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公开(公告)号:US5787118A
公开(公告)日:1998-07-28
申请号:US636152
申请日:1996-04-22
申请人: Koji Ueda
发明人: Koji Ueda
IPC分类号: H04B1/76 , H04B3/06 , H04B7/005 , H04B7/02 , H04B7/08 , H04L1/06 , H04L25/03 , H04L27/01 , H03H7/30
CPC分类号: H04L1/06 , H04B7/082 , H04L25/03038 , H04L25/03057 , H04L2025/03541 , H04L2025/03573
摘要: An adaptive equalizer which has a decision feedback adaptive equalizer unit 41, a linear adaptive equalizer unit 42, comparing circuit 47 which compares integrated equalizing error value of the decision feedback adaptive equalizer 41 with integrated estimation error value of the linear adaptive equalizer unit 42, and selecting circuit 48. The selecting circuit 48 selects one of the equalizer units 41 and 42, which has the better performance based on the result of the comparison of comparing circuit 47.
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公开(公告)号:US5706930A
公开(公告)日:1998-01-13
申请号:US637356
申请日:1996-04-24
申请人: Tsutomu Sahoda , Koji Ueda , Hidenori Miyamoto , Toru Arikawa
发明人: Tsutomu Sahoda , Koji Ueda , Hidenori Miyamoto , Toru Arikawa
IPC分类号: B65G49/07 , H01L21/027 , H01L21/677 , H01L21/68 , B65G29/00
CPC分类号: H01L21/681 , H01L21/67796 , Y10S414/135
摘要: When a carrier arm is retracted, a semiconductor wafer carried thereon passes between three light-emitting elements and three light-detecting elements associated therewith. At this time, a controller determines six points on the outer circumferential edge of the semiconductor wafer based on signals from sensors made up of the light-emitting elements and the light-detecting elements. The controller selects three of the determined points, determines the center of a circumscribed circle passing through the selected three points, and regards the determined center as the center of the semiconductor wafer. Then, the controller controls movement of the semiconductor wafer toward a rotary-cup coating device, an evacuating drying device, or an edge cleaning device based on the center of the semiconductor wafer.
摘要翻译: 当承载臂缩回时,其上承载的半导体晶片通过三个发光元件和与其相关联的三个光检测元件。 此时,控制器基于由发光元件和光检测元件构成的传感器的信号来确定半导体晶片的外周边缘上的六个点。 控制器选择三个确定的点,确定通过所选三个点的外接圆的中心,并将确定的中心视为半导体晶片的中心。 然后,控制器基于半导体晶片的中心来控制半导体晶片朝向旋转杯式涂布装置,抽真空干燥装置或边缘清洁装置的移动。
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23.
公开(公告)号:US5591262A
公开(公告)日:1997-01-07
申请号:US410315
申请日:1995-03-24
申请人: Hiroyoshi Sago , Hideya Kobari , Koji Ueda , Hidenori Miyamoto , Ryuzo Takatsuki
发明人: Hiroyoshi Sago , Hideya Kobari , Koji Ueda , Hidenori Miyamoto , Ryuzo Takatsuki
IPC分类号: G03F7/16 , B05C11/08 , H01L21/00 , H01L21/027 , H01L21/304 , H01L21/306 , H01L21/683 , B05C7/00
CPC分类号: H01L21/67051 , Y10S134/902
摘要: The invention disclosed defined a vertically extending passage through the rotary center of an inner cup or the rotary center of a spinner in a notary chemical treater, disposes a stationary cleaning fluid nozzle in the passage, and injects the cleaning fluid from the nozzle to clean a lid of the rotary chemical treater and the underside of an object treatment within the treater. The underside of the lid and the underside of the objective part are efficiently cleaned, and the need for sealing the movable parts against the cleaning fluid is eliminated because the nozzle is stationary, ensuring the prevention of the cleaning fluid from leaking.
