公开(公告)号：US5969423A

公开(公告)日：1999-10-19

申请号：US892718

申请日：1997-07-15

Applicant: Kanwal K. Raina ,  David H. Wells

Inventor： Kanwal K. Raina ,  David H. Wells

IPC: C23C14/00 ,  C23C14/18 ,  H01L21/285 ,  H01L21/3205 ,  H01L29/45 ,  H01L29/49 ,  H01L23/48

CPC classification number: C23C14/185 ,  C23C14/0057 ,  H01L21/2855 ,  H01L21/32051 ,  H01L29/458 ,  H01L29/4908 ,  Y10S438/937

Abstract: An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The alumininum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.

Abstract translation: 在膜内具有氧含量的含铝膜。 在铝或铝合金溅射沉积到半导体衬底上时，通过将氢气和氧气与氩气一起引入溅射沉积真空室中形成含铝膜。 这样形成的含铝膜不含无铝，具有低电阻率，与纯铝相比相对较低的粗糙度，良好的机械强度和较低的残余应力。

公开(公告)号：US07088037B2

公开(公告)日：2006-08-08

申请号：US10086555

申请日：2002-03-04

Applicant: Kanwal K. Raina

Inventor： Kanwal K. Raina

IPC: H01J1/304 ,  H01J1/62

CPC classification number: H01J9/025

Abstract: A system and method for fabricating a FED device is disclosed. The system and method provide for use of PECVD hydrogenation followed by nitrogen plasma treatment of the tip of the current emitter of the FED device. The use of this process greatly reduces the native oxides in the tip of the current emitter. Such native oxides function as undesirable insulators degrading current emission. By reducing the amount of oxides in the tip, this invention provides for an increase in the current emission of the FED device.

Abstract translation: 公开了一种用于制造FED装置的系统和方法。 该系统和方法提供使用PECVD氢化，然后对FED装置的电流发射器的尖端进行氮等离子体处理。 该方法的使用大大降低了电流发射极尖端的天然氧化物。 这种天然氧化物起到降低电流发射的不期望的绝缘体的作用。 通过减少尖端中的氧化物的量，本发明提供了FED装置的电流发射的增加。

公开(公告)号：US06911766B2

公开(公告)日：2005-06-28

申请号：US10644443

申请日：2003-08-19

Applicant: Kanwal K. Raina ,  Benham Moradi

Inventor： Kanwal K. Raina ,  Benham Moradi

IPC: H01J1/02 ,  H01J1/304 ,  H01J1/62 ,  H01J9/02 ,  H01J19/02 ,  H01J63/04

CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

Abstract translation: 这里描述的是用于场发射显示装置等的电阻层及其制造方法。 电阻层是掺杂有氮和磷的非晶硅层。 电阻层中的氮浓度优选为约5至15原子％。 硅中的氮和磷的存在防止Si原子扩散到金属导电层如铝中，甚至达到扩散和封装温度。 氮和磷还可以防止在电阻层和金属导体之间的边界处形成缺陷。 这导致更好地控制电阻器的短路和改善电阻率。

公开(公告)号：US06838815B2

公开(公告)日：2005-01-04

申请号：US10060842

申请日：2002-01-29

Applicant: Kanwal K. Raina

Inventor： Kanwal K. Raina

IPC: H01J3/02 ,  H01J1/62 ,  H01J1/304

CPC classification number: H01J3/022

Abstract: This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In one embodiment, the introduction of nitrogen creates an aluminum nitride subphase which pins down hillocks in the aluminum film to maintain a substantially smooth surface. The film remains substantially hillock-free even after subsequent thermal processing. The aluminum nitride subphase causes only a nominal increase in resistivity (resistivities remain below about 12 μΩ-cm), thereby making the film suitable as an electrically conductive layer for integrated circuit or display devices.

