公开(公告)号：US20180251893A1

公开(公告)日：2018-09-06

申请号：US15449333

申请日：2017-03-03

Applicant: Lam Research Corporation

Inventor： Geoffrey Hohn ,  Huatan Qiu ,  Rachel Batzer ,  Guangbi Yuan ,  Zhe Gui

IPC: C23C16/458 ,  H01L21/687 ,  C23C16/505

CPC classification number: C23C16/4585 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/505 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785

Abstract: An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.

公开(公告)号：US20180233326A1

公开(公告)日：2018-08-16

申请号：US15432314

申请日：2017-02-14

Applicant: Lam Research Corporation

Inventor： Taide Tan ,  Huatan Qiu ,  Ryan Senff

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/507 ,  H01J37/3211 ,  H01J37/32513 ,  H01J37/32724 ,  H01J2237/3321

Abstract: A system for processing a substrate includes a chamber having a chamber wall that defines a lower chamber portion and an upper chamber wall that defines an upper chamber portion. A showerhead is disposed in the upper chamber portion. A pedestal with a support for the substrate is disposed in the lower chamber portion and oriented below the showerhead, such that a processing region is defined between the support of the pedestal and the showerhead. A spacer is disposed between the showerhead and the lower chamber wall of the lower chamber portion. The spacer is defined by an annular body that includes a vertical component. The annular body also includes a side extension that is disposed outside of the processing region and projects radially away from the vertical component. The annular body includes a groove that is formed in the side extension so as to surround the vertical component of the annular body. A heating element is embedded in the groove of the side extension.

公开(公告)号：US09828672B2

公开(公告)日：2017-11-28

申请号：US14712167

申请日：2015-05-14

Applicant: Lam Research Corporation

Inventor： Bhadri N. Varadarajan ,  Bo Gong ,  Rachel E. Batzer ,  Huatan Qiu ,  Bart J. van Schravendijk ,  Geoffrey Hohn

IPC: C23C16/40 ,  B05D3/14 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  C23C16/44 ,  C23C16/452 ,  C23C16/458

CPC classification number: C23C16/45525 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/32486

Abstract: Methods and apparatus for remote plasma processing are provided. In various embodiments, a reaction chamber is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs within the reaction chamber when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates.

公开(公告)号：US20160281230A1

公开(公告)日：2016-09-29

申请号：US14712167

申请日：2015-05-14

Applicant: Lam Research Corporation

Inventor： Bhadri N. Varadarajan ,  Bo Gong ,  Rachel E. Batzer ,  Huatan Qiu ,  Bart J. van Schravendijk ,  Geoffrey Hohn

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/50 ,  H01J37/32 ,  C23C16/52 ,  C23C16/458

CPC classification number: C23C16/45525 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/32486

Abstract: Certain embodiments herein relate to methods of conditioning a reaction chamber that is used for remote plasma processing. Other embodiments herein relate to apparatus used for remote plasma processing. In various embodiments, a reaction chamber is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs within the reaction chamber when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates.

Abstract translation: 本文中的某些实施例涉及用于远程等离子体处理的调节反应室的方法。 本文的其它实施例涉及用于远程等离子体处理的装置。 在各种实施方案中，通过在内室表面上形成低复合材料涂层来调节反应室。 当反应室用于处理基材时，低复合材料有助于最小化在反应室内发生的自由基重组的程度。 在衬底处理期间，低复合材料可能被相对较高的复合材料（例如，作为衬底加工的副产物）覆盖，这导致可用于随时间处理衬底的自由基量的减少。 低复合材料涂层可以通过暴露于氧化等离子体来进行再生，该氧化等离子体用于改造低复合材料涂层。 修复过程可能会在衬底上发生附加处理而周期性地发生。