公开(公告)号：US10025285B2

公开(公告)日：2018-07-17

申请号：US14755758

申请日：2015-06-30

Applicant: KLA-TENCOR CORPORATION

Inventor： Roie Volkovich ,  Eran Amit ,  Nuriel Amir ,  Michael E. Adel

IPC: G06F17/50 ,  G05B19/048 ,  G03F7/00 ,  H01L21/66 ,  G03F7/20

Abstract: Methods and metrology tool modules embodying the methods are provided. Methods comprise measuring characteristics of intermediate features such as guiding lines in a directed self-assembly (DSA) process, deriving exposure parameters from the measured characteristics; and adjusting production parameters for producing consecutive target features according to the derived exposure parameters. The methods and modules enhance the accuracy of the DSA-produced structures and related measurements.

公开(公告)号：US11971664B2

公开(公告)日：2024-04-30

申请号：US16077214

申请日：2018-07-30

Applicant: KLA-TENCOR CORPORATION

Inventor： Liran Yerushalmi ,  Roie Volkovich

IPC: G03F7/00 ,  G01B11/27 ,  H01L21/68 ,  H01L23/544

CPC classification number: G03F7/70633 ,  G01B11/272 ,  G03F7/70683 ,  G03F7/706835 ,  H01L21/681 ,  H01L23/544 ,  G01B2210/56 ,  H01L2223/5442 ,  H01L2223/54426

Abstract: Process control methods, metrology targets and production systems are provided for reducing or eliminating process overlay errors. Metrology targets have pair(s) of periodic structures with different segmentations, e.g., no segmentation in one periodic structure and device-like segmentation in the other periodic structure of the pair. Process control methods derive metrology measurements from the periodic structures at the previous layer directly following the production thereof, and prior to production of the periodic structures at the current layer, and use the derived measurements to adjust lithography stage(s) that is part of production of the current layer. Production system integrate lithography tool(s) and metrology tool(s) into a production feedback loop that enables layer-by-layer process adjustments.

公开(公告)号：US11302544B2

公开(公告)日：2022-04-12

申请号：US16467968

申请日：2019-05-06

Applicant: KLA-TENCOR CORPORATION

Inventor： Roie Volkovich ,  Renan Milo ,  Liran Yerushalmi ,  Moran Zaberchik ,  Yoel Feler ,  David Izraeli

IPC: H01L21/67 ,  G05B19/418

Abstract: A method for measurement of misregistration in the manufacture of semiconductor device wafers, the method including measuring misregistration between layers of a semiconductor device wafer at a first instance and providing a first misregistration indication, measuring misregistration between layers of a semiconductor device wafer at a second instance and providing a second misregistration indication, providing a misregistration measurement difference output in response to a difference between the first misregistration indication and the second misregistration indication, providing a baseline difference output and ameliorating the difference between the misregistration measurement difference output and the baseline difference output.

公开(公告)号：US10962951B2

公开(公告)日：2021-03-30

申请号：US16013344

申请日：2018-06-20

Applicant: KLA-TENCOR CORPORATION

Inventor： Roie Volkovich ,  Yaniv Abramovitz

IPC: G05B19/401

Abstract: Methods and metrology modules are provided, which derive landscape information (expressing relation(s) between metrology metric(s) and measurement parameters) from produced wafers, identifying therein indications for production process changes, and modify production process parameters with respect to the identified indications, to maintain the production process within specified requirements. Process changes may be detected in wafer(s), wafer lot(s) and batches, and the information may be used to detect root causes for the changes with respect to production tools and steps and to indicate tool aging and required maintenance. The information and its analysis may further be used to optimize the working point parameters, to optimizing designs of devices and/or targets and/or to train corresponding algorithms to perform the identifying, e.g., using training wafers.

