公开(公告)号：US09753364B2

公开(公告)日：2017-09-05

申请号：US14734460

申请日：2015-06-09

Applicant: KLA-TENCOR CORPORATION

Inventor： Nuriel Amir

IPC: G06F17/50 ,  G03F1/38 ,  G03F7/20

CPC classification number: G03F1/38 ,  G03F7/20 ,  G03F7/70633 ,  G03F7/70683 ,  G06F17/5068 ,  Y10T428/24802

Abstract: Methods of designing resist layers to enhance production accuracy, as well as respective layers, design files and metrology targets are disclosed. Continuous or uniform feature(s) adjacent to segmented feature(s) having a pitch and a critical dimension (CD), are configured by design to be segmented upon exposure at a same pitch and a smaller CD than the segmented feature(s), to yield respective unsegmented continuous feature(s) upon development of the exposed resist. The disclosed approach allows producing imaging and scatterometry targets which are compatible with device design rules and with optical constraints of the exposure system, without loss of contrast of the produced targets. The methods may be fine-tuned according to the specific characteristics of lithography tools which are used in the production.

公开(公告)号：US09740108B2

公开(公告)日：2017-08-22

申请号：US14457780

申请日：2014-08-12

Applicant: KLA-Tencor Corporation

Inventor： Nuriel Amir

IPC: G03F7/20 ,  G02B26/10

CPC classification number: G03F7/70633 ,  G02B26/103 ,  G03F7/70 ,  G03F7/70483 ,  G03F7/7065 ,  G03F7/70683

Abstract: Scatterometry overlay (SCOL) targets as well as design, production and measurement methods thereof are provided. The SCOL targets have several periodic structures at different measurement directions which share some of their structural target elements or parts thereof. An array of common elements may have symmetry directions which are parallel to the measurement directions and thus enable compacting the targets or alternatively increasing the area use efficiency of the targets. Various configurations enable high flexibility in arranging the number of layers in the target and measurement directions, and carrying out respective overlay measurements among the layers.

公开(公告)号：US20160313658A1

公开(公告)日：2016-10-27

申请号：US15198902

申请日：2016-06-30

Applicant: KLA-TENCOR CORPORATION

Inventor： Tal Marciano ,  Barak Bringoltz ,  Evgeni Gurevich ,  Ido Adam ,  Ze'ev Lindenfeld ,  Zeng Zhao ,  Yoel Feler ,  Daniel Kandel ,  Nadav Carmel ,  Amnon Manassen ,  Nuriel Amir ,  Oded Kaminsky ,  Tal Yaziv ,  Ofer Zaharan ,  Moshe Cooper ,  Roee Sulimarski ,  Tom Leviant ,  Noga Sella ,  Boris Efraty ,  Lilach Saltoun ,  Amir Handelman ,  Eltsafon Ashwal ,  Ohad Bachar

IPC: G03F9/00

Abstract: Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.

Abstract translation: 提供了用于导出计量度量对配方参数的部分连续依赖性的方法，分析衍生依赖性，根据分析确定计量配方，并根据确定的配方进行计量测量。 依赖性可以以景观的形式进行分析，例如灵敏度景观，其中检测到低分辨率或零误差的低灵敏度和/或点或等值线的区域，分析，数字或实验，并用于配置测量参数，硬件 并达到高测量精度。 根据其对灵敏度景观的影响分析过程变化，并且这些效应用于进一步表征过程变化，优化测量结果，使计量学对于不准确性来源更加鲁棒，并且对于不同的目标更灵活 晶圆和可用的测量条件。

公开(公告)号：US09329033B2

公开(公告)日：2016-05-03

申请号：US13834915

申请日：2013-03-15

Applicant: KLA-TENCOR CORPORATION

Inventor： Eran Amit ,  Dana Klein ,  Guy Cohen ,  Amir Widmann ,  Nimrod Shuall ,  Amnon Manassen ,  Nuriel Amir

IPC: G01N37/00 ,  G01B21/04 ,  G03F7/20 ,  G06F11/30

CPC classification number: G01B21/042 ,  G03F7/70625 ,  G03F7/70633

Abstract: Aspects of the present disclosure describe systems and methods for calibrating a metrology tool by using proportionality factors. The proportionality factors may be obtained by measuring a substrate under different measurement conditions. Then calculating the measured metrology value and one or more quality merits. From this information, proportionality factors may be determined. Thereafter the proportionality factors may be used to quantify the inaccuracy in a metrology measurement. The proportionality factors may also be used to determine an optimize measurement recipe. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract translation: 本公开的方面描述了通过使用比例因子来校准度量工具的系统和方法。 可以通过在不同测量条件下测量衬底来获得比例因子。 然后计算测量的度量值和一个或多个质量优点。 根据该信息，可以确定比例因子。 此后，可以使用比例因子来量化度量测量中的不精确度。 比例因子也可用于确定优化测量配方。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

公开(公告)号：US20140136137A1

公开(公告)日：2014-05-15

申请号：US14152562

申请日：2014-01-10

Applicant: KLA-Tencor Corporation

Inventor： Inna Tarshish-Shapir ,  Yoel Feler ,  Anat Marchelli ,  Berta Dinu ,  Vladimir Levinski ,  Boris Efraty ,  Nuriel Amir ,  Mark Ghinovker ,  Amnon Manassen ,  Sigalit Robinzon

IPC: G01R31/28

CPC classification number: G06K9/522 ,  G01B2210/56 ,  G01N21/4788 ,  G06T7/0004 ,  G06T2207/30148 ,  H01L22/12 ,  H01L22/30

Abstract: Methods and systems are provided, which identify specified metrology target abnormalities using selected metrics and classify the identified target abnormalities geometrically to link them to corresponding sources of error. Identification may be carried out by deriving target signals such as kernels from specified regions of interest (ROIs) from corresponding targets on a wafer, calculating the metrics from the target signals using respective functions and analyzing the metrics to characterize the targets.

