公开(公告)号：US10437236B2

公开(公告)日：2019-10-08

申请号：US15657858

申请日：2017-07-24

Applicant: LAM RESEARCH CORPORATION

Inventor： Ole Waldmann ,  Eric A. Pape ,  Carlos Leal-Verdugo ,  Keith William Gaff

IPC: G05B19/418 ,  H01L21/67

Abstract: A method of determining thermal stability of an upper surface of a substrate support assembly in a plasma processing apparatus includes: before processing of at least one substrate in the plasma processing apparatus and while powering an array of thermal control elements of the substrate support assembly to achieve a desired spatial and temporal temperature of the upper surface of the substrate support assembly, recording pre-process temperature data of the substrate support assembly; after the processing of the at least one substrate in the plasma processing apparatus and while powering the array of thermal control elements to achieve the desired spatial and temporal temperature of the upper surface of the substrate support assembly, recording post-process temperature data; comparing the post-process temperature data to the pre-process temperature data; and determining whether the post-process temperature data is within a predetermined tolerance range of the pre-process temperature data.

公开(公告)号：US10381248B2

公开(公告)日：2019-08-13

申请号：US14859951

申请日：2015-09-21

Applicant: Lam Research Corporation

Inventor： Benny Wu ,  Eric A. Pape ,  Keith William Gaff

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/324 ,  H01L21/66

Abstract: A system for controlling a temperature of a wafer processing substrate includes memory that stores first data indicative of first temperature responses of at least one first thermal control element. The first data corresponds to the first temperature responses as observed when a first control parameter of the at least one first thermal control element is maintained at a first predetermined first value. A first controller receives a setpoint temperature for the wafer processing substrate and maintains the first control parameter of the at least one first thermal control element at a second value based on the received setpoint temperature. A second controller retrieves the first data from the memory, calculates second data indicative of temperature non-uniformities associated with the wafer processing substrate based on the first data and the second value, and controls a plurality of second thermal control elements based on the calculated second data.

公开(公告)号：US10049948B2

公开(公告)日：2018-08-14

申请号：US13690745

申请日：2012-11-30

Applicant: Lam Research Corporation

Inventor： Keith William Gaff ,  Tom Anderson ,  Keith Comendant ,  Ralph Jan-Pin Lu ,  Paul Robertson ,  Eric A. Pape ,  Neil Benjamin

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/683

Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.

公开(公告)号：US09922855B2

公开(公告)日：2018-03-20

申请号：US15692002

申请日：2017-08-31

Applicant: LAM RESEARCH CORPORATION

Inventor： Tao Zhang ,  Ole Waldmann ,  Eric A. Pape

IPC: H01L21/00 ,  H01L21/683 ,  H01L21/66 ,  H01L21/67 ,  G05D23/19

CPC classification number: H01L21/6831 ,  G05D23/1931 ,  H01L21/67109 ,  H01L21/67248 ,  H01L22/20

Abstract: A method for controlling a substrate temperature in a substrate processing system includes determining a temperature difference between the substrate temperature before the substrate is loaded onto a substrate support device and a desired temperature for the substrate support device and, during a first period, controlling a thermal control element to adjust the temperature of the substrate support device to a temperature value based on the temperature difference. The temperature value is not equal to the desired temperature for the substrate support device. The method further includes loading the substrate onto the substrate support device after the first period begins and before the temperature of the substrate support device returns to the desired temperature and, during a second period that follows the first period, controlling the temperature of the substrate support device to the desired temperature for the substrate support device.

公开(公告)号：US20170338140A1

公开(公告)日：2017-11-23

申请号：US15157959

申请日：2016-05-18

Applicant: Lam Research Corporation

Inventor： Eric A. Pape

IPC: H01L21/683 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/6833 ,  C23C16/4404 ,  C23C16/4409 ,  C23C16/45544 ,  C23C16/4583 ,  H01J37/32082 ,  H01J37/32477 ,  H01J37/32513 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68757 ,  H01L21/68785

Abstract: A substrate support in a substrate processing system includes a baseplate, a ceramic layer, and a bond layer. The ceramic layer is arranged on the baseplate to support a substrate. The bond layer is arranged between the ceramic layer and the baseplate. A seal is arranged between the ceramic layer and the baseplate around an outer perimeter of the bond layer. The seal includes an inner layer formed adjacent to the bond layer and an outer layer formed adjacent to the inner layer such that the inner layer is between the outer layer and the bond layer. The inner layer comprises a first material and the outer layer comprises a second material.

公开(公告)号：US20170332480A1

公开(公告)日：2017-11-16

申请号：US15586178

申请日：2017-05-03

Applicant: LAM RESEARCH CORPORATION

Inventor： Yuma Ohkura ,  Darrell Ehrlich ,  Eric A. Pape

IPC: H05K1/02 ,  H05K1/03 ,  H05B3/26 ,  H05K1/11 ,  H05K1/09

Abstract: A substrate support for a substrate processing system includes a plurality of heating zones, a baseplate, at least one of a heating layer and a ceramic layer arranged on the baseplate, and a plurality of heating elements provided within the at least one of the heating layer and the ceramic layer. The plurality of heating elements includes a first material having a first electrical resistance. Wiring is provided through the baseplate in a first zone of the plurality of heating zones. An electrical connection is routed from the wiring in the first zone to a first heating element of the plurality of heating elements. The first heating element is arranged in a second zone of the plurality of heating zones and the electrical connection includes a second material having a second electrical resistance that is less than the first electrical resistance.

