摘要:
An apparatus and method for hybrid multiplication in GF(2m) by which trade-off between the area and the operation speed of an apparatus for a hybrid multiplier in finite field GF(2m) can be achieved are provided. The apparatus for hybrid multiplication includes: a matrix Z generation unit generating [m×k] matrix Z for performing a partial multiplication of a(x) and b(x), by dividing b(x) by k bits (k≦┌m/2┐), when multiplication of m-bit multiplier a(x) and m-bit multiplicand b(x) is performed from [(m+k−1)×k] coefficient matrix of a(x) in GF(2m); a partial multiplication unit performing the partial multiplication ┌m/k┐k−1 times in units of rows of the matrix Z to calculate an (┌m/k┐k−1)-th partial multiplication value and a final result value of the multiplication; and a reduction unit receiving the (┌m/k┐k−1)-th partial multiplication value fed back from the partial multiplication unit and performing reduction of the value in order to obtain a partial multiplication value next to the (┌m/k┐k−1 )-th partial multiplication value.
摘要翻译:一种用于在GF(2MM)中的混合乘法的装置和方法,通过该方法在有限域GF(2)中的混合乘法器的装置的面积和操作速度之间进行权衡, / SUP>)可以实现。 用于混合乘法的装置包括:通过将b(x)除以k位(k <=┌m/ m)来生成用于执行a(x)和b(x)的部分相乘的[mxk]矩阵Z的矩阵Z生成单元 2)中,当从GF(2 m SUP>); 部分乘法单元以矩阵Z的行为单位执行部分乘法┌m/k┐k-1次,以计算(┌m/k┐k-1)个部分乘法值和最终结果值 乘法; 以及缩小单元,接收从部分乘法单元反馈的(┌m/k┐k-1)个部分相乘值,并执行该值的减少,以获得与(┌m/ k ┐k-1)部分乘法值。
摘要:
Disclosed are a chip scale package and a method of fabricating the chip scale package. The chip scale package comprises conductive layers with a designated depth formed on an upper and a lower surfaces of a chip, and electrode surfaces formed on the same side surfaces of the conductive layers, which are connected to corresponding connection pads of a printed circuit board. The chip scale package is miniaturized in the whole package size. Further, the method of fabricating the chip scale package does not require a wire-bonding step or a via hole forming step, thereby simplifying the fabrication process of the chip scale package and improving the reliability of the chip scale package.
摘要:
Provided is a method for removing noise of a positron emission tomography (PET) signal in a PET-magnetic resonance imaging (MRI) fusion device without using an MRI radio frequency (RF) shield that degrades image quality. The method includes: receiving a PET output signal from a PET-MRI fusion device and performing analog filtering by removing noise components due to an RF pulse frequency based on the relationship between the frequency of the PET output signal and a magnetic resonance (MR) RF frequency (Larmor frequency); and converting the filtered signal into a digital signal through sampling. The method allows acquisition of molecular-level images without declined performance of a PET detector in MRI environment.
摘要:
Disclosed is a versatile single photon emission computerized tomograph capable of imaging a number of areas of the patient by the same system to obtain diagnostic nuclear medical images of excellent resolution and sensitivity, and imaging method using the same. The versatile single photon emission computerized tomograph includes a support means configured in a plate structure so that the patient can lie down and adapted to move in longitudinal and vertical directions while the patient is lying down; a gantry configured in an arc shape about an object to be imaged; a body for retaining and supporting an outer surface of the gantry while being able to slide and rotate; and at least one detector mounted so as to slide along the inner surface of the gantry and adapted to protract toward or retract from the center point of the gantry to image an organ of the patient.
摘要:
A method of fabricating a trench isolation layer in a semiconductor device. A method of fabricating a trench isolation layer in a semiconductor device, which may remove particles (e.g. in the form of an oxide layer) that are formed during a moat wet etch process.
摘要:
A method of fabricating a flat panel display includes, judging a panel defect area and a non-defect area of a display panel, generating a first compensation data for compensating the panel defect area, first modulating a data of the panel defect area by using the first compensation data, judging a brightness at a border between the panel defect area and the non-defect area of the display panel after compensating the panel defect, generating a second compensation data for compensating the border and the panel defect area, second modulating a data of the border and the panel defect area by using the second compensation data, adding the first compensation data and the second compensation data to calculate a resultant compensation data, and storing the resultant compensation data at a data modulation memory.
摘要:
A polishing pad for chemically mechanically polishing a semiconductor wafer comprises a first groove pattern circularly formed on the surface of the polishing pad, and a second groove pattern formed on the surface of the polishing pad while spirally extending from the circular center of the polishing pad to the outside so as to overlap the first groove pattern. The polishing pad further comprises a third groove pattern formed on the surface of the polishing pad while radially extending from the circular center of the polishing pad to the outside so as to overlap the first and second groove patterns. A chemical mechanical polishing apparatus comprises the polishing pad. The polishing pad of the chemical mechanical polishing apparatus has enhanced groove patterns formed on the polishing pad to provide uniform distribution of the slurry, thereby enhancing polishing speed and polishing uniformity.
摘要:
Disclosed herein is a chemical mechanical polishing (CMP) method for manufacturing a semiconductor device, comprising performing partial ion implantation of dopants at different concentrations into a plurality of at least two divided regions of a wafer having a planarization-target film, and subjecting the partially ion implanted-wafer to a chemical mechanical polishing process. In accordance with the present invention, non-uniformity of the removal rate in a chemical mechanical polishing process is countervailed by dopants which are implanted at different concentrations via partial ion implantation, and thereby it is possible to polish the target film at a uniform removal rate.
摘要:
This invention is directed to methods for preventing, treating, reversing, inhibiting or arresting epilepsy and epileptogenesis in a subject comprising administering to the subject in need thereof a therapeutically effective amount of a compound selected from the group consisting of Formula (I) and Formula (II), or a pharmaceutically acceptable salt or ester thereof: wherein phenyl is substituted at X with one to five halogen atoms selected from the group consisting of fluorine, chlorine, bromine and iodine; and, R1, R2, R3, R4, R5 and R6 are independently selected from the group consisting of hydrogen and C1-C4 alkyl; wherein C1-C4 alkyl is optionally substituted with phenyl (wherein phenyl is optionally substituted with substituents independently selected from the group consisting of halogen, C1-C4 alkyl, C1-C4 alkoxy, amino, nitro and cyano).
摘要:
Disclosed herein is a cutting tool having high toughness and abrasion resistance, in which a coated cutting tool including a cemented carbide substrate, a cermet substrate or a ceramic substrate coated with a hard coating film by means of chemical vapor deposition, moderate temperature-chemical vapor deposition or physical vapor deposition, and/or a cemented carbide cutting tool, a cermet cutting tool or a ceramic cutting tool are subjected to wet blasting using 10-300 μm sized particles to decrease residual tensile stress or increase residual compressive stress, thereby improving toughness, and also, reducing surface roughness of the cutting tool, thus remarkably increasing chipping resistance and flaking resistance.