摘要翻译: 本发明公开了一种通过内杯的旋转中心或旋转器在公证化学处理器中的旋转中心的垂直延伸的通道,将固定的清洁流体喷嘴置于通道中,并将喷嘴从喷嘴喷射到清洁 旋转化学处理器的盖子和处理器内的物体处理的下侧。 盖子的下侧和目标部分的下侧被有效地清洁,并且由于喷嘴是静止的,消除了将可动部件密封在清洁流体上的需要,从而确保防止清洗液体泄漏。
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公开(公告)号:US5541956A
公开(公告)日:1996-07-30
申请号:US292612
申请日:1994-08-18
申请人: Koji Ueda
发明人: Koji Ueda
IPC分类号: H04B1/76 , H04B3/06 , H04B7/005 , H04B7/02 , H04B7/08 , H04L1/06 , H04L25/03 , H04L27/01 , H03H7/30
CPC分类号: H04L1/06 , H04B7/082 , H04L25/03038 , H04L25/03057 , H04L2025/03541 , H04L2025/03573
摘要: An adaptive equalizer which has a decision feedback adaptive equalizer unit 41, a linear adaptive equalizer unit 42, comparing circuit 47 which compares integrated equalizing error value of the decision feedback adaptive equalizer 41 with integrated estimation error value of the linear adaptive equalizer unit 42, and selecting circuit 48. The selecting circuit 48 selects one of the equalizer units 41 and 42, which has the better performance based on the result of the comparison of comparing circuit 47.
摘要翻译: 具有判决反馈自适应均衡器单元41,线性自适应均衡器单元42的自适应均衡器,将判决反馈自适应均衡器41的积分均衡误差值与线性自适应均衡器单元42的积分估计误差值进行比较的比较电路47,以及 选择电路48根据比较电路47的比较结果,选择均衡器单元41和42中的一个,其具有更好的性能。
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公开(公告)号:US09640584B2
公开(公告)日:2017-05-02
申请号:US14645239
申请日:2015-03-11
申请人: Makoto Nagamine , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Kazuya Sawada , Toshihiko Nagase
发明人: Makoto Nagamine , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Kazuya Sawada , Toshihiko Nagase
CPC分类号: H01L27/228 , H01L43/08 , H01L43/12
摘要: According to one embodiment, a magnetoresistive memory device, includes a metal buffer layer provided on a substrate, a crystalline metal nitride buffer layer provided on the metal buffer layer, and a magnetoresistive element provided on the metal nitride buffer layer. The metal nitride buffer layer and the metal buffer layer contain a same material.
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公开(公告)号:US09624647B2
公开(公告)日:2017-04-18
申请号:US14115282
申请日:2012-05-11
申请人: Koji Yamashita , Masayuki Komiyama , Kazushige Koiwai , Koji Ueda , Kengo Maeda
发明人: Koji Yamashita , Masayuki Komiyama , Kazushige Koiwai , Koji Ueda , Kengo Maeda
CPC分类号: E02F9/2296 , E02F9/123 , E02F9/2235 , E02F9/2285 , F15B9/03 , F15B9/14 , G05B11/14 , G05B2219/45012 , Y10T137/86027
摘要: A slewing-type working machine includes: a slewing motor which is a hydraulic motor for slewing; a variable-displacement hydraulic pump; a slewing operation device including an operation member; a control valve controlling the slewing motor based on an operation signal thereof; a pump regulator; a relief valve letting excess fluid to a tank; operation detectors detecting an operation direction and amount of the operation member; a motor rotational speed detector; and a controller controlling a discharge flow rate of the hydraulic pump. The controller obtains a deviation between a target rotational speed of the slewing motor obtained from a slewing operation amount and an actual rotational speed detected by the motor rotational speed detector, and controls the discharge flow rate to make the deviation closer to 0.
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27.
公开(公告)号:US09209386B2
公开(公告)日:2015-12-08
申请号:US14157356
申请日:2014-01-16
申请人: Makoto Nagamine , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Kazuya Sawada , Toshihiko Nagase
发明人: Makoto Nagamine , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Kazuya Sawada , Toshihiko Nagase
CPC分类号: H01L43/08 , G11B5/3909 , H01L43/10 , H01L43/12
摘要: According to one embodiment, a magneto-resistive element includes a first ferromagnetic layer formed on a substrate, a tunnel barrier layer formed on the first ferromagnetic layer, and a second ferromagnetic layer containing B formed on the tunnel barrier layer, the second magnetic layer containing therein any of He, Ne, Ar, Kr, Xe and N2.
