公开(公告)号：US20090061108A1

公开(公告)日：2009-03-05

申请号：US12027980

申请日：2008-02-07

申请人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao ,  Jeremy Cheng

发明人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao ,  Jeremy Cheng

IPC分类号： B05C13/00 ,  H05H1/24

CPC分类号： H01L21/32051 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00659 ,  B01J2219/00745 ,  B01J2219/00756 ,  C23C14/042 ,  C23C14/50 ,  C23C14/548 ,  C23C16/45544 ,  H01L21/67005 ,  H01L21/6719

摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

摘要翻译： 提供组合处理室。 组合处理室被配置为隔离可旋转的衬底支撑件的径向部分，该可旋转衬底支撑件又被配置为支撑衬底。 在一个实施例中，腔室包括多个聚集过程头。 在一个实施例中，具有设置在基板支撑件和工艺头之间的基板的插入件限定了用于沉积工艺的约束区域。 基板具有能够将沉积材料接近基板的开口。 通过基板的旋转和开口的移动，基板的多个区域是可访问的，以在单个基板上执行组合处理。

公开(公告)号：US20050126484A1

公开(公告)日：2005-06-16

申请号：US11013124

申请日：2004-12-15

申请人： Maosheng Zhao ,  Lun Tsuei ,  Juan Rocha-Alvarez ,  Tom Cho

发明人： Maosheng Zhao ,  Lun Tsuei ,  Juan Rocha-Alvarez ,  Tom Cho

IPC分类号： C23C16/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  H01L21/00

CPC分类号： C23C16/45565 ,  C23C16/5096 ,  H01J37/3244

摘要： Embodiments in accordance with the present invention relate to apparatuses and methods distributing processing gases over a workpiece surface. In accordance with one embodiment of the present invention, process gases are flowed to a surface of a semiconductor wafer through a substantially circular gas distribution showerhead defining a plurality of holes. A first set of holes located at the center of the faceplate, are arranged in a non-concentric manner not exhibiting radial symmetry. This asymmetric arrangement achieves maximum density of holes and gases distributed therefrom. To compensate for nonuniform exposure of the wafer edges to gases flowed from the first hole set, the faceplate periphery defines a second set of holes arranged concentrically and exhibiting radial symmetry. Processing substrates with gases flowed through the first and second sets of holes results in formation of films exhibiting enhanced uniformity across center-to-edge regions.

摘要翻译： 根据本发明的实施例涉及在工件表面上分配处理气体的装置和方法。 根据本发明的一个实施例，工艺气体通过限定多个孔的基本圆形的气体分配喷头流向半导体晶片的表面。 位于面板中心的第一组孔布置成不呈径向对称的非同心方式。 这种不对称布置实现了从其分布的孔和气体的最大密度。 为了补偿晶片边缘对从第一孔组流出的气体的不均匀曝光，面板周边限定了同心布置且呈径向对称的第二组孔。 处理具有流经第一和第二组孔的气体的衬底导致形成在中心到边缘区域上具有增强的均匀性的膜。

公开(公告)号：US08771483B2

公开(公告)日：2014-07-08

申请号：US12027980

申请日：2008-02-07

申请人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao ,  Jeremy Cheng

发明人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao ,  Jeremy Cheng

IPC分类号： C23C14/00 ,  C23C16/50 ,  C25B11/00 ,  H01L21/306

CPC分类号： H01L21/32051 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00659 ,  B01J2219/00745 ,  B01J2219/00756 ,  C23C14/042 ,  C23C14/50 ,  C23C14/548 ,  C23C16/45544 ,  H01L21/67005 ,  H01L21/6719

摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

摘要翻译： 提供组合处理室。 组合处理室被配置为隔离可旋转的衬底支撑件的径向部分，该可旋转衬底支撑件又被配置为支撑衬底。 在一个实施例中，腔室包括多个聚集过程头。 在一个实施例中，具有设置在基板支撑件和工艺头之间的基板的插入件限定了用于沉积工艺的约束区域。 基板具有能够将沉积材料接近基板的开口。 通过基板的旋转和开口的移动，基板的多个区域是可访问的，以在单个基板上执行组合处理。

公开(公告)号：US08770143B2

公开(公告)日：2014-07-08

申请号：US13106059

申请日：2011-05-12

申请人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao

发明人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao

IPC分类号： C23C16/00 ,  C23C16/50 ,  B05B1/28 ,  B05D1/10 ,  B05D1/00 ,  B05D3/00 ,  H05H1/24 ,  C23F1/00 ,  H01L21/306 ,  C25B11/00 ,  B05B15/04 ,  B05B15/12

CPC分类号： C23C16/45565 ,  B05B14/30 ,  B05B16/80 ,  B05D1/10 ,  B05D1/62 ,  C23C16/4412 ,  C23C16/45589 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/4587 ,  C23C16/50 ,  Y10S438/942

摘要： The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.