公开(公告)号：US09543171B2

公开(公告)日：2017-01-10

申请号：US14307062

申请日：2014-06-17

Applicant: Lam Research Corporation

Inventor： Ole Waldmann ,  Eric A. Pape ,  Keith William Gaff ,  Harmeet Singh

IPC: H01L21/00 ,  H01L21/67

CPC classification number: H01L21/67109 ,  H01L21/67248 ,  H01L21/67288

Abstract: A method for auto-correction of at least one malfunctioning thermal control element among an array of thermal control elements that are independently controllable and located in a temperature control plate of a substrate support assembly which supports a semiconductor substrate during processing thereof, the method including: detecting, by a control unit including a processor, that at least one thermal control element of the array of thermal control elements is malfunctioning; deactivating, by the control unit, the at least one malfunctioning thermal control element; and modifying, by the control unit, a power level of at least one functioning thermal control element in the temperature control plate to minimize impact of the malfunctioning thermal control element on the desired temperature output at the location of the at least one malfunctioning thermal control element.

Abstract translation: 一种用于自动校正热控制元件阵列中的至少一个故障热控元件的方法，所述热控制元件阵列可独立控制并位于在其处理期间支撑半导体衬底的衬底支撑组件的温度控制板中，所述方法包括： 通过包括处理器的控制单元检测所述热控元件阵列中的至少一个热控元件是故障的; 由所述控制单元使所述至少一个故障热控制元件停用; 以及通过所述控制单元修改所述温度控制板中的至少一个功能性热控制元件的功率水平，以使所述故障热控制元件对所述至少一个故障热控制元件的位置处的期望温度输出的影响最小化 。

公开(公告)号：US20150219499A1

公开(公告)日：2015-08-06

申请号：US14173149

申请日：2014-02-05

Applicant: Lam Research Corporation

Inventor： Ole Waldmann ,  Eric A. Pape ,  Robert Griffith O'Neill ,  Francisco Martinez

IPC: G01J5/02 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065 ,  G01N35/00

CPC classification number: G01J5/02 ,  G01J5/0007 ,  G01J5/025 ,  G01J5/10 ,  G01J2005/0048 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831

Abstract: A method for calculating power input to at least one thermal control element of an electrostatic chuck includes: setting the at least one thermal control element to a first predetermined power level; measuring a first temperature of the at least one thermal control element when the at least one thermal control element is powered at the first predetermined power level; setting the at least one thermal control element to a second predetermined power level; measuring a second temperature of the at least one thermal control element when the at least one thermal control element is powered at the second predetermined power level; calculating a difference between the first temperature and the second temperature; calculating a system response of the at least one thermal control element based on the difference; inverting the system response; and calibrating the at least one thermal control element based on the inverted system response.

Abstract translation: 一种用于计算静电卡盘的至少一个热控元件的功率输入的方法，包括：将所述至少一个热控制元件设置为第一预定功率水平; 当所述至少一个热控元件以所述第一预定功率水平供电时，测量所述至少一个热控元件的第一温度; 将所述至少一个热控制元件设置到第二预定功率水平; 当所述至少一个热控元件以所述第二预定功率电平供电时，测量所述至少一个热控元件的第二温度; 计算第一温度和第二温度之间的差; 基于所述差异来计算所述至少一个热控制元件的系统响应; 反转系统响应; 以及基于所述反向系统响应来校准所述至少一个热控制元件。

公开(公告)号：US20150168962A1

公开(公告)日：2015-06-18

申请号：US14109020

申请日：2013-12-17

Applicant: Lam Research Corporation

Inventor： Ole Waldmann ,  Eric A. Pape ,  Carlos Leal-Verdugo ,  Keith William Gaff

IPC: G05D23/19 ,  G05B19/418

CPC classification number: G05B19/418 ,  H01L21/67103 ,  H01L21/67248

Abstract: A method of determining thermal stability of an upper surface of a substrate support assembly comprises recording time resolved pre-process temperature data of the substrate before performing a plasma processing process while powering an array of thermal control elements to achieve a desired spatial and temporal temperature of the upper surface. A substrate is processed while powering the array of thermal control elements to achieve a desired spatial and temporal temperature of the upper surface of the assembly, and time resolved post-process temperature data of the assembly is recorded after processing the substrate. The post-process temperature data is recorded while powering the thermal control elements to achieve a desired spatial and temporal temperature of the upper surface. The post-process temperature data is compared to the pre-process temperature data to determine whether the data is within a desired tolerance range.

Abstract translation: 确定衬底支撑组件的上表面的热稳定性的方法包括在执行等离子体处理过程之前记录衬底的时间分辨的预处理温度数据，同时为热控制元件的阵列供电以实现期望的空间和时间温度 上表面。 处理衬底，同时为热控制元件阵列供电，以实现组件的上表面的期望的空间和时间温度，并且在处理衬底之后记录组件的时间分辨的后处理温度数据。 记录后处理温度数据，同时为热控制元件供电以实现上表面的期望的空间和时间温度。 将后处理温度数据与预处理温度数据进行比较，以确定数据是否在期望的公差范围内。

公开(公告)号：US12249490B2

公开(公告)日：2025-03-11

申请号：US17770147

申请日：2020-10-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin Xu ,  Douglas Detert ,  John Daugherty ,  Pankaj Hazarika ,  Satish Srinivasan ,  Nash W. Anderson ,  John Michael Kerns ,  Robin Koshy ,  David Joseph Wetzel ,  Lei Liu ,  Eric A. Pape

IPC: H01J37/32

Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.