Abstract translation: 提供了方法和系统，其使用选定的度量来识别指定的计量目标异常，并在几何上对所识别的目标异常进行分类，以将它们链接到相应的误差源。 可以通过从晶片上的相应目标导出来自指定感兴趣区域（ROI）的目标信号（例如来自目标信号的内核）来执行识别，使用各自的功能从目标信号计算度量，并分析用于表征目标的度量。

公开(公告)号：US11060845B2

公开(公告)日：2021-07-13

申请号：US16665759

申请日：2019-10-28

Applicant: KLA-Tencor Corporation

Inventor： Eran Amit ,  Barry Loevsky ,  Andrew Hill ,  Amnon Manassen ,  Nuriel Amir ,  Vladimir Levinski ,  Roie Volkovich

IPC: G01B11/06 ,  G01B11/27 ,  G01N21/95 ,  G01N21/956 ,  G06F30/392 ,  G06F30/398 ,  H01L21/66 ,  G01N21/88

Abstract: Targets, target elements and target design method are provided, which comprise designing a target structure to have a high contrast above a specific contrast threshold to its background in polarized light while having a low contrast below the specific contrast threshold to its background in non-polarized light. The targets may have details at device feature scale and be compatible with device design rules yet maintain optical contrast when measured with polarized illumination and thus be used effectively as metrology targets. Design variants and respective measurement optical systems are likewise provided.

公开(公告)号：US10890436B2

公开(公告)日：2021-01-12

申请号：US13898828

申请日：2013-05-21

Applicant: KLA-Tencor Corporation

Inventor： Nuriel Amir ,  Guy Cohen ,  Vladimir Levinski ,  Michael Adel

IPC: G01B11/14 ,  G03F7/20

Abstract: The disclosure is directed to designing and using an overlay target with orthogonal underlayer dummyfill. According to various embodiments, an overlay target may include one or more segmented overlay pattern elements forming at least one overlay target structure. The overlay target may further include one or more inactive pattern elements forming at least one dummyfill target structure. Each of the one or more inactive pattern elements may include dummyfill segmented along an axis orthogonal to a segmentation axis of at least one proximately disposed overlay pattern element. In some embodiments, each of the target structures or layers may be formed from a separate process layer successively disposed upon a substrate, such as a silicon wafer. In some embodiments, the overlay and dummyfill target structures may be twofold or fourfold rotationally symmetric to allow for certain manufacturing or metrology advantages.

公开(公告)号：US10726169B2

公开(公告)日：2020-07-28

申请号：US14919954

申请日：2015-10-22

Applicant: KLA-Tencor Corporation

Inventor： Michael E. Adel ,  Nuriel Amir ,  Mark Ghinovker ,  Tal Shusterman ,  David Gready ,  Sergey Borodyansky

IPC: G06F30/20

Abstract: Systems and method are provided for analyzing target, process and metrology configuration sensitivities to a wide range of parameters, according to external requirements or inner development and verification needs. Systems comprise the following elements. An input module is arranged to receive parameters relating to targets, target metrology conditions and production processes, to generate target data. A metrology simulation unit is arranged to simulate metrology measurements of targets from the target data and to generate multiple metrics that quantify the simulated target measurements. A sensitivity analysis module is arranged to derive functional dependencies of the metrics on the parameters and to define required uncertainties of the parameters with respect to the derived functional dependencies. Finally, a target optimization module is arranged to rank targets and target metrology conditions with respect to the simulated target measurements.

公开(公告)号：US10698321B2

公开(公告)日：2020-06-30

申请号：US14234540

申请日：2013-11-21

Applicant: KLA-Tencor Corporation

Inventor： Nuriel Amir

IPC: G03F7/20 ,  G01B11/14 ,  G01B11/02

Abstract: Methods of designing metrology targets are provided, which comprise distinguishing target elements from their background area by segmenting the background area and optionally segmenting the target elements. The provided metrology targets may maintain a required feature size when measured yet be finely segmented to achieve process and design rules compatibility which results in higher accuracy of the metrology measurements. Particularly, all transitions between target features and adjacent background features may be designed to maintain a feature size of the features below a certain threshold.

公开(公告)号：US10551749B2

公开(公告)日：2020-02-04

申请号：US15442111

申请日：2017-02-24

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Levinski ,  Amnon Manassen ,  Eran Amit ,  Nuriel Amir ,  Liran Yerushalmi ,  Amit Shaked

IPC: G03F7/20

Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.