公开(公告)号：US06638399B2

公开(公告)日：2003-10-28

申请号：US10200472

申请日：2002-07-19

Applicant: Kanwal K. Raina

Inventor： Kanwal K. Raina

IPC: C23C1500

CPC classification number: H01J3/022

Abstract: This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In one embodiment, the introduction of nitrogen creates an aluminum nitride subphase which pins down hillocks in the aluminum film to maintain a substantially smooth surface. The film remains substantially hillock-free even after subsequent thermal processing. The aluminum nitride subphase causes only a nominal increase in resistivity (resistivities remain below about 12 &mgr;&OHgr;-cm), thereby making the film suitable as an electrically conductive layer for integrated circuit or display devices.

Abstract translation: 本发明提供一种导电铝膜及其形成方法，其中非导电杂质掺入铝膜中。 在一个实施方案中，引入氮产生氮化铝亚相，其将铝膜中的小丘钉下来以保持基本平滑的表面。 即使在后续的热处理之后，该膜仍然基本上无小丘状。 氮化铝次相仅导致电阻率的标称增加（电阻率保持在约12μΩ-cm以下），从而使得该膜适合作为用于集成电路或显示器件的导电层。

公开(公告)号：US06635983B1

公开(公告)日：2003-10-21

申请号：US09388697

申请日：1999-09-02

Applicant: Kanwal K. Raina ,  Benham Moradi

Inventor： Kanwal K. Raina ,  Benham Moradi

IPC: H01J1902

CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

Abstract translation: 这里描述的是用于场发射显示装置等的电阻层及其制造方法。 电阻层是掺杂有氮和磷的非晶硅层。 电阻层中的氮浓度优选为约5至15原子％。 硅中的氮和磷的存在防止Si原子扩散到金属导电层如铝中，甚至达到扩散和封装温度。 氮和磷还可以防止在电阻层和金属导体之间的边界处形成缺陷。 这导致更好地控制电阻器的短路和改善电阻率。

公开(公告)号：US06545407B1

公开(公告)日：2003-04-08

申请号：US09568706

申请日：2000-05-11

Applicant: Kanwal K. Raina

Inventor： Kanwal K. Raina

IPC: H01J162

CPC classification number: H01J3/022 ,  H01J9/025 ,  H01J31/127

Abstract: A field emission device having a gate electrode structure in which a nanocrystalline or microcrystalline silicon layer is positioned over a silicon dioxide dielectric layer. Also disclosed are methods for forming the field emission device. The nanocrystalline or microcrystalline silicon layer forms a bond with the dielectric layer that is sufficiently strong to prevent delamination during a chemical-mechanical planarization operation that is conducted during formation of the field emission device. The nanocrystalline or microcrystalline silicon layer is deposited by PECVD in an atmosphere that contains silane and hydrogen at a ratio in a range from about 1:15 to about 1:40. Multiple field emission devices may be formed and included in a flat panel display for computer monitors, telecommunications devices, and the like.

Abstract translation: 一种场致发射器件，具有其中纳米晶体或微晶硅层位于二氧化硅电介质层上方的栅电极结构。 还公开了形成场发射装置的方法。 纳米晶体或微晶硅层与电介质层形成结合，其足够强以防止在形成场致发射器件期间进行的化学 - 机械平面化操作期间的分层。 纳米晶体或微晶硅层通过PECVD在含有硅烷和氢气的气氛中以约1:15至约1:40的比例沉积。 可以形成多个场致发射器件并将其包括在用于计算机监视器，电信设备等的平板显示器中。

公开(公告)号：US06264750B1

公开(公告)日：2001-07-24

申请号：US09643112

申请日：2000-08-21

Applicant: Raghvendra K. Pandey ,  Kanwal K. Raina ,  Narayanan Solayappan

Inventor： Raghvendra K. Pandey ,  Kanwal K. Raina ,  Narayanan Solayappan

IPC: C23C1400

CPC classification number: C23C14/024 ,  C23C14/06

Abstract: A method for forming SbSI thin films is formed. In the first step of the method, a substrate (14) is provided. Next a buffer layer (16) is formed on the substrate (14). Then, a SbSI source (12) is provided. The SbSI source (12) and buffer layer (16) with substrate (14) are placed in an ampoule (10). The ampoule is heated in a two-zone furnace (11). This causes the SbSI source (12) to form a vapor which reacts with the buffer layer (14) to form a thin film of SbSI.

