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    Apparatus and methods for predicting wafer-level defect printability
    22.
    发明授权
    Apparatus and methods for predicting wafer-level defect printability 有权
    用于预测晶圆级缺陷可印刷性的装置和方法

    公开(公告)号：US09547892B2

    公开(公告)日：2017-01-17

    申请号：US14822571

    申请日：2015-08-10

    Applicant: KLA-Tencor Corporation

    Inventor： Rui-fang Shi ,  Abdurrahman Sezginer

    IPC: G06T7/00 ,  G01N21/956

    CPC classification number: G06T7/001 ,  G01N21/956 ,  G01N2021/95676 ,  G06T2207/10144 ,  G06T2207/10152 ,  G06T2207/30148

    Abstract: Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire images at different imaging configurations from each of the pattern areas of a calibration reticle. A reticle near field is recovered for each of the pattern areas of the calibration reticle based on the acquired images from each pattern area of the calibration reticle. Using the recovered reticle near field for the calibration reticle, a lithography model for simulating wafer images is generated based on the reticle near field. Images are then acquired at different imaging configurations from each of the pattern areas of a test reticle. A reticle near field for the test reticle is then recovered based on the acquired images from the test reticle. The generated model is applied to the reticle near field for the test reticle to simulate a plurality of test wafer images, and the simulated test wafer images are analyzed to determine whether the test reticle will likely result in an unstable or defective wafer.

    Abstract translation: 公开了用于限定光刻掩模版的方法和装置。 使用掩模版检查工具从校准掩模版的每个图案区域获取不同成像配置的图像。 基于从校准掩模版的每个图案区域获取的图像，对校准掩模版的每个图案区域恢复光栅近场。 使用恢复的光栅近场用于校准掩模版，基于掩模版近场产生用于模拟晶片图像的光刻模型。 然后以与测试掩模版的每个图案区域不同的成像配置获取图像。 然后根据获得的来自测试掩模版的图像来恢复用于测试掩模版的近距离掩模版。 将生成的模型应用于测试光罩的光栅近场，以模拟多个测试晶片图像，并分析模拟的测试晶片图像，以确定测试光罩是否可能导致晶片不稳定或缺陷。

    Model-based registration and critical dimension metrology
    23.
    发明授权
    Model-based registration and critical dimension metrology 有权
    基于模型的注册和关键维度计量学

    公开(公告)号：US09311700B2

    公开(公告)日：2016-04-12

    申请号：US14032309

    申请日：2013-09-20

    Applicant: KLA-Tencor Corporation

    Inventor： Mohammad Mehdi Daneshpanah ,  Abdurrahman Sezginer

    IPC: G06K9/00 ,  G06T7/00

    CPC classification number: G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148

    Abstract: A method and system for performing model-based registration and critical dimension measurement is disclosed. The method includes: utilizing an imaging device to obtain at least one optical image of a measurement site specified for a photomask; retrieving a design of photomask and utilizing a computer model of the imaging device to generate at least one simulated image of the measurement site; adjusting at least one parameter of the computer model to minimize dissimilarities between the simulated images and the optical images, wherein the parameters includes at least a pattern registration parameter or a critical dimension parameter; and reporting the pattern registration parameter or the critical dimension parameter of the computer model when dissimilarities between the simulated images and the optical images are minimized.

    Abstract translation: 公开了一种用于执行基于模型的注册和关键维度测量的方法和系统。 该方法包括：利用成像装置获得为光掩模指定的测量部位的至少一个光学图像; 检索光掩模的设计并利用所述成像装置的计算机模型来生成所述测量部位的至少一个模拟图像; 调整所述计算机模型的至少一个参数以最小化所述模拟图像与所述光学图像之间的不相似性，其中所述参数至少包括模式注册参数或临界尺寸参数; 并且当模拟图像和光学图像之间的不相似度最小化时报告计算机模型的模式注册参数或临界尺寸参数。

    Block-to-Block Reticle Inspection
    24.
    发明申请
    Block-to-Block Reticle Inspection 有权
    块到块标线检查

