公开(公告)号：US08178425B2

公开(公告)日：2012-05-15

申请号：US13011266

申请日：2011-01-21

申请人： Tasuku Koyanagi ,  Hiroshi Morikazu

发明人： Tasuku Koyanagi ,  Hiroshi Morikazu

IPC分类号： H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC分类号： B23K26/0853 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/354 ,  B23K26/40 ,  B23K26/53 ,  B23K26/703 ,  B23K37/0408 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L33/0095

摘要： An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of crossing division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate to the intersections of the crossing division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the intersections of the crossing division lines, thereby forming a plurality of modified dots as division start points inside the substrate at the intersections of the crossing division lines; and a crack growing step of applying a CO2 laser beam along the division lines to grow cracks inside the substrate from the division start points.

摘要翻译： 一种用于将光学器件晶片分成多个单独的光学器件的光学器件晶片处理方法。 光学器件晶片由衬底和形成在衬底的前侧上的半导体层组成。 光学器件由形成在半导体层上的多个交叉分割线划分。 光学元件晶片处理方法包括：分割开始点形成步骤，在激光束的焦点设置在基板的内部的状态下，将具有透射波长的激光束施加到基板的交叉分割线的交叉点 与交叉分割线的交点相对应的区域，从而在交叉分割线的交点处在基板内形成多个修改点作为分割开始点; 以及沿分割线施加CO 2激光束以从分割开始点在基板内生长裂纹的裂纹扩展步骤。

公开(公告)号：US20110195535A1

公开(公告)日：2011-08-11

申请号：US13011266

申请日：2011-01-21

申请人： Tasuku Koyanagi ,  Hiroshi Morikazu

发明人： Tasuku Koyanagi ,  Hiroshi Morikazu

IPC分类号： H01L21/304

CPC分类号： B23K26/0853 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/354 ,  B23K26/40 ,  B23K26/53 ,  B23K26/703 ,  B23K37/0408 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L33/0095

摘要： An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of crossing division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate to the intersections of the crossing division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the intersections of the crossing division lines, thereby forming a plurality of modified dots as division start points inside the substrate at the intersections of the crossing division lines; and a crack growing step of applying a CO2 laser beam along the division lines to grow cracks inside the substrate from the division start points.

摘要翻译： 一种用于将光学器件晶片分成多个单独的光学器件的光学器件晶片处理方法。 光学器件晶片由衬底和形成在衬底的前侧上的半导体层组成。 光学器件由形成在半导体层上的多个交叉分割线划分。 光学元件晶片处理方法包括：分割开始点形成步骤，在激光束的焦点设置在基板的内部的状态下，将具有透射波长的激光束施加到基板的交叉分割线的交叉点 与交叉分割线的交点相对应的区域，从而在交叉分割线的交点处在基板内形成多个修改点作为分割开始点; 以及沿分割线施加CO 2激光束以从分割开始点在基板内生长裂纹的裂纹扩展步骤。

公开(公告)号：US20100297855A1

公开(公告)日：2010-11-25

申请号：US12770290

申请日：2010-04-29

申请人： Hiroshi Morikazu ,  Noboru Takeda ,  Hirokazu Matsumoto

发明人： Hiroshi Morikazu ,  Noboru Takeda ,  Hirokazu Matsumoto

IPC分类号： H01L21/302

CPC分类号： H01L21/67092 ,  B23K26/032 ,  B23K26/0622 ,  B23K26/0648 ,  B23K26/073 ,  B23K26/082 ,  B23K26/0853 ,  B23K26/0876 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/78

摘要： A device processing method for improving the die strength of a device divided from a semiconductor wafer. The device processing method includes a chamfering step of applying a pulsed laser beam having an absorption wavelength to the device along the periphery of the device to thereby chamfer the periphery of the device, wherein the pulse width of the pulsed laser beam to be applied in the chamfering step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.

