Strain measurement apparatus, linear expansion coefficient measurement method, and correction coefficient measurement method for temperature distribution detector
    22.
    发明授权
    Strain measurement apparatus, linear expansion coefficient measurement method, and correction coefficient measurement method for temperature distribution detector 有权
    应变测量装置,线性膨胀系数测量方法和温度分布检测器的校正系数测量方法

    公开(公告)号:US09410798B2

    公开(公告)日:2016-08-09

    申请号:US13658424

    申请日:2012-10-23

    CPC classification number: G01B11/16 H04N13/239

    Abstract: A strain measurement apparatus includes: a stereo camera device that produces a first stereo image and a second stereo image of a measurement object; an actual strain calculation portion configured to find a three-dimensional configuration of the measurement object from the first stereo image and the second stereo image to find actual strain of the measurement object; a temperature distribution detector that detects a temperature distribution of the measurement object; a free thermal strain calculation portion configured to find free thermal strain of the measurement object from the temperature distribution detected by the temperature distribution detector; and a constraint strain calculation portion configured to find as constraint strain of the measurement object a difference obtained by subtracting the free thermal strain found by the free thermal strain calculation portion from the actual strain found by the actual strain calculation portion.

    Abstract translation: 应变测量装置包括:立体照相机装置,其产生测量对象的第一立体图像和第二立体图像; 实际应变计算部分,被配置为从第一立体图像和第二立体图像中找到测量对象的三维配置,以发现测量对象的实际应变; 温度分布检测器,其检测测量对象的温度分布; 自由热应变计算部分,被配置为根据由温度分布检测器检测的温度分布找到测量对象的自由热应变; 以及约束应变计算部,其被配置为通过从由所述实际应变计算部发现的实际应变中减去由所述自由热应变计算部发现的自由热应变而求出测量对象的约束应变。

    Semiconductor light emitting device
    25.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号:US08488647B2

    公开(公告)日:2013-07-16

    申请号:US12923634

    申请日:2010-09-30

    CPC classification number: H01S5/0264 H01S5/18313 H01S5/18325

    Abstract: The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.

    Abstract translation: 本发明提供一种通过简单的制造工艺实现增加的光检测精度的半导体发光器件。 除了用于变窄的电流的第一氧化层之外,在有源层和半导体光检测元件之间提供一个或多个第二氧化层。 由于天然发射光包含许多发散分量,所以天然发射光被第二氧化层反射和散射,并且抑制了将自然发射光传播到半导体光检测元件侧。 半导体光检测元件的自然发光的检测水平降低,光检测精度提高。 第一和第二氧化层通过单一氧化工艺形成,从而简化了制造工艺。

    RUNNING-LINKED SOUND PRODUCING DEVICE
    26.
    发明申请
    RUNNING-LINKED SOUND PRODUCING DEVICE 有权
    运行连接的声音制作装置

    公开(公告)号:US20130177167A1

    公开(公告)日:2013-07-11

    申请号:US13823840

    申请日:2011-10-14

    CPC classification number: B60Q5/008 B62J3/00 B62K2204/00 G10K15/02

    Abstract: A running-linked sound producing device produces a running-linked sound according to a running state of a vehicle. The running-linked sound producing device includes a vehicle speed estimation unit to estimate a vehicle speed of the vehicle, an accelerator command value estimation unit to estimate an accelerator command value based on a vehicle speed estimated by the vehicle speed estimation unit, and a running-linked sound generation unit that generates a running-linked sound, wherein the running-linked sound generation unit generates a running-linked sound based on a vehicle speed estimated by the vehicle speed estimation unit and an accelerator command value estimated by the accelerator command value estimation unit.

    Abstract translation: 运行连接的声音产生装置根据车辆的运行状态产生运行声音。 运行连接的声音产生装置包括:车速估计单元,用于估计车辆的车速;加速器指令值估计单元,用于基于由车速估计单元估计出的车速估计加速器指令值, 产生运行链接的声音,其中运行声音产生单元基于由车速估计单元估计的车速和由加速器指令值估计出的加速器指令值产生运行声音 估计单位

    Laser diode array, method of manufacturing same, printer, and optical communication device
    28.
    发明申请
    Laser diode array, method of manufacturing same, printer, and optical communication device 有权
    激光二极管阵列,制造方法,打印机和光通信装置

    公开(公告)号:US20110164646A1

    公开(公告)日:2011-07-07

    申请号:US13064218

    申请日:2011-03-11

    Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

    Abstract translation: 提供一种制造能够抑制串扰的激光二极管阵列的方法。 制造激光二极管阵列的方法包括以下步骤:通过晶体生长从第一衬底侧顺序地在第一衬底上形成含有可氧化材料和垂直谐振器结构的剥离层,然后选择性地蚀刻剥离层和垂直 谐振器结构,从而处理成柱状,从侧面氧化剥离层的剥离步骤,然后从第一基板剥离柱状的垂直共振器结构,以及重新连接步骤,连接多个 将通过剥离步骤获得的柱状垂直共振器结构施加到在表面上形成有金属层的第二基板的金属层的表面上。

    Semiconductor light emitting device
    29.
    发明申请
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号:US20110096806A1

    公开(公告)日:2011-04-28

    申请号:US12923634

    申请日:2010-09-30

    CPC classification number: H01S5/0264 H01S5/18313 H01S5/18325

    Abstract: The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.

    Abstract translation: 本发明提供一种通过简单的制造工艺实现增加的光检测精度的半导体发光器件。 除了用于变窄的电流的第一氧化层之外,在有源层和半导体光检测元件之间提供一个或多个第二氧化层。 由于天然发射光包含许多发散分量,所以天然发射光被第二氧化层反射和散射,并且抑制了将自然发射光传播到半导体光检测元件侧。 半导体光检测元件的自然发光的检测水平降低,光检测精度提高。 第一和第二氧化层通过单一氧化工艺形成,从而简化了制造工艺。

    Vertical cavity surface emitting laser
    30.
    发明授权
    Vertical cavity surface emitting laser 有权
    垂直腔表面发射激光

    公开(公告)号:US07912105B2

    公开(公告)日:2011-03-22

    申请号:US11612076

    申请日:2006-12-18

    CPC classification number: H01S5/18311 H01S5/18333 H01S5/18338 H01S2301/166

    Abstract: A VCSEL which can be easily manufactured and can selectively suppress only high-order transverse mode oscillation is provided. The VCSEL includes a resonator, a first current confinement layer, and a second current confinement layer. The resonator includes an active layer having a light emitting region, and a pair of first multilayer reflector and a second multilayer reflector provided with the active layer in between, and resonate is generated in a given wavelength. The first current confinement layer has a current injection region is a region corresponding to the light emitting region, and is formed at a region including an antinode of a standing wave. The second current confinement layer has a current injection region with a diameter smaller than a diameter of the first current injection region and is formed at a region including a node standing wave.

    Abstract translation: 提供了可以容易地制造并且可以选择性地仅抑制高阶横模振荡的VCSEL。 VCSEL包括谐振器,第一电流限制层和第二电流限制层。 谐振器包括具有发光区域的有源层和在其间设置有有源层的一对第一多层反射器和第二多层反射器,并且在给定波长中产生谐振。 第一电流限制层具有电流注入区域是与发光区域相对应的区域,并且形成在包括驻波的波腹的区域中。 第二电流限制层具有直径小于第一电流注入区的直径的电流注入区,并形成在包括节点驻波的区域。

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