    公开(公告)号：US20150078650A1

    公开(公告)日：2015-03-19

    申请号：US14466688

    申请日：2014-08-22

    Applicant: KLA-Tencor Corporation

    Inventor： Abdurrahman Sezginer ,  Patrick LoPresti ,  Joe Blecher ,  Rui-fang Shi ,  Yalin Xiong ,  John Fielden

    IPC: G01N21/88 ,  G06T7/00 ,  G01N21/958

    CPC classification number: G01N21/8851 ,  G01N21/8806 ,  G01N21/958 ,  G01N2021/8887 ,  G01N2201/125 ,  G06T7/001 ,  G06T2207/20224 ,  G06T2207/30148

    Abstract: Block-to-block reticle inspection includes acquiring a swath image of a portion of a reticle with a reticle inspection sub-system, identifying a first occurrence of a block in the swatch image and at least a second occurrence of the block in the swath image substantially similar to the first occurrence of the block and determining at least one of a location, one or more geometrical characteristics of the block and a spatial offset between the first occurrence of the block and the at least a second occurrence of the block.

    Abstract translation: 块对块掩模版检查包括用掩模版检查子系统获取掩模版的一部分的条带图像，识别样本图像中的块的第一次出现以及条纹图像中的块的至少第二次出现 基本上类似于块的第一次出现并且确定块的位置，一个或多个几何特征和块的第一次出现与块的至少第二次出现之间的空间偏移中的至少一个。

    Techniques and systems for model-based critical dimension measurements
    27.
    发明授权
    Techniques and systems for model-based critical dimension measurements 有权

    公开(公告)号：US09875534B2

    公开(公告)日：2018-01-23

    申请号：US15250649

    申请日：2016-08-29

    Applicant: KLA-Tencor Corporation

    Inventor： Abdurrahman Sezginer ,  Eric Vella ,  Balaji Ganapathy ,  Yanwei Liu

    IPC: G06K9/00 ,  G06T7/00 ,  G06T7/62

    CPC classification number: G06T7/0006 ,  G06T7/001 ,  G06T7/62 ,  G06T2207/10004 ,  G06T2207/10056 ,  G06T2207/30148

    Abstract: A reticle is inspected with an imaging system to obtain a measured image of a structure on the reticle, and the structure has an unknown critical dimension (CD). Using a model, a calculated image is generated using a design database that describes a pattern used to form the structure on the reticle. The model generates the calculated image based on: optical properties of reticle materials of the structure, a computational model of the imaging system, and an adjustable CD. A norm of a difference between the measured and calculated images is minimized by adjusting the adjustable CD and iteratively repeating the operation of generating a calculated image so as to obtain a final CD for the unknown CD of the structure. Minimizing the norm of the difference is performed simultaneously with respect to the adjustable CD and one or more uncertain parameters of the imaging system.

    Scatterometry-based imaging and critical dimension metrology
    28.
    发明授权
    Scatterometry-based imaging and critical dimension metrology 有权
    基于散射法的成像和关键维度计量学

    公开(公告)号：US09494535B2

    公开(公告)日：2016-11-15

    申请号：US14690442

    申请日：2015-04-19

    Applicant: KLA-Tencor Corporation

    Inventor： Abdurrahman Sezginer ,  John Hench ,  Michael S. Bakeman

    IPC: G01N23/201 ,  H01L21/66

    CPC classification number: G01N23/201 ,  G01N2223/611 ,  G01N2223/645 ,  H01L22/12

    Abstract: Methods and systems for performing measurements of semiconductor structures and materials based on scatterometry measurement data are presented. Scatterometry measurement data is used to generate an image of a material property of a measured structure based on the measured intensities of the detected diffraction orders. In some examples, a value of a parameter of interest is determined directly from the map of the material property of the measurement target. In some other examples, the image is compared to structural characteristics estimated by a geometric, model-based parametric inversion of the same measurement data. Discrepancies are used to update the geometric model of the measured structure and improve measurement performance. This enables a metrology system to converge on an accurate parametric measurement model when there are significant deviations between the actual shape of a manufactured structure subject to model-based measurement and the modeled shape of the structure.

