公开(公告)号：US20150007879A1

公开(公告)日：2015-01-08

申请号：US14323986

申请日：2014-07-03

Applicant: LG ELECTRONICS INC.

Inventor： Hyungjin Kwon ,  Hyunjung Park ,  Junghoon Choi ,  Changseo Park

IPC: H01L31/0224 ,  H01L31/028 ,  H01L31/18

Abstract: Discussed is a solar cell including a semiconductor substrate, a tunneling layer formed on one surface of the semiconductor substrate, a first conductive semiconductor layer formed on a surface of the tunneling layer and a second conductive semiconductor layer formed on the surface the tunneling layer. A separation portion separates the first and second conductive semiconductor layers from each other, and is formed on the surface of the tunneling layer at a location corresponding to at least a portion of a boundary between the first and second conductive semiconductor layers.

Abstract translation: 讨论了包括半导体衬底，形成在半导体衬底的一个表面上的隧道层的太阳能电池，形成在隧道层的表面上的第一导电半导体层和形成在隧道层的表面上的第二导电半导体层。 分离部分将第一和第二导电半导体层彼此分离，并且在与第一和第二导电半导体层之间的边界的至少一部分相对应的位置处形成在隧道层的表面上。

公开(公告)号：US12243854B2

公开(公告)日：2025-03-04

申请号：US17736812

申请日：2022-05-04

Applicant: LG ELECTRONICS INC.

Inventor： Myoungsoo Kim ,  Changseo Park ,  Gunho Kim ,  Minwoo Lee ,  Jungsub Kim

IPC: H01L25/075 ,  H01L33/38

Abstract: An overlapping assembly substrate structure for semiconductor light emitting devices, includes a first assembly substrate structure and a second assembly substrate structure disposed spaced apart from each other. The first assembly substrate structure can include a first electrode and a second electrode spaced apart by a first distance and a first partition wall having a circular first assembly hole to accommodate a semiconductor light emitting device having a circular shape. Further, the second assembly substrate structure can include a third electrode and a fourth electrode spaced apart by a second distance greater than the first distance and a second partition wall having an elliptical second assembly hole to accommodate a semiconductor light emitting device having an elliptical shape.

公开(公告)号：US11380657B2

公开(公告)日：2022-07-05

申请号：US16966729

申请日：2018-02-01

Applicant: LG ELECTRONICS INC.

Inventor： Changseo Park ,  Bongchu Shim

IPC: H01L29/18 ,  H01L33/00 ,  H01L25/075 ,  H01L23/00 ,  H01L33/62

Abstract: Discussed is a display device comprising a substrate; a plurality of cells provided with a partition wall protruding on the substrate, and sequentially arranged along one direction; a plurality of semiconductor light-emitting elements respectively accommodated in the plurality of cells; and a first electrode provided with a plurality of electrode lines arranged on a bottom of the plurality of cells, and electrically connected to the plurality of semiconductor light-emitting elements, wherein the bottom of the plurality of cells comprise a first region covered by the plurality of electrode lines, and a second region formed between the plurality of electrode lines.

公开(公告)号：US11158610B2

公开(公告)日：2021-10-26

申请号：US16482971

申请日：2017-04-25

Applicant: LG ELECTRONICS INC.

Inventor： Kiseong Jeon ,  Jinhong Park ,  Changseo Park ,  Hwankuk Yuh

IPC: H01L33/38 ,  H01L27/32 ,  H01L51/50 ,  H01L25/075 ,  H01L21/66 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62

Abstract: The present invention relates to a display device and, more particularly, to a display device using a semiconductor light emitting element. The display device according to the present invention comprises: a substrate including a plurality of metal pads; and a green semiconductor light emitting element and a blue semiconductor light emitting element, which are electrically connected to the metal pads through self-assembly, wherein the green semiconductor light emitting element and the blue semiconductor light emitting element include identification parts having different shapes so as to be distinguishable from each other when connected to the substrate.

公开(公告)号：US11056598B2

公开(公告)日：2021-07-06

申请号：US16388491

申请日：2019-04-18

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin Ha ,  Youngho Choe ,  Changseo Park

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/0236

Abstract: A bifacial solar cell includes a substrate formed of a silicon wafer having an n-type conductivity; an emitter region positioned on a front surface of the substrate and having a p-type conductivity; a front negative fixed charge layer on the emitter region, and a front positive fixed charge layer on the front negative fixed charge; a plurality of first front electrodes extending in a first direction and connected to the emitter region through the front negative fixed charge layer and the front positive fixed charge layer; a plurality of second front electrodes extending in a second direction crossing the first direction and electrically and physically connected to the plurality of first front electrodes; a back aluminum oxide layer and a back silicon nitride layer on a back surface of the substrate; a plurality of back surface field regions extending in the first direction and locally positioned on the back surface of the substrate; a plurality of first back electrodes extending in the first direction and directly positioned on the plurality of back surface field regions through the back aluminum oxide layer and the back silicon nitride layer; and a plurality of second back electrodes extending in the second direction and electrically and physically connected to the plurality of first back electrodes, wherein the front negative fixed charge layer and the back aluminum oxide layer have the same thickness.

