公开(公告)号：US07118937B2

公开(公告)日：2006-10-10

申请号：US10882933

申请日：2004-07-01

Applicant: Jin Jang ,  Sung-Hwan Kim ,  Hye-Young Choi

Inventor： Jin Jang ,  Sung-Hwan Kim ,  Hye-Young Choi

IPC: H01I51/40

CPC classification number: H01L27/283 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0052 ,  H01L51/0516 ,  H01L51/0545 ,  H01L51/56

Abstract: The present invention relates to a method of selectively depositing an organic semiconductor material and a method of manufacturing an organic semiconductor thin film transistor array. Since the thin film transistor array is formed by locally performing a plasma process on a substrate before depositing an organic semiconductor active layer on the substrate, the organic semiconductor material is deposited on only the organic semiconductor active layer having an island shape. Therefore, it is not necessary to use a shadow mask method or a photolithography method to manufacture an active matrix array. Accordingly, the present invention has advantages in that it is possible to obtain a high resolution thin film transistor array and to prevent characteristics of the thin film transistors in the array from being deteriorated.

Abstract translation: 本发明涉及有选择地沉积有机半导体材料的方法和制造有机半导体薄膜晶体管阵列的方法。 由于薄膜晶体管阵列是通过在衬底上淀积有机半导体有源层之前在衬底上局部地执行等离子体处理而形成的，所以有机半导体材料只沉积在具有岛状的有机半导体有源层上。 因此，不需要使用荫罩法或光刻法来制造有源矩阵阵列。 因此，本发明的优点在于可以获得高分辨率薄膜晶体管阵列，并且防止阵列中的薄膜晶体管的特性劣化。

公开(公告)号：US20050029611A1

公开(公告)日：2005-02-10

申请号：US10732320

申请日：2003-12-09

Applicant: Jin Jang ,  Ji Hur ,  Hyun Nam

Inventor： Jin Jang ,  Ji Hur ,  Hyun Nam

IPC: H01L29/786 ,  H01L27/146 ,  H01L31/0376 ,  H01L31/10 ,  H01L31/0232

CPC classification number: H01L31/0376 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14692 ,  Y02E10/50

Abstract: The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.

Abstract translation: 本发明涉及一种图像传感器，包括用作用于X射线摄影装置的图像传感器，指纹识别装置，扫描仪等的非晶硅薄膜晶体管光学传感器及其制造方法 图像传感器。 由于根据本发明的薄膜晶体管光学传感器通过在沟道区域中设置偏移区域而具有高电阻硅区域，所以即使在高电压下，光学传感器的暗漏电流也保持在低电平。 因此，可以对根据本发明的薄膜晶体管光学传感器施加高电压，使得图像传感器可以对弱光敏感。 此外，由于图像传感器中的存储电容形成为双重结构，所以图像传感器具有高的电容值。 此外，由于下部公共电极与上部公共电极电连接，所以图像传感器具有稳定的结构。

公开(公告)号：US06648711B1

公开(公告)日：2003-11-18

申请号：US09592257

申请日：2000-06-12

Applicant: Jin Jang ,  Suk-jae Chung ,  Sung-hoon Lim ,  Jae-eun Yoo

Inventor： Jin Jang ,  Suk-jae Chung ,  Sung-hoon Lim ,  Jae-eun Yoo

IPC: H01J904

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J31/127 ,  Y10S977/721 ,  Y10S977/723 ,  Y10S977/742 ,  Y10S977/843 ,  Y10S977/844 ,  Y10S977/888

Abstract: A field emitter having a high current density even at a low voltage using a carbon nanotube film, a method of manufacturing the same, and a field emission display device having the field emitter, are provided, The field emitter includes an insulating substrate. a thin film transistor formed on the insulating substrate, the thin film transistor having a semiconductor layer, a source electrode, a drain electrode and a gate electrode, and an electron emitting unit formed of a carbon nanotube film on the drain electrode of the thin film transistor The thin film transistor can be a coplanar-type transistor, a stagger-type transistor, or an inverse stagger-type transistor. The surface of a portion of the drain electrode, which contacts the carbon nanotube film, contains catalytic metal which is transition metal such as nickel or cobalt. Alternatively, the drain electrode itself can be formed of catalytic metal for carbon nanotube growth.

