Magnetically patterned etch mask
    22.
    发明授权
    Magnetically patterned etch mask 失效
    磁图案蚀刻掩模

    公开(公告)号:US06174449B1

    公开(公告)日:2001-01-16

    申请号:US09079252

    申请日:1998-05-14

    IPC分类号: G03G1900

    CPC分类号: H01J9/025 H01L21/0337

    摘要: A method for forming an etch mask is described. In particular, an etch mask is formed using masking particles positionally restrained by a matrix medium. Either the masking particles or the matrix medium is more magnetically conductive with respect to the other. A magnetic field is applied for making a random distribution of the masking particles less random. Consequently, agglomeration of the masking particles is reduced. Masking particles with submicron dimensions may be used for providing features of less than a micron. The mask formed may be an etch mask employed in forming a field emitter tip for a field emission display.

    摘要翻译: 描述了形成蚀刻掩模的方法。 特别地,使用由基质介质位置约束的掩模颗粒形成蚀刻掩模。 掩模颗粒或基质介质相对于另一个更具有导磁性。 施加磁场以使掩蔽粒子的随机分布更少随机。 因此,掩蔽颗粒的团聚减少。 具有亚微米尺寸的掩模颗粒可用于提供小于一微米的特征。 形成的掩模可以是用于形成用于场致发射显示的场发射器尖端的蚀刻掩模。

    Process for low temperature semiconductor fabrication
    23.
    发明授权
    Process for low temperature semiconductor fabrication 失效
    低温半导体制造工艺

    公开(公告)号:US6080032A

    公开(公告)日:2000-06-27

    申请号:US356852

    申请日:1999-07-19

    申请人: James J. Alwan

    发明人: James J. Alwan

    IPC分类号: H01J9/02

    CPC分类号: H01J9/025

    摘要: A method for forming semiconductor devices without utilizing high temperature processing involves forming a surface porous silicon layer. The surface porous silicon layer may be removed by selective etching or it may be oxidized and then removed by selective etching. In the case of a field emission display, the porous silicon formation process is sufficiently controllable that uniform emitters may be formed. Moreover, by maintaining the structure at a temperature below the temperature at which substantial diffusion of alkaline constituents occurs, soda-lime glass may be used as a substrate for making semiconductor devices.

    摘要翻译: 在不利用高温处理的情况下形成半导体器件的方法包括形成表面多孔硅层。 表面多孔硅层可以通过选择性蚀刻去除,或者可以被氧化,然后通过选择性蚀刻除去。 在场发射显示的情况下,可以充分地控制多孔硅形成过程,从而可以形成均匀的发射体。 此外,通过将结构保持在低于碱性成分的实质扩散的温度以下的温度,钠钙玻璃可以用作制造半导体器件的基板。

    Light-insensitive resistor for current-limiting of field emission displays
    26.
    发明授权
    Light-insensitive resistor for current-limiting of field emission displays 失效
    用于场发射显示器限流的光敏电阻器

    公开(公告)号:US06507329B2

    公开(公告)日:2003-01-14

    申请号:US09774812

    申请日:2001-01-30

    IPC分类号: G09G322

    摘要: A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.

    摘要翻译: 用于场发射显示器的半导体器件包括由半导体材料,玻璃,钠钙或塑料形成的衬底。 在基板上形成第一导电材料层。 在第一层上形成第二层微晶硅。 该层具有响应于在场发射显示器的操作期间变化的条件,特别是来自发射的电子或来自环境的变化的光强度而不波动的特性。 在第二层上形成一个或多个冷阴极发射体。

    Structures, lithographic mask forming solutions, mask forming methods, field emission display emitter mask forming methods, and methods of forming plural field emission display emitters
    27.
    发明授权
    Structures, lithographic mask forming solutions, mask forming methods, field emission display emitter mask forming methods, and methods of forming plural field emission display emitters 失效
    结构,光刻掩模形成方法,掩模形成方法,场发射显示发射体掩模形成方法和形成多个场发射显示发射体的方法