摘要翻译： 一种用于提高从半导体晶片划分的器件的裸片强度的器件处理方法。 该装置处理方法包括：倒角步骤，沿着装置的周边向器件施加具有吸收波长的脉冲激光束，从而使装置的周边倒角，其中施加在该装置中的脉冲激光束的脉冲宽度 倒角步长设定为2ns以下，峰值能量密度设定在5〜200GW / cm 2的范围。

公开(公告)号：US20100297830A1

公开(公告)日：2010-11-25

申请号：US12771749

申请日：2010-04-30

申请人： Hiroshi Morikazu ,  Noboru Takeda ,  Hirokazu Matsumoto

发明人： Hiroshi Morikazu ,  Noboru Takeda ,  Hirokazu Matsumoto

IPC分类号： H01L21/268

CPC分类号： H01L21/78 ,  B23K26/0006 ,  B23K26/0626 ,  B23K26/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/67132 ,  H01L21/67144 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68336

摘要： A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division lines on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.

摘要翻译： 一种半导体晶片的激光加工方法，包括：槽形成工序，沿着形成在半导体晶片上的分割线，向半导体晶片施加具有吸收波长的脉冲激光束，从而沿着半导体上的分割线形成激光加工槽 晶片，其中在槽形成步骤中施加的脉冲激光束的脉冲宽度设定为2ns以下，峰值能量密度设定在5〜200GW / cm 2的范围内。

公开(公告)号：US07767550B2

公开(公告)日：2010-08-03

申请号：US12018663

申请日：2008-01-23

申请人： Hiroshi Morikazu

发明人： Hiroshi Morikazu

IPC分类号： H01L21/301

CPC分类号： H01L21/78 ,  B23K26/0622 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/60 ,  B23K2103/50 ,  H01L21/31105

摘要： A wafer laser processing method for forming a groove in a wafer having a plurality of areas which are sectioned by streets formed in a lattice pattern on the front surface of a substrate, a device being formed in each of the plurality of areas, and an insulating film being formed on the surfaces of the devices, by applying a pulse laser beam along the streets, the method comprising a heating step for applying a first pulse laser beam set to an output for preheating the insulating film so as to soften it to the insulating film and a processing step for applying a second pulse laser beam set to an output for processing the insulating film and the substrate to the spot position of the first pulse laser beam applied in the heating step, the heating step and the processing step being carried out along the streets alternately.

摘要翻译： 一种用于在晶片上形成沟槽的晶片激光加工方法，所述晶片具有多个区域，所述多个区域在基板的前表面上形成为格子状的街道形成，所述多个区域中的每个区域中形成有绝缘体 通过沿着街道施加脉冲激光束，形成在装置的表面上的膜，该方法包括加热步骤，用于将第一脉冲激光束组施加到用于预热绝缘膜的输出端，以将其软化到绝缘 膜和加工步骤，用于将第二脉冲激光束组施加到用于处理绝缘膜和基板的输出到加热步骤中施加的第一脉冲激光束的光斑位置，加热步骤和加工步骤被执行 沿街交替。

公开(公告)号：US07642485B2

公开(公告)日：2010-01-05

申请号：US11338761

申请日：2006-01-25

申请人： Noboru Takeda ,  Hiroshi Morikazu ,  Satoshi Genda ,  Yukio Morishige

发明人： Noboru Takeda ,  Hiroshi Morikazu ,  Satoshi Genda ,  Yukio Morishige

IPC分类号： B23K26/02

CPC分类号： B23K37/0235 ,  B23K26/0622 ,  B23K26/0853 ,  B23K26/0876 ,  B23K26/40 ,  B23K37/0408 ,  B23K37/0435 ,  B23K2103/172 ,  B23K2103/50

摘要： A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other, wherein the chuck table comprises a body and a workpiece holding member disposed on the top surface of the body, and the workpiece holding member is made of a material which transmits a laser beam having a predetermined wavelength.

摘要翻译： 一种激光束处理机，包括用于保持工件的卡盘台，用于将激光束施加到保持在卡盘台上的工件的激光束施加装置，以及用于移动卡盘台和激光束施加装置的加工进给装置 相对于彼此，其中所述卡盘台包括主体和设置在所述主体的顶表面上的工件保持构件，并且所述工件保持构件由透射具有预定波长的激光束的材料制成。

公开(公告)号：US07629229B2

公开(公告)日：2009-12-08

申请号：US12363318

申请日：2009-01-30

申请人： Hiroshi Morikazu

发明人： Hiroshi Morikazu

IPC分类号： H01L21/46

CPC分类号： H01L21/67092 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/0626 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/78

摘要： In a laser beam processing method, when a laser beam is emitted along a second predetermined dividing line to form a second groove intersecting a first groove previously formed, the power output of the laser beam is allowed to be a first power output in a first interval, that is, until the second predetermined dividing line reaches a position immediately before the first groove. In a second interval from the position close to the first groove to the first groove reached by the second predetermined dividing line, the power output of the laser beam is set to a second power output lower than the first power output. Thus, overheat on the periphery of the second interval can be suppressed.

