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21.发明申请Semiconductor Device with a Laterally Varying Doping Profile, and Method for Manufacturing Thereof 审中-公开具有不同变化的掺杂曲线的半导体器件及其制造方法公开(公告)号：US20170040317A1
公开(公告)日：2017-02-09
申请号：US15226338
申请日：2016-08-02
发明人： Stefan Tegen , Martin Bartels , Marko Lemke , Ralf Rudolf , Rolf Weis
IPC分类号： H01L27/088 , H01L21/027 , H01L21/266 , H01L21/265 , H01L29/10 , H01L21/8234
CPC分类号： H01L27/0883 , H01L21/2652 , H01L21/266 , H01L21/823412 , H01L21/823431 , H01L27/0886 , H01L29/086 , H01L29/0865 , H01L29/66659 , H01L29/7397 , H01L29/7398 , H01L29/7809 , H01L29/781 , H01L29/7835 , H03K17/063 , H03K17/102
摘要： A semiconductor device includes a semiconductor substrate having a first side. At least a first doping region is formed in the semiconductor substrate. The first doping region has a laterally varying doping dosage and/or a laterally varying implantation depth.
摘要翻译： 半导体器件包括具有第一侧的半导体衬底。 至少在半导体衬底中形成第一掺杂区域。 第一掺杂区具有横向变化的掺杂剂量和/或横向变化的注入深度。
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公开(公告)号：US20160343577A1
公开(公告)日：2016-11-24
申请号：US15229632
申请日：2016-08-05
发明人： Kurt Sorschag , Daniel Sarlette , Felix Braun , Marcel Heller , Dieter Kaiser , Ingo Meusel , Marko Lemke , Anton Mauder , Helmut Strack
IPC分类号： H01L21/306 , H01L21/02 , H01L29/06 , H01L29/78
CPC分类号： H01L21/30604 , H01L21/02532 , H01L21/02658 , H01L21/306 , H01L21/311 , H01L29/0657 , H01L29/66348 , H01L29/66734 , H01L29/66795 , H01L29/7827
摘要： A method for forming a semiconductor device includes providing a semiconductor substrate having an upper side and comprising, in a vertical cross-section substantially orthogonal to the upper side, a plurality of semiconductor mesas of a first monocrystalline semiconductor material which are spaced apart from each other by sacrificial layers selectively etchable with respect to the first monocrystalline semiconductor material and arranged in trenches extending from the upper side into the semiconductor substrate, forming on the semiconductor mesas a support structure mechanically connecting the semiconductor mesas, at least partly replacing the sacrificial layers while the semiconductor mesas remain mechanically connected via the support structure, and at least partly removing the support structure.
摘要翻译： 一种形成半导体器件的方法包括提供具有上侧的半导体衬底，并且在与上侧基本正交的垂直截面中包括彼此间隔开的第一单晶半导体材料的多个半导体台面 通过相对于第一单晶半导体材料可选择性地蚀刻的牺牲层并且布置在从上侧延伸到半导体衬底的沟槽中，在半导体台面上形成机械连接半导体台面的支撑结构，至少部分地替代牺牲层，同时 半导体台面通过支撑结构保持机械连接，并且至少部分地去除支撑结构。
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公开(公告)号：US20160307804A1
公开(公告)日：2016-10-20
申请号：US15194684
申请日：2016-06-28
发明人： Stefan Tegen , Marko Lemke
IPC分类号： H01L21/8234 , H01L21/308 , H01L21/027 , H01L21/02 , H01L21/3065
CPC分类号： H01L21/823431 , H01L21/0223 , H01L21/02255 , H01L21/0273 , H01L21/28506 , H01L21/3065 , H01L21/308 , H01L21/3081 , H01L21/3083 , H01L21/823437 , H01L21/823462 , H01L21/823821 , H01L21/845 , H01L29/66795
摘要： A method for processing a carrier may include: forming a plurality of structure elements at least one of over and in a carrier, wherein at least two adjacent structure elements of the plurality of structure elements have a first distance between each other; depositing a first layer over the plurality of structure elements having a thickness which equals the first distance between the at least two adjacent structure elements; forming at least one additional layer over the first layer, wherein the at least one additional layer covers an exposed surface of the first layer; removing a portion of the at least one additional layer to expose the first layer partially; and partially removing the first layer, wherein at least one sidewall of the at least two adjacent structure elements is partially exposed.