    公开(公告)号:US06458515B2

    公开(公告)日:2002-10-01

    申请号:US09947648

    申请日:2001-09-05

    IPC分类号: G03C500

    摘要: The present invention includes structures, lithographic mask forming solutions, mask forming methods, field emission display emitter mask forming methods, and methods of forming plural field emission display emitters. One aspect of the present invention provides a mask forming method including forming a masking layer over a surface of a substrate; screen printing plural masking particles over a surface of the masking layer; and removing at least portions of the masking layer using the masking particles as a mask. Another aspect of the present invention provides a method of forming plural field emission display emitters. This method includes forming a masking layer over an emitter substrate; screen printing a plurality of masking particles over the masking layer; removing portions of the masking layer intermediate the screen printed masking particles to form a plurality of masking elements; removing the masking particles from the masking elements; and removing portions of the emitter substrate to form plural emitters.

    摘要翻译: 本发明包括结构,光刻掩模形成溶液,掩模形成方法,场致发射显示发射体掩模形成方法以及形成多场发射显示发射体的方法。 本发明的一个方面提供一种掩模形成方法,包括在衬底的表面上形成掩模层; 在掩模层的表面上方式印刷多个掩蔽粒子; 以及使用所述掩模颗粒作为掩模去除所述掩蔽层的至少一部分。 本发明的另一方面提供了一种形成多个场发射显示发射器的方法。 该方法包括在发射极基板上形成掩模层; 在掩模层上方丝网印刷多个掩模颗粒; 去除屏幕印刷掩模颗粒之间的掩模层的部分以形成多个掩模元件; 从掩蔽元件去除掩蔽粒子; 以及去除所述发射极基板的部分以形成多个发射极。

    Polishing slurry and method for chemical-mechanical polishing
    28.
    发明授权
    Polishing slurry and method for chemical-mechanical polishing 失效
    抛光浆料和化学机械抛光方法

    公开(公告)号:US06271139B1

    公开(公告)日:2001-08-07

    申请号:US09109003

    申请日:1998-07-01

    IPC分类号: H01L2102

    摘要: A method for polishing a grid of a field emission display (FED) with a polishing slurry contain very small particle of colloidal particles of amorphous silica in an alkaline medium. The method results in highly selective planarization well-suited for chemical-mechanical polishing (CMP) of the grid for the self-aligned CMP-FED fabrication process. An FED grid made according to this method is also disclosed.

    摘要翻译: 用抛光浆料抛光场发射显示器(FED)的栅格的方法在碱性介质中含有非常小的无定形二氧化硅胶体颗粒颗粒。 该方法导致非常适合用于自对准CMP-FED制造工艺的电网的化学机械抛光(CMP)的高选择性平面化。 还公开了根据该方法制造的FED格栅。

    Dry dispense of particles to form a fabrication mask
    30.
    发明授权
    Dry dispense of particles to form a fabrication mask 失效
    干燥分配颗粒以形成制造掩模

    公开(公告)号:US6110394A

    公开(公告)日:2000-08-29

    申请号:US120558

    申请日:1998-07-22

    IPC分类号: H01J9/02 B05D1/04

    CPC分类号: H01J9/025

    摘要: A substrate is placed on a charging surface, to which a first voltage is applied. Etch-resistant dry particles are placed in a cup in a nozzle to which a second voltage, less than the first voltage, is applied. A carrier gas is directed through the nozzle, which projects the dry particles out of the nozzle toward the substrate. The particles pick up a charge from the potential applied to the nozzle and are electrostatically attracted to the substrate. The particles adhere to the substrate, where they form an etch mask. The substrate is etched and the particles are removed. Emitter tips for a field emission display may be formed in the substrate.

    摘要翻译: 将基板放置在施加第一电压的充电表面上。 将耐蚀刻干燥颗粒放置在喷嘴中的杯中,其中施加小于第一电压的第二电压。 载气被引导通过喷嘴,其将干燥颗粒从喷嘴向衬底投射。 颗粒从施加到喷嘴的电位拾取电荷,并被静电吸引到基板上。 颗粒粘附到基底上,在那里它们形成蚀刻掩模。 蚀刻基板并除去颗粒。 用于场致发射显示器的发射极尖端可以形成在衬底中。