摘要:
An overlay marker for use with a scatterometer includes two overlying two-dimensional gratings. The two gratings have the same pitch but the upper grating has a lower duty ratio. Cross-talk between X and Y overlay measurements can therefore be avoided. The gratings may be directly overlying or off set so as to be interleaved in one or two directions.
摘要:
A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system.
摘要:
An inspection apparatus measures a property of a substrate including a periodic structure. An illumination system provides a beam of radiation with an illumination profile including a plurality of illuminated portions. A radiation projector projects the beam of radiation onto the substrate. A detector detects radiation scattered from the periodic structure and separately detects first order diffracted radiation and at least one higher order of diffracted radiation of each of the illuminated portions. A processor determines the property of the substrate from the detected radiation. The plurality of illuminated portions are arranged such that first order diffracted radiation arising from one or more of the illuminated portions are not overlapped by zeroth order or first order diffracted radiation arising from any other of the illuminated portions. Furthermore, the plurality of illuminated portions are arranged such that first order diffracted radiation arising from the one or more of the illuminated portions are overlapped by at least one of the higher orders of diffracted radiation arising from any other of the illuminated portions.
摘要:
An overlay target on a substrate includes two sets of gratings; the first set having a pitch P1 and the second set having a pitch P2 and each set including a grating with an orientation substantially perpendicular to the first grating of each set. When a layer of resist is to be aligned with the layer below it, the same overlay marks are provided on the upper layer and the relative positions of the overlay targets on the upper layer and the lower layer are compared by shining an overlay beam on to the overlay targets and measuring the diffraction spectrum of the reflected beam. Having two sets of overlay targets with different pitches in gratings enables the measurement of overlay errors that are greater than the pitch of either one of the overlay gratings.
摘要:
According to an example, a first layer of a substrate comprises a plurality of gratings having a periodicity P. A second layer of the substrate comprises a plurality of gratings, overlapping with the first set of gratings, and having a periodicity of NP, where N is an integer greater than 2. A first set of gratings has a bias of +d and the second set of gratings has a bias of −d. A beam of radiation is projected onto the gratings and the angle resolved spectrum of the reflected radiation detected. The overlay error is then calculated using the angle resolved spectrum of the reflected radiation.
摘要:
A fault detection and classification method is disclosed that uses raw back-focal-plane image data of radiation from a substrate surface, detected by a scatterometer detector, to determine a variation in the raw data and correlate the variation in the raw data with a possible fault in a lithographic apparatus or a process that patterned the substrate surface. The correlation is carried out by comparing the variation in the raw data with known metrology data. Once a fault has been determined, a user may be notified of the fault.
摘要:
In a method of measuring asymmetry in a scatterometer, a target portion is illuminated twice, first with 0° of substrate rotation and secondly with 180° of substrate rotation. One of those images is rotated and then that rotated image is subtracted from the other image. In this way, asymmetry of the scatterometer can be corrected.
摘要:
In a device manufacturing method and a metrology apparatus, metrology measurements are executed using radiation having a first wavelength. Subsequently a grid of conducting material is applied on the substrate, the grid having grid openings which in a first direction in the plane of the grid are smaller than the first wavelength. The space in the scribe lane where the measurement target was, is now shielded and may be used again in further layers or processing steps of the substrate.
摘要:
A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes two reference gratings provided in the substrate and two measurement gratings on top of the reference gratings, the measurement gratings being similar to the reference gratings, and oppositely biased in a single direction relative to the respective reference gratings. An overlay measurement device with an image sensor is used for obtaining pixel data of a measurement spot in each of the two measurement gratings. Asymmetry for each pixel in the measurement spot is measured, and from the pixel asymmetry measurements in associated pixels of each of the two measurement gratings an overlay value and a process dependent value is determined, as well as a quality indicator for the overlay value and the process dependent value.
摘要:
An inspection system is arranged to measure an overlay error by projecting a plurality of radiation beams, differing in wavelength and/or polarization, onto two targets. A first radiation beam is projected onto a first target and the reflected radiation A1+ is detected. The first target comprises two gratings having a bias +d with respect to each other. The first radiation beam is also projected on to a second target, which comprises two gratings having a bias −d with respect to each other, and the reflected radiation A1− is detected. A second radiation beam, having a different wavelength and/or polarization from the first radiation beam, is projected onto the first target and reflected radiation A2+ is detected and projected onto the second target and reflected radiation A2− is detected. Detected radiations A1+, A1−, A2+, and A2− is used to determine the overlay error.