摘要翻译： 在激光束处理方法中，当沿着第二预定分割线发射激光束以形成与预先形成的第一凹槽相交的第二凹槽时，激光束的功率输出被允许为第一间隔中的第一功率输出 即，直到第二预定分割线到达紧接在第一凹槽之前的位置。 在从靠近第一凹槽的位置到由第二预定分割线到达的第一凹槽的位置的第二间隔中，激光束的功率输出被设置为低于第一功率输出的第二功率输出。 因此，可以抑制第二间隔的周边的过热。

公开(公告)号：US07589332B2

公开(公告)日：2009-09-15

申请号：US11900844

申请日：2007-09-13

申请人： Keiji Nomaru ,  Hiroshi Morikazu

发明人： Keiji Nomaru ,  Hiroshi Morikazu

IPC分类号： G21G5/00 ,  B23K26/38

CPC分类号： H01L21/76898 ,  B23K26/0622 ,  B23K26/382 ,  B23K26/40 ,  B23K2103/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a via-hole formation method of forming a via-hole reaching a bonding pad, in a substrate of a wafer in which a plurality of devices are formed on a surface of the substrate and the bonding pad is formed on each of the devices, a pulse laser beam whose energy distribution is shaped into a top-hat shape is emitted to form a via-hole reaching a via-hole.

摘要翻译： 在形成到达焊盘的通孔的通孔形成方法中，在基板的表面上形成有多个器件的晶片的基板和在每个器件上形成接合焊盘的通孔形成方法中， 发射其能量分布形成顶帽形状的脉冲激光束，以形成到达通孔的通孔。

公开(公告)号：US07368682B2

公开(公告)日：2008-05-06

申请号：US11313735

申请日：2005-12-22

申请人： Hiroshi Morikazu

发明人： Hiroshi Morikazu

IPC分类号： B23K26/00

CPC分类号： B23K26/702 ,  B23K26/08 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50

摘要： A processing apparatus contains a holding member for holding a workpiece, and a laser beam shining member for shining a laser beam at the workpiece held on the holding member. The holding member has a holding plate and the workpiece is placed on the holding plate. The holding plate is composed of a plate-shaped body formed from polychlorotrifluoroethylene, and a film formed from polytetrafluoroethylene is superposed on an upper surface of the plate-shaped body.

摘要翻译： 一种处理装置包括用于保持工件的保持构件和用于在保持在保持构件上的工件上照射激光束的激光束照射构件。 保持构件具有保持板，并且工件被放置在保持板上。 保持板由聚氯三氟乙烯形成的板状体构成，由聚四氟乙烯形成的膜叠层在板状体的上表面上。

公开(公告)号：US20080067157A1

公开(公告)日：2008-03-20

申请号：US11898505

申请日：2007-09-12

申请人： Hiroshi Morikazu

发明人： Hiroshi Morikazu

IPC分类号： B23K26/38

CPC分类号： H01L21/76898 ,  B23K26/082 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/389 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/02057 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a via hole reaching a bonding pad in a wafer having a plurality of devices on the front surface of a substrate and bonding pads on each of the devices, by applying a laser beam from the rear surface side of the substrate, comprising the steps of forming an annular groove by applying a laser beam to an annular area surrounding a via hole forming area on the rear surface of the substrate; and forming a via hole reaching a bonding pad by applying a laser beam to the via hole forming area surrounded by the annular groove from the rear surface side of the substrate.

摘要翻译： 一种通过从衬底的后表面侧施加激光束，形成通孔到达衬底的接合焊盘的方法，所述接合焊盘具有衬底前表面上的多个器件和每个器件上的接合焊盘，该激光束包括 通过将激光束施加到围绕基板后表面上的通孔形成区域的环形区域来形成环形槽的步骤; 以及通过将激光束从所述基板的后表面侧的所述环形槽包围的通路孔形成区域形成到达焊盘的通孔。