公开(公告)号：US07935554B2

公开(公告)日：2011-05-03

申请号：US12407361

申请日：2009-03-19

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

IPC分类号： H01L21/302

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

摘要翻译： 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US08114691B2

公开(公告)日：2012-02-14

申请号：US12630880

申请日：2009-12-04

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

公开(公告)号：US07655959B2

公开(公告)日：2010-02-02

申请号：US11293273

申请日：2005-12-05

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

公开(公告)号：US20070145386A1

公开(公告)日：2007-06-28

申请号：US11705736

申请日：2007-02-14

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

摘要翻译： 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US07759140B2

公开(公告)日：2010-07-20

申请号：US11450389

申请日：2006-06-12

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01L33/22

摘要： Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

摘要翻译： 提供了一种发光器件及其制造方法。 发光装置包括具有至少一个具有弯曲表面的突出部分的基板，其中即使当半导体晶体层的生长和发光装置的形成是均匀的时，也可获得一致的缺陷密度和均匀的应力分布 完成 此外，发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

公开(公告)号：US20100081221A1

公开(公告)日：2010-04-01

申请号：US12630880

申请日：2009-12-04

申请人： Jeong-wook LEE ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Jeong-wook LEE ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

公开(公告)号：US20060226431A1

公开(公告)日：2006-10-12

申请号：US11450389

申请日：2006-06-12

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/22

摘要： Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

摘要翻译： 提供了一种发光器件及其制造方法。 发光装置包括具有至少一个具有弯曲表面的突出部分的基板，其中即使当半导体晶体层的生长和发光装置的形成是均匀的时，也可以获得一致的缺陷密度和均匀的应力分布 完成 此外，发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

公开(公告)号：US20060118802A1

公开(公告)日：2006-06-08

申请号：US11293273

申请日：2005-12-05

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

公开(公告)号：US08822249B2

公开(公告)日：2014-09-02

申请号：US13436523

申请日：2012-03-30

申请人： Ho-sun Paek ,  Hak-hwan Kim ,  Sung-kyong Oh

发明人： Ho-sun Paek ,  Hak-hwan Kim ,  Sung-kyong Oh

IPC分类号： H01L21/18 ,  H01L21/301 ,  H01L21/311

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/505 ,  H01L33/62 ,  H01L2933/0016

摘要： A light-emitting device and a method of manufacturing the same are provided. The light-emitting device includes a compound semiconductor structure having a first N-type compound semiconductor layer, an active layer, and a P-type compound semiconductor layer, a P-type electrode layer that is disposed on the P-type compound semiconductor layer and electrically connects with the P-type compound semiconductor layer, a plurality of insulation walls disposed at two sides of the compound semiconductor structure and the P-type electrode layer, a plurality of N-type electrode layers penetrating the plurality of insulation walls, and a conductive substrate on which a plurality of N-type electrode connecting layers respectively corresponding to a plurality of N-type electrode layers are separated from a P-type electrode connecting layer corresponding to the P-type electrode layer.

摘要翻译： 提供一种发光器件及其制造方法。 发光装置包括具有第一N型化合物半导体层，有源层和P型化合物半导体层的化合物半导体结构，设置在P型化合物半导体层上的P型电极层 与P型化合物半导体层，配置在化合物半导体结构和P型电极层两侧的多个绝缘壁，贯穿多个绝缘壁的多个N型电极层电连接，以及 分别对应于多个N型电极层的多个N型电极连接层与对应于P型电极层的P型电极连接层分离的导电基板。