公开(公告)号：US07728366B2

公开(公告)日：2010-06-01

申请号：US10599609

申请日：2005-04-05

申请人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

发明人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

IPC分类号： H01L31/113

CPC分类号： H01L31/022408 ,  H01L31/108

摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.

摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。

公开(公告)号：US07883911B2

公开(公告)日：2011-02-08

申请号：US12402223

申请日：2009-03-11

申请人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

发明人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

IPC分类号： H01L21/00

CPC分类号： H01L31/022408 ,  H01L31/108

摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.

摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。

公开(公告)号：US20090176327A1

公开(公告)日：2009-07-09

申请号：US12402223

申请日：2009-03-11

申请人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

发明人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

IPC分类号： H01L21/28

CPC分类号： H01L31/022408 ,  H01L31/108

摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.

摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。

公开(公告)号：US20070194357A1

公开(公告)日：2007-08-23

申请号：US10599609

申请日：2005-04-05

申请人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

发明人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

IPC分类号： H01L31/113

CPC分类号： H01L31/022408 ,  H01L31/108

摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.

摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。

公开(公告)号：US20130113064A1

公开(公告)日：2013-05-09

申请号：US13810360

申请日：2011-06-15

申请人： Daisuke Okamoto ,  Junichi Fujikata

发明人： Daisuke Okamoto ,  Junichi Fujikata

IPC分类号： H01L31/0232

CPC分类号： G02B6/12004 ,  G02B6/4214 ,  G02B6/4246 ,  G02F1/00 ,  H01L31/1035 ,  H01L31/105 ,  H01L31/1085

摘要： The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.

摘要翻译： 本发明提供了一种解决光电检测器的灵敏度低的问题的光检测器，配备该光检测器的光通信装置及其制造方法，以及制造该光通信装置的方法。 该光检测器包括基板，布置在基板上的下包覆层，布置在下包层上的光波导，布置在光波导上的中间层，布置在中间层上的光吸收层，一对电极， 所述光吸收层，其中所述光吸收层包括IV族或III-V族单晶半导体，并且所述光吸收层吸收通过所述光波导传播的光信号。

公开(公告)号：US08116600B2

公开(公告)日：2012-02-14

申请号：US12526107

申请日：2007-12-25

申请人： Daisuke Okamoto ,  Masafumi Nakada ,  Junichi Fujikata

发明人： Daisuke Okamoto ,  Masafumi Nakada ,  Junichi Fujikata

IPC分类号： G02F1/01 ,  G02F1/035

CPC分类号： G02B6/1226 ,  B82Y20/00 ,  G02B6/12007 ,  G02F1/015 ,  G02F1/025 ,  G02F2202/20 ,  G02F2203/10 ,  G02F2203/50

摘要： Provided is a small-size optical phase modulation element and an optical modulator using it. The optical phase modulation element includes a Plasmon waveguide having a clad made of a metal material having a complex dielectric constant having a negative real part in the used wavelength and a core formed by a dielectric metal material having a complex dielectric constant having a positive real part in the used wavelength. The Plasmon waveguide is connected to an optical waveguide including a clad and a core both having a complex dielectric constant having a positive real part. The core of the Plasmon waveguide and the core of the optical waveguide are formed, at least partially, of the same semiconductor material. The Plasmon waveguide has a function to phase-modulate the incident light when voltage is applied.

摘要翻译： 提供了一种小尺寸光相位调制元件和使用它的光调制器。 光学相位调制元件包括具有由金属材料制成的包层的等离子体波导，所述金属材料具有在所使用的波长中具有负实部的复介电常数和由具有正实部的复介电常数的介电金属材料形成的芯 在使用的波长。 等离子体波导连接到包括具有正实部的复介电常数的包层和芯的光波导。 至少部分地由相同的半导体材料形成等离子体波导的核心和光波导的核心。 等离子体波导具有在施加电压时对入射光进行相位调制的功能。

公开(公告)号：US20100200941A1

公开(公告)日：2010-08-12

申请号：US12519701

申请日：2007-11-28

申请人： Junichi Fujikata ,  Daisuke Okamoto ,  Kikuo Makita ,  Kenichi Nishi ,  Keishi Ohashi

发明人： Junichi Fujikata ,  Daisuke Okamoto ,  Kikuo Makita ,  Kenichi Nishi ,  Keishi Ohashi

