公开(公告)号：US20160012782A1

公开(公告)日：2016-01-14

申请号：US14793106

申请日：2015-07-07

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Arichika Ishida ,  Norihiro Uemura ,  Hidekazu Miyake ,  Hiroto Miyake ,  Yohei Yamaguchi

IPC: G09G3/36

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/136227 ,  H01L27/1288

Abstract: According to one embodiment, a display device includes a TFT on an insulating substrate. The TFT includes a gate electrode, an insulating layer on the gate electrode, a semiconductor layer on the insulating layer, and a source electrode and a drain electrode each provided in contact with at least a part of the semiconductor layer. The source and drain electrodes have a laminated structure including a lower layer, an intermediate layer and an upper layer. The source and drain electrodes include sidewalls each including a first tapered portion on the upper layer side, a second tapered portion on the lower layer side and a sidewall protective film attached to the second tapered portion. The taper angle of the first tapered portion is smaller than that of the second tapered portion.

Abstract translation: 根据一个实施例，显示装置包括在绝缘基板上的TFT。 TFT包括栅极电极，栅电极上的绝缘层，绝缘层上的半导体层，以及各自设置成与半导体层的至少一部分接触的源电极和漏电极。 源电极和漏电极具有包括下层，中间层和上层的层压结构。 源电极和漏电极包括侧壁，其各自包括上层侧的第一锥形部分，下层侧上的第二锥形部分和附接到第二锥形部分的侧壁保护膜。 第一锥形部的锥角小于第二锥形部的锥角。

公开(公告)号：US11855102B2

公开(公告)日：2023-12-26

申请号：US17831747

申请日：2022-06-03

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1333 ,  H01L29/417 ,  G02F1/1343 ,  G02F1/1362 ,  H10K59/121 ,  H10K102/00

CPC classification number: H01L27/1225 ,  G02F1/1368 ,  G02F1/133345 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1251 ,  H01L29/41733 ,  H01L29/7869 ,  H01L29/78618 ,  G02F1/13685 ,  G02F1/134363 ,  G02F1/136295 ,  G02F2202/10 ,  G02F2202/104 ,  H01L29/78648 ,  H01L29/78675 ,  H10K59/1213 ,  H10K2102/00

Abstract: The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an interlayer insulating film is formed on the first oxide semiconductor; a drain wiring, which connects with the first oxide semiconductor, and a source wiring, which connects with the first oxide semiconductor, are formed on the interlayer insulating film; the drain wiring or the source wiring is a laminated structure of a second oxide semiconductor and a first metal, the second oxide semiconductor is under the first metal.

公开(公告)号：US11764305B2

公开(公告)日：2023-09-19

申请号：US17510534

申请日：2021-10-26

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Yuichiro Hanyu ,  Hiroki Hidaka

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/423 ,  H01L21/02 ,  H01L27/12 ,  H10K59/126

CPC classification number: H01L29/7869 ,  H01L21/02266 ,  H01L21/02554 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/78696 ,  H10K59/126

Abstract: A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.

公开(公告)号：US11355520B2

公开(公告)日：2022-06-07

申请号：US17015385

申请日：2020-09-09

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1333 ,  H01L29/417 ,  H01L27/32 ,  G02F1/1343 ,  G02F1/1362

Abstract: The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an interlayer insulating film is formed on the first oxide semiconductor; a drain wiring, which connects with the first oxide semiconductor, and a source wiring, which connects with the first oxide semiconductor, are formed on the interlayer insulating film; the drain wiring or the source wiring is a laminated structure of a second oxide semiconductor and a first metal, the second oxide semiconductor is under the first metal.

公开(公告)号：US20210288078A1

公开(公告)日：2021-09-16

申请号：US17336620

申请日：2021-06-02

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Kazufumi Watabe ,  Yoshinori Ishii ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49

Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US10573666B2

公开(公告)日：2020-02-25

申请号：US16011725

申请日：2018-06-19

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Kazufumi Watabe ,  Yoshinori Ishii ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L27/32

Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US10539846B2

公开(公告)日：2020-01-21

申请号：US16109834

申请日：2018-08-23

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Isao Suzumura

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1343 ,  H01L29/423

Abstract: According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.

公开(公告)号：US10453965B2

公开(公告)日：2019-10-22

申请号：US15892513

申请日：2018-02-09

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Isao Suzumura

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L27/146 ,  H01L29/423 ,  H01L27/32 ,  G02F1/1362 ,  G02F1/1368

Abstract: The purpose of the present invention is to realize the TFT of the oxide semiconductor having a superior characteristics and high reliability during the product's life. The structure of the present invention is as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed on the first oxide semiconductor, the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film, a gate electrode is formed on the first aluminum film.

公开(公告)号：US20180342536A1

公开(公告)日：2018-11-29

申请号：US15978464

申请日：2018-05-14

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Hajime Watakabe ,  Akihiro Hanada ,  Hirokazu Watanabe ,  Yohei Yamaguchi ,  Marina Shiokawa ,  Ryotaro Kimura

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1333

CPC classification number: H01L27/124 ,  G02F1/133305 ,  G02F1/134363 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2202/104 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/78678 ,  H01L29/7869

Abstract: The purpose of the invention is to form a flexible display device where the substrate is made of resin, wherein the TFT can be annealed in high temperature; consequently, a reliability of the TFT is improved. The concrete measure is as follows. A display device having a pixel electrode and a TFT including a semiconductor layer on a substrate comprising: a source region of the semiconductor layer connects with a source electrode, a drain region of the semiconductor layer connects with a drain electrode; the pixel electrode connects with the source electrode; the drain electrode connects with a video signal line; a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor and the substrate, the semiconductor layer is formed between the pixel electrode and the substrate.

公开(公告)号：US20180286890A1

公开(公告)日：2018-10-04

申请号：US15923026

申请日：2018-03-16

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Yohei Yamaguchi ,  Hajime Watakabe ,  Akihiro Hanada ,  Hirokazu Watanabe ,  Marina Shiokawa

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/49 ,  H01L21/02 ,  H01L21/465 ,  H01L21/4763 ,  H01L29/66

Abstract: The purpose of the invention is to improve reliability of the TFT of the oxide semiconductor. The invention is characterized as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor; a first gate insulating film is formed on the first oxide semiconductor, a gate electrode is formed on the first gate insulating film, an interlayer insulating film is formed over the gate electrode; the gate insulating film includes a first silicon oxide film, the gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy; the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film.