摘要翻译： 一种用于处理载体的方法可以包括：形成多个结构元件，所述结构元件至少在载体中和载体中的一个上，其中所述多个结构元件中的至少两个相邻的结构元件具有彼此之间的第一距离; 在所述多个结构元件上沉积具有等于所述至少两个相邻结构元件之间的第一距离的厚度的第一层; 在所述第一层上形成至少一个附加层，其中所述至少一个附加层覆盖所述第一层的暴露表面; 去除所述至少一个附加层的一部分以部分暴露所述第一层; 并且部分地去除所述第一层，其中所述至少两个相邻结构元件的至少一个侧壁部分地暴露。
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24.发明申请SEMICONDUCTOR COMPONENT WITH FIELD ELECTRODE BETWEEN ADJACENT SEMICONDUCTOR FINS AND METHOD FOR PRODUCING SUCH A SEMICONDUCTOR COMPONENT 有权具有相邻半导体栅之间的场电极的半导体元件和用于生产这样的半导体元件的方法公开(公告)号：US20160155809A1
公开(公告)日：2016-06-02
申请号：US14953103
申请日：2015-11-27
发明人： Stefan Tegen , Marko Lemke , Rolf Weis
IPC分类号： H01L29/40 , H01L29/78 , H01L29/04 , H01L29/423 , H01L21/306 , H01L21/31 , H01L21/283 , H01L21/311 , H01L29/808 , H01L29/66
CPC分类号： H01L21/283 , H01L21/823487 , H01L27/0883 , H01L29/045 , H01L29/0696 , H01L29/407 , H01L29/42376 , H01L29/66734 , H01L29/66909 , H01L29/7397 , H01L29/7813 , H01L29/8083
摘要： A semiconductor component includes semiconductor fins formed between a base plane and a main surface of a semiconductor body. Each semiconductor fin includes a source region formed between the main surface and a channel/body region, and a drift zone formed between the channel/body region and the base plane. The semiconductor component further includes gate electrode structures on two mutually opposite sides of each channel/body region, and a field electrode structure between mutually adjacent ones of the semiconductor fins. Each field electrode structure is separated from the drift zone by a field dielectric and extends from the main surface as far as the base plane. The gate electrode structures assigned to the mutually adjacent semiconductor fins enclose an upper portion of the corresponding field electrode structure from two sides.
摘要翻译： 半导体部件包括形成在基板和半导体主体的主表面之间的半导体散热片。 每个半导体鳍片包括形成在主表面和沟道/体区之间的源区，以及形成在沟道/本体区与基面之间的漂移区。 半导体部件还包括在每个通道/主体区域的两个彼此相对的侧上的栅电极结构以及相互相邻的半导体鳍片之间的场电极结构。 每个场电极结构通过场电介质与漂移区分离，并从主表面延伸到基底平面。 分配给相邻的半导体翅片的栅电极结构从两侧包围相应的场电极结构的上部。
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公开(公告)号：US08980714B2
公开(公告)日：2015-03-17
申请号：US13934630
申请日：2013-07-03
发明人： Marko Lemke , Rolf Weis , Stefan Tegen
IPC分类号： H01L21/336 , H01L29/78 , H01L29/66
CPC分类号： H01L29/7813 , H01L21/823437 , H01L21/823487 , H01L29/0696 , H01L29/41758 , H01L29/4236 , H01L29/42376 , H01L29/66553 , H01L29/66621 , H01L29/66734 , H01L29/78
摘要： A method of manufacturing a semiconductor device includes introducing at least a first and a second trench pattern from a first surface into a semiconductor substrate. An array isolation region including a portion of the semiconductor substrate separates the first and second trench patterns. At least the first trench pattern includes array trenches and a contact trench which is structurally connected with the array trenches. A buried gate electrode structure is provided in a lower section of the first and second trench patterns in a distance to the first surface. A connection plug is provided between the first surface and the gate electrode structure in the contact trench. Gate electrodes of semiconductor switching devices integrated in the same semiconductor portion can be reliably separated and internal gate electrodes can be effectively connected in a cost-effective manner.
摘要翻译： 制造半导体器件的方法包括将至少第一沟槽图案和第二沟槽图案从第一表面引入到半导体衬底中。 包括半导体衬底的一部分的阵列隔离区域分离第一和第二沟槽图案。 至少第一沟槽图形包括阵列沟槽和与阵列沟槽结构连接的接触沟槽。 掩模栅电极结构设置在第一和第二沟槽图案的与第一表面相距一定距离的下部。 在接触沟槽中的第一表面和栅电极结构之间提供连接插头。 集成在同一半导体部分的半导体开关器件的栅极电极可以可靠地分离，并且可以以成本有效的方式有效地连接内部栅极电极。
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26.发明申请Apparatus, Storage Device, Switch and Methods, Which Include Microstructures Extending from a Support 有权装置，存储装置，开关和方法，其中包括从支架延伸的微结构公开(公告)号：US20140112067A1
公开(公告)日：2014-04-24
申请号：US13656631
申请日：2012-10-19
发明人： Marko Lemke , Stefan Tegen
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025
摘要： An apparatus has a support and a plurality of bendable and conductive microstructures extending from the support. Two adjacent microstructures of the plurality of microstructures define a detectable first state if they are not bent such that end portions thereof, which are distal with respect to the support, do not touch each other, and the two adjacent microstructures of the plurality of microstructures define a detectable second state if they are bent such that the end portions thereof, which are distal with respect to the support, touch each other and are fixed to each other.
