公开(公告)号：US06451637B1

公开(公告)日：2002-09-17

申请号：US09493201

申请日：2000-01-28

Applicant: Jin Jang ,  Sung-Hoon Kim

Inventor： Jin Jang ,  Sung-Hoon Kim

IPC: H01L2100

CPC classification number: C30B1/023 ,  C30B29/06

Abstract: The present invention related to a method of forming a polycrystalline silicon film which forms a polysilicon film by crystallizing silicon by means of carrying out plasma exposure and applying an electric field thereon. The present invention includes the steps of forming a metal plasma exposure layer on a substrate wherein the metal plasma exposure layer works as a catalyst for metal induced crystallization, and depositing amorphous silicon on the substrate on which the plasma exposure layer is formed while an electric field is applied thereon. The present invention enables to crystallize the whole film in such a short annealing time less than 10 minutes by forming a metal layer under a silicon layer by plasma particle exposure and, successively, by crystallizing silicon which is being formed under 520° C. And, the present invention reduces metal contamination in the crystallized silicon film as the amount of metal is easy to be controlled by plasma exposure time. Moreover, the present invention enables to form a polysilicon film several &mgr;m thick as it is easy to form polysilicon of which thickness does not matter.

Abstract translation: 本发明涉及通过进行等离子体曝光和在其上施加电场而使硅结晶而形成多晶硅膜的多晶硅膜的形成方法。 本发明包括在基板上形成金属等离子体曝光层的步骤，其中金属等离子体曝光层用作金属诱导结晶的催化剂，并在其上形成等离子体曝光层的基板上沉积非晶硅，同时电场 施加在其上。 本发明能够通过在等离子体颗粒曝光下在硅层下形成金属层，并且通过在520℃下形成硅来结晶在短的退火时间，使其在短于10分钟的短时间内使整个膜结晶。 本发明通过等离子体曝光时间容易地控制金属的量来减少结晶硅膜中的金属污染。 此外，本发明能够形成几个厚度的多晶硅膜，因为容易形成厚度无关的多晶硅。

公开(公告)号：US07688370B2

公开(公告)日：2010-03-30

申请号：US11295373

申请日：2005-12-06

Applicant: Ji-Ho Hur ,  Se-Hwan Kim ,  Jin Jang

Inventor： Ji-Ho Hur ,  Se-Hwan Kim ,  Jin Jang

IPC: H04N3/14

CPC classification number: H04N5/37452 ,  H04N5/3559

Abstract: Disclosed is an active pixel sensor array, which can reduce the number of elements and the size of capacitors by enabling a reset switching transistor to include a function of an optical sensor and to reset a pixel voltage with a power supply voltage VDD after a gate selection signal is outputted, and to reset a pixel voltage with a power supply voltage VDD by a coupling function in case that a gate selection signal is outputted. The active pixel image sensor having a gate driving circuit and a column driving circuit includes a pixel composed of a voltage supply unit for supplying a signal voltage to the column driving circuit; a gate selection unit for turning on according to a n+1-th gate selection signal and outputting a voltage based on a difference between a pixel voltage and a threshold voltage of the voltage supply unit; a reset switching unit for turning on according to a n+1-th gate selection signal and resetting the pixel voltage with a power supply voltage VDD; and a storage unit and a coupling unit for coupling so as to initialize the pixel voltage to be lower than the power supply voltage VDD just after the n+1-th gate selection signal is outputted.

Abstract translation: 公开了一种有源像素传感器阵列，其可以通过使复位开关晶体管包括光学传感器的功能并且在栅极选择之后以电源电压VDD复位像素电压来减少元件的数量和电容器的尺寸 在输出栅极选择信号的情况下，通过耦合功能输出信号，并且利用电源电压VDD复位像素电压。 具有栅极驱动电路和列驱动电路的有源像素图像传感器包括由用于向列驱动电路提供信号电压的电压供给单元构成的像素; 栅极选择单元，用于根据第n + 1栅极选择信号导通，并且基于像素电压和电压提供单元的阈值电压之间的差输出电压; 复位开关单元，用于根据第n + 1个选通信号导通，并用电源电压VDD复位像素电压; 以及存储单元和耦合单元，用于耦合以将像素电压初始化为低于在输出第n + 1门选通信号之后的电源电压VDD。

公开(公告)号：US07662681B2

公开(公告)日：2010-02-16

申请号：US11609374

申请日：2006-12-12

Applicant: Jin Jang ,  Jun-Hyuk Cheon

Inventor： Jin Jang ,  Jun-Hyuk Cheon

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L29/78678 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66765

Abstract: Disclosed herein is a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor, and more specifically a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor wherein a phosphosilicate-spin-on-glass (P-SOG) is used for a gate insulating film. The method comprises the steps of: forming a buffer layer on an insulating substrate; forming a gate metal pattern on the buffer layer; forming a planarized gate insulating film on the gate metal pattern; depositing an amorphous silicon layer on the gate insulating film; crystallizing the amorphous silicon layer into a polycrystalline silicon layer; forming a n+ or p+ layer on the polycrystalline silicon layer; forming a source/drain metal layer on the n+ or p+ layer; and forming a passivation layer on the source/drain metal layer.