摘要翻译： 本发明的各种实施例提供了基板和工艺头在最小空间中访问整个晶片的相对运动，以对基板的各个区域进行组合处理。 这些头使得所描述的室内的现场隔离处理和使用其的方法被描述。

公开(公告)号：US08932995B2

公开(公告)日：2015-01-13

申请号：US13333007

申请日：2011-12-21

申请人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao ,  Jeremy Cheng

发明人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao ,  Jeremy Cheng

IPC分类号： H01L21/265 ,  H01L21/28 ,  C23C16/455 ,  B01J19/00 ,  C23C14/04 ,  C23C14/50 ,  C23C14/54 ,  H01L21/67

CPC分类号： H01L21/32051 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00659 ,  B01J2219/00745 ,  B01J2219/00756 ,  C23C14/042 ,  C23C14/50 ,  C23C14/548 ,  C23C16/45544 ,  H01L21/67005 ,  H01L21/6719

摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

摘要翻译： 提供组合处理室。 组合处理室被配置为隔离可旋转的衬底支撑件的径向部分，该可旋转衬底支撑件又被配置为支撑衬底。 在一个实施例中，腔室包括多个聚集过程头。 在一个实施例中，具有设置在基板支撑件和工艺头之间的基板的插入件限定了用于沉积工艺的约束区域。 基板具有能够将沉积材料接近基板的开口。 通过基板的旋转和开口的移动，基板的多个区域是可访问的，以在单个基板上执行组合处理。

公开(公告)号：US08758581B2

公开(公告)日：2014-06-24

申请号：US12205544

申请日：2008-09-05

申请人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao ,  Jeremy Cheng

发明人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao ,  Jeremy Cheng

IPC分类号： C23C14/00 ,  C25B11/00 ,  C23C16/50 ,  H01L21/306

CPC分类号： H01L21/32051 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00659 ,  B01J2219/00745 ,  B01J2219/00756 ,  C23C14/042 ,  C23C14/50 ,  C23C14/548 ,  C23C16/45544 ,  H01L21/67005 ,  H01L21/6719

摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

公开(公告)号：US20120149180A1

公开(公告)日：2012-06-14

申请号：US13333007

申请日：2011-12-21

申请人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao ,  Jeremy Cheng

发明人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao ,  Jeremy Cheng

IPC分类号： H01L21/265 ,  H01L21/28

CPC分类号： H01L21/32051 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00659 ,  B01J2219/00745 ,  B01J2219/00756 ,  C23C14/042 ,  C23C14/50 ,  C23C14/548 ,  C23C16/45544 ,  H01L21/67005 ,  H01L21/6719

摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

摘要翻译： 提供组合处理室。 组合处理室被配置为隔离可旋转的衬底支撑件的径向部分，该可旋转衬底支撑件又被配置为支撑衬底。 在一个实施例中，腔室包括多个聚集过程头。 在一个实施例中，具有设置在基板支撑件和工艺头之间的基板的插入件限定了用于沉积工艺的约束区域。 基板具有能够将沉积材料接近基板的开口。 通过基板的旋转和开口的移动，基板的多个区域是可访问的，以在单个基板上执行组合处理。

公开(公告)号：US20110209663A1

公开(公告)日：2011-09-01

申请号：US13106059

申请日：2011-05-12

申请人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao

发明人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao

IPC分类号： C23C16/455 ,  C23C16/448

CPC分类号： C23C16/45565 ,  B05B14/30 ,  B05B16/80 ,  B05D1/10 ,  B05D1/62 ,  C23C16/4412 ,  C23C16/45589 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/4587 ,  C23C16/50 ,  Y10S438/942

摘要： The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.

摘要翻译： 本发明的各种实施例提供了基板和工艺头在最小空间中访问整个晶片的相对运动，以在基板的各个区域上进行组合处理。 这些头使得所描述的室内的现场隔离处理和使用其的方法被描述。

公开(公告)号：US20090069924A1

公开(公告)日：2009-03-12

申请号：US12205544

申请日：2008-09-05

申请人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao ,  Jeremy Cheng

发明人： Rick Endo ,  Kurt Weiner ,  Indranil De ,  James Tsung ,  Maosheng Zhao ,  Jeremy Cheng

IPC分类号： G06F17/00

CPC分类号： H01L21/32051 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00659 ,  B01J2219/00745 ,  B01J2219/00756 ,  C23C14/042 ,  C23C14/50 ,  C23C14/548 ,  C23C16/45544 ,  H01L21/67005 ,  H01L21/6719

摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.