公开(公告)号：US08728622B2

公开(公告)日：2014-05-20

申请号：US13548829

申请日：2012-07-13

申请人： Kenji Fujito ,  Yasuhiro Uchiyama

发明人： Kenji Fujito ,  Yasuhiro Uchiyama

IPC分类号： C30B7/00 ,  C30B9/00 ,  B32B1/00 ,  B32B3/00 ,  B32B17/10 ,  B32B19/00 ,  B32B9/00 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02

CPC分类号： C01B21/0632 ,  C30B7/10 ,  C30B9/12 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T428/24628 ,  Y10T428/31

摘要： Provided is a base substrate with which a Group-III nitride crystal having a large area and a large thickness can be grown while inhibiting crack generation. A single-crystal substrate for use in growing a Group-III nitride crystal thereon, which satisfies the following expression (1), wherein Z1 (μm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2 (μm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single-crystal substrate: −40

摘要翻译： 提供一种能够抑制裂纹产生的同时可以生长面积大，厚度大的III族氮化物晶体的基底。 用于生长其中的III族氮化物晶体的单晶衬底，其满足以下表达式（1），其中Z1（μm）是单晶衬底的生长表面中物理形状的翘曲量，以及 Z2（μm）是从单晶基板的生长面的结晶面形状的曲率半径计算出的翘曲量：-40

公开(公告)号：US08389969B2

公开(公告)日：2013-03-05

申请号：US13029751

申请日：2011-02-17

申请人： Shuichi Tsukada ,  Yasuhiro Uchiyama

发明人： Shuichi Tsukada ,  Yasuhiro Uchiyama

IPC分类号： H01L47/00

CPC分类号： H01L27/2445 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06

摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a first insulating film region that is embedded in a trench formed on the semiconductor substrate, a gate electrode that covers a lower surface of the first insulating film region, and a gate insulating film that is provided between the gate electrode and the semiconductor substrate. The semiconductor device further includes a first diffusion region that covers a first side surface of the first insulating film region, a second diffusion region that covers a second side surface of the first insulating film region, and a third diffusion region that covers an upper surface of the second diffusion region. A selective element includes a field-effect transistor that is constituted by the gate electrode, the first diffusion region, and the second diffusion region, and a bipolar transistor that is constituted by the substrate and the second and third diffusion regions.

摘要翻译： 半导体器件包括第一导电类型的半导体衬底，嵌入在半导体衬底上形成的沟槽中的第一绝缘膜区域，覆盖第一绝缘膜区域的下表面的栅电极和栅极绝缘膜 设置在栅电极和半导体衬底之间。 半导体器件还包括覆盖第一绝缘膜区域的第一侧面的第一扩散区域和覆盖第一绝缘膜区域的第二侧面的第二扩散区域和覆盖第一绝缘膜区域的上表面的第三扩散区域 第二扩散区。 选择元件包括由栅电极，第一扩散区和第二扩散区构成的场效应晶体管，以及由衬底和第二和第三扩散区构成的双极晶体管。

公开(公告)号：US20110210302A1

公开(公告)日：2011-09-01

申请号：US13029751

申请日：2011-02-17

申请人： Shuichi TSUKADA ,  Yasuhiro Uchiyama

发明人： Shuichi TSUKADA ,  Yasuhiro Uchiyama

IPC分类号： H01L47/00 ,  H01L27/06

CPC分类号： H01L27/2445 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06

摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a first insulating film region that is embedded in a trench formed on the semiconductor substrate, a gate electrode that covers a lower surface of the first insulating film region, and a gate insulating film that is provided between the gate electrode and the semiconductor substrate. The semiconductor device further includes a first diffusion region that covers a first side surface of the first insulating film region, a second diffusion region that covers a second side surface of the first insulating film region, and a third diffusion region that covers an upper surface of the second diffusion region. A selective element includes a field-effect transistor that is constituted by the gate electrode, the first diffusion region, and the second diffusion region, and a bipolar transistor that is constituted by the substrate and the second and third diffusion regions.