Abstract translation: 本文公开了一种用于制造反向交错多晶硅薄膜晶体管的方法，更具体地说，一种用于制造反向交错多晶硅薄膜晶体管的方法，其中磷硅酸盐旋涂玻璃（P-SOG）用于 栅极绝缘膜。 该方法包括以下步骤：在绝缘基板上形成缓冲层; 在缓冲层上形成栅极金属图案; 在栅极金属图案上形成平坦化的栅极绝缘膜; 在栅极绝缘膜上沉积非晶硅层; 将所述非晶硅层结晶成多晶硅层; 在多晶硅层上形成n +或p +层; 在n +或p +层上形成源极/漏极金属层; 以及在源极/漏极金属层上形成钝化层。

公开(公告)号：US20090032873A1

公开(公告)日：2009-02-05

申请号：US11895125

申请日：2007-08-23

Applicant: Jeffrey Scott Cites ,  Jin Jang ,  ChuanChe Wang ,  Carlo Anthony Kosik Williams ,  Sung Eun Ahn

Inventor： Jeffrey Scott Cites ,  Jin Jang ,  ChuanChe Wang ,  Carlo Anthony Kosik Williams ,  Sung Eun Ahn

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/78603 ,  H01L21/2007 ,  H01L29/78654

Abstract: Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing a cleaved surface of the exfoliation layer; subjecting the cleaved surface of the exfoliation layer to a dry etching process to produce a single crystal semiconductor layer of about 5-20 nm thickness; and forming a thin film transistor in the thin semiconductor layer.

Abstract translation: 用于制造玻璃（SiOG）结构的半导体的方法和装置包括：使施主单晶半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露剥离层的切割表面; 使剥离层的切割表面进行干蚀刻工艺以产生约5-20nm厚度的单晶半导体层; 以及在所述薄半导体层中形成薄膜晶体管。

公开(公告)号：US20090021287A1

公开(公告)日：2009-01-22

申请号：US11662605

申请日：2004-09-15

Applicant: Jin Jang ,  Joon-Chul Goh

Inventor： Jin Jang ,  Joon-Chul Goh

IPC: H03K3/00

CPC classification number: G09G3/3233 ,  G09G3/3291 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2320/043

Abstract: A drive circuit for organic light emitting diodes (OLEDs), and a method for driving OLEDs, using the drive circuit. The drive circuit includes pixel circuits, each of which includes a first transistor for receiving a data voltage, and outputting a drive current to an OLED, a second transistor for transmitting the data voltage to the first transistor, a third transistor for connecting the gate and drain of the first transistor, a capacitor for storing a gate voltage of the first transistor, and a fourth transistor connected to the drain of the first transistor. The OLED is connected to the source of the first transistor by a fifth transistor, or is directly connected to the source of the first transistor without using the fifth transistor. The drive circuit generates drive current, based on a non-uniformity-compensated threshold voltage of the first transistor, thereby obtaining a uniform luminance of the OLED.

Abstract translation: 用于有机发光二极管（OLED）的驱动电路，以及使用驱动电路驱动OLED的方法。 驱动电路包括像素电路，每个像素电路包括用于接收数据电压的第一晶体管和向OLED输出驱动电流，用于将数据电压传输到第一晶体管的第二晶体管，用于连接栅极和 第一晶体管的漏极，用于存储第一晶体管的栅极电压的电容器和连接到第一晶体管的漏极的第四晶体管。 OLED通过第五晶体管连接到第一晶体管的源极，或者直接连接到第一晶体管的源极而不使用第五晶体管。 驱动电路基于第一晶体管的不均匀补偿阈值电压产生驱动电流，从而获得OLED的均匀亮度。

公开(公告)号：US20070069637A1

公开(公告)日：2007-03-29

申请号：US11321703

申请日：2005-12-29

Applicant: Jin Jang ,  Yong-Kyun Lee

Inventor： Jin Jang ,  Yong-Kyun Lee

IPC: H05B33/00 ,  H01J1/62

CPC classification number: H01L51/50 ,  B82Y30/00 ,  H01L51/5088

Abstract: A polymer light emitting diode having an interinsulation layer between a hole injecting layer (or a hole transporting layer) and a light emitting polymer layer, and a method for fabricating the polymer light emitting diode. The polymer light emitting diode having the interinsulation layer includes a hole injecting layer formed on an anode layer, formed on a glass substrate, by coating or printing; the interinsulation layer having a designated thickness formed on the hole injecting layer; a light emitting polymer layer formed on the interinsulation layer by coating or printing; and an electron injecting layer formed on the light emitting polymer layer, and a cathode layer formed on the electron injecting layer.