Abstract translation: 形成SbSI薄膜的形成方法。 在该方法的第一步骤中，提供衬底（14）。 接下来，在衬底（14）上形成缓冲层（16）。 然后，提供SbSI源（12）。 将具有衬底（14）的SbSI源（12）和缓冲层（16）放置在安瓿（10）中。 将安瓿在双区炉（11）中加热。 这使得SbSI源（12）形成与缓冲层（14）反应形成SbSI薄膜的蒸气。

公开(公告)号：US5407906A

公开(公告)日：1995-04-18

申请号：US194494

申请日：1994-02-10

Applicant: Raghvendra K. Pandey ,  Kanwal K. Raina ,  Narayanan Solayappan

Inventor： Raghvendra K. Pandey ,  Kanwal K. Raina ,  Narayanan Solayappan

IPC: C30B19/02

CPC classification number: C30B19/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S428/93 ,  Y10S505/729

Abstract: A substantially single phase, single crystalline, highly epitaxial film of Bi.sub.2 CaSr.sub.2 Cu.sub.2 O.sub.8 superconductor which has a T.sub.c (zero resistance) of 83K is provided on a lattice-matched substrate with no intergrowth. This film is produced by a Liquid Phase Epitaxy method which includes the steps of forming a dilute supercooled molten solution of a single phase superconducting mixture of oxides of Bi, Ca, Sr, and Cu having an atomic ratio of about 2:1:2:2 in a nonreactive flux such as KCl, introducing the substrate, e.g., NdGaO.sub.3, into the molten solution at 850.degree. C., cooling the solution from 850.degree. C. to 830.degree. C. to grow the film and rapidly cooling the substrate to room temperature to maintain the desired single phase, single crystalline film structure.

Abstract translation: 具有TcK（零电阻）为83K的Bi2CaSr2Cu2O8超导体的基本上单相，单晶，高外延膜被提供在晶格匹配的衬底上，没有共生。 该膜通过液相外延法制造，其包括以下步骤：形成原子比为约2:1:2:2的Bi，Ca，Sr和Cu的氧化物的单相超导混合物的稀释过冷熔融溶液; 2在非反应性助熔剂如KCl中，在850℃下将基底例如NdGaO 3引入熔融溶液中，将溶液从850℃冷却至830℃，以使膜生长并快速冷却基底至 室温保持所需的单相，单晶膜结构。

公开(公告)号：US07052923B2

公开(公告)日：2006-05-30

申请号：US10931314

申请日：2004-09-01

Applicant: Kanwal K. Raina

Inventor： Kanwal K. Raina

IPC: H01L21/00 ,  H01L31/26

CPC classification number: H01J3/022

Abstract: This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In one embodiment, the introduction of nitrogen creates an aluminum nitride subphase which pins down hillocks in the aluminum film to maintain a substantially smooth surface. The film remains substantially hillock-free even after subsequent thermal processing. The aluminum nitride subphase causes only a nominal increase in resistivity (resistivities remain below about 12 μΩ-cm), thereby making the film suitable as an electrically conductive layer for integrated circuit or display devices.

Abstract translation: 本发明提供一种导电铝膜及其形成方法，其中非导电杂质掺入铝膜中。 在一个实施方案中，引入氮产生氮化铝亚相，其将铝膜中的小丘钉下来以保持基本平滑的表面。 即使在后续的热处理之后，该膜仍然基本上无小丘状。 氮化铝次相仅导致电阻率的标称增加（电阻率保持在约12μΩ-cm以下），从而使得该膜适合作为用于集成电路或显示器件的导电层。