公开(公告)号：US10971416B2

公开(公告)日：2021-04-06

申请号：US16526497

申请日：2019-07-30

Applicant: Intel Corporation

Inventor： Krishna Bharath ,  Mathew J. Manusharow ,  Adel A. Elsherbini ,  Mihir K. Roy ,  Aleksandar Aleksov ,  Yidnekachew S. Mekonnen ,  Javier Soto Gonzalez ,  Feras Eid ,  Suddhasattwa Nad ,  Meizi Jiao

IPC: H01L23/52 ,  H01L23/12 ,  H01L23/48 ,  H01L21/48 ,  H01L23/498

Abstract: Embodiments of the invention include an electrical package and methods of forming the package. In one embodiment, the electrical package may include a first package layer. A plurality of signal lines with a first thickness may be formed on the first package layer. Additionally, a power plane with a second thickness may be formed on the first package layer. According to an embodiment, the second thickness is greater than the first thickness. Embodiments of the invention may form the power plane with a lithographic patterning and deposition process that is different than the lithographic patterning and deposition process used to form the plurality of signal lines. In an embodiment, the power plane may be formed concurrently with vias that electrically couple the signal lines to the next routing layer.

公开(公告)号：US20210036618A1

公开(公告)日：2021-02-04

申请号：US16642268

申请日：2017-09-28

Applicant: Intel Corporation

Inventor： WILLIAM J. Lambert ,  Kaladhar Radhakrishnan ,  Beomseok Choi ,  Krishna Bharath ,  Michael J. Hill

IPC: H02M3/158 ,  G01R19/165 ,  G05F1/46 ,  H01F21/02

Abstract: An adjustable inductance system includes a plurality of inductor modules coupled to a corresponding plurality of loads and a pool of at least one floating inductor module that may be coupled in parallel with any one of the plurality of inductor modules. A control circuit monitors the current drawn through the inductor module by the load. If current draw exceeds a threshold, the control circuit couples a floating inductor module to the load. Using the current drawn by the load, the control circuit determines an appropriate inductance value and determines an appropriate inductor configuration for the inductor module, the floating inductor module, or both the inductor module and the floating inductor module to achieve the determined inductance value. The control circuit causes switching elements to transition to a state or position to achieve the inductor configuration.

公开(公告)号：US20200006305A1

公开(公告)日：2020-01-02

申请号：US16022511

申请日：2018-06-28

Applicant: Intel Corporation

Inventor： William J. Lambert ,  Krishna Bharath ,  Beomseok Choi ,  Robert Sankman

IPC: H01L25/18 ,  H01L25/065 ,  H02M1/08

Abstract: A semiconductor package includes a first die and a second die. The first die includes a first plurality of compound semiconductor transistors, and where the first die includes a first section of a Power Management Circuitry (PMC). The second die includes a second plurality of transistors that are arranged as a plurality of CMOS (Complementary metal-oxide-semiconductor) circuitries, and where the second die includes a second section of the PMC. The PMC includes a power converter that includes: a plurality of power switches, a plurality of driver circuitries to correspondingly control the plurality of power switches, and a controller to control the driver circuitries. The first section of the PMC in the first die includes the plurality of power switches, and the second section of the PMC in the second die includes at least a part of the controller.

公开(公告)号：US20180101207A1

公开(公告)日：2018-04-12

申请号：US15695947

申请日：2017-09-05

Applicant: INTEL CORPORATION

Inventor： Krishna Bharath ,  Srikrishnan Venkataraman ,  William J. Lambert ,  Michael J. Hill ,  Alexander Slepoy ,  Dong Zhong ,  Kaladhar Radhakrishnan ,  Hector A. Aguirre Diaz ,  Jonathan P. Douglas

IPC: G06F1/26

CPC classification number: G06F1/26 ,  G06F1/3203 ,  H01L23/645 ,  H02J1/00 ,  H02M1/14 ,  H02M3/158 ,  H02M3/1584 ,  H02M2001/008 ,  H02M2003/1586

Abstract: Described is an apparatus which comprises: a first voltage regulator (VR) coupled to first one or more inductors, the first VR is to provide power to a first power domain; and a second VR coupled to second one or more inductors at least one of which is inductively coupled to at least one of the first one or more inductors, the second VR is to provide power to a second power domain separate from the first power domain, wherein there is a non-zero phase angle offset between switching transistors of the first VR relative to the second VR.

公开(公告)号：US12199018B2

公开(公告)日：2025-01-14

申请号：US17025771

申请日：2020-09-18

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Krishna Bharath ,  Han Wui Then ,  Kimin Jun ,  Aleksandar Aleksov ,  Mohammad Enamul Kabir ,  Shawna M. Liff ,  Johanna M. Swan ,  Feras Eid

IPC: H01L23/49 ,  H01L23/00 ,  H01L23/532 ,  H01L23/538 ,  H05K1/11

Abstract: Disclosed herein are microelectronic assemblies including direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first subregion and a second subregion, and the first subregion has a greater metal density than the second subregion. In some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first metal contact and a second metal contact, the first metal contact has a larger area than the second metal contact, and the first metal contact is electrically coupled to a power/ground plane of the first microelectronic component.