公开(公告)号：US10910502B2

公开(公告)日：2021-02-02

申请号：US16242561

申请日：2019-01-08

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Junghoon Choi ,  Changseo Park ,  Hyungjin Kwon

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0745 ,  H01L31/0216

Abstract: A method for manufacturing a solar cell, the method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer includes depositing a semiconductor material; forming a capping layer on the semiconductor layer; and forming an electrode connected to the semiconductor layer, wherein the tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure, wherein a pressure of the forming of the semiconductor layer is smaller than the pressure of the forming of the tunneling layer, wherein the forming of the semiconductor layer further comprises doping the semiconductor layer with dopants, and wherein the capping layer is formed between the forming of the semiconductor layer and the forming of the electrode.

公开(公告)号：US10825702B2

公开(公告)日：2020-11-03

申请号：US16388394

申请日：2019-04-18

Applicant: LG ELECTRONICS INC.

Inventor： Bongchu Shim ,  Dohee Kim ,  Changseo Park ,  Hyunwoo Cho

IPC: H01L21/67 ,  H01L21/44 ,  H01L25/075 ,  H01L33/62 ,  B65G47/92 ,  B65G47/14 ,  B65G47/49 ,  H01L29/82 ,  H01L33/00

Abstract: The present invention relates to a device and method for self-assembling semiconductor light-emitting diodes. Particularly, a method for manufacturing a display device according to the present invention includes: feeding a substrate to an assembly site and putting semiconductor light-emitting diodes having a magnetic material into a fluid chamber; applying a magnetic force to the semiconductor light-emitting diodes so that the semiconductor light-emitting diodes move in one direction within the fluid chamber; and guiding the semiconductor light-emitting diodes to preset positions on the substrate by applying an electric field, so that the semiconductor light-emitting diodes are mounted at the preset positions while in the process of being moved.

公开(公告)号：US10607515B2

公开(公告)日：2020-03-31

申请号：US16415770

申请日：2019-05-17

Applicant: LG ELECTRONICS INC.

Inventor： Changseo Park ,  Seongmin Moon ,  Bongchu Shim ,  Kiseong Jeon ,  Hyunwoo Cho

IPC: G09F9/33 ,  H01L27/15 ,  H01L33/62 ,  H01L33/44

Abstract: The present disclosure relates to a display device using semiconductor light emitting devices and a fabrication method thereof, and the display device according to the present disclosure can include a plurality of semiconductor light emitting devices, a first wiring electrode and a second wiring electrode respectively extended from the semiconductor light emitting devices to supply an electric signal to the semiconductor light emitting devices, a plurality of pair electrodes disposed on the substrate, and provided with a first electrode and a second electrode configured to generate an electric field when an electric current is supplied, and a dielectric layer formed to cover the pair electrodes, wherein the first wiring electrode and the second wiring electrode are formed on an opposite side to the plurality of the pair electrodes with respect to the semiconductor light emitting devices.

公开(公告)号：US20160155885A1

公开(公告)日：2016-06-02

申请号：US15004116

申请日：2016-01-22

Applicant: LG ELECTRONICS INC.

Inventor： Goohwan Shim ,  Changseo Park ,  Philwon Yoon ,  Yoonsil Jin ,  Jinsung Kim ,  Youngho Choe ,  Jaewon Chang

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  Y02E10/547

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell may include a substrate, an emitter layer positioned at a first surface of the substrate, a first anti-reflection layer that is positioned on a surface of the emitter layer and may include a plurality of first contact lines exposing a portion of the emitter layer, a first electrode that is electrically connected to the emitter layer exposed through the plurality of first contact lines and may include a plating layer directly contacting the emitter layer, and a second electrode positioned on a second surface of the substrate.

Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池可以包括衬底，位于衬底的第一表面处的发射极层，位于发射极层的表面上的第一抗反射层，并且可以包括多个第一接触线， 发射极层，电连接到通过多个第一接触线暴露的发射极层的第一电极，并且可以包括直接接触发射极层的镀层和位于基板的第二表面上的第二电极。

公开(公告)号：US09356165B2

公开(公告)日：2016-05-31

申请号：US14729857

申请日：2015-06-03

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil Jin ,  Goohwan Shim ,  Youngho Choe ,  Changseo Park

IPC: H01L21/00 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/02366 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.