    Abstract translation: 介绍了基于散射测量数据进行半导体结构和材料测量的方法和系统。 散射测量测量数据用于基于检测到的衍射级的测量强度来生成测量结构的材料特性的图像。 在一些示例中，直接从测量对象的材料属性的映射确定感兴趣的参数的值。 在一些其他示例中，将图像与通过相同测量数据的几何，基于模型的参数反演估计的结构特征进行比较。 差异用于更新测量结构的几何模型，并提高测量性能。 当使基于模型的测量的制造结构的实际形状与结构的建模形状之间存在显着的偏差时，这使测量系统能够收敛于精确的参数测量模型。

    Reticle Inspection Using Near-Field Recovery
    29.
    发明申请
    Reticle Inspection Using Near-Field Recovery 有权
    使用近场恢复的标线检查

    公开(公告)号：US20150324963A1

    公开(公告)日：2015-11-12

    申请号：US14702336

    申请日：2015-05-01

    Applicant: KLA-Tencor Corporation

    Inventor： Abdurrahman Sezginer ,  Rui-fang Shi

    IPC: G06T7/00 ,  G01N21/88 ,  G01N21/956 ,  G01N21/95

    CPC classification number: G06T7/00 ,  G01N21/8851 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/8887 ,  G01N2021/95676 ,  G01N2201/06113 ,  G01N2201/10 ,  G01N2201/12 ,  G06T7/0008 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148

    Abstract: Systems and methods for detecting defects on a reticle are provided. The embodiments include generating and/or using a data structure that includes pairs of predetermined segments of a reticle pattern and corresponding near-field data. The near-field data for the predetermined segments may be determined by regression based on actual image(s) of a reticle generated by a detector of a reticle inspection system. Inspecting a reticle may then include separately comparing two or more segments of a pattern included in an inspection area on the reticle to the predetermined segments and assigning near-field data to at least one of the segments based on the predetermined segment to which it is most similar. The assigned near-field data can then be used to simulate an image that would be formed for the reticle by the detector, which can be compared to an actual image generated by the detector for defect detection.

    Abstract translation: 提供了用于检测掩模版上的缺陷的系统和方法。 实施例包括生成和/或使用包括标线图案的预定片段对和对应的近场数据的数据结构。 用于预定段的近场数据可以通过基于由掩模版检查系统的检测器产生的掩模版的实际图像的回归来确定。 然后检查掩模版可以包括单独地将掩模版上的检查区域中包括的图案的两个或多个段与预定的段进行比较，并且基于其最大的预定段将近场数据分配给至少一个段 类似。 所分配的近场数据然后可以用于模拟由检测器为掩模版形成的图像，其可以与由检测器生成的用于缺陷检测的实际图像进行比较。

    Inspection of reticles using machine learning
    30.
    发明授权
    Inspection of reticles using machine learning 有权

    公开(公告)号：US12094101B2

    公开(公告)日：2024-09-17

    申请号：US17456415

    申请日：2021-11-24

    Applicant: KLA-Tencor Corporation

    Inventor： Hawren Fang ,  Abdurrahman Sezginer ,  Rui-fang Shi

    IPC: G06T7/00

    CPC classification number: G06T7/001 ,  G06T2207/20081 ,  G06T2207/20084 ,  G06T2207/30148

    Abstract: Disclosed are methods and apparatus for inspecting a photolithographic reticle. A plurality of reference far field images are simulated by inputting a plurality of reference near field images into a physics-based model, and the plurality of reference near field images are generated by a trained deep learning model from a test portion of the design database that was used to fabricate a test area of a test reticle. The test area of a test reticle, which was fabricated from the design database, is inspected for defects via a die-to-database process that includes comparing the plurality of reference far field reticle images simulated by the physic-based model to a plurality of test images acquired by the inspection system from the test area of the test reticle.

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