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公开(公告)号：US09742400B2
公开(公告)日：2017-08-22
申请号：US14705518
申请日：2015-05-06
Applicant: Infineon Technologies AG
Inventor： Winfried Bakalski , Anton Steltenpohl , Hans Taddiken
IPC: H03K17/693 , H03K17/687 , H03K17/16
CPC classification number: H03K17/693
Abstract: In accordance with an embodiment, a radio frequency (RF) switching circuit includes a plurality of series connected RF switch cells comprising a load path and a control node, a plurality of first gate resistors coupled between control nodes of adjacent RF switch cells, and an input resistor having a first end coupled to a control node of one of the plurality of RF switch cells and a second end configured to an output of a switch driver. Each of the plurality of series connected RF switch cells includes a switch transistor.
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公开(公告)号：US09659877B2
公开(公告)日：2017-05-23
申请号：US13967547
申请日：2013-08-15
Applicant: Infineon Technologies AG
Inventor： Winfried Bakalski , Bernd Eisener , Uwe Seidel , Markus Zannoth
IPC: H01L23/552 , H01L23/522 , H01L23/60
CPC classification number: H01L23/552 , H01L23/5225 , H01L23/60 , H01L2924/0002 , H01L2924/00
Abstract: One aspect of the invention relates to a shielding device for shielding from electromagnetic radiation, including a shielding base element, a shielding cover element and a shielding lateral element for electrically connecting the base element to the cover element in such that a circuit part to be shielded is arranged within the shielding elements. Since at least one partial section of the shielding elements includes a semiconductor material, a shielding device can be realized completely and cost-effectively in an integrated circuit.
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公开(公告)号：US20170126180A1
公开(公告)日：2017-05-04
申请号：US14932390
申请日：2015-11-04
Applicant: Infineon Technologies AG
Inventor： Winfried Bakalski
CPC classification number: H03F1/0205 , H03F1/0261 , H03F1/0277 , H03F1/223 , H03F1/304 , H03F3/193 , H03F3/2171 , H03F3/72 , H03F2200/294 , H03F2200/451
Abstract: A CMOS cascode amplifier comprises a cascode circuit comprising a plurality of branches in parallel, each branch comprising a first transistor and a second switchable transistor connected in series forming a cascode pair, wherein the cascode circuit is configured to amplify an input signal. The CMOS cascode amplifier further comprises a bias circuit configured to bias the cascode circuit by providing a bias signal to the first transistor in each of the plurality of the branches in the cascode circuit. In addition, the CMOS cascode amplifier comprises a switching control circuit configured to control a quiescent current in the cascode circuit based on selectively activating the plurality of branches by providing a switching control signal that switches on the second switchable transistor in the one or more activated branches.
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公开(公告)号：US09641201B2
公开(公告)日：2017-05-02
申请号：US14264986
申请日：2014-04-29
Applicant: Infineon Technologies AG
Inventor： Winfried Bakalski , Werner Simbuerger
CPC classification number: H04B1/006 , H04B1/0458 , H04B1/18 , H04W88/06
Abstract: In accordance with an embodiment, a radio frequency integrated circuit (RFIC) includes an adjustable capacitance coupled to an input terminal of the RFIC, and a first single-pole multiple-throw (SPMT) radio frequency (RF) switch having an input coupled to the adjustable capacitance and a plurality of output nodes coupled to a corresponding plurality of second output terminals of the RFIC.
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公开(公告)号：US09584097B2
公开(公告)日：2017-02-28
申请号：US14264937
申请日：2014-04-29
Applicant: Infineon Technologies AG
Inventor： Winfried Bakalski
IPC: H03H11/28 , H03K17/687 , H03J5/24
CPC classification number: H03J5/244 , H03H11/28 , H03J2200/10 , H03K17/687
Abstract: In accordance with an embodiment, a switchable capacitance circuit includes a plurality of capacitance-switch cells that each have a capacitance circuit having a capacitance between a first terminal and a second terminal of the capacitance circuit, and a semiconductor switching circuit including a first terminal coupled to the first terminal of the capacitance circuit, a plurality of series connected radio-frequency (RF) switch cells having a load path and a common node. Each of the plurality of series connected RF switch cells has a switch transistor and a gate resistor having a first end coupled to a gate of the switch transistor and a second end coupled to the common node. The switchable capacitance circuit also includes a resistance circuit having a first end coupled to the common node and a second end coupled to a control node.