Abstract translation: 提供了即使在使用碳纳米管膜的低电压下也具有高电流密度的场致发射体，其制造方法以及具有该场致发射体的场致发射显示装置。场发射器包括绝缘基板。 形成在所述绝缘基板上的薄膜晶体管，所述薄膜晶体管具有半导体层，源极，漏极和栅电极，以及由所述薄膜的漏电极上的碳纳米管膜形成的电子发射单元 晶体管薄膜晶体管可以是共面型晶体管，交错型晶体管或反交错型晶体管。 与碳纳米管膜接触的漏电极的一部分的表面含有催化金属，其为镍或钴等过渡金属。 或者，漏电极本身可以由用于碳纳米管生长的催化金属形成。

公开(公告)号：US06451637B1

公开(公告)日：2002-09-17

申请号：US09493201

申请日：2000-01-28

Applicant: Jin Jang ,  Sung-Hoon Kim

Inventor： Jin Jang ,  Sung-Hoon Kim

IPC: H01L2100

CPC classification number: C30B1/023 ,  C30B29/06

Abstract: The present invention related to a method of forming a polycrystalline silicon film which forms a polysilicon film by crystallizing silicon by means of carrying out plasma exposure and applying an electric field thereon. The present invention includes the steps of forming a metal plasma exposure layer on a substrate wherein the metal plasma exposure layer works as a catalyst for metal induced crystallization, and depositing amorphous silicon on the substrate on which the plasma exposure layer is formed while an electric field is applied thereon. The present invention enables to crystallize the whole film in such a short annealing time less than 10 minutes by forming a metal layer under a silicon layer by plasma particle exposure and, successively, by crystallizing silicon which is being formed under 520° C. And, the present invention reduces metal contamination in the crystallized silicon film as the amount of metal is easy to be controlled by plasma exposure time. Moreover, the present invention enables to form a polysilicon film several &mgr;m thick as it is easy to form polysilicon of which thickness does not matter.

Abstract translation: 本发明涉及通过进行等离子体曝光和在其上施加电场而使硅结晶而形成多晶硅膜的多晶硅膜的形成方法。 本发明包括在基板上形成金属等离子体曝光层的步骤，其中金属等离子体曝光层用作金属诱导结晶的催化剂，并在其上形成等离子体曝光层的基板上沉积非晶硅，同时电场 施加在其上。 本发明能够通过在等离子体颗粒曝光下在硅层下形成金属层，并且通过在520℃下形成硅来结晶在短的退火时间，使其在短于10分钟的短时间内使整个膜结晶。 本发明通过等离子体曝光时间容易地控制金属的量来减少结晶硅膜中的金属污染。 此外，本发明能够形成几个厚度的多晶硅膜，因为容易形成厚度无关的多晶硅。

公开(公告)号：US06326226B1

公开(公告)日：2001-12-04

申请号：US09115498

申请日：1998-07-14

Applicant: Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh

Inventor： Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh

IPC: H01L2120

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

Abstract: A method of crystallizing an amorphous film includes the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a metal layer; and crystallizing the amorphous film by forming an electric field in the amorphous film and the metal layer, while simultaneously subjecting the amorphous film and the metal layer to a thermal treatment, thereby crystallizing the amorphous film.

Abstract translation: 结晶非晶膜的方法包括以下步骤：形成能够在基板上结晶的非晶膜，所述非晶膜与金属层接触; 并且通过在非晶膜和金属层中形成电场而结晶非晶膜，同时对非晶膜和金属层进行热处理，从而使非晶膜结晶。

