告)日：2021-11-09

申请号：US16213419

申请日：2018-12-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Emily R. Kinser ,  John U. Knickerbocker ,  Roy R. Yu

IPC: G02C7/08 ,  G02C7/04 ,  B29D11/00

Abstract: Lenses and methods for adjusting the focus of a lens include dividing multiple light sensors in a lens into four quadrants. A position of the lens relative to occlusion along a top and bottom edge of the lens is determined based on numbers of bits in respective bit sequences from light sensors in respective regions of the lens. An optimal focal length for the lens is determined based on the position of the lens. The focal length of the lens is adjusted to match the optimal focal length.

公开(公告)号：US10752932B2

公开(公告)日：2020-08-25

申请号：US15671938

申请日：2017-08-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Hariklia Deligianni ,  Bruce B. Doris ,  Steven J. Holmes ,  Qinghuang Lin ,  Roy R. Yu

IPC: C12Q1/00 ,  G01N27/327 ,  G01N33/94

Abstract: Embodiments of the present invention are directed to a semiconductor device. A non-limiting example of the semiconductor device includes a semiconductor substrate. The semiconductor device also includes a plurality of metal nanopillars formed on the substrate. The semiconductor device also includes an amperometric sensor associated with one of the plurality of nanopillars, wherein the amperometric sensor is selective to an enzyme-active neurotransmitter. The semiconductor device also includes a resistivity sensor associated with a pair of nanopillars, wherein the resistivity sensor is selective to an analyte.

公开(公告)号：US10694951B2

公开(公告)日：2020-06-30

申请号：US15293267

申请日：2016-10-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Emily R. Kinser ,  John U. Knickerbocker ,  Roy R. Yu

IPC: A61B5/00 ,  A61N5/06 ,  A61N1/36 ,  A61N5/067

Abstract: Surface enhanced Raman spectroscopy is employed to obtain chemical data with respect to body tissue and cells. The chemical environments of stimulation implants and drug-delivery catheters are spectroscopically monitored in real time using an implantable probe. The probe includes a surface enhancer that facilitates surface enhanced Raman spectroscopy in opposing relation to an array of optical fibers. Light emitted by the optical fibers can be employed for chemical detection and/or tissue stimulation. Wavelength and optical power are selected based on whether the probe is employed for such detection or stimulation. Fabrication of a probe assembly that enables surface enhanced Raman spectroscopy is further disclosed.

公开(公告)号：US10694950B2

公开(公告)日：2020-06-30

申请号：US15293261

申请日：2016-10-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Emily R. Kinser ,  John U. Knickerbocker ,  Roy R. Yu

IPC: A61B5/00

Abstract: Surface enhanced Raman spectroscopy is employed to obtain chemical data with respect to body tissue and cells. The chemical environments of stimulation implants and drug-delivery catheters are spectroscopically monitored in real time using an implantable probe. The probe includes a surface enhancer that facilitates surface enhanced Raman spectroscopy in opposing relation to an array of optical fibers. Light emitted by the optical fibers can be employed for chemical detection and/or tissue stimulation. Wavelength and optical power are selected based on whether the probe is employed for such detection or stimulation.

公开(公告)号：US20200009368A1

公开(公告)日：2020-01-09

申请号：US16573533

申请日：2019-09-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Steven J. Holmes ,  Qinghuang Lin ,  Emily R. Kinser ,  Nathan P. Marchack ,  Roy R. Yu

IPC: A61N1/04 ,  A61K38/18 ,  A61B5/00 ,  B82Y15/00

Abstract: A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.