公开(公告)号：US10763146B2

公开(公告)日：2020-09-01

申请号：US15751514

申请日：2017-12-11

Applicant: KLA-TENCOR CORPORATION

Inventor： Roie Volkovich ,  Michael Adel ,  Liran Yerushalmi ,  Eitan Herzel ,  Mengmeng Ye ,  Eran Amit

IPC: H01L21/67 ,  G01D18/00 ,  H01L21/66

Abstract: Metrology methods and modules are provided, which comprise carrying out recipe setup procedure(s) and/or metrology measurement(s) using zonal analysis with respect to respective setup parameter(s) and/or metrology metric(s). The zonal analysis comprises relating to spatially variable values of the setup parameter(s) and/or metrology metric(s) across one or more wafers in one or more lots. Wafer zones may be discrete or spatially continuous, and be used to weight one or more parameter(s) and/or metric(s) during any of the stages of the respective setup and measurement processes.

公开(公告)号：US10331050B2

公开(公告)日：2019-06-25

申请号：US15568304

申请日：2017-08-21

Applicant: KLA-Tencor Corporation

Inventor： Eran Amit ,  Roie Volkovich ,  Liran Yerushalmi

IPC: G03B27/32 ,  G03F7/20

Abstract: Lithography systems and methods are provided with enhanced performance based on broader utilization of the integrated metrology tool in the printing tool to handle the metrology measurements in the system in a more sophisticated and optimized way. Additional operation channels are disclosed, enabling the integrated metrology tool to monitor and/or allocate metrology measurements thereby and by a standalone metrology tool with respect to specified temporal limitations of the printing tool; to adjust and optimize the metrology measurement recipes; to provide better process control to optimize process parameters of the printing tool; as well as to group process parameters of the printing tool according to a metrology measurements landscape.

公开(公告)号：US10303835B2

公开(公告)日：2019-05-28

申请号：US14710201

申请日：2015-05-12

Applicant: KLA-TENCOR CORPORATION

Inventor： Eran Amit ,  Raviv Yohanan ,  Tal Itzkovich ,  Nuriel Amir ,  Roie Volkovich ,  Dongsub Choi

IPC: B32B3/10 ,  G06F17/50 ,  G01N21/93 ,  G01N21/956 ,  H01L21/3105 ,  H01L21/311 ,  G03F7/00

Abstract: Target designs methods and targets are provided, in which at least some of the differentiation between target elements and their background is carried out by segmenting either of them. Directed self-assembly (DSA) processes are used to generate fine segmentation, and various characteristics of the polymer lines and their guiding lines are used to differentiate target elements from their background. Target designs and design principles are disclosed in relation to the DSA process, as well as optimization of the DSA process to yield high metrology measurement accuracy in face of production inaccuracies. Furthermore, designs and methods are provided for enhancing and using ordered regions of a DSA-produced polymer surface as target elements and as hard masks for production processes. The targets and methods may be configured to enable metrology measurements using polarized light to distinguish target elements or DSA features.

公开(公告)号：US20160103946A1

公开(公告)日：2016-04-14

申请号：US14974732

申请日：2015-12-18

Applicant: KLA-Tencor Corporation

Inventor： Mohamed El Kodadi ,  Nuriel Amir ,  Roie Volkovich ,  Vladimir Levinski ,  Yoel Feler ,  Daniel Kandel ,  Nadav Gutman ,  Stilian Pandev ,  Dzimtry Sanko

IPC: G06F17/50 ,  G01N21/47

CPC classification number: G06F17/5081 ,  G01N21/4785 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072

Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

Abstract translation: 提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元件的周期性结构。 这些元件沿着与第一方向垂直的第二方向具有第二间距周期性，并且通过具有第二间距的交替的，聚焦敏感的和不对焦的图案在第二方向上表征。 在所产生的目标中，第一节距可以是关于装置间距，而第二节距可以是数倍。 可以产生第一个不对焦模式以产生第一临界尺寸，并且可以产生第二焦点敏感图案以仅在满足指定的焦点要求时产生可等于第一临界尺寸的第二临界尺寸， 或者基于沿着垂直方向的较长的间距来提供零和第一衍射级的散射测量。