公开(公告)号：US06312979B1

公开(公告)日：2001-11-06

申请号：US09299571

申请日：1999-04-27

Applicant: Jin Jang ,  Soo Young Yoon ,  Hyun Churl Kim

Inventor： Jin Jang ,  Soo Young Yoon ,  Hyun Churl Kim

IPC: H01L2100

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

Abstract: The present invention relates to a method of crystallizing an amorphous silicon layer which is carried out by depositing a crystallization-inducing substance on an amorphous silicon layer on crystallizing the amorphous silicon layer by metal-induced crystallization whereby speed of crystallizing silicon is increased and metal contamination by MIC is reduced. The present invention includes the steps of depositing a crystallizing-induced layer of an induced substance for crystallizing silicon on an amorphous silicon layer wherein the crystallizing induced layer is formed to the thickness under 0.03 angstroms, and treating thermally the amorphous silicon layer on which the crystallizing-induced layer is deposited. In another aspect, the present invention includes the steps of forming a crystallizing-induced substance on an amorphous silicon layer wherein the crystallizing-induced substance has predetermined density on an unit area of the amorphous silicon layer, and treating thermally the amorphous silicon layer on which the crystallizing-induced substance is formed.

Abstract translation: 本发明涉及一种结晶非晶硅层的方法，该方法是通过在非晶硅层上沉淀结晶诱导物质而进行的，该结晶诱导物质通过金属诱导结晶使非晶硅层结晶，结晶硅的速度增加，金属污染 通过MIC减少。 本发明包括以下步骤：在非晶硅层上沉积用于结晶硅的诱导物质的结晶诱导层，其中结晶诱导层形成为厚度为0.03埃，并且将非晶硅层热处理结晶 被沉积。 另一方面，本发明包括以下步骤：在非晶硅层上形成结晶诱发物质，其中结晶诱发物质在非晶硅层的单位面积上具有预定的密度，并对其上的非晶硅层进行热处理 形成结晶诱发物质。

公开(公告)号：US08172633B2

公开(公告)日：2012-05-08

申请号：US12295943

申请日：2007-04-04

Applicant: Kyu Chang Park ,  Jin Jang ,  Je Hwang Ryu

Inventor： Kyu Chang Park ,  Jin Jang ,  Je Hwang Ryu

IPC: H01J9/04

CPC classification number: H01J9/025 ,  B82Y10/00 ,  H01J31/127 ,  H01J2201/30469

Abstract: The present invention relates to a field emission display and a manufacturing method of the same having selective positioning of electron field emitters. More specifically, the present invention provides a field emission display and a manufacturing method of the same having selective positioning of electron field emitters which can prevent a cross-talk that is a mutual interference phenomenon between pixels and improve uniformity of pixels based on uniform electron emission by deciding positions of carbon nano-tubes which are sources of electron emission and growing carbon nano-tubes before the structure of electrodes is formed, and forming spacers directly on electrodes such that the spacers divide carbon nano-tubes formed uniformly and selectively into pixel units.

Abstract translation: 本发明涉及具有电子场发射器的选择性定位的场致发射显示器及其制造方法。 更具体地说，本发明提供了具有选择性定位电子场发射体的场致发射显示器及其制造方法，其可以防止作为像素之间的相互干扰现象的串扰，并且基于均匀的电子发射来改善像素的均匀性 通过在形成电极结构之前确定作为电子发射源和生长碳纳米管的碳纳米管的位置，并且直接在电极上形成间隔物，使得间隔物将均匀且有选择地形成的碳纳米管分成像素单元 。

公开(公告)号：US20110223748A1

公开(公告)日：2011-09-15

申请号：US13063182

申请日：2009-05-19

Applicant: Jin Jang ,  Jae-Hwan Oh ,  Dong-Han Kang ,  Jun-Hyuk Cheon

Inventor： Jin Jang ,  Jae-Hwan Oh ,  Dong-Han Kang ,  Jun-Hyuk Cheon

IPC: H01L21/20

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L27/1277

Abstract: Disclosed herein is a method of crystallizing an amorphous material for use in fabrication of thin film transistors. The method includes forming an amorphous silicon layer on a substrate, depositing a Ni metal layer on part of the amorphous silicon layer, and heat-treating the amorphous silicon layer to cause phase transition of the amorphous silicon, wherein the Ni metal layer is deposited to an average thickness of 0.79 Å or less. The method can crystallize an amorphous material for use in thin film transistors using the metal induced lateral crystallization while restricting thickness and density of Ni, thereby minimizing current leakage in the thin film transistor.