摘要翻译: 根据一个实施例,磁阻元件包括形成在衬底上的第一铁磁层,形成在第一铁磁层上的隧道势垒层和形成在隧道势垒层上的含有B的第二铁磁层,第二磁性层含有 其中任何He,Ne,Ar,Kr,Xe和N 2。
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公开(公告)号:US09130143B2
公开(公告)日:2015-09-08
申请号:US14201038
申请日:2014-03-07
申请人: Toshihiko Nagase , Daisuke Watanabe , Kazuya Sawada , Koji Ueda , Youngmin Eeh , Hiroaki Yoda
发明人: Toshihiko Nagase , Daisuke Watanabe , Kazuya Sawada , Koji Ueda , Youngmin Eeh , Hiroaki Yoda
CPC分类号: H01L43/02 , G11C11/161 , H01L27/222 , H01L43/08 , H01L43/12
摘要: According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, and a magnetoresistive element provided on the substrate. The magnetoresistive element includes a first magnetic layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer or the second magnetic layer includes a first region, second region, and third region whose ratios of crystalline portion are higher in order closer to the tunneling barrier.
摘要翻译: 根据一个实施例,公开了一种磁存储器。 磁存储器包括衬底和设置在衬底上的磁阻元件。 磁阻元件包括第一磁性层,第一磁性层上的隧道势垒层和隧道势垒层上的第二磁性层。 第一磁性层或第二磁性层包括第一区域,第二区域和第三区域,其结晶部分的比例更接近隧道势垒。
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公开(公告)号:US09061269B2
公开(公告)日:2015-06-23
申请号:US13993823
申请日:2012-01-23
申请人: Masayoshi Handa , Koji Ueda , Kimihiko Kondo
发明人: Masayoshi Handa , Koji Ueda , Kimihiko Kondo
CPC分类号: B01J20/3028 , A61L15/60 , B01J20/261 , C08F2/001 , C08F2/32 , C08L33/02
摘要: A method for producing a water-absorbent resin by a reversed-phase suspension polymerization method, includes step 1 of dispersing a first aqueous solution containing a partially neutralized product (A) of a water-soluble ethylenically unsaturated monomer having acid groups in the molecule in a petroleum-type hydrocarbon dispersion medium in the presence of a dispersing agent, and then polymerizing the resulting dispersion to obtain a slurry containing primary particles of a polymer, and step 2 of adding a second aqueous solution containing a partially neutralized product (B) of a water-soluble ethylenically unsaturated monomer having acid groups in the molecule to the slurry obtained in step 1, and then polymerizing the mixture to obtain a slurry in which the primary particles are agglomerated. In the method, a molar neutralization degree X of the partially neutralized product (A) and a molar neutralization degree Y of the partially neutralized product (B) are defined.
摘要翻译: 通过反相悬浮聚合法制造吸水性树脂的方法包括:将分子中含有具有酸基的水溶性烯键式不饱和单体的部分中和产物(A)的第一水溶液分散在 石油型烃分散介质,在分散剂存在下,然后使所得分散体聚合,得到含有聚合物一次颗粒的浆料;步骤2,将含有部分中和产物(B)的第二水溶液 在分子中具有酸基的水溶性烯属不饱和单体与步骤1中获得的浆料混合,然后使混合物聚合,得到一次粒子凝聚的浆料。 在该方法中,定义部分中和物(A)的摩尔中和度X和部分中和物(B)的摩尔中和度Y.
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公开(公告)号:US09018719B2
公开(公告)日:2015-04-28
申请号:US13424301
申请日:2012-03-19
申请人: Katsuya Nishiyama , Hisanori Aikawa , Tadashi Kai , Toshihiko Nagase , Koji Ueda , Hiroaki Yoda
发明人: Katsuya Nishiyama , Hisanori Aikawa , Tadashi Kai , Toshihiko Nagase , Koji Ueda , Hiroaki Yoda
CPC分类号: G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08
摘要: According to one embodiment, a magnetoresistive element includes a storage layer having a perpendicular and variable magnetization, a reference layer having a perpendicular and invariable magnetization, a shift adjustment layer having a perpendicular and invariable magnetization in a direction opposite to a magnetization of the reference layer, a first nonmagnetic layer between the storage layer and the reference layer, and a second nonmagnetic layer between the reference layer and the shift adjustment layer. A switching magnetic field of the reference layer is equal to or smaller than a switching magnetic field of the storage layer, and a magnetic relaxation constant of the reference layer is larger than a magnetic relaxation constant of the storage layer.
摘要翻译: 根据一个实施例,磁阻元件包括具有垂直和可变磁化的存储层,具有垂直和不变磁化的参考层,在与参考层的磁化相反的方向上具有垂直和不变磁化的位移调整层 存储层和参考层之间的第一非磁性层,以及参考层和位移调整层之间的第二非磁性层。 参考层的开关磁场等于或小于存储层的切换磁场,并且参考层的磁性松弛常数大于存储层的磁性松弛常数。
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