IPC分类号： H01L31/0232 ,  H01L31/0264 ,  H01L31/108 ,  H01L31/105

CPC分类号： H01L31/1085 ,  B82Y20/00 ,  G02B6/1226 ,  H01L31/0224 ,  H01L31/105

摘要： Intended is to provide a device structure, which makes the light receiving sensitivity and the high speediness of a photodiode compatible. Also provided is a Schottky barrier type photodiode having a conductive layer formed on the surface of a semiconductor layer. The photodiode is so constituted that a light can be incident on the back side of the semiconductor layer, and that a periodic structure, in which a light incident from the back side of the semiconductor layer causes a surface plasmon resonance, is made around the Schottky junction of the photodiode.

摘要翻译： 旨在提供一种器件结构，这使得光接收灵敏度和光电二极管的高速度兼容。 还提供了在半导体层的表面上形成有导电层的肖特基势垒型光电二极管。 光电二极管构成为能够入射到半导体层的背侧，并且在肖特基（Schottky）周围形成从半导体层的背面入射的光引起表面等离子体共振的周期性结构 光电二极管的结。

公开(公告)号：US20060232894A1

公开(公告)日：2006-10-19

申请号：US11376290

申请日：2006-03-16

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US20050019610A1

公开(公告)日：2005-01-27

申请号：US10923990

申请日：2004-08-23

申请人： Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori

发明人： Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12 ,  G11B5/64

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3268 ,  H01L43/12 ,  Y10T428/1114

摘要： In a spin tunnel magnetoresistive effect film in which a magnetic thin film to which an exchange bias is applied by exchange coupling via an anti-ferromagnetic thin film and a magnetic thin film that detects a magnetic field are laminated, a magnetic thin film or an anti-ferromagnetic thin film (PtMn, PdMn, NiMn) is laminated onto an underlayer (Ta, Zr, Hf), the surface roughness thereof being in the range from 0.1 to 5 Angstroms. A means used to control the surface roughness introduces into the film growing chamber oxygen, nitrogen, hydrogen, or a gas mixture thereof into a vacuum of 10−6 Torr to 10−9 Torr, reduces the substrate temperature to 0° C. or lower during film growth, or oxidizes an underlayer. The lower electrode layer material used is a film laminate of a high-permeability amorphous magnetic material and a non-magnetic metallic layer.

摘要翻译： 在通过反铁磁性薄膜进行交换耦合而施加了交换偏压的磁性薄膜和检测磁场的磁性薄膜的自旋隧道磁阻效应薄膜中，形成磁性薄膜或抗反射膜 将铁磁性薄膜（PtMn，PdMn，NiMn）层压到底层（Ta，Zr，Hf）上，其表面粗糙度在0.1〜5埃的范围内。 用于控制表面粗糙度的手段将氧气，氮气，氢气或其气体混合物引入10 -6 Torr至10 -9 Torr的真空中，将衬底温度降至0° C.或更低，或氧化底层。 所使用的下电极层材料是高磁导率非晶磁性材料和非磁性金属层的膜层叠体。

公开(公告)号：US6083632A

公开(公告)日：2000-07-04

申请号：US4066

申请日：1998-01-08

申请人： Junichi Fujikata ,  Masafumi Nakada

发明人： Junichi Fujikata ,  Masafumi Nakada

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/66

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/3163 ,  G11B5/3932 ,  Y10S428/90 ,  Y10T428/1129 ,  Y10T428/12465 ,  Y10T428/12542 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/12806 ,  Y10T428/12854 ,  Y10T428/12931

摘要： A magnetoresistive effect film is formed by laminating a plurality of magnetic thin films onto a substrate with an intervening non-magnetic thin film, an antiferromagnetic thin film being provided so as to neighbor to one of the ferromagnetic thin film via this intervening non-magnetic thin film. With the bias magnetic field applied to the antiferromagnetic thin film being Hr and the coercivity of the other ferromagnetic thin film being Hc.sub.2, the condition Hc.sub.2

摘要翻译： 磁阻效应膜是通过将多个磁性薄膜层叠在具有中间非磁性薄膜的基板上而形成的，反铁磁性薄膜通过这种中间非磁性薄膜被设置成与铁磁薄膜中的一个相邻 电影。 由于反铁磁性薄膜的偏磁场为Hr，另一方的铁磁性薄膜的矫顽力为Hc2，满足条件Hc2