公开(公告)号：US12154710B2

公开(公告)日：2024-11-26

申请号：US17025537

申请日：2020-09-18

Applicant: Intel Corporation

Inventor： Anuj Modi ,  Huong Do ,  William J. Lambert ,  Krishna Bharath ,  Harish Krishnamurthy

IPC: H01F27/24 ,  H01F30/06

Abstract: Embodiments disclosed herein include power transformers for microelectronic devices. In an embodiment, a power transformer comprises a magnetic core that is a closed loop with an inner dimension and an outer dimension, and a primary winding around the magnetic core. In an embodiment, the primary winding has a first number of first turns connected in series around the magnetic core. In an embodiment, a secondary winding is around the magnetic core, and the secondary winding has a second number of second turns around the magnetic core. In an embodiment, individual ones of the second turns comprise a plurality of secondary segments connected in parallel.

公开(公告)号：US20230187407A1

公开(公告)日：2023-06-15

申请号：US17548304

申请日：2021-12-10

Applicant: Intel Corporation

Inventor： Carleton L. Molnar ,  Adel A. Elsherbini ,  Tanay Karnik ,  Shawna M. Liff ,  Robert J. Munoz ,  Julien Sebot ,  Johanna M. Swan ,  Nevine Nassif ,  Gerald S. Pasdast ,  Krishna Bharath ,  Neelam Chandwani ,  Dmitri E. Nikonov

IPC: H01L25/065 ,  H01L23/48 ,  H01L23/00

CPC classification number: H01L25/0652 ,  H01L23/481 ,  H01L24/08 ,  H01L24/20 ,  H01L2224/2101 ,  H01L2224/08147 ,  H01L2924/37001 ,  H01L2924/1427

Abstract: A microelectronic assembly is provided comprising: a first plurality of integrated circuit (IC) dies in a first layer; a second plurality of IC dies in a second layer between the first layer and a third layer; and a third plurality of IC dies in the third layer. In some embodiments, the second plurality of IC dies comprises IC dies in an array of rows and columns, each IC die of the second plurality of IC dies is coupled to more than one IC die of the first plurality of IC dies, and the third plurality of IC dies is to provide electrical coupling between adjacent ones of the second plurality of IC dies.

公开(公告)号：US20230163098A1

公开(公告)日：2023-05-25

申请号：US17531374

申请日：2021-11-19

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  William J. Lambert ,  Krishna Bharath ,  Shawna M. Liff ,  Nicolas Butzen ,  Georgios Dogiamis ,  Gerald S. Pasdast ,  Vivek Kumar Rajan ,  Sathya Narasimman Tiagaraj ,  Timothy Francis Schmidt

IPC: H01L25/065

CPC classification number: H01L25/0652 ,  H01L25/18

Abstract: Embodiments of the present disclosure provide a microelectronic assembly comprising: an integrated circuit (IC) die in a first layer and a plurality of IC dies in a second layer, at least two adjacent IC dies in the plurality being electrically coupled along their proximate edges by the IC die. The first layer and the second layer are electrically and mechanically coupled by interconnects having a pitch of less than 10 micrometers between adjacent interconnects, and the IC die comprises capacitors and voltage regulator circuitry.

公开(公告)号：US20230097714A1

公开(公告)日：2023-03-30

申请号：US17485208

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： William J. Lambert ,  Beomseok Choi ,  Krishna Bharath ,  Kaladhar Radhakrishnan ,  Adel Elsherbini

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/00

Abstract: In one embodiment, a base die apparatus includes a conformal power delivery structure comprising a first electrically conductive layer defining one or more recesses, and a second electrically conductive layer at least partially within the recesses of the first electrically conductive layer and having a lower surface that generally conforms with the upper surface of the first electrically conductive layer. The conformal power delivery structure also includes a dielectric material between the surfaces of the first electrically conductive layer and the second electrically conductive layer that conform with one another. The conformal power delivery structure may be connected to connection pads of the base die apparatus, e.g., to provide power delivery to integrated circuit (IC) chips connected to the base die apparatus. The base die apparatus also includes bridge circuitry to connect IC chips with one another.

公开(公告)号：US20230095608A1

公开(公告)日：2023-03-30

申请号：US17485250

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Aleksandar Aleksov ,  Feras Eid ,  Henning Braunisch ,  Thomas L. Sounart ,  Johanna Swan ,  Beomseok Choi ,  Krishna Bharath ,  William J. Lambert ,  Kaladhar Radhakrishnan

IPC: H05K3/14 ,  H05K3/10 ,  H05K3/30 ,  H01L21/768 ,  H01L21/82

Abstract: A embedded passive structure, a microelectronic system, and an integrated circuit device assembly, and a method of forming the embedded passive structure. The embedded passive structure includes a base layer; a passive device attached to the base layer; a first power plane comprising metal and adjacent an upper surface of the base layer, the first power plane having a portion electrically coupled to a terminal of the passive device, wherein an upper surface of a combination of the first power plane and the passive device defines a recess; a second power plane comprising metal, the second power plane at least partially within the recess and having a lower surface that conforms with the upper surface of the combination; and a liner including a dielectric layer between the first power plane and the second power plane.