Abstract translation: 具有空穴注入层（或空穴传输层）和发光聚合物层之间的绝缘层的聚合物发光二极管及其制造方法。 具有绝缘层的聚合物发光二极管包括通过涂布或印刷形成在玻璃基板上的阳极层上形成的空穴注入层; 所述绝缘层具有形成在所述空穴注入层上的指定厚度; 通过涂布或印刷在绝缘层上形成的发光聚合物层; 以及形成在发光聚合物层上的电子注入层和形成在电子注入层上的阴极层。

公开(公告)号：US20060286780A1

公开(公告)日：2006-12-21

申请号：US10570285

申请日：2004-09-02

Applicant: Jin Jang ,  Jong-Hyun Choi ,  Seung-Soo Kim ,  Jae-Hwan Oh ,  Jun-Hyuk Chon

Inventor： Jin Jang ,  Jong-Hyun Choi ,  Seung-Soo Kim ,  Jae-Hwan Oh ,  Jun-Hyuk Chon

IPC: H01L21/20

CPC classification number: H01L21/02532 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/78603

Abstract: Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.

Abstract translation: 公开了一种在基板上形成硅薄膜的方法，更具体地说，涉及一种在柔性金属基板上形成质量好的多晶硅薄膜的方法。 准备金属基板（110），使金属基板（110）的表面变平。 形成在金属基板（110）上的绝缘膜（120）。 在绝缘膜（120）上形成非晶硅层（130）。 金属层（140）形成在非晶硅层（130）上。 将金属基板（110）上的样品加热并结晶。

公开(公告)号：US20060202609A1

公开(公告)日：2006-09-14

申请号：US11285552

申请日：2005-11-21

Applicant: Jin Jang ,  Kyu-Chang Park ,  Sung-Hoon Lim

Inventor： Jin Jang ,  Kyu-Chang Park ,  Sung-Hoon Lim

IPC: H01J1/00 ,  H01J1/62

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00

Abstract: There are provided a method of forming carbon nano tubes, a field emission display device having the carbon nanotubes formed using the method, and a method of manufacturing the field emission display device. The method of forming carbon nanotubes includes forming a catalytic metal layer on a substrate, forming an insulation layer on the catalytic metal layer, and forming carbon nanotubes on the insulation layer.

公开(公告)号：US06952022B2

公开(公告)日：2005-10-04

申请号：US10732320

申请日：2003-12-09

Applicant: Jin Jang ,  Ji Ho Hur ,  Hyun Chul Nam

Inventor： Jin Jang ,  Ji Ho Hur ,  Hyun Chul Nam

IPC: H01L29/786 ,  H01L27/146 ,  H01L31/0376 ,  H01L31/10 ,  H01L29/04

CPC classification number: H01L31/0376 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14692 ,  Y02E10/50

Abstract: The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.

Abstract translation: 本发明涉及一种图像传感器，包括用作用于X射线摄影装置的图像传感器，指纹识别装置，扫描仪等的非晶硅薄膜晶体管光学传感器及其制造方法 图像传感器。 由于根据本发明的薄膜晶体管光学传感器通过在沟道区域中设置偏移区域而具有高电阻硅区域，所以即使在高电压下，光学传感器的暗漏电流也保持在低电平。 因此，可以对根据本发明的薄膜晶体管光学传感器施加高电压，使得图像传感器可以对弱光敏感。 此外，由于图像传感器中的存储电容形成为双重结构，所以图像传感器具有高的电容值。 此外，由于下部公共电极与上部公共电极电连接，所以图像传感器具有稳定的结构。

公开(公告)号：US06331209B1

公开(公告)日：2001-12-18

申请号：US09556816

申请日：2000-04-21

Applicant: Jin Jang ,  Suk-jae Chung

Inventor： Jin Jang ,  Suk-jae Chung

IPC: C30B2518

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/17 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/843 ,  Y10S977/844 ,  Y10S977/888

Abstract: An easy method of forming purified carbon nanotubes from which graphitic phase or carbon particles are removed, using a high-density plasma. Carbon nanotubes are grown on a substrate using a plasma chemical vapor deposition method at a high plasma density of 1011 cm−3 or more. The carbon nanotube formation includes: growing a carbon nanotube layer on a substrate to have a predetermined thickness by plasma deposition; purifying the carbon nanotube layer by plasma etching; and repeating the growth and the purification of the carbon nanotube layer. For the plasma etching, a halogen-containing gas, for example, a carbon tetrafluoride gas, is used as a source gas.

Abstract translation: 使用高密度等离子体形成纯化的碳纳米管的简单方法，由此除去石墨相或碳颗粒。 使用等离子体化学气相沉积法在1011cm -3以上的高等离子体密度下，在基板上生长碳纳米管。 碳纳米管形成包括：通过等离子体沉积在基板上生长具有预定厚度的碳纳米管层; 通过等离子体蚀刻来净化碳纳米管层; 并重复碳纳米管层的生长和纯化。 对于等离子体蚀刻，使用含卤素的气体，例如四氟化碳气体作为源气体。