摘要翻译： 半导体器件包括第一导电类型的半导体衬底，嵌入在半导体衬底上形成的沟槽中的第一绝缘膜区域，覆盖第一绝缘膜区域的下表面的栅电极和栅极绝缘膜 设置在栅电极和半导体衬底之间。 半导体器件还包括覆盖第一绝缘膜区域的第一侧面的第一扩散区域和覆盖第一绝缘膜区域的第二侧面的第二扩散区域和覆盖第一绝缘膜区域的上表面的第三扩散区域 第二扩散区。 选择元件包括由栅电极，第一扩散区和第二扩散区构成的场效应晶体管，以及由衬底和第二和第三扩散区构成的双极晶体管。

公开(公告)号：US08009987B2

公开(公告)日：2011-08-30

申请号：US12068539

申请日：2008-02-07

申请人： Yasuhiro Uchiyama ,  Yukio Hayashi ,  Chanthan Winh

发明人： Yasuhiro Uchiyama ,  Yukio Hayashi ,  Chanthan Winh

IPC分类号： H04J14/00 ,  H04J14/02 ,  H04B10/08 ,  H04B17/00

CPC分类号： H04B10/07955 ,  H04J14/0212 ,  H04J14/0221

摘要： There is provided a shutdown controller that monitors the temperature of an optical multiplexer and maximizes the loss of an optical attenuator when a temperature monitor result is abnormal. An optical level change detection circuit section is disposed with respect to an optical level monitor of individual monitors in an optical add/drop multiplexer. An optical level monitor of a total main signal is disposed downstream of the optical multiplexer. The inconsistency of the wavelength number is detected by comparing the total of the optical level monitors of the individual channels with the optical level value of the optical level monitor, upon which shutdown control is performed in which the loss of the optical attenuator is maximized in only the channel whose optical level change is detected by the optical level change detection circuit section.

摘要翻译： 提供了关闭控制器，其监视光复用器的温度，并且当温度监视器结果异常时，最大化光衰减器的损耗。 光学级别变化检测电路部分相对于光学分插复用器中的各个监视器的光学级监视器设置。 总的主信号的光电平监视器设置在光复用器的下游。 通过将各个通道的光学电平监视器的总和与光学电平监视器的光学电平值进行比较来检测波长数的不一致性，进行关闭控制，其中光衰减器的损耗仅在其中最大化 由光学电平变化检测电路部检测出光电平变化的通道。

公开(公告)号：US07463829B2

公开(公告)日：2008-12-09

申请号：US11019736

申请日：2004-12-23

申请人： Tetsuya Uda ,  Kenta Noda ,  Yasuhiro Uchiyama ,  Hiroshi Masuda ,  Hiroyuki Nakano

发明人： Tetsuya Uda ,  Kenta Noda ,  Yasuhiro Uchiyama ,  Hiroshi Masuda ,  Hiroyuki Nakano

IPC分类号： H04J14/02 ,  H04B10/16

CPC分类号： H04B10/00

摘要： An optical transmission apparatus comprising a first detector for detecting the power of the supervisory signal light separated from received wavelength-division multiplexed signal lights; a second detector for detecting the power of the wavelength-division multiplexed signal lights after the separation of the supervisory signal light; a gain-controlled type optical amplifier for amplifying the wavelength-division multiplexed signal lights; an optical attenuator coupled to the amplifier; and a control unit for controlling the optical amplifier and the optical attenuator so as to keep the output level of the wavelength-division multiplexed signal lights to a predetermined target value, wherein the control unit restrains automatic output level control by the optical attenuator when the supervisory signal light power fluctuates within its permissible range and fluctuations in the signal light power have deviated from its permissible range.

摘要翻译： 一种光传输装置，包括：第一检测器，用于检测从接收的波分复用信号光分离的监控信号光的功率; 第二检测器，用于在分离监控信号光之后检测波分复用信号光的功率; 用于放大波分复用信号光的增益控制型光放大器; 耦合到所述放大器的光衰减器; 以及控制单元，用于控制光放大器和光衰减器，以便将波分复用信号光的输出电平保持在预定目标值，其中当监视器控制单元抑制光衰减器的自动输出电平控制 信号光功率在允许范围内波动，信号光功率的波动偏离其允许范围。