摘要翻译： 一种装置具有从支撑件延伸的支撑件和多个可弯曲和导电的微结构。 多个微结构的两个相邻微结构如果它们没有被弯曲，则其可以确定可检测的第一状态，使得其相对于支撑件远端的端部不彼此接触，并且多个微结构中的两个相邻微结构限定 如果它们被弯曲使得其相对于支撑件远端的端部彼此接触并彼此固定，则可检测的第二状态。
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公开(公告)号：US10424819B2
公开(公告)日：2019-09-24
申请号：US15463265
申请日：2017-03-20
摘要： A semiconductor battery includes a substrate, a battery anode semiconductor material arranged in or over the substrate, a battery cathode material arranged in or over the substrate and a battery electrolyte disposed between the battery anode semiconductor material and the battery cathode material. An electrically insulating encapsulant has a first face and a second face. The substrate is at least partly embedded in the encapsulant. An anode electrode is electrically connected to the battery anode semiconductor material and is disposed over the second face of the encapsulant. A cathode electrode is electrically connected to the battery cathode material and is disposed over the first face of the encapsulant.
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28.发明授权公开(公告)号：US10290735B2
公开(公告)日：2019-05-14
申请号：US15855563
申请日：2017-12-27
发明人： Stefan Tegen , Marko Lemke , Rolf Weis
IPC分类号： H01L29/45 , H01L29/739 , H01L29/06 , H01L29/10 , H01L29/66 , H01L29/78 , H01L27/088 , H01L29/417 , H01L21/8234 , H01L29/40
摘要： A method of manufacturing a semiconductor device includes: forming a doped region in a semiconductor substrate at a first distance to a main surface plane of the semiconductor substrate, wherein the doped region is a first section of a semiconductor column extending from the main surface plane into the semiconductor substrate; forming an insulator structure surrounding at least a second section of the semiconductor column between the main surface plane and the first section in planes parallel to the main surface plane; removing the second section of the semiconductor column; and forming a contact structure extending from the main surface plane to the doped region, wherein the contact structure includes a fill structure and a contact layer, the contact layer formed from a metal semiconductor alloy and directly adjoining the doped region and the fill structure formed from a metal and/or a conductive metal compound.
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公开(公告)号：US09984930B2
公开(公告)日：2018-05-29
申请号：US15194684
申请日：2016-06-28
发明人： Stefan Tegen , Marko Lemke
IPC分类号： H01L21/285 , H01L21/8234 , H01L21/8238 , H01L21/308 , H01L29/66 , H01L21/02 , H01L21/027 , H01L21/3065 , H01L21/84
CPC分类号： H01L21/823431 , H01L21/0223 , H01L21/02255 , H01L21/0273 , H01L21/28506 , H01L21/3065 , H01L21/308 , H01L21/3081 , H01L21/3083 , H01L21/823437 , H01L21/823462 , H01L21/823821 , H01L21/845 , H01L29/66795
摘要： A method for processing a carrier may include: forming a plurality of structure elements at least one of over and in a carrier, wherein at least two adjacent structure elements of the plurality of structure elements have a first distance between each other; depositing a first layer over the plurality of structure elements having a thickness which equals the first distance between the at least two adjacent structure elements; forming at least one additional layer over the first layer, wherein the at least one additional layer covers an exposed surface of the first layer; removing a portion of the at least one additional layer to expose the first layer partially; and partially removing the first layer, wherein at least one sidewall of the at least two adjacent structure elements is partially exposed.
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公开(公告)号：US20180047582A1
公开(公告)日：2018-02-15
申请号：US15671228
申请日：2017-08-08
发明人： Marko Lemke , Alfred Vater , Carsten Moritz
IPC分类号： H01L21/311 , H01L21/308 , H01L29/66 , B81C1/00 , H01L29/06 , H01L29/08 , H01L29/10 , H01L21/306 , H01L29/78
摘要： A method of manufacturing a semiconductor device includes forming an etching mask over a semiconductor body, forming a plurality of trenches in the semiconductor body to define a plurality of protruding semiconductor portions between adjacent trenches, and forming a protection layer in contact with a semiconductor material of the protruding semiconductor portions. The method further includes performing a wet etching step to remove portions of the etching mask and, thereafter, treating the semiconductor body with a mixture of hydrofluoric acid and ethylene glycol and bringing the semiconductor material of sidewalls of the plurality of protruding semiconductor portions into contact with the mixture of hydrofluoric acid and ethylene glycol.
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