Abstract translation: 本文公开了一种使用于制造薄膜晶体管的非晶材料的结晶方法。 该方法包括在衬底上形成非晶硅层，在非晶硅层的一部分上沉积Ni金属层，并对非晶硅层进行热处理以引起非晶硅​​的相变，其中Ni金属层被沉积​​到 平均厚度为0.79以下。 该方法可以使用金属诱导横向结晶在薄膜晶体管中使用非晶材料，同时限制Ni的厚度和密度，从而最小化薄膜晶体管中的电流泄漏。

公开(公告)号：US07944415B2

公开(公告)日：2011-05-17

申请号：US11396925

申请日：2006-04-03

Applicant: Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Youn-Duck Nam

Inventor： Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Youn-Duck Nam

IPC: G09G3/30

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0262 ,  G09G2320/043 ,  G09G2320/045 ,  G09G2360/145 ,  G09G2360/148

Abstract: Disclosed are an Organic Light Emitting Diode (OLED) display device having a pixel circuit which use a thin film transistor (TFT) as an active device and a driving method thereof. The OLED display device can constantly obtain luminance of the light emitting elements by elapsed time, because the brightness of the pixel for the signal voltage is not varied by a characteristic variance of the transistor (e.g., a driving element) and the OLED. Accordingly, the OLED display device according to the present invention can minimizes the variance of the pixel brightness due to deterioration of the transistor and the OLED caused by usage for a long time and increase life span of the display device. Further, the OLED display device can display high quality of the image even in case of the high precision display, because it is controlled to flow the current to OLED included in each pixel.

Abstract translation: 公开了具有使用薄膜晶体管（TFT）作为有源器件的像素电路的有机发光二极管（OLED）显示装置及其驱动方法。 由于用于信号电压的像素的亮度不被晶体管（例如，驱动元件）和OLED的特征方差改变，所以OLED显示装置可以经常地获得发光元件的亮度。 因此，根据本发明的OLED显示装置可以最小化由于长时间使用引起的晶体管和OLED的劣化导致的像素亮度的变化，并且增加显示装置的使用寿命。 此外，即使在高精度显示的情况下，OLED显示装置也可以显示高质量的图像，因为它被控制以将电流流动到包括在每个像素中的OLED。

公开(公告)号：US07675018B2

公开(公告)日：2010-03-09

申请号：US11662605

申请日：2004-09-15

Applicant: Jin Jang ,  Joon-Chul Goh

Inventor： Jin Jang ,  Joon-Chul Goh

IPC: H01J40/14

CPC classification number: G09G3/3233 ,  G09G3/3291 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2320/043

Abstract: A drive circuit for organic light emitting diodes (OLEDs), and a method for driving OLEDs, using the drive circuit. The drive circuit includes pixel circuits, each of which includes a first transistor for receiving a data voltage, and outputting a drive current to an OLED, a second transistor for transmitting the data voltage to the first transistor, a third transistor for connecting the gate and drain of the first transistor, a capacitor for storing a gate voltage of the first transistor, and a fourth transistor connected to the drain of the first transistor. The OLED is connected to the source of the first transistor by a fifth transistor, or is directly connected to the source of the first transistor without using the fifth transistor. The drive circuit generates drive current, based on a non-uniformity-compensated threshold voltage of the first transistor, thereby obtaining a uniform luminance of the OLED.

Abstract translation: 用于有机发光二极管（OLED）的驱动电路，以及使用驱动电路驱动OLED的方法。 驱动电路包括像素电路，每个像素电路包括用于接收数据电压的第一晶体管和向OLED输出驱动电流，用于将数据电压传输到第一晶体管的第二晶体管，用于连接栅极和 第一晶体管的漏极，用于存储第一晶体管的栅极电压的电容器和连接到第一晶体管的漏极的第四晶体管。 OLED通过第五晶体管连接到第一晶体管的源极，或者直接连接到第一晶体管的源极而不使用第五晶体管。 驱动电路基于第一晶体管的不均匀补偿阈值电压产生驱动电流，从而获得OLED的均匀亮度。