Abstract translation: 根据实施例，可切换电容电路包括多个电容开关单元，每个电容开关单元具有在电容电路的第一端子和第二端子之间具有电容的电容电路，以及半导体开关电路，包括：第一端子耦合 连接到电容电路的第一端子，具有负载路径和公共节点的多个串联连接的射频（RF）开关单元。 多个串联连接的RF开关单元中的每一个具有开关晶体管和栅极电阻器，其具有耦合到开关晶体管的栅极的第一端和耦合到公共节点的第二端。 可切换电容电路还包括具有耦合到公共节点的第一端和耦合到控制节点的第二端的电阻电路。
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Patent Agency Ranking
公开(公告)号：US20150130556A1
公开(公告)日：2015-05-14
申请号：US14080132
申请日：2013-11-14
Applicant: Infineon Technologies AG
Inventor： Winfried Bakalski
CPC classification number: H01L27/0629 , H01L23/5223 , H01L23/5227 , H01L27/0617 , H01L27/0688 , H01L2924/0002 , H01L2924/00
Abstract: According to a first aspect embodiments provide a transistor including at least one gate region between at least one drain region and at least one source region, wherein a ratio between a width of the gate region and a length of the gate region exceeds 300.
Abstract translation: 根据第一方面，实施例提供一种晶体管，其包括至少一个漏极区域和至少一个源极区域之间的至少一个栅极区域，其中栅极区域的宽度和栅极区域的长度之间的比率超过300。
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公开(公告)号：US20150002146A1
公开(公告)日：2015-01-01
申请号：US13931092
申请日：2013-06-28
Applicant: Infineon Technologies AG
Inventor： Valentyn Solomko , Winfried Bakalski
IPC: G01R33/09
Abstract: In accordance with an embodiment, a circuit includes a magnetic transformer having a first winding coupled between a first signal node and a second signal node, and a second winding coupled between a first reference node and a current measurement node. A phase shift network is coupled between the second node and a voltage measurement node, and the circuit is configured to indicate an impedance matching condition based on an amplitude difference and a phase difference between the voltage measurement node and the current measurement node.
Abstract translation: 根据实施例，电路包括磁变压器，其具有耦合在第一信号节点和第二信号节点之间的第一绕组以及耦合在第一参考节点和当前测量节点之间的第二绕组。 相移网络耦合在第二节点和电压测量节点之间，并且电路被配置为基于电压测量节点和当前测量节点之间的振幅差和相位差来指示阻抗匹配条件。
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公开(公告)号：US11515302B2
公开(公告)日：2022-11-29
申请号：US16879188
申请日：2020-05-20
Applicant: Infineon Technologies AG
Inventor： Winfried Bakalski , Andreas Baenisch
Abstract: A circuit includes a switch coupled between a configuration terminal and an internal node. In a method of operation, the configuration terminal of the circuit is coupled to an internal node during a configuration phase and decoupled from the internal node during normal operation.
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公开(公告)号：US20200373291A1
公开(公告)日：2020-11-26
申请号：US16879188
申请日：2020-05-20
Applicant: Infineon Technologies AG
Inventor： Winfried Bakalski , Andreas Baenisch
Abstract: A circuit includes a switch coupled between a configuration terminal and an internal node. In a method of operation, the configuration terminal of the circuit is coupled to an internal node during a configuration phase and decoupled from the internal node during normal operation.
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公开(公告)号：US20200321957A1
公开(公告)日：2020-10-08
申请号：US16872829
申请日：2020-05-12
Applicant: Infineon Technologies AG
Inventor： Semen Syroiezhin , Pablo Araujo Do Nascimento , Winfried Bakalski , Andrea Cattaneo , Jochen Essel , Oguzhan Oezdamar , Johannes Klaus Rimmelspacher , Valentyn Solomko , Danial Tayari , Andreas Wickmann
Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.
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