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45 条记录 (耗时 0.018 秒)

    Polishing slurry and method for chemical-mechanical polishing
    5.
    发明授权
    Polishing slurry and method for chemical-mechanical polishing 失效
    抛光浆料和化学机械抛光方法

    公开(公告)号：US06271139B1

    公开(公告)日：2001-08-07

    申请号：US09109003

    申请日：1998-07-01

    申请人： James J. Alwan ,  Craig M. Carpenter

    发明人： James J. Alwan ,  Craig M. Carpenter

    IPC分类号： H01L2102

    CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02 ,  H01J9/148 ,  H01J2329/00

    摘要： A method for polishing a grid of a field emission display (FED) with a polishing slurry contain very small particle of colloidal particles of amorphous silica in an alkaline medium. The method results in highly selective planarization well-suited for chemical-mechanical polishing (CMP) of the grid for the self-aligned CMP-FED fabrication process. An FED grid made according to this method is also disclosed.

    摘要翻译： 用抛光浆料抛光场发射显示器（FED）的栅格的方法在碱性介质中含有非常小的无定形二氧化硅胶体颗粒颗粒。 该方法导致非常适合用于自对准CMP-FED制造工艺的电网的化学机械抛光（CMP）的高选择性平面化。 还公开了根据该方法制造的FED格栅。

    Chemical vapor deposition methods
    6.
    发明授权
    Chemical vapor deposition methods 失效
    化学气相沉积法

    公开(公告)号：US07378127B2

    公开(公告)日：2008-05-27

    申请号：US09805620

    申请日：2001-03-13

    申请人： Craig M. Carpenter ,  Ross S. Dando

    发明人： Craig M. Carpenter ,  Ross S. Dando

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/45519 ,  C23C16/45527

    摘要： A chemical vapor deposition apparatus includes a deposition chamber defined at least in part by chamber walls, a substrate holder inside the chamber, and at least one process chemical inlet to the chamber. At least one purge inlet to the chamber is positioned elevationally above the substrate holder and outside a lateral periphery of the substrate holder. The purge inlet is configured to inject at least one purge material into the chamber and past the substrate holder. The purge inlet can be positioned and configured to inject an annular purge material curtain concentric to the substrate holder. A chemical vapor deposition method includes injecting at least one purge material into a deposition chamber and forming a purge curtain from the injected purge material. The purge curtain can extend downward from elevationally above a substrate holder and outside a lateral periphery of the substrate holder. The purge curtain can flow past the substrate holder.

    摘要翻译： 化学气相沉积设备包括至少部分地由室壁限定的沉积室，室内的衬底保持器，以及至室的至少一个工艺化学入口。 至少一个到室的净化入口位于衬底保持器的正上方并且位于衬底保持器的侧边外侧。 净化入口构造成将至少一种清洗材料注入室中并经过衬底保持器。 吹扫入口可以被定位和构造成将衬套保持器同心的环形吹扫材料窗口注入。 化学气相沉积方法包括将至少一种吹扫材料注入沉积室并从注入的吹扫材料形成清洗帘。 清洗帘幕可从基板保持器的正上方向下延伸并且在基板保持器的侧边外侧延伸。 清洗帘可以流过基板支架。

    Chemical vapor deposition method
    7.
    发明授权
    Chemical vapor deposition method 失效
    化学气相沉积法

    公开(公告)号：US07229666B2

    公开(公告)日：2007-06-12

    申请号：US10912878

    申请日：2004-08-06

    申请人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

    发明人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/4401 ,  C23C16/45519

    摘要： Methods of chemical vapor deposition include providing a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. At least one process chemical inlet to the deposition chamber is included. A substrate is positioned within the chamber and a process gas is provided over the substrate effective to deposit material onto the substrate. While providing the process gas, a purge gas is emitted into the chamber from a plurality of purge gas inlets comprised by at least one chamber wall surface. The purge gas inlets are separate from the at least one process chemical inlet and the emitting forms an inert gas curtain over the chamber wall surface.

    摘要翻译： 化学气相沉积的方法包括提供至少部分地由室侧壁和室底壁中的至少一个限定的沉积室。 包括沉积室的至少一个工艺化学品入口。 衬底定位在腔室内，并且在衬底上方设置有效地将材料沉积到衬底上的工艺气体。 在提供工艺气体的同时，净化气体从由至少一个室壁表面包括的多个吹扫气体入口排出到室中。 吹扫气体入口与至少一个过程化学品入口分离，并且所述排放物在室壁表面上形成惰性气体窗帘。

    Heated gas line body feedthrough for vapor and gas delivery systems and methods for employing same
    8.
    发明授权
    Heated gas line body feedthrough for vapor and gas delivery systems and methods for employing same 失效
    用于蒸汽和气体输送系统的加热气体管线馈通及其采用方法

    公开(公告)号：US07090727B2

    公开(公告)日：2006-08-15

    申请号：US09932860

    申请日：2001-08-17

    申请人： Craig M. Carpenter ,  Raynald B. Cantin

    发明人： Craig M. Carpenter ,  Raynald B. Cantin

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： C23C16/455

    摘要： A feedthrough device for use in deposition chambers such as chemical vapor deposition chambers and atomic layer deposition chambers and methods using the same in association with such chambers as well as chambers so equipped. The feedthrough device includes an associated heating device to maintain the temperature of the feedthrough device above a predetermined level and thus maintain a temperature differential between the deposition chamber body and a vaporized organometallic precursor as it passes therethrough. The feedthrough device may include a helical groove formed along the surface of a longitudinal body portion thereof to complementarily receive a resistance type cable heater. The heater may further include a temperature sensing device to assist in monitoring and controlling the temperature of the feedthrough device.

    摘要翻译： 用于沉积室的馈通装置，例如化学气相沉积室和原子层沉积室，以及与这种室相关联的方法以及如此装备的室。 馈通装置包括相关联的加热装置，以将馈通装置的温度保持在预定水平以上，并且因此在沉积室主体和汽化的有机金属前体通过时保持温度差。 馈通装置可以包括沿着其纵向主体部分的表面形成的螺旋槽，以互补地接收电阻型电缆加热器。 加热器还可以包括温度感测装置，以帮助监视和控制馈通装置的温度。

    Methods for forming and cleaning photolithography reticles
    10.
    发明申请
    Methods for forming and cleaning photolithography reticles 有权
    光刻掩模版的形成和清洁方法

    公开(公告)号：US20080057411A1

    公开(公告)日：2008-03-06

    申请号：US11515089

    申请日：2006-08-31

    申请人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

    发明人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

    IPC分类号： A47G1/12 ,  G03C5/00 ,  G03F1/14 ,  G03F1/00

    CPC分类号： G03F1/82 ,  G03F1/32 ,  G03F1/54 ,  G03F1/80

    摘要： A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.

    摘要翻译： 提供从用于光刻的掩模版中除去杂质（例如原子硫）的方法。 在一个实施例中，提供了包括板，板上的第一层和第一层上的光致抗蚀剂层的掩模版（或光掩模）。 用包含含硫化合物的第一化学物质除去光致抗蚀剂层。 用包含含硫蚀刻剂的第二化学物质除去第一层的至少一部分，从而暴露板的部分。 去除光致抗蚀剂层和/或第一层的至少一部分在掩模版的至少部分上留下硫。 在清洁步骤中，将掩模版与一种或多种激发的氧气接触以除去残留的硫和其它污染物，例如碳，硫和含氧物质。 实施例的方法可用于清洁例如二值光掩模，衰减相移掩模（APSM）和高透射衰减光掩模。